IKWH70N65WR6 [INFINEON]
TRENCHSTOP™ 5 RC WR6;
| 型号： | IKWH70N65WR6 |
| 厂家： | 
Infineon |
| 描述： | TRENCHSTOP™ 5 RC WR6 |
| 文件： | 总17页 (文件大小：1640K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IKWH70N65WR6
™
TRENCHSTOP 5 WR6 technology in enhanced creepage and clearance package
™
TRENCHSTOP 5 WR6 technology in enhanced creepage and clearance package offers improved reliability
against package contamination
Features
• VCE = 650 V
• IC = 70 A
• Pin-to-pin creepage distance > 4.8 mm
• Pin-to-pin clearance distance > 3.4 mm
• Monolithic diode optimized for PFC and welding applications
• Stable temperature behavior
• Very low VCEsat and low Eoff
• Easy parallel switching capability based on positive temperature coefficient of VCEsat
• Low temperature dependence of VCEsat and Esw
• Product spectrum and PSpice Models: http://www.infineon.com/igbt/
Potential applications
• PFC
• Welding
• ZCS applications
Product validation
• Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
Description
C
G
E
Type
Package
Marking
IKWH70N65WR6
PG-TO247-3-STD-NN4.8
H70EWR6
Datasheet
www.infineon.com
Please read the sections "Important notice" and "Warnings" at the end of this document
Revision 1.10
2022-12-06
IKWH70N65WR6
™
TRENCHSTOP 5 WR6 technology in enhanced creepage and clearance package
Table of contents
Table of contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1
2
3
4
5
6
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Datasheet
2
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2022-12-06
IKWH70N65WR6
™
TRENCHSTOP 5 WR6 technology in enhanced creepage and clearance package
1 Package
1
Package
Table 1
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
13
Unit
Min.
Max.
Internal emitter
inductance measured 5
mm (0.197 in.) from case
LE
nH
Storage temperature
Soldering temperature
Tstg
-55
150
260
°C
°C
Tsold
wave soldering 1.6 mm (0.063 in.) from case
for 10 s
Mounting torque
M
M3 screw, Maximum of mounting process: 3
0.6
40
Nm
Thermal resistance,
junction-ambient
Rth(j-a)
K/W
IGBT thermal resistance,
junction-case
Rth(j-c)
Rth(j-c)
0.5
1.9
K/W
K/W
Diode thermal resistance,
junction-case
2
IGBT
Table 2
Maximum rated values
Symbol Note or test condition
Parameter
Values
650
Unit
Collector-emitter voltage
VCE
Tvj ≥ 25 °C
V
A
DC collector current,
limited by Tvjmax
IC
Tc = 25 °C
122
Tc = 100 °C
77
Pulsed collector current, tp
limited by Tvjmax
ICpulse
210
A
A
Turn-off safe operating
area
VCE ≤ 650 V, Tvj ≤ 175 °C
tp ≤ 10 µs, D < 0.01
210
Gate-emitter voltage
VGE
VGE
20
30
V
V
Transient gate-emitter
voltage
Power dissipation
Ptot
Tc = 25 °C
290
145
W
Tc = 100 °C
Table 3
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
Unit
Min.
Max.
Collector-emitter
breakdown voltage
VBRCES IC = 0.2 mA, VGE=0 V
650
V
(table continues...)
Datasheet
3
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2022-12-06
IKWH70N65WR6
™
TRENCHSTOP 5 WR6 technology in enhanced creepage and clearance package
2 IGBT
Table 3
(continued) Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
1.55
1.8
Unit
Min.
Max.
Collector-emitter
saturation voltage
VCEsat IC = 70 A, VGE = 15 V
Tvj = 25 °C
1.85
V
V
Tvj = 175 °C
Gate-emitter threshold
voltage
VGEth
ICES
IC = 0.7 mA, VCE = VGE
VCE = 650 V, VGE=0 V
3.2
4
4.8
40
Zero gate-voltage collector
current
Tvj = 25 °C
µA
mA
nA
Tvj = 175 °C
0.5
Gate-emitter leakage
current
IGES
VCE=0 V, VGE = 20 V
IC = 70 A, VCE = 20 V
100
Transconductance
Input capacitance
Output capacitance
gfs
Cies
Coes
Cres
155
5320
52
S
VCE = 25 V, VGE=0 V, f = 100 kHz
VCE = 25 V, VGE=0 V, f = 100 kHz
VCE = 25 V, VGE=0 V, f = 100 kHz
pF
pF
pF
Reverse transfer
capacitance
22
Gate charge
QG
IC = 70 A, VGE = 15 V, VCC = 520 V
218
42
nC
ns
Turn-on delay time
td(on)
VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C,
RG(on) = 15 Ω,
IC = 70 A
RG(off) = 15 Ω, L = 30 nH,
σ
Tvj = 175 °C,
IC = 70 A
39
31
C = 20 pF
σ
Rise time (inductive load)
Turn-off delay time
tr
td(off)
tf
VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C,
ns
ns
RG(on) = 15 Ω,
IC = 70 A
RG(off) = 15 Ω, L = 30 nH,
σ
Tvj = 175 °C,
IC = 70 A
33
C = 20 pF
σ
VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C,
378
423
26
RG(on) = 15 Ω,
IC = 70 A
RG(off) = 15 Ω, L = 30 nH,
σ
Tvj = 175 °C,
IC = 70 A
C = 20 pF
σ
Fall time (inductive load)
VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C,
ns
RG(on) = 15 Ω,
IC = 70 A
RG(off) = 15 Ω, L = 30 nH,
σ
Tvj = 175 °C,
IC = 70 A
20
C = 20 pF
σ
Turn-on energy
Eon
VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C,
2.2
2.35
mJ
RG(on) = 15 Ω,
IC = 70 A
RG(off) = 15 Ω, L = 30 nH,
σ
Tvj = 175 °C,
IC = 70 A
C = 20 pF
σ
(table continues...)
Datasheet
4
Revision 1.10
2022-12-06
IKWH70N65WR6
™
TRENCHSTOP 5 WR6 technology in enhanced creepage and clearance package
3 Diode
Table 3
(continued) Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
Unit
Min.
Max.
Turn-off energy
Eoff
Ets
Tvj
VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C,
1.07
mJ
RG(on) = 15 Ω,
IC = 70 A
RG(off) = 15 Ω, L = 30 nH,
σ
Tvj = 175 °C,
IC = 70 A
1.48
3.26
3.83
C = 20 pF
σ
Total switching energy
VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C,
mJ
°C
RG(on) = 15 Ω,
IC = 70 A
RG(off) = 15 Ω, L = 30 nH,
σ
Tvj = 175 °C,
IC = 70 A
C = 20 pF
σ
Operating junction
temperature
-40
175
Note:
Electrical Characteristic, at Tvj = 25 °C, unless otherwise specified.
3
Diode
Table 4
Maximum rated values
Parameter
Symbol Note or test condition
Values
Unit
Repetitive peak reverse
voltage
VRRM
Tvj ≥ 25 °C
650
V
Diode forward current,
limited by Tvjmax
IF
Tc = 25 °C
37
22
70
A
A
Tc = 100 °C
Diode pulsed current, tp
limited by Tvjmax
IFpulse
Table 5
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
1.3
Unit
V
Min.
Max.
Diode forward voltage
VF
IF = 21.5 A
VR = 400 V
Tvj = 25 °C
1.6
Tvj = 175 °C
1.35
98
Diode reverse recovery
time
trr
Tvj = 25 °C,
IF = 35 A,
-diF/dt = 1870 A/µs
ns
Tvj = 175 °C,
120
IF = 35 A,
-diF/dt = 1800 A/µs
(table continues...)
Datasheet
5
Revision 1.10
2022-12-06
IKWH70N65WR6
™
TRENCHSTOP 5 WR6 technology in enhanced creepage and clearance package
3 Diode
Table 5
(continued) Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
2.8
Unit
Min.
Max.
Diode reverse recovery
charge
Qrr
VR = 400 V
Tvj = 25 °C,
µC
IF = 35 A,
-diF/dt = 1870 A/µs
Tvj = 175 °C,
4.5
40.3
59
IF = 35 A,
-diF/dt = 1800 A/µs
Diode peak reverse
recovery current
Irrm
VR = 400 V
Tvj = 25 °C,
IF = 35 A,
-diF/dt = 1870 A/µs
A
A/µs
°C
Tvj = 175 °C,
IF = 35 A,
-diF/dt = 1800 A/µs
Diode peak rate of fall of
reverse recovery current
dirr/dt VR = 400 V
Tvj = 25 °C,
700
866
IF = 35 A,
-diF/dt = 1870 A/µs
Tvj = 175 °C,
IF = 35 A,
-diF/dt = 1800 A/µs
Operating junction
temperature
Tvj
-40
175
Note:
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of
the maximum ratings stated in this datasheet.
Datasheet
6
Revision 1.10
2022-12-06
IKWH70N65WR6
™
TRENCHSTOP 5 WR6 technology in enhanced creepage and clearance package
4 Characteristics diagrams
4
Characteristics diagrams
Reverse bias safe operating area
IC = f(VCE
Power dissipation as a function of case temperature
Ptot = f(Tc)
)
Tvj ≤ 175 °C, Tc = 25 °C, VGE = 15 V
Tvj ≤ 175 °C
300
250
200
150
100
50
100
10
1
0
1
10
100
1000
25
50
75
100
125
150
175
Collector current as a function of case temperature
IC = f(Tc)
Typical output characteristic
IC = f(VCE
)
VGE ≥ 15 V, Tvj ≤ 175 °C
Tvj = 25 °C
140
120
100
80
250
200
150
100
50
60
40
20
0
0
25
50
75
100
125
150
175
0
1
2
3
4
5
Datasheet
7
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IKWH70N65WR6
™
TRENCHSTOP 5 WR6 technology in enhanced creepage and clearance package
4 Characteristics diagrams
Typical output characteristic
IC = f(VCE
Typical transfer characteristic
IC = f(VGE
)
)
Tvj = 175 °C
VCE = 20 V
250
200
180
160
140
120
100
80
200
150
100
50
60
40
20
0
0
0
1
2
3
4
5
3
4
5
6
7
8
Typical collector-emitter saturation voltage as a
function of junction temperature
Gate-emitter threshold voltage as a function of
junction temperature
VCEsat = f(Tvj)
VGEth = f(Tvj)
VGE = 15 V
IC = 0.7 mA
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
6
5
4
3
2
1
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
Datasheet
8
Revision 1.10
2022-12-06
IKWH70N65WR6
™
TRENCHSTOP 5 WR6 technology in enhanced creepage and clearance package
4 Characteristics diagrams
Typical switching times as a function of collector
current
t = f(IC)
Typical switching times as a function of gate resistor
t = f(RG)
IC = 70 A, VCC = 400 V, Tvj = 175 °C, VGE = 0/15 V
VCC = 400 V, Tvj = 175 °C, VGE = 0/15 V, RG = 15 Ω
1000
100
10
1000
100
10
1
1
0
30
60
90
120
150
180
210
9
18
27
36
45
54
63
72
81
Typical switching times as a function of junction
temperature
Typical switching energy losses as a function of
collector current
t = f(Tvj)
E = f(IC)
IC = 70 A, VCC = 400 V, VGE = 0/15 V, RG = 15 Ω
VCC = 400 V, Tvj = 175 °C, VGE = 0/15 V, RG = 15 Ω
1000
100
10
18
16
14
12
10
8
6
4
2
1
0
25
50
75
100
125
150
175
0
30
60
90
120
150
180
210
Datasheet
9
Revision 1.10
2022-12-06
IKWH70N65WR6
™
TRENCHSTOP 5 WR6 technology in enhanced creepage and clearance package
4 Characteristics diagrams
Typical switching energy losses as a function of gate
resistor
E = f(RG)
Typical switching energy losses as a function of
junction temperature
E = f(Tvj)
IC = 70 A, VCC = 400 V, Tvj = 175 °C, VGE = 0/15 V
IC = 70 A, VCC = 400 V, VGE = 0/15 V, RG = 15 Ω
10
9
8
7
6
5
4
3
2
1
0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
175
9
18
27
36
45
54
63
72
81
Typical switching energy losses as a function of
collector emitter voltage
Typical gate charge
VGE = f(QG)
IC = 70 A
E = f(VCE
)
IC = 70 A, Tvj = 175 °C, VGE = 0/15 V, RG = 15 Ω
6
16
14
12
10
8
5
4
3
2
1
0
6
4
2
0
200
250
300
350
400
450
500
0
50
100
150
200
250
Datasheet
10
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2022-12-06
IKWH70N65WR6
™
TRENCHSTOP 5 WR6 technology in enhanced creepage and clearance package
4 Characteristics diagrams
Typical capacitance as a function of collector-emitter IGBT transient thermal impedance as a function of
voltage
C = f(VCE
f = 100 kHz, VGE = 0 V
pulse width
Zth(j-c) = f(tp)
D = tp/T
)
1
10000
1000
100
10
0.1
0.01
0.001
1
1E-6
1E-5
0.0001 0.001
0.01
0.1
1
0
5
10
15
20
25
30
Diode transient thermal impedance as a function of
pulse width
Typical diode forward current as a function of forward
voltage
Zth(j-c) = f(tp)
IF = f(VF)
D = tp/T
10
1
300
250
200
150
100
50
0.1
0.01
0.001
0
1E-7 1E-6 1E-5 0.0001 0.001 0.01
0.1
1
0
1
2
3
4
5
Datasheet
11
Revision 1.10
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IKWH70N65WR6
™
TRENCHSTOP 5 WR6 technology in enhanced creepage and clearance package
4 Characteristics diagrams
Typical diode forward voltage as a function of
junction temperature
VF = f(Tvj)
Typical reverse recovery time as a function of diode
current slope
trr = f(diF/dt)
VR = 400 V, IF = 35 A
2.5
250
200
150
100
50
2.0
1.5
1.0
0.5
0.0
0
0
25
50
75
100
125
150
175
500
1000
1500
2000
2500
Typical reverse recovery charge as a function of diode Typical reverse recovery current as a function of
current slope
Qrr = f(diF/dt)
diode current slope
Irrm = f(diF/dt)
VR = 400 V, IF = 35 A
VR = 400 V, IF = 35 A
6
5
4
3
2
1
0
80
70
60
50
40
30
20
10
0
500
1000
1500
2000
2500
500
1000
1500
2000
2500
Datasheet
12
Revision 1.10
2022-12-06
IKWH70N65WR6
™
TRENCHSTOP 5 WR6 technology in enhanced creepage and clearance package
4 Characteristics diagrams
Typical diode peak rate of fall of reverse recovery
current as a function of diode current slope
dirr/dt = f(diF/dt)
Typical reverse energy losses as a function of diode
current slope
Erec = f(diF/dt)
VR = 400 V, IF = 35 A
VR = 400 V, IF = 35 A
0
1.75
1.50
1.25
1.00
0.75
0.50
0.25
-200
-400
-600
-800
-1000
-1200
0.00
500
500
1000
1500
2000
2500
1000
1500
2000
2500
Typical diode current slope as a function of gate
resistor
diF/dt = f(RG)
VR = 400 V, IF = 35 A
2500
2250
2000
1750
1500
1250
1000
750
500
9
18
27
36
45
54
63
72
81
Datasheet
13
Revision 1.10
2022-12-06
IKWH70N65WR6
™
TRENCHSTOP 5 WR6 technology in enhanced creepage and clearance package
5 Package outlines
5
Package outlines
PG-TO247-3-STD-NN4.8
PACKAGE - GROUP
NUMBER:
PG-TO247-3-U04
MILLIMETERS
MIN.
DIMENSIONS
MAX.
5.10
2.51
2.10
1.26
1.90
2.30
1.65
2.06
0.66
21.10
16.85
1.35
0.65
15.90
13.50
2.34
A
A1
A2
b
4.90
2.31
1.90
1.16
b1
b2
b3
b4
c
1.55
1.96
0.59
D
20.90
16.25
1.05
D1
D2
D3
E
0.55
15.70
13.10
2.14
E1
E2
e
5.44
3
N
L
19.80
3.95
20.10
4.30
L1
Figure 1
Datasheet
14
Revision 1.10
2022-12-06
IKWH70N65WR6
™
TRENCHSTOP 5 WR6 technology in enhanced creepage and clearance package
6 Testing conditions
6
Testing conditions
VGE(t)
I,V
90% VGE
trr = ta + tb
dIF/dt
Qrr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
parasitic capacitor C ,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t2
t4
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCC
t1
t3
t
t1
t2
t3
t4
Figure B.
Figure 2
Datasheet
15
Revision 1.10
2022-12-06
IKWH70N65WR6
™
TRENCHSTOP 5 WR6 technology in enhanced creepage and clearance package
Revision history
Revision history
Document revision
Date of release Description of changes
1.00
1.10
2021-05-21
2022-12-06
Final datasheet
Update of “DC collector current, limited by Tvjmax” in table “Maximum
rated values”, for 25°C and 100°C
Transient gate-emitter voltage VGE in table “Maximum rated values” of
IGBT changed to 30V
Update of diagram “Collector current as a function of case temperature”,
IC = f(Tc)
Update of diagram "Typical gate charge", VGE = f(QGE
)
"Forward bias safe operating area” diagram renamed to “Reverse bias
safe operating area”
Correction of package outline dimensions
Change package name to marketing name
Editorial changes
Datasheet
16
Revision 1.10
2022-12-06
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2022-12-06
Published by
Infineon Technologies AG
81726 Munich, Germany
Important notice
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents
of the Automotive Electronics Council.
The information given in this document shall in no
event be regarded as a guarantee of conditions or
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IFX-ABA922-002
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相关型号：
IKY40N120CH3XKSA1
Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, TO-247,
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