IPD110N12N3G [INFINEON]
OptiMOSTM3Power-Transistor;
| 型号： | IPD110N12N3G |
| 厂家： | 
Infineon |
| 描述： | OptiMOSTM3Power-Transistor |
| 文件： | 总10页 (文件大小：324K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPD110N12N3 G
IPS110N12N3 G
OptiMOSTM3Power-Transistor
Features
Product Summary
V DS
120
11
V
• N-channel, normal level
R DS(on),max
I D
mΩ
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
75
A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant; halogen free
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPS110N12N3 G
IPD110N12N3 G
Package
Marking
PG-TO251-3
110N12N
PG-TO252-3
110N12N
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
T C=25 °C
Continuous drain current
75
54
A
T C=100 °C
Pulsed drain current2)
I D,pulse
E AS
T C=25 °C
300
I D=75 A, R GS=25 Ω
Avalanche energy, single pulse
120
mJ
V
Gate source voltage3)
V GS
±20
P tot
T C=25 °C
Power dissipation
136
W
°C
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 175
55/175/56
1)J-STD20 and JESD22
2) see figure 3
3)
T
jmax
=150°C and duty cycle D=0.01 for Vgs<-5V
Rev. 2.2
page 1
2009-07-09
IPD110N12N3 G
IPS110N12N3 G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
-
-
-
-
-
-
1.1
75
50
K/W
R thJA
minimal footprint
Thermal resistance, junction -
ambient
6 cm2 cooling area4)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0 V, I D=1 mA
Drain-source breakdown voltage
Gate threshold voltage
120
2
-
-
V
V GS(th)
V DS=V GS, I D=83 µA
3
4
V DS=100 V, V GS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
-
0.1
1
µA
V
DS=100 V, V GS=0 V,
-
-
10
1
100
T j=125 °C
I GSS
V GS=20 V, V DS=0 V
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
100 nA
R DS(on) V GS=10 V, I D=75 A
-
9.2
1.5
83
11
-
mΩ
Ω
R G
-
|V DS|>2|I D|R DS(on)max
,
g fs
Transconductance
42
-
S
I D=75 A
2
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.2
page 2
2009-07-09
IPD110N12N3 G
IPS110N12N3 G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
3240
408
22
4310 pF
V GS=0 V, V DS=60 V,
f =1 MHz
C oss
C rss
t d(on)
t r
543
-
16
-
-
-
-
ns
16
V
DD=60 V, V GS=10 V,
I D=75 A, R G=1.6 Ω
t d(off)
t f
Turn-off delay time
Fall time
24
8
Gate Charge Characteristics5)
Gate to source charge
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
18
12
20
49
5.6
56
-
-
nC
Q gd
V DD=60 V, I D=75 A,
GS=0 to 10 V
Q sw
Q g
-
V
Gate charge total
65
-
V plateau
Q oss
Gate plateau voltage
Output charge
V
V DD=60 V, V GS=0 V
75
nC
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
75
A
T C=25 °C
I S,pulse
300
V GS=0 V, I F=75 A,
T j=25 °C
V SD
Diode forward voltage
-
1
1.2
V
t rr
Reverse recovery time
-
-
90
ns
V R=60 V, I F=I S,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
249
nC
5) See figure 16 for gate charge parameter definition
Rev. 2.2
page 3
2009-07-09
IPD110N12N3 G
IPS110N12N3 G
1 Power dissipation
2 Drain current
P
tot=f(T C)
I D=f(T C); V GS≥10 V
140
120
100
80
80
70
60
50
40
30
20
10
0
60
40
20
0
0
50
100
150
200
0
50
100
150
200
T C [°C]
T C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
103
101
1 µs
10 µs
102
100 µs
100
1 ms
0.5
DC
101
10 ms
0.2
0.1
10-1
0.05
0.02
100
0.01
single pulse
10-1
10-2
10-1
100
101
V DS [V]
102
103
10-5
10-4
10-3
10-2
10-1
100
t p [s]
Rev. 2.2
page 4
2009-07-09
IPD110N12N3 G
IPS110N12N3 G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
250
30
10 V
8 V
5 V
4.5 V
7 V
25
20
15
10
5
200
150
5.5 V
6.5 V
6 V
100
6 V
10 V
5.5 V
50
5 V
4.5 V
0
0
0
1
2
3
4
5
0
20
40
60
80
V DS [V]
ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
200
150
100
100
80
60
40
20
0
175 °C
50
25 °C
0
0
2
4
6
8
0
20
40
60
80
V GS [V]
ID [A]
Rev. 2.2
page 5
2009-07-09
IPD110N12N3 G
IPS110N12N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS
parameter: I D
R
DS(on)=f(T j); I D=75 A; V GS=10 V
25
4
3.5
3
20
830 µA
83 µA
2.5
15
98 %
2
1.5
1
typ
10
5
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
T j [°C]
100
140
180
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
104
103
Ciss
25 °C
175 °C
175 °C, 98%
103
102
101
102
Coss
25 °C, 98%
101
Crss
100
0
0
20
40
60
80
100
0.5
1
1.5
2
V DS [V]
V SD [V]
Rev. 2.2
page 6
2009-07-09
IPD110N12N3 G
IPS110N12N3 G
13 Avalanche characteristics
AS=f(t AV); R GS=25 Ω
14 Typ. gate charge
GS=f(Q gate); I D=67 A pulsed
V
I
parameter: T j(start)
parameter: V DD
103
10
96 V
60 V
8
6
4
2
102
24 V
25 °C
100 °C
150 °C
101
100
100
0
0
101
102
103
10
20
30
40
50
t AV [µs]
Q gate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)=f(T j); I D=1 mA
135
130
125
120
115
110
105
V GS
Q g
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
-60
-20
20
60
100
140
180
T j [°C]
Rev. 2.2
page 7
2009-07-09
IPD110N12N3 G
IPS110N12N3 G
PG-TO-251SL : Outline
Rev. 2.2
page 8
2009-07-09
IPD110N12N3 G
IPS110N12N3 G
PG-TO252-3: Outline
Rev. 2.2
page 9
2009-07-09
IPD110N12N3 G
IPS110N12N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.2
page 10
2009-07-09
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