IPD16CN10NG [INFINEON]
OptiMOS㈢2 Power-Transistor; OptiMOS®2功率三极管
| 型号： | IPD16CN10NG |
| 厂家： | 
Infineon |
| 描述： | OptiMOS㈢2 Power-Transistor |
| 文件： | 总12页 (文件大小：624K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB16CN10N G IPD16CN10N G
IPI16CN10N G IPP16CN10N G
OptiMOS®2 Power-Transistor
Product Summary
Features
V DS
100
16
V
• N-channel, normal level
R DS(on),max (TO252)
I D
mΩ
A
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
53
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
IPB16CN10N G
IPD16CN10N G
IPI16CN10N G
IPP16CN10N G
Type
PG-TO263-3
16CN10N
PG-TO252-3
16CN10N
PG-TO262-3
16CN10N
PG-TO220-3
16CN10N
Package
Marking
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
T C=25 °C
T C=100 °C
Continuous drain current
53
38
A
Pulsed drain current2)
I D,pulse
E AS
T C=25 °C
212
107
I D=53 A, R GS=25 Ω
Avalanche energy, single pulse
mJ
I D=53 A, V DS=80 V,
di /dt =100 A/µs,
Reverse diode dv /dt
dv /dt
6
kV/µs
T
j,max=175 °C
Gate source voltage3)
V GS
±20
V
P tot
T C=25 °C
Power dissipation
100
W
°C
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 175
55/175/56
1)J-STD20 and JESD22
2) see figure 3
3)
T
=150°C and duty cycle D=0.01 for Vgs<-5V
jmax
Rev. 1.01
page 1
2006-06-02
IPB16CN10N G IPD16CN10N G
IPI16CN10N G IPP16CN10N G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
-
-
-
-
-
-
-
-
-
-
1.5
62
40
75
50
K/W
R thJA
minimal footprint
Thermal resistance, junction -
ambient (TO220, TO262, TO263)
6 cm2 cooling area4)
minimal footprint
Thermal resistance, junction -
ambient (TO252)
6 cm2 cooling area4)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS
V GS(th)
V
V
GS=0 V, I D=1 mA
DS=V GS, I D=61 µA
Drain-source breakdown voltage
Gate threshold voltage
100
2
-
-
V
3
4
V
DS=80 V, V GS=0 V,
I DSS
Zero gate voltage drain current
-
0.1
1
µA
T j=25 °C
V
DS=80 V, V GS=0 V,
-
-
-
10
1
100
T j=125 °C
I GSS
V
V
GS=20 V, V DS=0 V
GS=10 V, I D=53 A,
Gate-source leakage current
100 nA
R DS(on)
Drain-source on-state resistance
12.2
16
mΩ
(TO252)
V
GS=10 V, I D=53 A,
-
12.4
16.2
(TO262)
V
GS=10 V, I D=53 A,
-
-
12.7
1.2
65
16.5
(TO220, TO263)
R G
g fs
Gate resistance
-
-
Ω
|V DS|>2|I D|R DS(on)max
I D=53 A
,
Transconductance
33
S
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.01
page 2
2006-06-02
IPB16CN10N G IPD16CN10N G
IPI16CN10N G IPP16CN10N G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
2420
364
23
3220 pF
484
V
GS=0 V, V DS=50 V,
C oss
C rss
t d(on)
t r
f =1 MHz
35
15
22
21
41
11
ns
14
V
DD=50 V, V GS=10 V,
I D=26.5 A, R G=1.6 Ω
t d(off)
t f
Turn-off delay time
Fall time
27
7
Gate Charge Characteristics5)
Gate to source charge
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
13
9
18
13
21
48
-
nC
Q gd
V
V
DD=50 V, I D=53 A,
Q sw
Q g
15
36
5.6
38
GS=0 to 10 V
Gate charge total
V plateau
Q oss
Gate plateau voltage
Output charge
V
V
DD=50 V, V GS=0 V
51
nC
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
53
A
T C=25 °C
I S,pulse
212
V
GS=0 V, I F=53 A,
V SD
Diode forward voltage
-
1
1.2
-
V
T j=25 °C
t rr
Reverse recovery time
-
-
110
215
ns
V R=50 V, I F=I S,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
nC
5) See figure 16 for gate charge parameter definition
Rev. 1.01
page 3
2006-06-02
IPB16CN10N G IPD16CN10N G
IPI16CN10N G IPP16CN10N G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
120
100
80
60
40
20
0
60
50
40
30
20
10
0
0
50
100
150
200
0
50
100
150
200
T
C [°C]
T
C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
thJC=f(t p)
Z
parameter: D =t p/T
103
101
1 µs
102
10 µs
100 µs
1 ms
10 ms
100
0.5
DC
0.2
101
100
0.1
0.05
10-1
0.02
0.01
single pulse
10-1
10-2
10-1
100
101
102
103
10-5
10-4
10-3
10-2
10-1
100
V
DS [V]
t p [s]
Rev. 1.01
page 4
2006-06-02
IPB16CN10N G IPD16CN10N G
IPI16CN10N G IPP16CN10N G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
DS(on)=f(I D); T j=25 °C
R
parameter: V GS
parameter: V GS
250
50
10 V
8 V
45
4.5 V
5 V
200
150
100
50
40
35
30
25
20
15
10
5
7 V
5.5 V
6.5 V
6 V
6 V
10 V
5.5 V
5 V
4.5 V
0
0
0
0
1
2
3
4
5
20
40
60
V
DS [V]
I D [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
200
150
100
50
100
80
60
40
20
0
175 °C
25 °C
0
0
2
4
6
8
0
20
40
60
I
D [A]
V
GS [V]
Rev. 1.01
page 5
2006-06-02
IPB16CN10N G IPD16CN10N G
IPI16CN10N G IPP16CN10N G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
GS(th)=f(T j); V GS=V DS
R
DS(on)=f(T j); I D=53 A; V GS=10 V
V
parameter: I D
40
35
30
25
4
3.5
3
610 µA
61 µA
2.5
2
98 %
20
15
10
5
typ
1.5
1
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
104
103
Ciss
25 °C
103
102
175 °C
175 °C, 98%
Coss
25 °C, 98%
102
101
Crss
101
100
0
0
20
40
60
80
0.5
1
1.5
2
V
DS [V]
V SD [V]
Rev. 1.01
page 6
2006-06-02
IPB16CN10N G IPD16CN10N G
IPI16CN10N G IPP16CN10N G
13 Avalanche characteristics
AS=f(t AV); R GS=25 Ω
14 Typ. gate charge
GS=f(Q gate); I D=53 A pulsed
V
I
parameter: T j(start)
parameter: V DD
100
12
50 V
10
8
20 V
25 °C
80 V
100 °C
150 °C
10
6
4
2
1
1
0
0
10
100
1000
10
20
30
40
Q
gate [nC]
t
AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)=f(T j); I D=1 mA
115
V GS
Q g
110
105
100
95
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
90
-60
-20
20
60
100
140
180
T j [°C]
Rev. 1.01
page 7
2006-06-02
IPB16CN10N G IPD16CN10N G
IPI16CN10N G IPP16CN10N G
PG-TO220-3: Outline
Rev. 1.01
page 8
2006-06-02
IPB16CN10N G IPD16CN10N G
IPI16CN10N G IPP16CN10N G
Rev. 1.01
page 9
2006-06-02
IPB16CN10N G IPD16CN10N G
IPI16CN10N G IPP16CN10N G
PG-TO-263 (D²-Pak)
Rev. 1.01
page 10
2006-06-02
IPB16CN10N G IPD16CN10N G
IPI16CN10N G IPP16CN10N G
PG-TO252-3: Outline
Rev. 1.01
page 11
2006-06-02
IPB16CN10N G IPD16CN10N G
IPI16CN10N G IPP16CN10N G
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
Rev. 1.01
page 12
2006-06-02
相关型号：
IPD170N04NGBTMA1
Power Field-Effect Transistor, 30A I(D), 40V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN
INFINEON
IPD180N10N3 G
英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比，该系列在 R Ds（on）和 FOM（品质因数）方面均降低了30％。
INFINEON
IPD180N10N3GATMA1
Power Field-Effect Transistor, 43A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN
INFINEON
IPD180N10N3GBTMA1
Power Field-Effect Transistor, 43A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN
INFINEON
IPD18DP10LM
DPAK 封装型 100 V OptiMOS™ P 沟道 MOSFET 是面向电池管理、负载开关和反极性保护应用的全新技术。P 沟道器件的主要优势在于降低中低功率应用的设计复杂度。此类产品可轻松连接 MCU，开关速度快且雪崩能力强，尤其适合质量要求高的应用。器件支持逻辑电平，具备较宽的 RDS(on) 范围和低 Qg，低负载下效率较高。
INFINEON
IPD19DP10NM
DPAK 封装型 100 V OptiMOS™ P 沟道 MOSFET 是面向电池管理、负载开关和反极性保护应用的全新技术。P 沟道器件的主要优势在于降低中低功率应用的设计复杂度。此类产品可轻松连接 MCU，开关速度快且雪崩能力强，尤其适合质量要求高的应用。器件支持正常电平，具备较宽的 RDS(on) 范围和低 Qg，低负载下效率较高。
INFINEON
IPD200N15N3G
OptiMOS?3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
INFINEON
IPD200N15N3GBTMA1
Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC, DPAK-3
INFINEON
©2020 ICPDF网 联系我们和版权申明