IPD180N10N3GATMA1 [INFINEON]
Power Field-Effect Transistor, 43A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN;
| 型号： | IPD180N10N3GATMA1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 43A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN 开关 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：491K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPD180N10N3 G
OptiMOSTM3 Power-Transistor
Product Summary
Features
VDS
100
18
V
• N-channel, normal level
RDS(on),max TO-263
ID
mW
A
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
43
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPD180N10N3 G
Package
Marking
PG-TO252-3
180N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
T C=25 °C2)
I D
Continuous drain current
43
30
A
T C=100 °C
Pulsed drain current2)
I D,pulse
EAS
T C=25 °C
172
I D=33 A, R GS=25 W
Avalanche energy, single pulse
Gate source voltage
50
mJ
V
VGS
±20
Ptot
T C=25 °C
Power dissipation
71
W
°C
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 175
55/175/56
1)J-STD20 and JESD22
2) See figure 3
Rev. 2.3
page 1
2014-05-19
IPD180N10N3 G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
Thermal resistance,
-
-
-
-
-
-
2.1
75
50
K/W
R thJA
minimal footprint
6 cm2 cooling area3)
junction - ambient
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V(BR)DSS VGS=0 V, I D=1 mA
VGS(th) VDS=VGS, I D=33 µA
Drain-source breakdown voltage
Gate threshold voltage
100
2
-
-
V
2.7
3.5
VDS=100 V, VGS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
-
-
0.1
10
1
µA
VDS=100 V, VGS=0 V,
T j=125 °C
100
I GSS
VGS=20 V, VDS=0 V
Gate-source leakage current
-
-
1
100 nA
R DS(on) VGS=10 V, I D=33 A
Drain-source on-state resistance
14.7
18
mW
VGS=6 V, I D=16 A
-
-
18.4
1.4
33
-
R G
Gate resistance
W
|VDS|>2|I D|R DS(on)max
I D=33 A
,
g fs
Transconductance
20
40
-
S
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.3
page 2
2014-05-19
IPD180N10N3 G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
1350
237
11
1800 pF
VGS=0 V, VDS=50 V,
f =1 MHz
C oss
C rss
t d(on)
t r
315
-
12
-
-
-
-
ns
12
VDD=50 V, VGS=10 V,
I D=33 A, R G,ext=1.6 W
t d(off)
t f
Turn-off delay time
Fall time
19
5
Gate Charge Characteristics6)
Gate to source charge
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
7
4
-
-
nC
Q gd
VDD=50 V, I D=33 A,
VGS=0 to 10 V
Q sw
Q g
6
-
Gate charge total
19
4.9
25
25
-
Vplateau
Q oss
Gate plateau voltage
Output charge
V
VDD=50 V, VGS=0 V
33
nC
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
43
A
T C=25 °C
I S,pulse
172
VGS=0 V, I F=33 A,
T j=25 °C
VSD
Diode forward voltage
-
1
1.2
V
t rr
Reverse recovery time
-
-
55
92
-
-
ns
VR=15 V, I F=33 A,
diF/dt =100 A/µs
Q rr
Reverse recovery charge
nC
6) See figure 16 for gate charge parameter definition
Rev. 2.3
page 3
2014-05-19
IPD180N10N3 G
1 Power dissipation
2 Drain current
Ptot=f(T C)
I D=f(T C); VGS≥10 V
80
70
60
50
40
30
20
10
0
50
40
30
20
10
0
0
50
100
150
200
0
50
100
150
200
TC [°C]
TC [°C]
3 Safe operating area
I D=f(VDS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
103
101
limited by on-state
resistance
1 µs
0.5
102
101
100
100
10 µs
0.2
100 µs
0.1
0.05
0.02
10-1
1 ms
0.01
single pulse
10 ms
DC
10-2
10-1
100
101
102
103
10-5
10-4
10-3
10-2
10-1
100
VDS [V]
tp [s]
Rev. 2.3
page 4
2014-05-19
IPD180N10N3 G
5 Typ. output characteristics
I D=f(VDS); T j=25 °C
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: VGS
parameter: VGS
160
35
140
4.5 V
30
10 V
5 V
120
7.5 V
25
20
15
10
5
100
80
6 V
6 V
7.5 V
10 V
60
5.5 V
40
5 V
20
4.5 V
0
0
0
0
1
2
3
4
5
0
20
40
60
VDS [V]
ID [A]
7 Typ. transfer characteristics
I D=f(VGS); |VDS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
80
60
40
20
60
40
20
0
25 °C
175 °C
0
0
2
4
6
8
0
20
40
60
80
VGS [V]
ID [A]
Rev. 2.3
page 5
2014-05-19
IPD180N10N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
VGS(th)=f(T j); VGS=VDS
parameter: I D
R DS(on)=f(T j); I D=33 A; VGS=10 V
40
36
32
28
4
3.5
3
330 µA
2.5
24
33 µA
98 %
20
2
1.5
1
typ
16
12
8
0.5
0
4
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tj [°C]
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(VSD
C =f(VDS); VGS=0 V; f =1 MHz
)
parameter: T j
104
103
Ciss
103
102
101
102
Coss
175 °C, 98%
25 °C
175 °C
101
Crss
25 °C, 98%
100
0
0
20
40
60
80
0.5
1
1.5
2
VDS [V]
VSD [V]
Rev. 2.3
page 6
2014-05-19
IPD180N10N3 G
13 Avalanche characteristics
14 Typ. gate charge
VGS=f(Q gate); I D=33 A pulsed
parameter: VDD
I AS=f(t AV); R GS=25 W
parameter: T j(start)
100
10
80 V
8
50 V
20 V
6
25 °C
10
100 °C
150 °C
4
2
1
0
0.1
1
10
100
1000
0
4
8
12
16
20
tAV [µs]
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
VBR(DSS)=f(T j); I D=1 mA
110
105
100
95
V GS
Qg
V gs(th)
Qg(th)
Qsw
Qgd
Qgate
Qgs
90
-60
-20
20
60
100
140
180
Tj [°C]
Rev. 2.3
page 7
2014-05-19
IPD180N10N3 G
PG-TO-252
Rev. 2.3
page 8
2014-05-19
IPD180N10N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.3
page 9
2014-05-19
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