IPB123N10N3GATMA1 [INFINEON]
Power Field-Effect Transistor, 58A I(D), 100V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3;![IPB123N10N3GATMA1](http://pdffile.icpdf.com/pdf2/p00253/img/icpdf/IPB123N10N3G_1530874_icpdf.jpg)
型号: | IPB123N10N3GATMA1 |
厂家: | ![]() |
描述: | Power Field-Effect Transistor, 58A I(D), 100V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 开关 脉冲 晶体管 |
文件: | 总11页 (文件大小:650K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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IPB12CN10NGATMA1
Power Field-Effect Transistor, 67A I(D), 100V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
INFINEON
![](http://pdffile.icpdf.com/pdf1/p00176/img/page/IPB12_986858_files/IPB12_986858_1.jpg)
![](http://pdffile.icpdf.com/pdf1/p00176/img/page/IPB12_986858_files/IPB12_986858_2.jpg)
IPB12CN10NG_10
OptiMOS?2 Power-Transistor Features N-channel, normal level Very low on-resistance R DS
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00236/img/page/IPB12CNE8NGA_1383432_files/IPB12CNE8NGA_1383432_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00236/img/page/IPB12CNE8NGA_1383432_files/IPB12CNE8NGA_1383432_2.jpg)
IPB12CNE8NGATMA1
Power Field-Effect Transistor, 67A I(D), 85V, 0.0129ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
INFINEON
![](http://pdffile.icpdf.com/pdf1/p00137/img/page/IPB12_755280_files/IPB12_755280_1.jpg)
![](http://pdffile.icpdf.com/pdf1/p00137/img/page/IPB12_755280_files/IPB12_755280_2.jpg)
IPB12CNE8N_07
OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00314/img/page/IPB136N08N3G_1888872_files/IPB136N08N3G_1888872_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00314/img/page/IPB136N08N3G_1888872_files/IPB136N08N3G_1888872_2.jpg)
IPB136N08N3G
Power Field-Effect Transistor, 45A I(D), 80V, 0.0136ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00362/img/page/IPP147N12N3-_2216195_files/IPP147N12N3-_2216195_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00362/img/page/IPP147N12N3-_2216195_files/IPP147N12N3-_2216195_2.jpg)
IPB144N12N3 G
120V OptiMOS™ 系列提供业内最低导通电阻和最快开关性能,适用于各种应用,支持实现卓越性能。120V OptiMOS™ 技术带来全新可能性,帮助实现优化解决方案。
INFINEON
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