IR180SG12HPBF [INFINEON]

Silicon Controlled Rectifier, 1200V V(RRM), 1 Element, 4 INCH, WAFER;
IR180SG12HPBF
型号: IR180SG12HPBF
厂家: Infineon    Infineon
描述:

Silicon Controlled Rectifier, 1200V V(RRM), 1 Element, 4 INCH, WAFER

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Bulletin I0203J 06/98  
IR180SG..HCB SERIES  
PHASE CONTROL THYRISTORS  
Junction Size:  
Wafer Size:  
Square 180 mils  
4"  
VRRM Class:  
600 and 1200 V  
Passivation Process:  
Glassivated MESA  
Reference IR Packaged Part: n. a.  
Major Ratings and Characteristics  
Parameters  
Units  
Test Conditions  
VTM  
Maximum On-state Voltage  
1.3 V  
TJ = 25°C, IT = 25 A  
VRRM ReverseBreakdownVoltage  
600and1200V TJ = 25°C, IRRM = 300 µA  
(1)  
IGT  
VGT  
IH  
Max. Required DC Gate Current to Trigger  
Max. Required DC Gate Voltage to Trigger  
HoldingCurrentRange  
45 mA  
1.9 V  
TJ =25°C, anodesupply=6V, resistiveload  
TJ =25°C, anodesupply=6V, resistiveload  
Anode supply = 6 V, resistive load  
5 to 150 mA  
IL  
Maximum Latching Current  
400 mA  
Anode supply = 6 V, resistive load  
(1)Nitrogen flow on die edge.  
Mechanical Characteristics  
Nominal Back Metal Composition, Thickness  
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)  
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)  
180 x 180 mils (see drawing)  
Nominal Front Metal Composition, Thickness  
ChipDimensions  
Wafer Diameter  
WaferThickness  
100 mm, with std. < 100 > flat  
350 µm ± 10 µm  
Maximum Width of Sawing Line  
Reject Ink Dot Size  
130µm  
0.25mmdiameterminimum  
Seedrawing  
InkDotLocation  
RecommendedStorageEnvironment  
Storageinoriginalcontainer, indessicated  
nitrogen,withnocontamination  
www.irf.com  
1
IR180SG..HCB Series  
Bulletin I0203J 06/98  
Ordering Information Table  
Device Code  
IR 180  
S
G
12  
H
CB  
1
2
3
4
5
6
7
1
2
3
4
5
6
7
-
-
-
-
-
-
-
International Rectifier Device  
Chip Dimension in Mils  
Type of Device: S = Solderable SCR  
Passivation Process: G = Glassivated MESA  
Voltage code: Code x 100 = VRRM  
AvailableClass  
06 = 600 V  
12 =1200 V  
Metallization: H = Silver (Anode) - Silver (Cathode)  
CB = Probed Uncut Die (wafer in box)  
None = Probed Die in chip carrier  
Outline Table  
All dimensions are in millimeters  
www.irf.com  
2
IR180SG..HCB Series  
Bulletin I0203J 06/98  
Wafer Layout  
TOP VIEW  
N° 293 Basic Cells  
All dimensions are in millimeters  
www.irf.com  
3

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