IDB10S60C [INFINEON]
2nd Generation thinQ SiC Schottky Diode; 第二代的thinQ SiC肖特基二极管
| 型号： | IDB10S60C |
| 厂家： | 
Infineon |
| 描述： | 2nd Generation thinQ SiC Schottky Diode |
| 文件： | 总7页 (文件大小：305K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IDB10S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features
Product Summary
V DC
Q c
I F
600
24
V
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
nC
A
10
• No reverse recovery/ No forward recovery
• No temperature influence on the switching behavior
• High surge current capability
D2PAK
• Pb-free lead plating; RoHs compliant
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 5mA2)
thinQ! 2G Diode designed for fast switching applications like:
• CCM PFC
• Motor Drives
Type
Package
Marking
Pin 2
Pin 3
D2PAK
IDB10S60C
D10S60C
C
A
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I F
T C<135 °C
f =50 Hz
Continuous forward current
RMS forward current
10
15
A
I F,RMS
Surge non-repetitive forward current,
sine halfwave
I F,SM
T C=25 °C, t p=10 ms
76
32
T j=150 °C,
T C=100 °C, D =0.1
I F,RM
Repetitive peak forward current
I F,max
T C=25 °C, t p=10 µs
T C=25 °C, t p=10 ms
Non-repetitive peak forward current
i²t value
350
29
∫i 2dt
A2s
V
V RRM
Repetitive peak reverse voltage
Diode ruggedness dv/dt
Power dissipation
600
VR=0…480V
dv/ dt
P tot
50
V/ns
W
T C=25 °C
83
T j, T stg
Operating and storage temperature
-55 ... 175
°C
Rev. 2.1
page 1
2009-01-07
IDB10S60C
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
-
-
-
-
1.8
62
K/W
SMD version, device
R thJA
on PCB, minimal
Footprint
Thermal resistance,
junction - ambient
SMD version, device
on PCB, 6 cm2 cooling
area3)
-
-
35
-
-
Soldering temperature,
reflowsoldering @ 10sec.
T sold
reflow MSL1
260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V DC
V F
I R=0.14 mA
DC blocking voltage
Diode forward voltage
600
-
-
V
I F=10 A, T j=25 °C
I F=10 A, T j=150 °C
-
-
1.5
1.7
1.7
2.1
I R
V R=600 V, T j=25 °C
V R=600 V, T j=150 °C
Reverse current
-
-
1.4
5
140 µA
1400
AC characteristics
V R=400 V, I F≤I F,max
di F/dt =200 A/µs,
T j=150 °C
,
Q c
t c
Total capacitive charge
-
-
-
-
-
24
-
-
nC
Switching time4)
<10 ns
V R=1 V, f =1 MHz
Total capacitance
C
480
60
60
-
-
-
pF
V R=300 V, f =1 MHz
V R=600 V, f =1 MHz
1) J-STD20 and JESD22
2) All devices tested under avalanche conditions, for a time periode of 5ms, at 5mA.
3) Device on 40mm*40mm*1.5mm epox PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertikal with out blown air.
4) tc is the time constant for the capacitive displacement current waveform (independent from Tj, ILOAD and
di/dt), different from trr, which is dependent on Tj, ILOAD, di/dt. No reverse recovery time constant trr due to
absence of minority carrier injection.
5) Only capacative charge occuring, guaranteed by design.
Rev. 2.1
page 2
2009-01-07
IDB10S60C
1 Power dissipation
2 Diode forward current
P
tot=f(T C)
I F=f(T C); T j≤175 °C
100
25
20
15
10
5
80
60
40
20
0
0
25
50
75
100
125
150
175
200
25
50
75
100
125
150
175
T
C [°C]
T
C [°C]
3 Typ. forward characteristic
I F=f(V F); t p=400 µs
parameter: T j
4 Typ. forward characteristic in surge current
mode
I F=f(V F); t p=400 µs; parameter: T j
30
120
-55 °C
100 °C
175°C
100
25 °C
150 °C
20
80
175°C
60
25 °C
10
40
100 °C
150 °C
20
-55 °C
0
0
0
1
2
3
4
0
2
4
6
8
V
F [V]
V
F [V]
Rev. 2.1
page 3
2009-01-07
IDB10S60C
6 Typ. reverse current vs. reverse voltage
5 Typ. forward power dissipation vs.
average forward current
I R=f(V R)
P
F,AV=f(I F), T C=100 °C, parameter: D =t p/T
parameter: T j
102
101
100
10-1
50
0.1
0.5
40
30
20
10
0
1
0.2
175 °C
100 °C
25 °C
150 °C
-55 °C
10-2
10-3
100
200
300
400
500
600
0
5
10
I
15
F(AV) [A]
20
25
V R [V]
7 Transient thermal impedance
thJC=f(t p)
8 Typ. capacitance vs. reverse voltage
Z
C =f(V R); T C=25 °C, f =1 MHz
parameter: D =t p/T
101
600
500
400
300
200
100
0
100
0.5
0.2
0.1
10-1
0.02
0.01
single pulse
10-2
10-5
10-4
10-3
10-2
10-1
100
10-1
100
101
102
103
V
R [V]
t
P [s]
Rev. 2.1
page 4
2009-01-07
IDB10S60C
10 Typ. Capacitive charge vs. current slope
9 Typ. C stored energy
Q C=f(di F/dt )5); T j=150 °C; I F≤I F,max
E C=f(V R)
14
12
10
8
25
20
15
10
5
6
4
2
0
0
100
0
100
200
300
400
500
600
400
700
1000
V
R [V]
di F/dt [A/µs]
Rev. 2.1
page 5
2009-01-07
IDB10S60C
PG-TO220-3-45 (D2PAK): Outline
Dimensions in mm/inches
Rev. 2.1
page 6
2009-01-07
IDB10S60C
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office
(www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.1
page 7
2009-01-07
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