IKW75N65EL5 [INFINEON]
IGBT TRENCHSTOP™ 5;
| 型号： | IKW75N65EL5 |
| 厂家： | 
Infineon |
| 描述： | IGBT TRENCHSTOP™ 5 双极性晶体管 |
| 文件： | 总17页 (文件大小：1830K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT
LowꢀVCE(sat)ꢀIGBTꢀinꢀTRENCHSTOPTMꢀ5ꢀtechnologyꢀcopackedꢀwithꢀRAPIDꢀ1
fastꢀandꢀsoftꢀantiparallelꢀdiode
IKW75N65EL5
650VꢀDuoPackꢀIGBTꢀandꢀdiode
LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration
Dataꢀsheet
IndustrialꢀPowerꢀControl
IKW75N65EL5
LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration
LowꢀVCE(sat)ꢀIGBTꢀinꢀTRENCHSTOPTMꢀ5ꢀtechnologyꢀcopackedꢀwithꢀRAPIDꢀ1
fastꢀandꢀsoftꢀantiparallelꢀdiode
ꢀ
C
FeaturesꢀandꢀBenefits:
LowꢀVCE(sat)ꢀL5ꢀtechnologyꢀoffering
•ꢀVeryꢀlowꢀcollector-emitterꢀsaturationꢀvoltageꢀVCEsat
•ꢀBest-in-Classꢀtradeoffꢀbetweenꢀconductionꢀandꢀswitchingꢀlosses
•ꢀ650Vꢀbreakdownꢀvoltage
G
•ꢀLowꢀgateꢀchargeꢀQG
E
•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀQualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀtargetꢀapplications
•ꢀPb-freeꢀleadꢀplating
•ꢀRoHSꢀcompliant
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀmodels:
http://www.infineon.com/igbt/
Applications:
•ꢀUninterruptibleꢀpowerꢀsupplies
•ꢀSolarꢀphotovoltaicꢀinverters
•ꢀWeldingꢀmachines
G
C
E
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
VCE
IC
VCEsat,ꢀTvj=25°C Tvjmax
1.1V 175°C
Marking
Package
PG-TO247-3
IKW75N65EL5
650V
75A
K75EEL5
Datasheet
www.infineon.com
PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument
Vꢀ2.2
2020-10-07
IKW75N65EL5
LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Datasheet
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IKW75N65EL5
LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C
VCE
650
V
1)
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
Tcꢀ=ꢀ25°C
IC
80.0
80.0
A
Tcꢀ=ꢀ100°C
2)
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
ICpuls
300.0
300.0
A
A
Turn off safe operating area
-
VCEꢀ≤ꢀ650V,ꢀTvjꢀ≤ꢀ175°C,ꢀtpꢀ=ꢀ1µs2)
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
Tcꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire
Tcꢀ=ꢀ100°C
IF
90.0
89.0
A
2)
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
IFpuls
VGE
300.0
A
V
Gate-emitter voltage
±20
±30
TransientꢀGate-emitterꢀvoltageꢀ(tpꢀ≤ꢀ10µs,ꢀDꢀ<ꢀ0.010)
PowerꢀdissipationꢀTcꢀ=ꢀ25°C
PowerꢀdissipationꢀTcꢀ=ꢀ100°C
536.0
268.0
Ptot
W
Operating junction temperature
Tvj
-40...+175
-55...+150
°C
°C
Storage temperature
Tstg
Soldering temperature,3)
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
0.6
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
Nm
ThermalꢀResistance
Value
min. typ. max.
Parameter
Symbol Conditions
Unit
RthꢀCharacteristics
IGBT thermal resistance,
junction - case
Rth(j-c)
Rth(j-c)
Rth(j-a)
-
-
-
-
-
-
0.28 K/W
0.46 K/W
40 K/W
Diode thermal resistance,
junction - case
Thermal resistance
junction - ambient
1) Both values limited by bondwires.
2) Defined by design. Not subject to production test.
3) Package not recommended for surface mount applications.
Datasheet
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LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ0.20mA
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ75.0A
Tvjꢀ=ꢀ25°C
Collector-emitter saturation voltage VCEsat
Tvjꢀ=ꢀ100°C
650
-
-
V
V
-
-
-
1.10 1.35
1.11
1.12
-
-
Tvjꢀ=ꢀ150°C
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ75.0A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ100°C
Tvjꢀ=ꢀ150°C
-
-
-
1.40 1.70
Diode forward voltage
VF
V
V
1.42
1.40
-
-
Gate-emitter threshold voltage
VGE(th)
ICꢀ=ꢀ1.00mA,ꢀVCEꢀ=ꢀ20V
4.2
5.0
5.8
VCEꢀ=ꢀ650V,ꢀVGEꢀ=ꢀ0V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ150°C
-
-
-
-
40
-
-
Zero gate voltage collector current ICES
µA
1000
5000
Tvjꢀ=ꢀ175°C
Gate-emitter leakage current
Transconductance
IGES
gfs
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ75.0A
-
-
-
100
-
nA
S
155.0
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
Cies
-
-
-
12100
150
-
-
-
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V
fꢀ=ꢀ1000kHz
Output capacitance
Coes
Cres
pF
Reverse transfer capacitance
42
VCCꢀ=ꢀ520V,ꢀICꢀ=ꢀ75.0A,
VGEꢀ=ꢀ15V
Gate charge
QG
LE
-
-
436.0
13.0
-
-
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from
case
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
40
11
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ75.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ4.0Ω,ꢀRG(off)ꢀ=ꢀ4.0Ω,
Lσꢀ=ꢀ40nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
275
50
ns
ns
Turn-on energy
Eon
Eoff
Ets
1.61
3.20
4.81
mJ
mJ
mJ
Turn-off energy
Total switching energy
Datasheet
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IKW75N65EL5
LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
114
1.37
29.0
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ75.0A,
diF/dtꢀ=ꢀ1500A/µs
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-2170
-
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
39
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ150°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ75.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ4.0Ω,ꢀRG(off)ꢀ=ꢀ4.0Ω,
Lσꢀ=ꢀ40nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
14
Turn-off delay time
Fall time
330
144
2.12
5.10
7.22
ns
ns
Turn-on energy
Eon
Eoff
Ets
mJ
mJ
mJ
Turn-off energy
Total switching energy
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
95
-
-
-
ns
µC
A
Tvjꢀ=ꢀ150°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ75.0A,
Qrr
2.43
40.0
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ1500A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-2900
-
A/µs
Datasheet
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IKW75N65EL5
LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration
540
480
420
360
300
240
180
120
60
100
10
1
not for linear use
0.1
0
1
10
100
1000
25
50
75
100
125
150
175
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 1. Forwardꢀbiasꢀsafeꢀoperatingꢀarea
Figure 2. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
(D=0,ꢀTC=25°C,ꢀTvj≤175°C,ꢀVGE=15V,ꢀtp=1µs,
ICmaxꢀdefinedꢀbyꢀdesignꢀ-ꢀnotꢀsubjectꢀto
production test)
temperature
(Tvj≤175°C)
90
80
70
60
50
40
30
20
10
0
225
200
VGE=18V
14V
11V
10V
8V
175
150
125
100
75
6V
5V
50
25
0
25
50
75
100
125
150
175
0.0
0.5
1.0
1.5
2.0
2.5
3.0
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 3. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
Figure 4. Typicalꢀoutputꢀcharacteristic
(Tvj=25°C)
(VGE≥15V,ꢀTvj≤175°C)
Datasheet
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IKW75N65EL5
LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration
225
200
220
200
180
160
140
120
100
80
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ150°C
VGE = 20V
18V
15V
12V
10V
8V
175
150
125
100
75
7V
6V
60
5V
50
40
25
20
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3
4
5
6
7
8
9
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 5. Typicalꢀoutputꢀcharacteristic
(Tvj=175°C)
Figure 6. Typicalꢀtransferꢀcharacteristic
(VCE=20V)
1.4
ICꢀ=ꢀ16A
ICꢀ=ꢀ35A
ICꢀ=ꢀ75A
td(off)
tf
td(on)
tr
1000
100
10
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
1
25
50
75
100
125
150
175
0
25
50
75 100 125 150 175 200 225
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 7. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
aꢀfunctionꢀofꢀjunctionꢀtemperature
collectorꢀcurrent
(VGE=15V)
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀRG(on)=4Ω,ꢀRG(off)=4Ω,ꢀdynamic
test circuit in Figure E)
Datasheet
8
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IKW75N65EL5
LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration
1000
100
10
td(off)
tf
td(on)
tr
td(off)
tf
td(on)
tr
1000
100
10
1
1
0
10
20
30
40
50
60
70
80
90
25
50
75
100
125
150
175
RG,ꢀGATEꢀRESISTANCEꢀ[Ω]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate Figure 10. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
resistance
junctionꢀtemperature
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀIC=75A,ꢀdynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=0/15V,
IC=75A,ꢀRG(on)=4Ω,ꢀRG(off)=4Ω,ꢀdynamicꢀtest
circuit in Figure E)
7
6
5
4
3
2
1
25.0
22.5
20.0
17.5
15.0
12.5
10.0
7.5
typ.
min.
max.
Eoff
Eon
Ets
5.0
2.5
0.0
25
50
75
100
125
150
0
25
50
75 100 125 150 175 200 225
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 11. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
ofꢀjunctionꢀtemperature
(IC=1mA)
functionꢀofꢀcollectorꢀcurrent
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀRG(on)=4Ω,ꢀRG(off)=4Ω,ꢀdynamic
test circuit in Figure E)
Datasheet
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IKW75N65EL5
LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration
16
8
7
6
5
4
3
2
1
0
Eoff
Eon
Ets
Eoff
Eon
Ets
14
12
10
8
6
4
2
0
0
10
20
30
40
50
60
70
80
90
25
50
75
100
125
150
175
RG,ꢀGATEꢀRESISTANCEꢀ[Ω]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistance
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=0/15V,ꢀIC=75A,ꢀdynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=0/15V,
IC=75A,ꢀRG(on)=4Ω,ꢀRG(off)=4Ω,ꢀdynamicꢀtest
circuit in Figure E)
10
18
16
14
12
10
8
Eoff
Eon
Ets
VCCꢀ=ꢀ130V
VCCꢀ=ꢀ520V
9
8
7
6
5
4
3
2
1
0
6
4
2
0
200
250
300
350
400
450
500
0
100
200
300
400
500
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
QG,ꢀGATEꢀCHARGEꢀ[nC]
Figure 15. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
Figure 16. Typicalꢀgateꢀcharge
(IC=75A)
(inductiveꢀload,ꢀTvj=150°C,ꢀVGE=0/15V,
IC=75A,ꢀRG(on)=4Ω,ꢀRG(off)=4Ω,ꢀdynamicꢀtest
circuit in Figure E)
Datasheet
10
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2020-10-07
IKW75N65EL5
LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration
1E+5
Cies
Coes
Cres
D = 0.5
0.2
0.1
1E+4
1000
100
0.1
0.05
0.02
0.01
single pulse
0.01
i:
ri[K/W]: 4.7E-3 0.0564027 0.0496416 0.1540335 0.0124251 1.7E-3
τi[s]: 2.7E-5 2.5E-4 2.2E-3 0.0141795 0.1200871 1.91251
1
2
3
4
5
6
10
0.001
0
5
10
15
20
25
30
1E-6
1E-5
1E-4
0.001
0.01
0.1
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
tp,ꢀPULSEꢀWIDTHꢀ[s]
Figure 17. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
Figure 18. IGBTꢀtransientꢀthermalꢀimpedance
(D=tp/T)
(VGE=0V,ꢀf=1MHz)
160
Tvjꢀ=ꢀ25°C,ꢀIFꢀ=ꢀ75A
Tvjꢀ=ꢀ150°C,ꢀIFꢀ=ꢀ75A
140
120
100
80
D = 0.5
0.1
0.2
0.1
0.05
0.02
0.01
single pulse
0.01
60
40
i:
1
2
3
4
5
6
7
ri[K/W]: 3.1E-4 0.01435 0.09435 0.09881 0.22828 0.01967 2.0E-3
τi[s]:
1.0E-5 3.0E-5
2.2E-4
2.2E-3
0.01247 0.10291 1.85641
0.001
1E-6
20
1000
1E-5
1E-4
0.001
0.01
0.1
2000
3000
4000
5000
tp,ꢀPULSEꢀWIDTHꢀ[s]
dIF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 19. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
Figure 20. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction
ofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀpulseꢀwidth
(D=tp/T)
(VR=400V)
Datasheet
11
Vꢀ2.2
2020-10-07
IKW75N65EL5
LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration
3.0
70
60
50
40
30
20
10
0
Tvjꢀ=ꢀ25°C,ꢀIFꢀ=ꢀ75A
Tvjꢀ=ꢀ150°C,ꢀIFꢀ=ꢀ75A
Tvjꢀ=ꢀ25°C,ꢀIFꢀ=ꢀ75A
Tvjꢀ=ꢀ150°C,ꢀIFꢀ=ꢀ75A
2.7
2.4
2.1
1.8
1.5
1.2
0.9
1000
2000
3000
4000
5000
1000
2000
3000
4000
5000
dIF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
dIF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 21. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
Figure 22. Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
0
225
Tvjꢀ=ꢀ25°C,ꢀIFꢀ=ꢀ75A
Tvjꢀ=ꢀ150°C,ꢀIFꢀ=ꢀ75A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
200
-1
-2
-3
-4
-5
-6
-7
175
150
125
100
75
50
25
0
1000
2000
3000
4000
5000
0.0
0.5
1.0
1.5
2.0
2.5
dIF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]
Figure 23. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
Figure 24. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction
ofꢀforwardꢀvoltage
(VR=400V)
Datasheet
12
Vꢀ2.2
2020-10-07
IKW75N65EL5
LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration
1.8
IFꢀ=ꢀ16A
IFꢀ=ꢀ35A
IFꢀ=ꢀ75A
1.6
1.4
1.2
1.0
0.8
0.6
0.4
25
50
75
100
125
150
175
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 25. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
Datasheet
13
Vꢀ2.2
2020-10-07
IKW75N65EL5
LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration
Package Drawing PG-TO247-3
MILLIMETERS
MAX.
DIMENSIONS
MIN.
4.70
2.20
1.50
1.00
1.60
2.57
0.38
20.70
13.08
0.51
15.50
12.38
3.40
1.00
A
A1
A2
b
5.30
2.60
2.50
1.40
2.41
3.43
0.89
21.50
17.65
1.35
16.30
14.15
5.10
2.60
DOCUMENT NO.
Z8B00003327
b1
b2
c
REVISION
D
06
D1
D2
E
3:1
SCALE
0 1 2 3 4
5mm
E1
E2
E3
e
EUROPEAN PROJECTION
5.44
L
19.80
3.85
3.50
5.35
6.04
20.40
4.50
3.70
6.25
6.30
L1
P
ISSUE DATE
25.07.2018
Q
S
Datasheet
14
Vꢀ2.2
2020-10-07
IKW75N65EL5
LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration
Testing Conditions
VGE(t)
I,V
90% VGE
trr = ta + tb
dIF/dt
Qrr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
parasitic capacitor C ,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t2
t4
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCE
t1
t3
t
t1
t2
t3
t4
Figure B.
Datasheet
15
Vꢀ2.2
2020-10-07
IKW75N65EL5
LowꢀVCE(sat)ꢀseriesꢀfifthꢀgeneration
RevisionꢀHistory
IKW75N65EL5
Revision:ꢀ2020-10-07,ꢀRev.ꢀ2.2
Previous Revision
Revision Date
Subjects (major changes since last revision)
2014-12-10 Final data sheet
2020-10-07 VGE(th): test condition update
2.1
2.2
Datasheet
16
Vꢀ2.2
2020-10-07
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