首页 |元器件品牌

IPB13N03LB [INFINEON]

OptiMOS㈢2 Power-Transistor; OptiMOS®2功率三极管
IPB13N03LB
型号： IPB13N03LB
厂家： Infineon    Infineon
描述：

OptiMOS㈢2 Power-Transistor
OptiMOS®2功率三极管
文件： 总9页 (文件大小：280K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
IPB13N03LB  
OptiMOS®2 Power-Transistor  
Product Summary  
Features  
V DS  
30  
12.5  
30  
V
• Ideal for high-frequency dc/dc converters  
• Qualified according to JEDEC1) for target applications  
R DS(on),max  
I D  
mΩ  
A
• N-channel - Logic level  
• Excellent gate charge x R DS(on) product (FOM)  
• Very low on-resistance R DS(on)  
PG-TO263-3  
• Superior thermal resistance  
• 175 °C operating temperature  
• dv /dt rated  
• Pb-free lead plating; RoHS compliant  
Type  
Package  
Marking  
IPB13N03LB  
P-TO263-3  
13N03LB  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
T C=25 °C2)  
I D  
Continuous drain current  
30  
30  
A
T C=100 °C  
T C=25 °C3)  
I D,pulse  
Pulsed drain current  
120  
64  
E AS  
I D=30 A, R GS=25 Ω  
Avalanche energy, single pulse  
mJ  
I D=30 A, V DS=20 V,  
di /dt =200 A/µs,  
Reverse diode dv /dt  
dv /dt  
6
kV/µs  
T
j,max=175 °C  
Gate source voltage4)  
V GS  
±20  
52  
V
P tot  
T C=25 °C  
Power dissipation  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... 175  
55/175/56  
1) J-STD20 and JESD22  
Rev. 0.93  
page 1  
2006-05-10  
IPB13N03LB  
Values  
typ.  
Parameter  
Symbol Conditions  
Unit  
min.  
max.  
Thermal characteristics  
R thJC  
Thermal resistance, junction - case  
SMD version, device on PCB  
-
-
-
-
-
-
2.9  
62  
40  
K/W  
R thJA  
minimal footprint  
6 cm2 cooling area5)  
Electrical characteristics, at T j=25 °C, unless otherwise specified  
Static characteristics  
V (BR)DSS  
V GS(th)  
V
V
GS=0 V, I D=1 mA  
DS=V GS, I D=20 µA  
Drain-source breakdown voltage  
Gate threshold voltage  
30  
-
-
V
1.2  
1.6  
2
V
DS=30 V, V GS=0 V,  
I DSS  
Zero gate voltage drain current  
-
-
0.1  
10  
1
µA  
T j=25 °C  
V
DS=30 V, V GS=0 V,  
100  
T j=125 °C  
I GSS  
V
V
V
GS=20 V, V DS=0 V  
GS=4.5 V, I D=20 A  
GS=10 V, I D=30 A  
Gate-source leakage current  
-
-
-
-
10  
100 nA  
R DS(on)  
Drain-source on-state resistance  
14.9  
10.4  
1.2  
18.6  
12.5  
-
mΩ  
R G  
g fs  
Gate resistance  
Ω
|V DS|>2|I D|R DS(on)max  
I D=30 A  
,
Transconductance  
42  
-
S
2) Current is limited by bondwire; with anR thJC=2.9 K/W the chip is able to carry 48 A.  
3) See figure 3  
4) T j,max=150 °C and duty cycle D <0.25 for V GS<-5 V  
2
5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical in still air.  
Rev. 0.93  
page 2  
2006-05-10  
IPB13N03LB  
Values  
typ.  
Parameter  
Symbol Conditions  
Unit  
min.  
max.  
Dynamic characteristics  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
C iss  
-
-
-
-
-
-
-
1019  
364  
49  
1355 pF  
485  
V
GS=0 V, V DS=15 V,  
C oss  
Crss  
t d(on)  
t r  
f =1 MHz  
74  
4
7
6
ns  
4
V
DD=15 V, V GS=10 V,  
I D=25 A, R G=2.7 Ω  
t d(off)  
t f  
Turn-off delay time  
Fall time  
16  
23  
4.2  
2.8  
Gate Charge Characteristics6)  
Gate to source charge  
Gate charge at threshold  
Gate to drain charge  
Switching charge  
Q gs  
-
-
-
-
-
-
3.6  
1.6  
2.2  
4.2  
8
4.8  
2.2  
3.4  
6
nC  
Q g(th)  
Q gd  
V
V
DD=15 V, I D=25 A,  
GS=0 to 5 V  
Q sw  
Q g  
Gate charge total  
11  
-
V plateau  
Gate plateau voltage  
3.5  
V
V
V
DS=0.1 V,  
Q g(sync)  
Q oss  
Gate charge total, sync. FET  
Output charge  
-
-
7
8
9
nC  
GS=0 to 5 V  
V
DD=15 V, V GS=0 V  
11  
Reverse Diode  
I S  
Diode continous forward current  
Diode pulse current  
-
-
-
-
30  
A
T C=25 °C  
I S,pulse  
120  
V
GS=0 V, I F=30 A,  
V SD  
Q rr  
Diode forward voltage  
-
-
0.95  
-
1.2  
10  
V
T j=25 °C  
V R=15 V, I F=I S,  
di F/dt =400 A/µs  
Reverse recovery charge  
nC  
6) See figure 16 for gate charge parameter definition  
Rev. 0.93  
page 3  
2006-05-10  
IPB13N03LB  
1 Power dissipation  
2 Drain current  
P
tot=f(T C)  
I D=f(T C); V GS≥10 V  
60  
50  
40  
30  
20  
10  
40  
30  
20  
10  
0
0
0
50  
100  
150  
200  
0
50  
100  
150  
200  
T
C [°C]  
T
C [°C]  
3 Safe operating area  
I D=f(V DS); T C=25 °C; D =0  
parameter: t p  
4 Max. transient thermal impedance  
thJC=f(t p)  
Z
parameter: D =t p/T  
1000  
10  
0.5  
1
1 µs  
0.2  
limited by on-state  
resistance  
100  
10 µs  
0.1  
0.05  
0.02  
0.1  
single pulse  
100 µs  
0.01  
DC  
10  
1 ms  
10 ms  
0.01  
1
0.001  
10-6  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
0.1  
1
10  
100  
0
V
DS [V]  
t p [s]  
Rev. 0.93  
page 4  
2006-05-10  
IPB13N03LB  
5 Typ. output characteristics  
I D=f(V DS); T j=25 °C  
6 Typ. drain-source on resistance  
DS(on)=f(I D); T j=25 °C  
R
parameter: V GS  
parameter: V GS  
80  
100  
90  
70  
3.2V  
3.8 V  
10 V  
80  
3.5 V  
60  
4.1 V  
4.5 V  
4.5 V  
3 V  
70  
60  
50  
40  
30  
20  
10  
0
50  
40  
30  
20  
10  
4.1 V  
3.8 V  
3.5 V  
3.2 V  
10 V  
3 V  
2.8 V  
0
0
20  
40  
60  
80  
100  
0
1
2
3
V
DS [V]  
I
D [A]  
7 Typ. transfer characteristics  
I D=f(V GS); |V DS|>2|I D|R DS(on)max  
parameter: T j  
8 Typ. forward transconductance  
g fs=f(I D); T j=25 °C  
100  
90  
80  
70  
60  
50  
40  
30  
20  
70  
60  
50  
40  
30  
20  
10  
0
175 °C  
10  
25 °C  
0
0
1
2
3
4
5
0
20  
40  
60  
80  
V
GS [V]  
I
D [A]  
Rev. 0.93  
page 5  
2006-05-10  
IPB13N03LB  
9 Drain-source on-state resistance  
10 Typ. gate threshold voltage  
GS(th)=f(T j); V GS=V DS  
R
DS(on)=f(T j); I D=30 A; V GS=10 V  
V
parameter: I D  
24  
22  
20  
18  
16  
2.5  
2
1.5  
1
200 µA  
98 %  
14  
20 µA  
12  
typ  
10  
8
6
0.5  
4
2
0
0
-60  
-20  
20  
60  
100  
140  
180  
-60  
-20  
20  
60  
T j [°C]  
100  
140  
180  
T j [°C]  
11 Typ. Capacitances  
12 Forward characteristics of reverse diode  
I F=f(V SD  
C =f(V DS); V GS=0 V; f =1 MHz  
)
parameter: T j  
10000  
1000  
25 °C  
Ciss  
1000  
100  
10  
100  
10  
175 °C  
175°C 98%  
Coss  
25°C 98%  
Crss  
1
0
5
10  
15  
20  
25  
30  
0.0  
0.5  
1.0  
SD [V]  
1.5  
2.0  
V
DS [V]  
V
Rev. 0.93  
page 6  
2006-05-10  
IPB13N03LB  
13 Avalanche characteristics  
AS=f(t AV); R GS=25 Ω  
14 Typ. gate charge  
GS=f(Q gate); I D=25 A pulsed  
V
I
parameter: Tj(start)  
parameter: V DD  
100  
12  
15 V  
20 V  
10  
8
5 V  
25 °C  
100 °C  
150 °C  
10  
6
4
2
1
1
0
0
10  
100  
1000  
10  
Q gate [nC]  
20  
t
AV [µs]  
15 Drain-source breakdown voltage  
16 Gate charge waveforms  
V
BR(DSS)=f(T j); I D=1 mA  
38  
36  
34  
32  
30  
28  
26  
24  
22  
20  
V GS  
Q g  
V gs(th)  
Q g(th)  
Q sw  
Q gd  
Q gate  
Q gs  
-60  
-20  
20  
60  
100  
140  
180  
T j [°C]  
Rev. 0.93  
page 7  
2006-05-10  
IPB13N03LB  
PG-TO263-3: Outline  
Rev. 0.93  
page 8  
2006-05-10  
IPB13N03LB  
Published by  
Infineon Technologies AG  
81726 München, Germany  
© Infineon Technologies AG 2006.  
All Rights Reserved.  
Attention please!  
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or  
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values  
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby  
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of  
non-infringement of intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices please contact your nearest  
Infineon Technologies Office (www.infineon.com ).  
Warnings  
Due to technical requirements components may contain dangerous substances. For information on the types in  
question please contact your nearest Infineon Technologies Office.  
Infineon Technologies Components may only be used in life-support devices or systems with the express written  
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure  
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support  
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain  
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may  
be endangered.  
Rev. 0.93  
page 9  
2006-05-10  

相关型号：

IPB144N12N3 G

 120V OptiMOS™ 系列提供业内最低导通电阻和最快开关性能，适用于各种应用，支持实现卓越性能。120V OptiMOS™ 技术带来全新可能性，帮助实现优化解决方案。
INFINEON

IPB144N12N3G

 OptiMOS?3 Power-Transistor
INFINEON

IPB144N12N3GATMA1

 Power Field-Effect Transistor, 56A I(D), 120V, 0.0144ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
INFINEON

IPB147N03LG

 OptiMOS™3 Power-Transistor Features Fast switching MOSFET for SMPS
INFINEON

IPB147N03LGATMA1

 Power Field-Effect Transistor, 20A I(D), 30V, 0.0217ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
INFINEON

IPB14N03LA

 OptiMOS 2 Power-Transistor
INFINEON

IPB14N03LAG

 OptiMOS㈢2 Power-Transistor
INFINEON

IPB156N22NFD

 200V、220V、250V 和 300V 的 OptiMOS™ 快速二极管（FD）针对体二极管硬换向进行了优化。这些器件是电信、工业电源、 D 类音频放大器、电机控制和 DC-AC 逆变器等硬开关应用的理想选择。
INFINEON

IPB15N03L

 OptiMOS Buck converter series
INFINEON

IPB160N04S2-03

 OptiMOS㈢ - T Power-Transistor
INFINEON

IPB160N04S203ATMA1

 Power Field-Effect Transistor, 160A I(D), 40V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6
INFINEON

IPB160N04S203ATMA4

 Power Field-Effect Transistor, 160A I(D), 40V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6
INFINEON
©2020 ICPDF网 联系我们和版权申明