select brandShort,logo,brand from pdf_brand where id=10020 limit 1 IPB70N10S3L-12_技术文档

IPB70N10S3L-12 [INFINEON]

OptiMOS-T Power-Transistor; 的OptiMOS -T电源晶体管
IPB70N10S3L-12
型号: IPB70N10S3L-12
厂家: Infineon    Infineon
描述:

OptiMOS-T Power-Transistor
的OptiMOS -T电源晶体管

晶体 晶体管
文件: 总9页 (文件大小:188K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

IPB70N10S3L12ATMA1

Power Field-Effect Transistor, 70A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB70N10SL-16

SIPMOS Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB70N10SL16ATMA1

Power Field-Effect Transistor, 70A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB70N12S3-11

Power Field-Effect Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB70N12S311ATMA1

Power Field-Effect Transistor, 70A I(D), 120V, 0.0113ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263-3-2, 3/2 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB70N12S3L-12

Power Field-Effect Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB70N12S3L12ATMA1

Power Field-Effect Transistor, 70A I(D), 120V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263-3-2, 3/2 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB70P04P4-09

OptiMOS-P2 Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB720P15LM

D²PAK 封装型 100 V OptiMOS™ P 沟道 MOSFET 是面向电池管理、负载开关和反极性保护应用的全新技术。P 沟道器件的主要优势在于降低中低功率应用的设计复杂度。此类产品可轻松连接 MCU,开关速度快且雪崩能力强,尤其适合质量要求高的应用。器件支持逻辑电平,具备较宽的 RDS(on) 范围和低 Qg,低负载下效率较高。

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB77N06S2-12

OptiMOS Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB77N06S212ATMA2

Power Field-Effect Transistor, 77A I(D), 55V, 0.0117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB77N06S3-09

OptiMOS㈢-T Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB77N06S3-09_07

OptiMOS-T2 Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB77N06S309ATMA1

Power Field-Effect Transistor, 77A I(D), 55V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB79CN10NG

Power Field-Effect Transistor, 13A I(D), 100V, 0.079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB80CN10NG

OptiMOS㈢2 Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB80N03S4L-02

OptiMOS-T2 Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB80N03S4L-03

OptiMOS-T2 Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB80N03S4L-03_10

OptiMOS-T2 Power-Transistor

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON

IPB80N03S4L03ATMA1

Power Field-Effect Transistor, 80A I(D), 30V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON