IAUT240N08S5N019 [INFINEON]
车规级MOSFET;
| 型号： | IAUT240N08S5N019 |
| 厂家： | 
Infineon |
| 描述： | 车规级MOSFET |
| 文件： | 总9页 (文件大小：232K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IAUT240N08S5N019
OptiMOS™-5 Power-Transistor
Product Summary
VDS
RDS(on)
ID
80
1.9
240
V
m
A
Features
P/G-HSOF-8-1
• N-channel - Enhancement mode
Tab
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• Ultra low Rds(on)
8
1
8
Tab
1
• 100% Avalanche tested
Type
Package
Marking
P/G-HSOF-8-1
5N08019
IAUT240N08S5N019
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
T C=25°C, VGS=10V1)
I D
Continuous drain current
240
A
T C=100 °C,
173
V
GS=10 V2)
Pulsed drain current2)
I D,pulse
EAS
I AS
T C=25 °C
960
400
240
±20
230
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
I D=120 A
mJ
A
-
VGS
Ptot
-
V
T C=25 °C
Power dissipation
W
°C
T j, T stg
-
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-
-
-55 ... +175
55/175/56
Rev. 1.0
page 1
2017-07-20
IAUT240N08S5N019
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Thermal characteristics2)
R thJC
Thermal resistance, junction - case
-
-
-
0.65 K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
VGS=0 V,
I D=1 mA
Drain-source breakdown voltage2)
V(BR)DSS
80
2.2
-
-
3
-
3.8
1
V
VGS(th) VDS=VGS, I D=160 µA
Gate threshold voltage
VDS=80 V, VGS=0 V,
T j=25 °C
Zero gate voltage drain current2)
I DSS
0.1
µA
V
DS=40 V, VGS=0 V,
-
1
20
T j=85 °C2)
I GSS
VGS=20 V, VDS=0 V
Gate-source leakage current
-
-
-
-
100 nA
RDS(on) VGS=6 V, I D=60 A
Drain-source on-state resistance
2.0
1.5
3.0
1.9
mΩ
V
GS=10 V, I D=100 A
Rev. 1.0
page 2
2017-07-20
IAUT240N08S5N019
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
7126
1152
51
9264 pF
1498
VGS=0 V, VDS=40 V,
f =1 MHz
76
18
-
-
-
-
ns
12
V
DD=40 V, VGS=10 V,
I D=100 A, R G=3.5
t d(off)
t f
Turn-off delay time
Fall time
35
36
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
32
22
42
33
130
-
nC
Q gd
VDD=40 V, I D=100 A,
GS=0 to 10 V
V
Q g
100
4.7
Vplateau
Gate plateau voltage
V
A
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
I S
-
-
-
-
240
960
T C=25 °C
I S,pulse
VGS=0 V, I F=100 A,
T j=25 °C
VSD
Diode forward voltage
-
0.9
1.2
V
Reverse recovery time2)
t rr
-
-
71
-
-
ns
VR=40 V, I F=50A,
diF/dt =100 A/µs
Reverse recovery charge2)
Q rr
126
nC
1) Current is limited by bondwire; with an R thJC = 0.65 K/W the chip is able to carry 246A at 25°C.
2) Defined by design. Not subject to production test.
Rev. 1.0
page 3
2017-07-20
IAUT240N08S5N019
1 Power dissipation
2 Drain current
Ptot = f(T C); VGS ≥ 6 V
I D = f(T C); VGS ≥ 6 V
250
200
150
100
50
250
200
150
100
50
0
0
0
50
100
150
200
0
50
100
150
200
TC [°C]
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
Z thJC = f(t p)
I D = f(VDS); T C = 25 °C; D = 0
parameter: t p
parameter: D =t p/T
100
1000
100
10
1 µs
10 µs
0.5
100 µs
1 ms
10-1
0.1
0.05
0.01
10-2
single pulse
10-3
1
0.1
1
10
100
10-6
10-5
10-4
10-3
10-2
10-1
100
VDS [V]
tp [s]
Rev. 1.0
page 4
2017-07-20
IAUT240N08S5N019
5 Typ. output characteristics
I D = f(VDS); T j = 25 °C
parameter: VGS
6 Typ. drain-source on-state resistance
R DS(on) = (I D); T j = 25 °C
parameter: VGS
2.5
2.4
2.3
2.2
2.1
2
3000
2800
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
10 V
6 V
9 V
6.5 V
8 V
7 V
1.9
1.8
1.7
1.6
1.5
7 V
8 V
600
9 V
6.5 V
400
10 V
200
6 V
0
0
50
100
ID [A]
150
200
0
1
2
3
4
5
6
7
8
9
10
VDS [V]
7 Typ. transfer characteristics
I D = f(VGS); VDS = 6V
parameter: T j
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 100 A; VGS = 10 V
1000
800
600
400
200
0
3.5
3
-55 °C
175 °C
25 °C
2.5
2
1.5
1
-60
-20
20
60
100
140
180
2
4
6
8
Tj [°C]
VGS [V]
Rev. 1.0
page 5
2017-07-20
IAUT240N08S5N019
9 Typ. gate threshold voltage
VGS(th) = f(T j); VGS = VDS
parameter: I D
10 Typ. capacitances
C = f(VDS); VGS = 0 V; f = 1 MHz
104
4
3.5
3
Ciss
Coss
1600 µA
103
160 µA
2.5
102
2
1.5
1
Crss
0
10
20
30
40
50
60
70
80
-60
-20
20
60
100
140
180
Tj [°C]
VDS [V]
11 Typical forward diode characteristicis
12 Typ. avalanche characteristics
I AS = f(t AV
IF = f(VSD)
)
parameter: T j
parameter: Tj(start)
103
1000
25 °C
100 °C
102
100
150 °C
25 °C
175 °C
101
10
100
1
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
10
100
1000
VSD [V]
tAV [µs]
Rev. 1.0
page 6
2017-07-20
IAUT240N08S5N019
13 Typical avalanche energy
EAS = f(T j)
14 Drain-source breakdown voltage
VBR(DSS) = f(T j); I D_typ = 1 mA
parameter: I D
88
86
84
82
80
78
76
800
700
60 A
600
500
400
120 A
300
200
240 A
100
0
-60
-20
20
60
100
140
180
25
75
125
175
Tj [°C]
Tj [°C]
15 Typ. gate charge
16 Gate charge waveforms
VGS = f(Q gate); I D = 100 A pulsed
parameter: VDD
10
9
8
7
6
5
4
3
2
1
0
16 V
64 V
VGS
40 V
Qg
Qgate
Qgd
Qgs
0
20
40
60
80
100
120
Qgate [nC]
Rev. 1.0
page 7
2017-07-20
IAUT240N08S5N019
Published by
Infineon Technologies AG
81726 Munich, Germany
©
Infineon Technologies AG 2017
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2017-07-20
IAUT240N08S5N019
Revision History
Version
Date
Changes
2017-07-20 Final Data Sheet
Version 1.0
Rev. 1.0
page 9
2017-07-20
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