IDB18E120ATMA1 [INFINEON]
Rectifier Diode, 1 Phase, 1 Element, 31A, 1200V V(RRM), Silicon, PLASTIC, TO-220SMD, 3 PIN;
| 型号： | IDB18E120ATMA1 |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 31A, 1200V V(RRM), Silicon, PLASTIC, TO-220SMD, 3 PIN 快速恢复二极管 |
| 文件： | 总8页 (文件大小：362K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IDB18E120
Fast Switching Emitter Controlled Diode
Product Summary
Feature
V
RRM
1200
18
V
A
• 1200 V Emitter Controlled technology
• Fast recovery
I
F
V
T
1.65
150
V
F
• Soft switching
°C
jmax
• Low reverse recovery charge
• Low forward voltage
• Easy paralleling
PG-TO263-3-2
2
1
* RoHS compliant
3
Type
Package
Ordering Code Marking Pin 1 PIN 2 PIN 3
IDB18E120
PG-TO263-3-2
-
D18E120 NC
C
A
Maximum Ratings, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Value
Unit
V
Repetitive peak reverse voltage
Continous forward current
V
1200
RRM
I
A
F
T =25°C
31
C
T =90°C
19.8
C
Surge non repetitive forward current
I
I
78
FSM
FRM
T =25°C, t =10 ms, sine halfwave
C
p
Maximum repetitive forward current
47
T =25°C, t limited by T
, D=0.5
C
p
jmax
W
Power dissipation
P
tot
T =25°C
113
54
C
T =90°C
C
-55...+150
°C
°C
Operating and storage temperature
T , T
j stg
Soldering temperature
T
260
S
reflow soldering, MSL1
Page 1
Rev.2.3
2013-07-02
IDB18E120
Thermal Characteristics
Parameter
Symbol
Values
typ. max.
Unit
min.
Characteristics
-
-
-
-
1.1
62
K/W
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
R
R
R
thJC
thJA
thJA
-
-
-
62
-
2
1)
@ 6 cm cooling area
35
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
Unit
µA
V
min.
typ. max.
Static Characteristics
Reverse leakage current
I
R
V =1200V, T =25°C
-
-
-
-
100
R
j
V =1200V, T =150°C
1400
R
j
Forward voltage drop
V
F
I =18A, T =25°C
-
-
1.65
1.7
2.15
-
F
j
I =18A, T =150°C
F
j
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
Rev.2.3
2013-07-02
IDB18E120
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
typ. max.
Unit
min.
Dynamic Characteristics
ns
A
Reverse recovery time
t
I
rr
V =800V, I =18A, di /dt=800A/µs, T =25°C
-
-
-
195
280
300
-
-
-
R
F
F
j
V =800V, I =18A, di /dt=800A/µs, T =125°C
R
F
F
j
V =800V, I =18A, di /dt=800A/µs, T =150°C
R
F
F
j
Peak reverse current
rrm
V =800V, I = 18 A, di /dt=800A/µs, T =25°C
-
-
-
20.2
24.4
25.3
-
-
-
R
F
F
j
V =800V, I =18A, di /dt=800A/µs, T =125°C
R
F
F
j
V =800V, I =18A, di /dt=800A/µs, T =150°C
R
F
F
j
nC
Reverse recovery charge
Q
S
rr
V =800V, I =18A, di /dt=800A/µs, T =25°C
-
-
-
1880
3200
3540
-
-
-
R
F
F
j
V =800V, I =18A, di /dt=800A/µs, T =125°C
R
F
F
j
V =800V, I =18A, di /dt=800A/µs, T =150°C
R
F
F
j
Reverse recovery softness factor
V =800V, I =18A, di /dt=800A/µs, T =25°C
-
-
-
5.5
6.6
6.7
-
-
-
R
F
F
j
V =800V, I =18A, di /dt=800A/µs, T =125°C
R
F
F
j
V =800V, I =18A, di /dt=800A/µs, T =150°C
R
F
F
j
Page 3
Rev.2.3
2013-07-02
IDB18E120
1 Power dissipation
= f (T )
2 Diode forward current
I = f(T )
P
tot
C
F
C
parameter: T ≤ 150°C
parameter: T ≤ 150°C
j
j
35
120
W
A
100
90
80
70
60
50
40
30
20
10
0
25
20
15
10
5
0
25
50
75
100
150
25
50
75
100
150
°C
°C
T
T
C
C
3 Typ. diode forward current
I = f (V )
4 Typ. diode forward voltage
V = f (T )
F
F
F
j
54
2.6
A
V
36A
-55°C
25°C
42
36
30
24
18
12
6
100°C
150°C
2.2
2
18A
1.8
1.6
1.4
1.2
9A
0
0
0.5
1
1.5
2
3
-60
-20
20
60
100
160
V
°C
V
T
j
F
Page 4
Rev.2.3
2013-07-02
IDB18E120
5 Typ. reverse recovery time
t = f (di /dt)
6 Typ. reverse recovery charge
Q =f(di /dt)
rr
F
rr
F
parameter: V = 800V, T = 125°C
parameter: V = 800V, T = 125 °C
R j
R
j
1000
4600
nC
ns
36A
18A
4200
4000
3800
3600
3400
3200
3000
2800
2600
2400
2200
2000
1800
800
700
600
500
400
300
200
100
36A
18A
9A
9A
200 300 400 500 600 700 800
1000
200 300 400 500 600 700 800
1000
A/µs
di /dt
A/µs
di /dt
F
F
7 Typ. reverse recovery current
8 Typ. reverse recovery softness factor
S = f(di /dt)
I = f (di /dt)
rr
F
F
parameter: V = 800V, T = 125°C
parameter: V = 800V, T = 125°C
R j
R
j
30
18
A
36A
18A
9A
14
12
10
8
36A
18A
9A
20
15
10
5
6
4
2
200 300 400 500 600 700 800
1000
200 300 400 500 600 700 800
1000
A/µs
di /dt
A/µs
di /dt
F
F
Page 5
Rev.2.3
2013-07-02
IDB18E120
9 Max. transient thermal impedance
= f (t )
Z
thJC
p
parameter : D = t /T
p
IDP18E120
10 1
K/W
10 0
10 -1
10 -2
10 -3
D = 0.50
0.20
0.10
0.05
single pulse
0.02
10 -4
0.01
10 -5
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
s
t
p
Page 6
Rev.2.3
2013-07-02
IDB18E120
Page 7
Rev.2.3
2013-07-02
IDB18E120
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types
in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted in the
human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be endangered.
Page 8
Rev.2.3
2013-07-02
相关型号：
IDB30E120ATMA1
Rectifier Diode, 1 Phase, 1 Element, 50A, 1200V V(RRM), Silicon, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
INFINEON
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