IPB70N10S3L12ATMA1 [INFINEON]
Power Field-Effect Transistor, 70A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN;
| 型号： | IPB70N10S3L12ATMA1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 70A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：163K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPB70N10S3L-12
IPI70N10S3L-12, IPP70N10S3L-12
OptiMOS®-T Power-Transistor
Product Summary
V DS
100
12
V
R DS(on),max (SMD version)
mW
A
I D
70
Features
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
3N10L12
3N10L12
3N10L12
IPB70N10S3L-12
IPI70N10S3L-12
IPP70N10S3L-12
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
I D
T C=25 °C, V GS=10 V
Continuous drain current
70
48
A
T C=100 °C,
V GS=10 V1)
Pulsed drain current1)
I D,pulse
E AS
T C=25 °C
I D=35A
280
410
70
Avalanche energy, single pulse1)
Avalanche current, single pulse
mJ
A
I AS
Gate source voltage2)
V GS
±20
125
V
P tot
T C=25 °C
Power dissipation
W
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... +175
55/175/56
°C
Rev. 1.2
page 1
2012-05-10
IPB70N10S3L-12
IPI70N10S3L-12, IPP70N10S3L-12
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Thermal characteristics1)
R thJC
R thJA
R thJA
Thermal resistance, junction - case
-
-
-
-
1.2
62
K/W
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
minimal footprint
-
-
-
-
62
40
6 cm2 cooling area3)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0 V, I D= 1 mA
V GS(th) V DS=V GS, I D=83µA
Drain-source breakdown voltage
Gate threshold voltage
100
1.2
-
-
V
1.7
2.4
V DS=80 V, V GS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
-
-
0.01
0.1
1
µA
V DS=80 V, V GS=0 V,
T j=125 °C2)
10
I GSS
V GS=20V, V DS=0V
Gate-source leakage current
-
-
-
100 nA
R DS(on) V GS=4.5V, I D=70A
Drain-source on-state resistance
12.2
15.8
15.5
12.1
11.8
mW
V GS=4.5V, I D=70A,
SMD version
-
-
-
11.9
10.1
9.8
V GS=10 V, I D=70 A
V GS=10 V, I D=70 A,
SMD version
Rev. 1.2
page 2
2012-05-10
IPB70N10S3L-12
IPI70N10S3L-12, IPP70N10S3L-12
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Dynamic characteristics1)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
4270
950
90
10
5
5550 pF
1230
V GS=0V, V DS=25V,
f =1MHz
135
-
-
-
-
ns
V DD=20 V, V GS=10 V,
I D=50 A, R G=3.5 W
t d(off)
t f
Turn-off delay time
Fall time
28
5
Gate Charge Characteristics1)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
16
11
60
3.7
21
17
80
-
nC
Q gd
V DD=80 V, I D=70 A,
V GS=0 to 10 V
Q g
V plateau
Gate plateau voltage
V
A
Reverse Diode
Diode continous forward current1)
Diode pulse current1)
I S
-
-
-
-
70
T C=25°C
I S,pulse
280
V GS=0 V, I F=70 A,
T j=25 °C
V SD
Diode forward voltage
Reverse recovery time1)
Reverse recovery charge1)
0.6
1
1.2
V
V R=50V, I F=I S,
di F/dt =100A/µs
t rr
-
-
80
-
-
ns
nC
Q rr
185
1) Defined by design. Not subject to production test.
2) Qualified with VGS = +20/-5V
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.2
page 3
2012-05-10
IPB70N10S3L-12
IPI70N10S3L-12, IPP70N10S3L-12
1 Power dissipation
2 Drain current
P tot = f(T C); V GS ≥ 6 V
I D = f(T C); V GS ≥ 6 V; SMD
140
120
100
80
80
70
60
50
40
30
20
10
0
60
40
20
0
0
50
100
150
200
0
50
100
150
200
T C [°C]
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
Z thJC = f(t p)
I D = f(V DS); T C = 25 °C; D = 0; SMD
parameter: t p
parameter: D =t p/T
101
1000
100
10
1 µs
100
0.5
10 µs
100 µs
0.1
1 ms
10-1
0.05
0.01
10-2
single pulse
10-3
1
10-6
10-5
10-4
10-3
10-2
10-1
100
0.1
1
10
100
t p [s]
V DS [V]
Rev. 1.2
page 4
2012-05-10
IPB70N10S3L-12
IPI70N10S3L-12, IPP70N10S3L-12
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C; SMD
parameter: V GS
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C; SMD
parameter: V GS
280
32
10 V
5 V
260
240
220
200
180
160
140
120
100
80
4 V
3.5 V
3 V
4.5 V
24
16
8
4 V
4.5 V
60
3.5 V
3 V
5 V
10 V
40
20
0
0
1
2
3
4
5
0
20
40
60
80
100 120 140
V DS [V]
I D [A]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 50 A; V GS = 10 V; SMD
150
100
50
25
20
15
10
5
-55 °C
25 °C
175 °C
0
1
2
3
4
5
-60
-20
20
60
100
140
180
V GS [V]
T j [°C]
Rev. 1.2
page 5
2012-05-10
IPB70N10S3L-12
IPI70N10S3L-12, IPP70N10S3L-12
9 Typ. gate threshold voltage
V GS(th) = f(T j); V GS = V DS
parameter: I D
10 Typ. capacitances
C = f(V DS); V GS = 0 V; f = 1 MHz
2.5
104
Ciss
2
400 µA
Coss
103
80 µA
1.5
Crss
1
0.5
0
102
101
0
5
10
15
20
25
30
-60
-20
20
60
T j [°C]
100
140
180
V DS [V]
11 Typical forward diode characteristicis
IF = f(VSD
12 Typ. avalanche characteristics
I A S= f(t AV
)
)
parameter: T j
parameter: Tj(start)
103
100
25 °C
102
100 °C
150 °C
10
101
25 °C
175 °C
100
0
1
0.2
0.4
0.6
0.8
1
1.2
1.4
0.1
1
10
t AV [µs]
100
1000
V SD [V]
Rev. 1.2
page 6
2012-05-10
IPB70N10S3L-12
IPI70N10S3L-12, IPP70N10S3L-12
13 Typical avalanche energy
E AS = f(T j)
14 Typ. drain-source breakdown voltage
V BR(DSS) = f(T j); I D = 1 mA
parameter: I D
115
900
800
110
105
100
95
700
17.5 A
600
500
400
35 A
300
200
70 A
100
0
90
-55
-15
25
65
105
145
25
75
125
175
T j [°C]
T j [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 70 A pulsed
parameter: V DD
10
9
V GS
Q g
8
7
6
80 V
20 V
5
4
3
2
1
0
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
0
10
20
30
40
50
60
Q gate [nC]
Rev. 1.2
page 7
2012-05-10
IPB70N10S3L-12
IPI70N10S3L-12, IPP70N10S3L-12
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2008
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including
without limitation warranties of non‑infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information
on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the
express written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body, or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
Rev. 1.2
page 8
2012-05-10
IPB70N10S3L-12
IPI70N10S3L-12, IPP70N10S3L-12
Revision History
Version
Date
Changes
Revision 1.1
Revision 1.2
03.06.2011
10.05.2012
Update of Idss
RthJC reduced in table
Rev. 1.2
page 9
2012-05-10
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