IAUTN12S5N017 [INFINEON]
The IAUTN12S5N017 is a 1.7 mΩ, 120 V MOSFET coming in the TOLL package with Infineon’s leading OptiMOS™ 5 technology. Next to others the device is designed for HV-LV DCDC converter.;
| 型号： | IAUTN12S5N017 |
| 厂家： | 
Infineon |
| 描述： | The IAUTN12S5N017 is a 1.7 mΩ, 120 V MOSFET coming in the TOLL package with Infineon’s leading OptiMOS™ 5 technology. Next to others the device is designed for HV-LV DCDC converter. CD |
| 文件： | 总12页 (文件大小：1338K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IAUTN12S5N017
Automotive MOSFET
OptiMOS™ 5 Power-Transistor
PG-HSOF-8-1
Tab
Features
Tab
• OptiMOS™ power MOSFET for automotive applications
• N-channel – enhancement mode – normal level
• Extended qualification beyond AEC-Q101
• Enhanced electrical testing
8
8
1
1
• Robust design
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• RoHS compliant
• 100% avalanche tested
• Very low reverse recovery charge (Qrr)
Potential applications
General automotive applications.
Product validation
Qualified for automotive applications. Product validation according to AEC-Q101.
Product Summary
VDS
120
1.7
V
RDS(on)
mΩ
A
ID (chip limited)
314
Type
Package
Marking
IAUTN12S5N017
PG-HSOF-8-1
5N12N017
Data Sheet
Please read the Important Notice and Warnings at the end of this document
www.infineon.com/mosfets
Rev 1.0
2023-03-22
OptiMOS™ 5 Automotive Power MOSFET, 120 V
IAUTN12S5N017
Table of Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
4
6
Package outline & footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2
Data Sheet
2
Rev 1.0
2023-03-22
OptiMOS™ 5 Automotive Power MOSFET, 120 V
IAUTN12S5N017
Maximum ratings
at Tj=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
V GS=10 V, Chip limitation1,2)
V GS=10V, DC current3)
I D
314
300
37
A
Continuous drain current
T a=100 °C, V GS=10 V, R thJA
on 2s2p2,4)
Pulsed drain current2)
I D,pulse
E AS
T C=25 °C, t p= 100 µs
1170
510
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
I D=150 A
mJ
A
I AS
300
–
V GS
±20
V
–
P tot
T j, T stg
–
T C=25 °C
358
W
°C
Power dissipation
-55 ... +175
55/175/56
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
–
–
Data Sheet
3
Rev 1.0
3
2023-03-22
OptiMOS™ 5 Automotive Power MOSFET, 120 V
IAUTN12S5N017
Thermal characteristics2)
Parameter
Values
typ.
–
Symbol
Conditions
Unit
min.
max.
R thJC
R thJA
Thermal resistance, junction - case
Thermal resistance,
junction - ambient4)
–
–
–
0.42 K/W
–
14.8
–
Electrical characteristics
at Tj=25 °C, unless otherwise specified
Parameter
Values
typ.
Symbol
Conditions
Unit
min.
max.
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
V GS=0 V,
I D=1 mA
V (BR)DSS
V GS(th)
I DSS
120
2.6
–
–
–
3.6
3
V
V DS=V GS, I D=270 µA
3.1
0.3
V DS=120 V, V GS=0 V, T j=25 °C
Zero gate voltage drain current
µA
V DS=120 V, V GS=0 V,
T j=100 °C2)
–
10
100
I GSS
V GS=20 V, V DS=0 V
V GS=7 V, I D=50 A
V GS=10 V, I D=100 A
–
Gate-source leakage current
–
–
–
–
–
100 nA
2.8 mΩ
1.7
R DS(on)
Drain-source on-state resistance
2.0
1.5
1.1
Gate resistance2)
R G
–
Ω
Data Sheet
4
Rev 1.0
4
2023-03-22
OptiMOS™ 5 Automotive Power MOSFET, 120 V
IAUTN12S5N017
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Dynamic characteristics2)
C iss
C oss
C rss
t d(on)
t r
Input capacitance
–
–
–
–
–
–
–
8260 10740 pF
V GS=0 V, V DS=60 V, f =1 MHz
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
2369
45
3080
68
–
27
ns
47
–
V DD=60 V, V GS=10 V,
I D=100 A, R G=3.5 Ω
t d(off)
t f
Turn-off delay time
Fall time
43
–
47
–
Gate Charge Characteristics2)
Q gs
Gate to source charge
–
–
–
–
43
23
55 nC
35
Q gd
Gate to drain charge
Gate charge total
V DD=60 V, I D=100 A,
V GS=0 to 10 V
Q g
111
5.2
145
V plateau
Gate plateau voltage
–
V
Reverse Diode
Diode continous forward current2)
I S
T C=25 °C
–
–
–
–
314
A
V
Diode pulse current2)
I S,pulse
T C=25 °C, t p= 100 µs
1170
V SD
V GS=0 V, I F=100 A, T j=25 °C
Diode forward voltage
–
0.85
0.95
Reverse recovery time2)
Reverse recovery charge2)
t rr
–
–
45
34
67 ns
68 nC
V R=60 V, I F=50A,
di F/dt =100 A/µs
Q rr
1) Practically the current is limited by the overall system design including the customer-specific PCB.
2) The parameter is not subject to production testing – specified by design.
3) Current is limited by package.
4) Device on 2s2p FR4 PCB defined in accordance with JEDEC standards (JESD51-5, -7). PCB is vertical in still air.
Data Sheet
Rev 1.0
5
5
2023-03-22
OptiMOS™ 5 Automotive Power MOSFET, 120 V
IAUTN12S5N017
Electrical characteristics diagrams
1 Power dissipation
2 Drain current
P tot = f(T C); V GS ≥ 6 V
I D = f(T C); V GS ≥ 6 V
400
300
200
100
0
350
Chip limit
300
250
200
150
100
50
DC current
0
0
50
100
150
200
25
75
125
TC [°C]
175
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0; parameter: tp
Z thJC = f(t p); parameter: D=tp/T
104
100
1 µs
0.5
103
10 µs
10-1
100 µs
1 ms
0.1
102
101
100
0.05
10-2
0.01
single pulse
10-3
10-6
10-5
10-4
10-3
10-2
10-1
100
10-1
100
101
102
103
tp [s]
VDS [V]
Data Sheet
6
6
Rev 1.0
2023-03-22
OptiMOS™ 5 Automotive Power MOSFET, 120 V
IAUTN12S5N017
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C; parameter: VGS
R DS(on) = f(I D); T j = 25 °C; parameter: VGS
10
6 V
5.5 V
5 V
10 V
1200
9
8
7
6
5
4
3
2
1
1000
800
600
400
200
0
7 V
6.5 V
6 V
6.5 V
7 V
5.5 V
5 V
10 V
0
100
200
300
0
1
2
3
4
5
6
7
ID [A]
VDS [V]
7 Typ. transfer characteristics
8 Typ. drain-source on-state resistance
I D = f(V GS); V DS = 6V: parameter: Tj
R DS(on) = f(T j); parameter: ID, VGS
3.7
3.5
3.3
3.1
2.9
2.7
-55 °C
175 °C
25 °C
1200
1000
800
600
400
200
0
VGS=7 V,
ID=50 A
2.5
2.3
2.1
1.9
VGS=10 V,
ID=100 A
1.7
1.5
1.3
1.1
0.9
-60
-20
20
60
100
140
180
3
5
7
9
Tj [°C]
VGS [V]
Data Sheet
7
7
Rev 1.0
2023-03-22
OptiMOS™ 5 Automotive Power MOSFET, 120 V
IAUTN12S5N017
9 Typ. gate threshold voltage
10 Typ. capacitances
V GS(th) = f(T j); V GS = V DS; parameter: I D
C = f(V DS); V GS = 0 V; f = 1 MHz
105
4
3.5
Ciss
104
103
102
101
2700 µA
3
2.5
2
Coss
270 µA
Crss
1.5
1
0
50
VDS [V]
100
-60
-20
20
60
Tj [°C]
100
140
180
11 Typical forward diode characteristics
12 Typ. avalanche characteristics
I F = f(V SD ); parameter: T j
I AS = f(t AV); parameter: T j(start)
1000
104
103
25 °C
100
102
100 °C
150 °C
25 °C
175 °C
101
10
100
1
10
100
1000
0.2
0.4
0.6
0.8
1
1.2
1.4
tAV [µs]
VSD [V]
Data Sheet
8
8
Rev 1.0
2023-03-22
OptiMOS™ 5 Automotive Power MOSFET, 120 V
IAUTN12S5N017
13 Typical avalanche energy
14 Drain-source breakdown voltage
E AS = f(T j); parameter: ID
V BR(DSS) = f(T j); I D_typ = 1 mA
130
129
128
127
126
125
124
123
122
121
120
119
118
117
116
115
114
1200
75 A
800
150 A
400
300 A
0
-60
-20
20
60
100
140
180
25
75
125
175
Tj [°C]
Tj [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 100 A pulsed; parameter: V DD
10
24 V
9
VGS
60 V
96 V
Qg
8
7
6
5
4
3
2
1
0
Qgate
Qgd
Qgs
0
40
80
120
Qgate [nC]
Data Sheet
9
9
Rev 1.0
2023-03-22
OptiMOS™ 5 Automotive Power MOSFET, 120 V
IAUTN12S5N017
Package Outline
Footprint
Packaging
Data Sheet
1
1
0
0
Rev. 1.0
2022-12-15
OptiMOS™ 5 Automotive Power MOSFET, 120 V
IAUTN12S5N017
Revision History
Revision
Date
Changes
Revision 1.0
2022-12-15
Final data sheet
Data Sheet
11
Rev 1.0
11
2023-03-22
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2022-12-15
Published by
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regarded as
a guarantee of conditions or characteristics conditions and prices, please contact the nearest Infineon
Infineon Technologies AG
81726 Munich, Germany
("Beschaffenheitsgarantie").
Technologies Office (www.infineon.com).
With respect to any examples, hints or any typical values stated
herein and/or any information regarding the application of the
product, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without
limitation warranties of non-infringement of intellectual
property rights of any third party.
WARNINGS
© 2022 Infineon Technologies AG
All Rights Reserved.
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dangerous substances. For information on the types in
question please contact the nearest Infineon Technologies
Office.
In addition, any information given in this document is subject to
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document and any applicable legal requirements, norms and
standards concerning customer's products and any use of the
product of Infineon Technologies in customer's applications.
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such application.
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Document reference
IAUTN12S5N017-Data-Sheet-10-
Infineon
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