IDB30E120_07 [INFINEON]
Fast Switching EmCon Diode; 快速开关EMCON二极管
| 型号： | IDB30E120_07 |
| 厂家： | 
Infineon |
| 描述： | Fast Switching EmCon Diode |
| 文件： | 总8页 (文件大小：207K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IDB30E120
Fast Switching EmCon Diode
Product Summary
Feature
V
1200
30
V
A
RRM
• 1200 V EmCon technology
• Fast recovery
I
F
V
T
1.65
150
V
F
• Soft switching
°C
jmax
• Low reverse recovery charge
• Low forward voltage
• Easy paralleling
PG-TO263-3-2
2
1
* RoHS compliant
3
Type
Package
Ordering Code Marking Pin 1 PIN 2 PIN 3
IDB30E120
PG-TO263-3-2
-
D30E120 NC
C
A
Maximum Ratings, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Value
Unit
V
Repetitive peak reverse voltage
Continous forward current
V
1200
RRM
I
A
F
T =25°C
50
30
C
T =90°C
C
Surge non repetitive forward current
I
I
102
FSM
FRM
T =25°C, t =10 ms, sine halfwave
C
p
Maximum repetitive forward current
76.5
T =25°C, t limited by T
, D=0.5
C
p
jmax
W
Power dissipation
P
tot
T =25°C
138
66
C
T =90°C
C
-55...+150
°C
°C
Operating and storage temperature
T , T
j stg
Soldering temperature
T
245
S
reflow soldering, MSL1
Page 1
Rev.2.2
2007-09-01
IDB30E120
Thermal Characteristics
Parameter
Symbol
Values
typ. max.
Unit
min.
Characteristics
-
-
-
-
0.9
62
K/W
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
R
R
R
thJC
thJA
thJA
-
-
-
62
-
2
1)
@ 6 cm cooling area
35
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
Unit
µA
V
min.
typ. max.
Static Characteristics
Reverse leakage current
I
R
V =1200V, T =25°C
-
-
-
-
100
R
j
V =1200V, T =150°C
2500
R
j
Forward voltage drop
V
F
I =30A, T =25°C
-
-
1.65
1.7
2.15
-
F
j
I =30A, T =150°C
F
j
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
Rev.2.2
2007-09-01
IDB30E120
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
typ. max.
Unit
min.
Dynamic Characteristics
ns
A
Reverse recovery time
t
I
rr
V =800V, I =30A, di /dt=850A/µs, T =25°C
-
-
-
243
355
380
-
-
-
R
F
F
j
V =800V, I =30A, di /dt=850A/µs, T =125°C
R
F
F
j
V =800V, I =30A, di /dt=850A/µs, T =150°C
R
F
F
j
Peak reverse current
rrm
V =800V, I = 30 A, di /dt=850A/µs, T =25°C
-
-
-
23.7
28.3
29.5
-
-
-
R
F
F
j
V =800V, I =30A, di /dt=850A/µs, T =125°C
R
F
F
j
V =800V, I =30A, di /dt=850A/µs, T =150°C
R
F
F
j
nC
Reverse recovery charge
Q
S
rr
V =800V, I =30A, di /dt=850A/µs, T =25°C
-
-
-
2630
4700
5200
-
-
-
R
F
F
j
V =800V, I =30A, di /dt=850A/µs, T =125°C
R
F
F
j
V =800V, I =30A, di /dt=850A/µs, T =150°C
R
F
F
j
Reverse recovery softness factor
V =800V, I =30A, di /dt=850A/µs, T =25°C
-
-
-
6
-
-
-
R
F
F
j
V =800V, I =30A, di /dt=850A/µs, T =125°C
7.4
7.5
R
F
F
j
V =800V, I =30A, di /dt=850A/µs, T =150°C
R
F
F
j
Page 3
Rev.2.2
2007-09-01
IDB30E120
1 Power dissipation
= f (T )
2 Diode forward current
I = f(T )
P
tot
C
F
C
parameter: T ≤ 150°C
parameter: T ≤ 150°C
j
j
55
140
W
A
120
110
100
90
80
70
60
50
40
30
20
10
0
45
40
35
30
25
20
15
10
5
0
25
50
75
100
150
25
50
75
100
150
°C
°C
T
T
C
C
3 Typ. diode forward current
I = f (V )
4 Typ. diode forward voltage
V = f (T )
F
F
F
j
90
2.4
A
60A
V
-55°C
25°C
100°C
150°C
70
60
50
40
30
20
10
0
2
1.8
1.6
1.4
1.2
30A
15A
0
0.5
1
1.5
2
3
-60
-20
20
60
100
160
V
°C
T
V
F
j
Page 4
Rev.2.2
2007-09-01
IDB30E120
5 Typ. reverse recovery time
t = f (di /dt)
6 Typ. reverse recovery charge
Q =f(di /dt)
rr
F
rr
F
parameter: V = 800V, T = 125°C
parameter: V = 800V, T = 125 °C
R
j
R
j
1100
6500
ns
nC
60A
900
800
700
600
500
400
300
200
5500
5000
4500
4000
3500
3000
2500
60A
30A
15A
30A
15A
200 300 400 500 600 700 800
1000
200 300 400 500 600 700 800
1000
A/µs
A/µs
di /dt
di /dt
F
F
7 Typ. reverse recovery current
8 Typ. reverse recovery softness factor
S = f(di /dt)
I = f (di /dt)
rr
F
F
parameter: V = 800V, T = 125°C
parameter: V = 800V, T = 125°C
R j
R
j
18
35
A
60A
30A
15A
14
12
10
8
25
20
15
10
5
60A
30A
15A
6
4
200 300 400 500 600 700 800
1000
200 300 400 500 600 700 800
1000
A/µs
di /dt
A/µs
di /dt
F
F
Page 5
Rev.2.2
2007-09-01
IDB30E120
9 Max. transient thermal impedance
= f (t )
Z
thJC
p
parameter : D = t /T
p
10 1
IDP30E120
K/W
10 0
10 -1
D = 0.50
0.20
10 -2
0.10
0.05
0.02
10 -3
0.01
single pulse
10 -4
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
s
t
p
Page 6
Rev.2.2
2007-09-01
IDB30E120
Page 7
Rev.2.2
2007-09-01
IDB30E120
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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regarding circuits, descriptions and charts stated herein.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
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Page 8
Rev.2.2
2007-09-01
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