IDV30E65D2XKSA1 [INFINEON]
Rectifier Diode, 1 Phase, 1 Element, 30A, 650V V(RRM), Silicon, TO-220AC,;
| 型号： | IDV30E65D2XKSA1 |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 30A, 650V V(RRM), Silicon, TO-220AC, 软恢复二极管 快速软恢复二极管 局域网 光电二极管 |
| 文件： | 总11页 (文件大小：1741K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Diode
RapidꢀSwitchingꢀEmitterꢀControlledꢀDiode
IDV30E65D2
EmitterꢀControlledꢀDiode
Dataꢀsheet
IndustrialꢀPowerꢀControl
IDV30E65D2
EmitterꢀControlledꢀDiode
RapidꢀSwitchingꢀEmitterꢀControlledꢀDiode
ꢀ
Features:
A
•ꢀQualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀtargetꢀapplications
•ꢀ650ꢀVꢀEmitterꢀControlledꢀtechnology
•ꢀFastꢀrecovery
•ꢀSoftꢀswitching
•ꢀLowꢀreverseꢀrecoveryꢀcharge
•ꢀLowꢀforwardꢀvoltageꢀandꢀstableꢀoverꢀtemperature
•ꢀ175ꢀ°Cꢀjunctionꢀoperatingꢀtemperature
•ꢀEasyꢀparalleling
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
Applications:
•ꢀBoostꢀdiodeꢀinꢀCCMꢀPFC
C
A
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
Vrrm
If
Vf,ꢀTvj=25°C
Tvjmax
Marking
Package
IDV30E65D2
650V
30A
1.6V
175°C
E30ED2
PG-TO220-2-22 FP
2
Rev.ꢀ2.1,ꢀꢀ2014-09-18
IDV30E65D2
EmitterꢀControlledꢀDiode
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3
Rev.ꢀ2.1,ꢀꢀ2014-09-18
IDV30E65D2
EmitterꢀControlledꢀDiode
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Repetitiveꢀpeakꢀreverseꢀvoltage,ꢀTvjꢀ≥ꢀ25°C
VRRM
650
V
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
TCꢀ=ꢀ25°C
TCꢀ=ꢀ100°C
IF
30.0
17.5
A
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
IFpuls
IFSM
90.0
A
A
Diode surge non repetitive forward current
TCꢀ=ꢀ25°C,ꢀtpꢀ=ꢀ8.3ms,ꢀsineꢀhalfwave
180.0
47.0
PowerꢀdissipationꢀTCꢀ=ꢀ25°C
Operating junction temperature
Storage temperature
Ptot
Tvj
W
°C
°C
-40...+175
-55...+150
Tstg
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
°C
260
0.6
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
Nm
ThermalꢀResistance
Parameter
Symbol Conditions
Max.ꢀValue
Unit
Characteristic
Diode thermal resistance,1)
junction - case
Rth(j-c)
Rth(j-a)
3.20
65
K/W
K/W
Thermal resistance
junction - ambient
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
IFꢀ=ꢀ30.0A
Diode forward voltage
VF
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
-
-
1.60 2.20
V
1.65
-
VRꢀ=ꢀ650V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Reverse leakage current
IR
-
-
4.0
800.0
40.0 µA
-
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE
-
7.0
-
nH
1) Please be aware that in non standard load conditions, due to high Rth(j-c), Tvj close to Tvjmax can be reached.
4
Rev.ꢀ2.1,ꢀꢀ2014-09-18
IDV30E65D2
EmitterꢀControlledꢀDiode
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Unit
min. typ. max.
Parameter
Symbol Conditions
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
42
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ30.0A,
diF/dtꢀ=ꢀ1000A/µs,
Lσꢀ=ꢀ30nH,
Qrr
0.34
14.7
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-2100
-
A/µs
Cσꢀ=ꢀ40pF,
switch IKW50N65H5
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
70
0.25
5.7
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ30.0A,
diF/dtꢀ=ꢀ300A/µs,
Lσꢀ=ꢀ30nH,
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-700
-
A/µs
Cσꢀ=ꢀ40pF,
switch IKW50N65H5
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C/125°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
56
-
-
-
ns
µC
A
Tvjꢀ=ꢀ175°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ30.0A,
diF/dtꢀ=ꢀ1000A/µs,
Lσꢀ=ꢀ30nH,
Qrr
0.61
18.0
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-2200
-
A/µs
Cσꢀ=ꢀ40pF,
switch IKW50N65H5
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
73
0.38
7.1
-
-
-
ns
µC
A
Tvjꢀ=ꢀ125°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ30.0A,
diF/dtꢀ=ꢀ300A/µs,
Lσꢀ=ꢀ30nH,
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-900
-
A/µs
Cσꢀ=ꢀ40pF,
switch IKW50N65H5
5
Rev.ꢀ2.1,ꢀꢀ2014-09-18
IDV30E65D2
EmitterꢀControlledꢀDiode
50
45
40
35
30
25
20
15
10
5
30
25
20
15
10
5
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 1. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
Figure 2. Diodeꢀforwardꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
temperature
(Tvj≤175°C)
(Tvj≤175°C)
90
Tj=25°C, IF = 30A
Tj=175°C, IF = 30A
80
70
60
50
40
30
20
10
0
1
D=0.5
0.2
0.1
0.05
0.02
0.01
0.1
single pulse
i:
1
2
3
4
5
6
7
ri[K/W]: 0.0761259 0.229125 0.343335 0.39198
0.939201 1.70751 0.1387158
0.0248532 0.3577623 2.430114 28.15315
τi[s]:
5.2E-5
2.8E-4
3.0E-3
0.01
1E-6 1E-5 1E-4 0.001 0.01
0.1
1
10
0
500
1000
1500
2000
2500
3000
tp,ꢀPULSEꢀWIDTHꢀ[s]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 3. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
functionꢀofꢀpulseꢀwidth
Figure 4. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunctionꢀof
diodeꢀcurrentꢀslope
(D=tp/T)
(VR=400V)
6
Rev.ꢀ2.1,ꢀꢀ2014-09-18
IDV30E65D2
EmitterꢀControlledꢀDiode
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
30
Tj=25°C, IF = 30A
Tj=175°C, IF = 30A
Tj=25°C, IF = 30A
Tj=175°C, IF = 30A
25
20
15
10
5
0
0
500
1000
1500
2000
2500
3000
0
500
1000
1500
2000
2500
3000
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 5. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀaꢀfunction Figure 6. Typicalꢀpeakꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
ofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
(VR=400V)
0
-500
60
50
40
30
20
10
0
Tj=25°C, IF = 30A
Tj=175°C, IF = 30A
Tj=25°C
Tj=175°C
-1000
-1500
-2000
-2500
-3000
-3500
0
500
1000
1500
2000
2500
3000
0.0
0.5
1.0
1.5
2.0
2.5
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]
Figure 7. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
Figure 8. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunctionꢀof
forwardꢀvoltage
(VR=400V)
7
Rev.ꢀ2.1,ꢀꢀ2014-09-18
IDV30E65D2
EmitterꢀControlledꢀDiode
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
IF=15A
IF=30A
IF=60A
0
25
50
75
100
125
150
175
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunctionꢀof
junctionꢀtemperature
8
Rev.ꢀ2.1,ꢀꢀ2014-09-18
IDV30E65D2
EmitterꢀControlledꢀDiode
9
Rev.ꢀ2.1,ꢀꢀ2014-09-18
IDV30E65D2
EmitterꢀControlledꢀDiode
vGE(t)
90% VGE
a
b
a
b
10% VGE
t
iC(t)
90% IC
10% IC
90% IC
10% IC
t
vCE(t)
t
t
td(off)
tf
td(on)
tr
vGE(t)
90% VGE
10% VGE
t
iC(t)
CC
2% IC
t
vCE(t)
t2
t4
E
=
VCE x IC x dt
E
=
on
VCE x IC x dt
off
∫
∫
2% VCE
t1
t3
t
t1
t2
t3
t4
10
Rev.ꢀ2.1,ꢀꢀ2014-09-18
IDV30E65D2
Emitter Controlled Diode
Revision History
IDV30E65D2
Revision: 2014-09-18, Rev. 2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.1 2014-09-18 Final data sheet
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Published by
Infineon Technologies AG
81726 Munich, Germany
81726 München, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon
Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support,
automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
11
Rev. 2.1, 2014-09-18
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