IDV30E60C [INFINEON]
Fast Switching Emitter Controlled Diode; 快速开关发射器控制二极管
| 型号： | IDV30E60C |
| 厂家： | 
Infineon |
| 描述： | Fast Switching Emitter Controlled Diode |
| 文件： | 总11页 (文件大小：1454K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Diode
Fast Switching Emitter Controlled Diode
IDV30E60C
FullPAK with Emitter Controlled Diode
Datasheet
Industrial & Multimarket
IDV30E60C
Emitter Controlled Diode
Fast Switching Emitter Controlled Diode
Features:
A
• Electrically isolated FullPAK for easy assembly
• 600 V Emitter Controlled technology
• Fast recovery
• Soft switching
• Low reverse recovery charge
• Low forward voltage
• Easy paralleling
• Qualified according to JESD-022 for target applications
• Pb-free lead plating; RoHS compliant
• Halogen free (according to IEC 61249-2-21)
• Complete product spectrum and PSpice Models:
http://www.infineon.com/diode/
A
C
Applications:
• Switching diode for PFC applications with operating range up to
30kHz
Key Performance and Package Parameters
Type
VØØÑ
IË
VË, TÝÎ=25°C
1.65V
TÝÎÑÈà
175°C
Marking
Package
IDV30E60C
600V
30A
D30E60C
PG-TO220-2-22 FP
Rev. 2.1 2010-07-26
2
IDV30E60C
Emitter Controlled Diode
Table of Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Rev. 2.1 2010-07-26
3
IDV30E60C
Emitter Controlled Diode
Maximum ratings
Parameter
Symbol
Value
Unit
Repetitive peak reverse voltage
Vçç¢
600
V
Diode forward current, limited by TÝÎÑÈà
T† = 25°C
T† = 100°C
IŒ
21.0
12.0
A
Diode pulsed current, tÔ limited by TÝÎÑÈà
Power dissipation T† = 25°C
Operating junction temperature
Storage temperature
IŒÔÛÐÙ
PÚÓÚ
TÝÎ
90.0
37.0
A
W
°C
°C
-40...+175
-55...+150
TÙÚÃ
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
°C
260
0.6
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
Nm
Thermal Resistance
Parameter
Symbol Conditions
Max. Value
Unit
Characteristic
Diode thermal resistance,1)
junction - case
RÚÌñÎ-Êò
RÚÌñÎ-Èò
4.00
65
K/W
K/W
Thermal resistance
junction - ambient
Electrical Characteristic, at TÝÎ = 25°C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
min.
typ. max.
Static Characteristic
IΠ= 30.0A
TÝÎ = 25°C
TÝÎ = 175°C
Diode forward voltage
VŒ
Iç
-
-
1.65 2.05
1.65
V
Vç = 600V
TÝÎ = 25°C
TÝÎ = 175°C
Reverse leakage current
-
-
-
-
40.0 µA
1000.0
Electrical Characteristic, at TÝÎ = 25°C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
min.
typ. max.
Dynamic Characteristic
Internal emitter inductance
measured 5mm (0.197 in.) from case
LŠ
-
7.0
-
nH
Switching Characteristic, Inductive Load, at TÝÎ = 25°C
Parameter Symbol Conditions
Value
Unit
min.
typ. max.
1) Please be aware that in non standard load conditions, due to high Rth(j-c), Tvj close to Tvjmax can be reached.
Rev. 2.1 2010-07-26
4
IDV30E60C
Emitter Controlled Diode
Diode Characteristic, at TÝÎ = 25°C
Diode reverse recovery time
Diode reverse recovery charge
tØØ
TÝÎ = 25°C,
Vç = 400V,
IΠ= 30.0A,
diŒ/dt = 1000A/µs
-
-
-
130
0.88
16.9
-
-
-
ns
µC
A
QØØ
Diode peak reverse recovery current IØØÑ
Diode peak rate of fall of reverse
recovery current during tÉ
diØØ/dt
-
-598
-
A/µs
Switching Characteristic, Inductive Load, at TÝÎ = 175°C
Parameter Symbol Conditions
Value
Unit
min.
typ. max.
Diode Characteristic, at TÝÎ = 175°C
Diode reverse recovery time
Diode reverse recovery charge
tØØ
TÝÎ = 175°C,
Vç = 400V,
IΠ= 30.0A,
-
-
-
217
2.40
22.9
-
-
-
ns
µC
A
QØØ
diŒ/dt = 1000A/µs
Diode peak reverse recovery current IØØÑ
Diode peak rate of fall of reverse
recovery current during tÉ
diØØ/dt
-
-307
-
A/µs
Rev. 2.1 2010-07-26
5
IDV30E60C
Emitter Controlled Diode
40
35
30
25
20
15
10
5
25.0
22.5
20.0
17.5
15.0
12.5
10.0
7.5
I
P
5.0
2.5
0.0
0
25
50
75
TÎ, CASE TEMPERATURE [°C]
100
125
150
175
25
50
75
TÎ, CASE TEMPERATURE [°C]
100
125
150
175
Figure 1. Power dissipation as a function of case
temperature
(TÎù175°C)
Figure 2. Diode forward current as a function of case
temperature
(V•Šú15V, TÎù175°C)
300
TÎ=25°C, IF = 30A
TÎ=175°C, IF = 30A
250
200
150
100
50
1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
0.1
t
Z
i:
rÍ[K/W]: 0.03341414 0.1804287 0.2650073 0.2951119 0.5701318 1.101683 0.4669498
Í[s]: 4.4E-5 3.0E-4 2.9E-3 0.02398838 0.3156884 1.822741 6.37828
1
2
3
4
5
6
7
τ
0.01
0
800
1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1
tÔ, PULSE WIDTH [s]
1
10
900
1000
diŒ/dt, DIODE CURRENT SLOPE [A/µs]
1100
1200
Figure 3. Diode transient thermal impedance as a
function of pulse width
(D=tÔ/T)
Figure 4. Typical reverse recovery time as a function
of diode current slope
(Vç=400V, IŒ=30A, Dynamic test circuit in
Figure E)
Rev. 2.1 2010-07-26
6
IDV30E60C
Emitter Controlled Diode
3.0
2.5
2.0
1.5
1.0
0.5
0.0
30
TÎ=25°C, IF = 30A
TÎ=175°C, IF = 30A
TÎ=25°C, IF = 30A
TÎ=175°C, IF = 30A
26
22
18
14
10
I
Q
800
900
diŒ/dt, DIODE CURRENT SLOPE [A/µs]
1000
1100
1200
800
900
diŒ/dt, DIODE CURRENT SLOPE [A/µs]
1000
1100
1200
Figure 5. Typical reverse recovery charge as a
function of diode current slope
(Vç=400V, IŒ=30A, Dynamic test circuit in
Figure E)
Figure 6. Typical reverse recovery current as a
function of diode current slope
(Vç=400V, IŒ=30A, Dynamic test circuit in
Figure E)
0
90
TÎ=25°C, IF = 30A
TÎ=175°C, IF = 30A
TÎ=25°C
TÎ=175°C
80
-100
-200
-300
-400
-500
-600
-700
70
60
50
40
30
20
10
0
I
t
I
d
/
I
d
800
900
diŒ/dt, DIODE CURRENT SLOPE [A/µs]
1000
1100
1200
0.0
0.5
1.0
VŒ, FORWARD VOLTAGE [V]
1.5
2.0
2.5
Figure 7. Typical diode peak rate of fall of reverse
recovery current as a function of diode
current slope
Figure 8. Typical diode forward current as a function
of forward voltage
(Vç=400V, IŒ=30A, Dynamic test circuit in
Figure E)
Rev. 2.1 2010-07-26
7
IDV30E60C
Emitter Controlled Diode
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
IŒ=15A
IŒ=30A
IŒ=60A
V
0
25 125
TÎ, JUNCTION TEMPERATURE [°C]
50
75
100
150
175
Figure 9. Typical diode forward voltage as a function
of junction temperature
Rev. 2.1 2010-07-26
8
IDV30E60C
Emitter Controlled Diode
Rev. 2.1 2010-07-26
9
IDV30E60C
Emitter Controlled Diode
Rev. 2.1 2010-07-26
10
IDV30E60C
Emitter Controlled Diode
Revision History
IDV30E60C
Revision: 2010-07-26, Rev. 2.1
Previous Revision
Revision Date
2.1
Subjects (major changes since last revision)
Release of final datasheet
-
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Published by
Infineon Technologies AG
81726 Munich, Germany
81726 München, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
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respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including
without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support
devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of
that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or
maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other
persons may be endangered.
Rev. 2.1 2010-07-26
11
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