IKW75N60H3 [INFINEON]
IGBT HighSpeed 3;
| 型号： | IKW75N60H3 |
| 厂家： | 
Infineon |
| 描述： | IGBT HighSpeed 3 双极性晶体管 |
| 文件： | 总16页 (文件大小：1671K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT
High speed DuoPack: IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel diode
IKW75N60H3
600V high speed switching series third generation
Data sheet
Industrial & Multimarket
IKW75N60H3
High speed switching series third generation
High speed IGBT in Trench and Fieldstop technology
C
Features:
TRENCHSTOPTM technology offering
• very low VCEsat
• low EMI
• maximum junction temperature 175°C
• qualified according to JEDEC for target applications
• Pb-free lead plating, halogen-free mould compound, RoHS
compliant
G
• complete product spectrum and PSpice Models:
http://www.infineon.com/igbt/
Applications:
• uninterruptible power supplies
• welding converters
• converters with high switching frequency
Package pin definition:
1
2
• Pin 1 - gate
3
• Pin 2 & backside - collector
• Pin 3 - emitter
Key Performance and Package Parameters
Type
V†Š
I†
V†ŠÙÈÚ, TÝÎ=25°C TÝÎÑÈà
1.85V 175°C
Marking
Package
IKW75N60H3
600V
75A
K75H603
PG-TO247-3
Rev. 1.2, 2011-12-13
2
IKW75N60H3
High speed switching series third generation
Table of Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1. 4
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1. 6
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Rev. 1.2, 2011-12-13
3
IKW75N60H3
High speed switching series third generation
Maximum ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V†Š
600
V
DC collector current, limited by TÝÎÑÈà1)
T† = 25°C
T† = 100°C
I†
80.0
75.0
A
Pulsed collector current, tÔ limited by TÝÎÑÈà
I†ÔÛÐÙ
-
225.0
225.0
A
A
Turn off safe operating area V†Š ù 600V, TÝÎ ù 175°C
Diode forward current, limited by TÝÎÑÈà
T† = 25°C
T† = 100°C
IŒ
80.0
50.0
A
Diode pulsed current, tÔ limited by TÝÎÑÈà
Gate-emitter voltage
IŒÔÛÐÙ
V•Š
150.0
±20
A
V
Short circuit withstand time
V•Š = 15.0V, V†† ù 400V
Allowed number of short circuits < 1000
Time between short circuits: ú 1.0s
TÝÎ = 150°C
tȠ
µs
5
Power dissipation T† = 25°C
Operating junction temperature
Storage temperature
PÚÓÚ
TÝÎ
428.0
W
°C
°C
-40...+175
-55...+150
TÙÚÃ
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
°C
260
0.6
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
Nm
Thermal Resistance
Parameter
Symbol Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction - case
RÚÌñÎ-Êò
RÚÌñÎ-Êò
RÚÌñÎ-Èò
0.35
0.80
40
K/W
K/W
K/W
Diode thermal resistance,
junction - case
Thermal resistance
junction - ambient
1) 80A value limited by bondwire
Rev. 1.2, 2011-12-13
4
IKW75N60H3
High speed switching series third generation
Electrical Characteristic, at TÝÎ = 25°C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
min.
typ. max.
Static Characteristic
Collector-emitter breakdown voltage Vñ…çò†Š» V•Š = 0V, I† = 2.00mA
600
-
-
V
V
V•Š = 15.0V, I† = 75.0A
TÝÎ = 25°C
Collector-emitter saturation voltage V†ŠÙÈÚ
TÝÎ = 125°C
-
-
-
1.85 2.30
2.10
2.25
-
-
TÝÎ = 175°C
V•Š = 0V, IŒ = 50.0A
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 175°C
-
-
-
1.65 2.00
-
Diode forward voltage
VŒ
V
V
1.65
1.60
Gate-emitter threshold voltage
V•ŠñÚÌò
I† = 1.20mA, V†Š = V•Š
4.1
5.1
5.7
V†Š = 600V, V•Š = 0V
TÝÎ = 25°C
TÝÎ = 175°C
Zero gate voltage collector current I†Š»
-
-
-
-
40.0 µA
5000.0
Gate-emitter leakage current
Transconductance
I•Š»
gËÙ
V†Š = 0V, V•Š = 20V
V†Š = 20V, I† = 75.0A
-
-
-
100
-
nA
S
41.0
Electrical Characteristic, at TÝÎ = 25°C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
min.
typ. max.
Dynamic Characteristic
Input capacitance
CÍþÙ
-
-
-
4620
240
-
-
-
Output capacitance
CÓþÙ
CØþÙ
V†Š = 25V, V•Š = 0V, f = 1MHz
pF
Reverse transfer capacitance
138
V†† = 480V, I† = 75.0A,
V•Š = 15V
Gate charge
Q•
LŠ
-
-
470.0
13.0
-
-
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
Max. 1000 short circuits
Time between short circuits: ú 1.0s
V•Š = 15.0V, V†† ù 400V,
t»† ù 5µs
TÝÎ = 150°C
I†ñ»†ò
-
-
A
685
Switching Characteristic, Inductive Load, at TÝÎ = 25°C
Value
Parameter
Symbol Conditions
Unit
min.
typ. max.
IGBT Characteristic
Turn-on delay time
Rise time
tÁñÓÒò
tØ
TÝÎ = 25°C,
V†† = 400V, I† = 75.0A,
V•Š = 0.0/15.0V,
r• = 5.2Â, Lÿ = 90nH,
Cÿ = 50pF
Lÿ, Cÿ from Fig. E
Energy losses include “tail” and
diode reverse recovery.
-
-
-
-
-
-
-
31
60
-
-
-
-
-
-
-
ns
ns
Turn-off delay time
Fall time
tÁñÓËËò
tË
265
27
ns
ns
Turn-on energy
Turn-off energy
Total switching energy
EÓÒ
EÓËË
EÚÙ
3.00
1.70
4.70
mJ
mJ
mJ
Rev. 1.2, 2011-12-13
5
IKW75N60H3
High speed switching series third generation
Diode reverse recovery time
Diode reverse recovery charge
tØØ
TÝÎ = 25°C,
-
-
-
190
1.80
19.0
-
-
-
ns
µC
A
Vç = 400V,
IΠ= 50.0A,
diŒ/dt = 800A/µs
QØØ
Diode peak reverse recovery current IØØÑ
Diode peak rate of fall of reverse
recovery current during tÉ
diØØ/dt
-
-110
-
A/µs
Switching Characteristic, Inductive Load, at TÝÎ = 175°C
Value
Parameter
Symbol Conditions
Unit
min.
typ. max.
IGBT Characteristic
Turn-on delay time
Rise time
tÁñÓÒò
tØ
TÝÎ = 175°C,
V†† = 400V, I† = 75.0A,
V•Š = 0.0/15.0V,
r• = 5.2Â, Lÿ = 90nH,
Cÿ = 50pF
Lÿ, Cÿ from Fig. E
Energy losses include “tail” and
diode reverse recovery.
-
-
-
-
-
-
-
30
55
-
-
-
-
-
-
-
ns
ns
Turn-off delay time
Fall time
tÁñÓËËò
tË
305
27
ns
ns
Turn-on energy
Turn-off energy
Total switching energy
EÓÒ
EÓËË
EÚÙ
4.20
2.00
6.20
mJ
mJ
mJ
Diode reverse recovery time
Diode reverse recovery charge
tØØ
TÝÎ = 175°C,
Vç = 400V,
IΠ= 50.0A,
-
-
-
300
4.30
28.0
-
-
-
ns
µC
A
QØØ
diŒ/dt = 800A/µs
Diode peak reverse recovery current IØØÑ
Diode peak rate of fall of reverse
recovery current during tÉ
diØØ/dt
-
-95
-
A/µs
Rev. 1.2, 2011-12-13
6
IKW75N60H3
High speed switching series third generation
90
80
70
60
50
40
30
20
10
0
100
10
1
tÔ=1µs
10µs
50µs
100µs
200µs
500µs
DC
T†=80°
I
I
T†=110°
0.1
1
10
f, SWITCHING FREQUENCY [kHz]
100
1
10
V†Š, COLLECTOR-EMITTER VOLTAGE [V]
100
1000
Figure 1. Collector current as a function of switching
frequency
Figure 2. Forward bias safe operating area
(D=0, T†=25°C, TÎù175°C; V•Š=15V)
(TÎù175°C, D=0.5, V†Š=400V, V•Š=15/0V,
R•=5,2Â)
450
400
350
300
250
200
150
100
50
90
80
70
60
50
40
30
20
10
0
I
P
0
25
50
75
T†, CASE TEMPERATURE [°C]
100
125
150
175
25
50
75
T†, CASE TEMPERATURE [°C]
100
125
150
175
Figure 3. Power dissipation as a function of case
temperature
(TÎù175°C)
Figure 4. Collector current as a function of case
temperature
(V•Šú15V, TÎù175°C)
Rev. 1.2, 2011-12-13
7
IKW75N60H3
High speed switching series third generation
200
175
150
125
100
75
200
175
150
125
100
75
V•Š=20V
17V
15V
13V
11V
9V
V•Š=20V
17V
15V
13V
11V
9V
7V
7V
5V
5V
I
I
50
50
25
25
0
0
0.0
0.5
1.0
V†Š, COLLECTOR-EMITTER VOLTAGE [V]
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.5
1.0
V†Š, COLLECTOR-EMITTER VOLTAGE [V]
1.5
2.0
2.5
3.0
3.5
4.0
Figure 5. Typical output characteristic
(TÎ=25°C)
Figure 6. Typical output characteristic
(TÎ=175°C)
250
4.0
TÎ=25°C
TÎ=175°C
I†=37.5A
I†=75A
I†=150A
3.5
3.0
2.5
2.0
1.5
1.0
200
150
100
50
I
V
0
5
6
7
V•Š, GATE-EMITTER VOLTAGE [V]
8
9
10
11
12
0
25
50
TÎ, JUNCTION TEMPERATURE [°C]
75
100
125
150
175
Figure 7. Typical transfer characteristic
(V†Š=20V)
Figure 8. Typical collector-emitter saturation voltage
as a function of junction temperature
(V•Š=15V)
Rev. 1.2, 2011-12-13
8
IKW75N60H3
High speed switching series third generation
tÁñÓËËò
tË
tÁñÓÒò
tØ
tÁñÓËËò
tË
tÁñÓÒò
tØ
1000
100
10
100
t
t
10
15
30
45
I†, COLLECTOR CURRENT [A]
60
75
90 105 120 135 150
2
7
12
17
R•, GATE RESISTOR [Â]
22
27
32
Figure 9. Typical switching times as a function of
collector current
Figure 10. Typical switching times as a function of
gate resistor
(ind. load, TÎ=175°C, V†Š=400V,
V•Š=15/0V, R•=5,2Â, test circuit in Fig. E)
(ind. load, TÎ=175°C, V†Š=400V,
V•Š=15/0V, I†=75A, test circuit in Fig. E)
6.0
typ.
min.
max.
5.5
tÁñÓËËò
tË
tÁñÓÒò
tØ
5.0
4.5
4.0
3.5
3.0
2.5
2.0
100
t
V
10
25
50 75
TÎ, JUNCTION TEMPERATURE [°C]
100
125
150
175
0
25
50
75
TÎ, JUNCTION TEMPERATURE [°C]
100
125
150
175
Figure 11. Typical switching times as a function of
junction temperature
Figure 12. Gate-emitter threshold voltage as a
function of junction temperature
(I†=1,2mA)
(ind. load, V†Š=400V, V•Š=15/0V,
I†=75A, R•=5,2Â, test circuit in Fig. E)
Rev. 1.2, 2011-12-13
9
IKW75N60H3
High speed switching series third generation
18
16
14
12
10
8
16
14
12
10
8
EÓËË
EÓÒ
EÚÙ
EÓËË
EÓÒ
EÚÙ
6
6
4
4
E
E
2
2
0
0
10
30
50
I†, COLLECTOR CURRENT [A]
70
90
110
130
150
2
7
12
R•, GATE RESISTOR [Â]
17
22
27
32
Figure 13. Typical switching energy losses as a
function of collector current
(ind. load, TÎ=175°C, V†Š=400V,
V•Š=15/0V, R•=5,2Â, test circuit in Fig.
E)
Figure 14. Typical switching energy losses as a
function of gate resistor
(ind. load, TÎ=175°C, V†Š=400V,
V•Š=15/0V, I†=75A, test circuit in Fig. E)
7
8
EÓËË
EÓÒ
EÚÙ
EÓËË
EÓÒ
EÚÙ
7
6
5
4
3
2
1
6
5
4
3
2
1
E
E
25
50
75
TÎ, JUNCTION TEMPERATURE [°C]
100
125
150
175
200
250
300
V†Š, COLLECTOR-EMITTER VOLTAGE [V]
350
400
450
Figure 15. Typical switching energy losses as a
function of junction temperature
Figure 16. Typical switching energy losses as a
function of collector emitter voltage
(ind. load, TÎ=175°C, V•Š=15/0V, I†=75A,
R•=5,2Â, test circuit in Fig. E)
(ind load, V†Š=400V, V•Š=15/0V, I†=75A,
R•=5,2Â, test circuit in Fig. E)
Rev. 1.2, 2011-12-13
10
IKW75N60H3
High speed switching series third generation
16
14
12
10
8
1E+4
1000
100
120V
480V
CÍÙÙ
CÓÙÙ
CØÙÙ
6
C
4
V
2
0
0
100
200
Q•Š, GATE CHARGE [nC]
300
400
500
0
5
10
15
V†Š, COLLECTOR-EMITTER VOLTAGE [V]
20
25
30
Figure 17. Typical gate charge
(I†=75A)
Figure 18. Typical capacitance as a function of
collector-emitter voltage
(V•Š=0V, f=1MHz)
1300
1200
1100
1000
900
15
12
9
800
700
6
600
500
3
t
400
I
300
0
12
13
14
15
16
17
18
19
V•Š, GATE-EMITTER VOLTAGE [V]
20
10
11
V•Š, GATE-EMITTER VOLTAGE [V]
12
13
14
15
Figure 19. Typical short circuit collector current as a
function of gate-emitter voltage
(V†Šù400V, start atTÎ=25°C)
Figure 20. Short circuit withstand time as a function
of gate-emitter voltage
(V†Šù400V, start at TÎù150°C)
Rev. 1.2, 2011-12-13
11
IKW75N60H3
High speed switching series third generation
1
D=0.5
0.2
D=0.5
0.2
0.1
0.1
0.1
0.1
0.05
0.05
0.02
0.02
0.01
0.01
single pulse
single pulse
0.01
0.01
Z
Z
i:
rÍ[K/W]: 0.029 0.0509 0.0733 0.1968
Í[s]: 1.2E-4 8.2E-4 9.3E-3 0.115504
1
2
3
4
i:
1
2
3
4
5
rÍ[K/W]: 0.07228401 0.1019218 0.1401017 0.2213981 0.2642944
Í[s]: 9.4E-6 1.3E-4 1.5E-3 0.02221235 0.3064102
τ
τ
0.001
0.001
1E-6
1E-5
1E-4
tÔ, PULSE WIDTH [s]
0.001
0.01
0.1
1
1E-7 1E-6 1E-5 1E-4 0.001 0.01
tÔ, PULSE WIDTH [s]
0.1
1
Figure 21. IGBT transient thermal impedance
(D=tÔ/T)
Figure 22. Diode transient thermal impedance as a
function of pulse width
(D=tÔ/T)
600
5
TÎ=25°C, IF = 50A
TÎ=175°C, IF = 50A
TÎ=25°C, IF = 50A
TÎ=175°C, IF = 50A
500
400
300
200
100
0
4
3
2
1
0
t
Q
400 500 600 700 800 900 1000 1100 1200
diŒ/dt, DIODE CURRENT SLOPE [A/µs]
400
500
600
700
800
diŒ/dt, DIODE CURRENT SLOPE [A/µs]
900
1000
Figure 23. Typical reverse recovery time as a
function of diode current slope
(Vç=400V)
Figure 24. Typical reverse recovery charge as a
function of diode current slope
(Vç=400V)
Rev. 1.2, 2011-12-13
12
IKW75N60H3
High speed switching series third generation
35
30
25
20
15
10
0
-40
TÎ=25°C, IF = 50A
TÎ=175°C, IF = 50A
TÎ=25°C, IF = 50A
TÎ=175°C, IF = 50A
I
-80
-120
-160
-200
t
d
/
I
d
I
400
500
600
diŒ/dt, DIODE CURRENT SLOPE [A/µs]
700
800
900
1000
400
500
600
diŒ/dt, DIODE CURRENT SLOPE [A/µs]
700
800
900
1000
Figure 25. Typical reverse recovery current as a
function of diode current slope
(Vç=400V)
Figure 26. Typical diode peak rate of fall of reverse
recovery current as a function of diode
current slope
(Vç=400V)
200
2.5
TÎ=25°C
TÎ=175°C
IŒ=10A
IŒ=25A
IŒ=50A
IŒ=100A
180
160
140
120
100
80
2.0
1.5
1.0
0.5
0.0
60
I
V
40
20
0
0.0
0.5
1.0
VŒ, FORWARD VOLTAGE [V]
1.5
2.0
2.5
3.0
0
25
50
75
TÎ, JUNCTION TEMPERATURE [°C]
100
125
150
175
Figure 27. Typical diode forward current as a
function of forward voltage
Figure 28. Typical diode forward voltage as a
function of junction temperature
Rev. 1.2, 2011-12-13
13
IKW75N60H3
High speed switching series third generation
PG-TO247-3
Rev. 1.2, 2011-12-13
14
IKW75N60H3
High speed switching series third generation
τ
Rev. 1.2, 2011-12-13
15
IKW75N60H3
High speed switching series third generation
Revision History
IKW75N60H3
Revision: 2011-12-13, Rev. 1.2
Previous Revision
Revision Date
Subjects (major changes since last revision)
2011-12-07 Preliminary data sheet
2011-12-13 Preliminary data sheet
1.1
1.2
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all ?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to: erratum@infineon.com
Published by
Infineon Technologies AG
81726 Munich, Germany
81726 München, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With
respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including
without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or
automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies,
if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and
aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems
are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they
fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.2, 2011-12-13
16
相关型号：
IKW75N60T
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
INFINEON
©2020 ICPDF网 联系我们和版权申明