FF750R12ME7_B11 [INFINEON]
PressFIT;
Infineon 
FF750R12ME7_B11
™
EconoDUAL 3 module
™
™
EconoDUAL 3 module with TRENCHSTOP IGBT7 and emitter controlled 7 diode and NTC
Features
• Electrical features
- VCES = 1200 V
- IC nom = 750 A / ICRM = 1500 A
- Integrated temperature sensor
- TRENCHSTOPTM IGBT7
- VCE,sat with positive temperature coefficient
• Mechanical features
- PressFIT contact technology
- Standard housing
- Isolated base plate
- High power density
Potential applications
• Commercial agriculture vehicles
• High-power converters
• Motor drives
• Servo drives
• UPS systems
Product validation
• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068
Description
-
Datasheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
Revision 1.10
2021-10-11
FF750R12ME7_B11
™
EconoDUAL 3 module
Table of contents
Table of contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
1
2
3
4
5
6
7
8
Datasheet
2
Revision 1.10
2021-10-11
FF750R12ME7_B11
™
EconoDUAL 3 module
1 Package
1
Package
Table 1
Insulation coordination
Symbol Note or test condition
Parameter
Values
3.4
Unit
Isolation test voltage
VISOL
RMS, f = 50 Hz, t = 1 min
kV
Material of module
baseplate
Cu
Internal isolation
Creepage distance
Creepage distance
Clearance
basic insulation (class 1, IEC 61140)
Al2O3
15.0
13.0
12.5
10.0
> 200
140
dCreep terminal to heatsink
mm
mm
mm
mm
dCreep terminal to terminal
dClear terminal to heatsink
dClear terminal to terminal
CTI
Clearance
Comparative tracking index
Relative thermal index
(electrical)
RTI
housing
°C
Table 2
Characteristic values
Symbol Note or test condition
Parameter
Values
Unit
Min. Typ. Max.
Stray inductance module
LsCE
20
nH
Module lead resistance,
terminals - chip
RCC'+EE' TC=25°C, per switch
0.8
mΩ
Storage temperature
Tstg
-40
3
125
6
°C
Mounting torque for module
mounting
M
M
G
- Mounting according to M5, Screw
Nm
valid application note
Terminal connection torque
- Mounting according to M6, Screw
valid application note
3
6
Nm
g
Weight
345
2
IGBT, Inverter
Table 3
Maximum rated values
Symbol Note or test condition
VCES
ICDC
Parameter
Values
1200
750
Unit
Collector-emitter voltage
Tvj = 25 °C
TC = 90 °C
V
A
Continuous DC collector
current
Tvj max = 175 °C
Maximum RMS module DC-
terminal current
ItRMS
TTerminal = 90 °C,
TC = 90 °C
580
565
A
TTerminal = 105 °C,
TC = 90 °C
(table continues...)
Datasheet
3
Revision 1.10
2021-10-11
FF750R12ME7_B11
™
EconoDUAL 3 module
2 IGBT, Inverter
Table 3
(continued) Maximum rated values
Symbol Note or test condition
ICRM tP = 1 ms
Parameter
Values
Unit
Repetitive peak collector
current
1500
A
Gate-emitter peak voltage
VGES
20
V
Table 4
Characteristic values
Parameter
Symbol Note or test condition
Values
Unit
Min. Typ. Max.
Collector-emitter saturation
voltage
VCE sat IC = 750 A, VGE = 15 V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
1.50
1.65
1.75
5.80
12
1.75
V
Gate threshold voltage
Gate charge
VGEth
QG
IC = 15 mA, VCE = VGE, Tvj = 25 °C
5.15
6.45
V
VGE = 15 V, VCE = 600 V
µC
Ω
Internal gate resistor
Input capacitance
RGint
Cies
Cres
ICES
Tvj = 25 °C
0.5
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V
115
0.58
nF
nF
µA
Reverse transfer capacitance
Collector-emitter cut-off
current
VCE = 1200 V, VGE = 0 V
Tvj = 25 °C
45
Gate-emitter leakage current
IGES
tdon
VCE = 0 V, VGE = 20 V, Tvj = 25 °C
100
nA
µs
Turn-on delay time
(inductive load)
IC = 750 A, VCE = 600 V,
VGE = 15 V, RGon = 0.5 Ω
Tvj = 25 °C
0.300
0.320
0.340
0.079
0.086
0.090
0.470
0.550
0.600
0.110
0.240
0.350
53
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Rise time (inductive load)
tr
tdoff
tf
IC = 750 A, VCE = 600 V,
VGE = 15 V, RGon = 0.5 Ω
µs
µs
Turn-off delay time
(inductive load)
IC = 750 A, VCE = 600 V,
VGE = 15 V, RGoff = 0.5 Ω
Fall time (inductive load)
IC = 750 A, VCE = 600 V,
VGE = 15 V, RGoff = 0.5 Ω
µs
Turn-on energy loss per
pulse
Eon
IC = 750 A, VCE = 600 V,
mJ
L = 25 nH, VGE = 15 V,
σ
86
RGon = 0.5 Ω, di/dt =
107
7000 A/µs (Tvj = 175 °C)
(table continues...)
Datasheet
4
Revision 1.10
2021-10-11
FF750R12ME7_B11
™
EconoDUAL 3 module
3 Diode, Inverter
Table 4
(continued) Characteristic values
Symbol Note or test condition
Parameter
Values
Unit
Min. Typ. Max.
Turn-off energy loss per
pulse
Eoff
IC = 750 A, VCE = 600 V,
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
65
mJ
L = 25 nH, VGE = 15 V,
σ
97.5
121
RGoff = 0.5 Ω, dv/dt =
3100 V/µs (Tvj = 175 °C)
SC data
ISC
VGE ≤ 15 V, VCC = 800 V,
VCEmax=VCES-LsCE*di/dt
tP ≤ 8 µs,
Tvj = 150 °C
2900
A
tP ≤ 6 µs,
Tvj = 175 °C
2800
Thermal resistance, junction
to case
RthJC
RthCH
Tvj op
per IGBT
0.0520 K/W
0.0260 K/W
Thermal resistance, case to
heat sink
per IGBT, λgrease= 1 W/(m*K)
Temperature under
switching conditions
-40
175
°C
Note:
Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN
2018-14.
3
Diode, Inverter
Table 5
Maximum rated values
Parameter
Symbol Note or test condition
Values
Unit
Repetitive peak reverse
voltage
VRRM
Tvj = 25 °C
1200
V
Continuous DC forward
current
IF
750
A
A
Repetitive peak forward
current
I2t - value
IFRM
I2t
tP = 1 ms
1500
tP = 10 ms, VR = 0 V
Tvj = 125 °C
Tvj = 175 °C
28700
20500
A²s
Table 6
Characteristic values
Symbol Note or test condition
Parameter
Values
Unit
Min. Typ. Max.
Forward voltage
VF
IF = 750 A, VGE = 0 V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
1.80
1.70
1.60
2.10
V
(table continues...)
Datasheet
5
Revision 1.10
2021-10-11
FF750R12ME7_B11
™
EconoDUAL 3 module
4 NTC-Thermistor
Table 6
(continued) Characteristic values
Symbol Note or test condition
Parameter
Values
Unit
Min. Typ. Max.
Peak reverse recovery
current
IRM
VR = 600 V, IF = 750 A,
VGE = -15 V, -diF/dt =
7000 A/µs (Tvj = 175 °C)
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
400
485
561
48
A
Recovered charge
Qr
VR = 600 V, IF = 750 A,
VGE = -15 V, -diF/dt =
7000 A/µs (Tvj = 175 °C)
µC
84
131
20
Reverse recovery energy
Erec
VR = 600 V, IF = 750 A,
VGE = -15 V, -diF/dt =
7000 A/µs (Tvj = 175 °C)
mJ
32
53
Thermal resistance, junction
to case
RthJC
RthCH
Tvj op
per diode
0.101 K/W
Thermal resistance, case to
heat sink
per diode, λgrease= 1 W/(m*K)
0.0380 K/W
Temperature under
switching conditions
-40
175
°C
Note:
Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN
2018-14.
4
NTC-Thermistor
Table 7
Characteristic values
Parameter
Symbol Note or test condition
Values
Unit
Min. Typ. Max.
Rated resistance
Deviation of R100
Power dissipation
B-value
R25
ΔR/R
P25
TNTC = 25 °C
5
kΩ
%
TNTC = 100 °C, R100 = 493 Ω
TNTC = 25 °C
-5
5
20
mW
K
B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))]
B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))]
B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))]
3375
3411
3433
B-value
K
B-value
K
Note:
Specification according to the valid application note.
Datasheet
6
Revision 1.10
2021-10-11
FF750R12ME7_B11
™
EconoDUAL 3 module
5 Characteristics diagrams
5
Characteristics diagrams
output characteristic (typical), IGBT, Inverter
IC = f(VCE
VGE = 15 V
output characteristic (typical), IGBT, Inverter
IC = f(VCE
Tvj = 175 °C
)
)
1500
1500
1350
1200
1050
900
750
600
450
300
150
0
1350
1200
1050
900
750
600
450
300
150
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
transfer characteristic (typical), IGBT, Inverter
IC = f(VGE
VCE = 20 V
switching losses (typical), IGBT, Inverter
E = f(IC)
RGoff = 0.5 Ω, RGon = 0.5 Ω, VCE = 600 V, VGE = -15 / 15 V
)
1500
700
1350
1200
1050
900
750
600
450
300
150
0
600
500
400
300
200
100
0
5
6
7
8
9
10
11
12
13
0
250
500
750
1000
1250
1500
Datasheet
7
Revision 1.10
2021-10-11
FF750R12ME7_B11
™
EconoDUAL 3 module
5 Characteristics diagrams
Switching times (typical), IGBT, Inverter
switching losses (typical), IGBT, Inverter
t = f(IC)
E = f(RG)
RGoff = 0.5 Ω, RGon = 0.5 Ω, VGE = 15 V, VCE = 600 V, Tvj = 175 IC = 750 A, VCE = 600 V, VGE = -15 / 15 V
°C
10
400
350
300
250
200
150
100
50
1
0.1
0.01
0
0
250
500
750
1000
1250
1500
0
1
2
3
4
5
transient thermal impedance , IGBT, Inverter
Zth = f(t)
Voltage slope (typical), IGBT, Inverter
dv/dt = f(RG)
IC = 750 A, VCE = 600 V, VGE = 15 V, Tvj = 25 °C
1
8
7
6
5
4
3
2
1
0
0.1
0.01
0.001
0
1
2
3
4
5
0.001
0.01
0.1
1
10
Datasheet
8
Revision 1.10
2021-10-11
FF750R12ME7_B11
™
EconoDUAL 3 module
5 Characteristics diagrams
Switching times (typical), IGBT, Inverter
t = f(RG)
VGE = 15 V, IC = 750 A, VCE = 600 V, Tvj = 175 °C
reverse bias safe operating area (RBSOA), IGBT,
Inverter
IC = f(VCE
)
RGoff = 0.5 Ω, VGE = 15 V, Tvj = 175 °C
10
1750
1500
1250
1000
750
500
250
0
1
0.1
0.01
0
1
2
3
4
5
0
200
400
600
800 1000 1200 1400
capacity characteristic (typical), IGBT, Inverter
C = f(VCE
gate charge characteristic (typical), IGBT, Inverter
VGE = f(QG)
)
f = 100 kHz, VGE = 0 V, Tvj = 25 °C
IC = 750 A, Tvj = 25 °C
1000
15
12
9
100
10
6
3
0
1
-3
-6
-9
-12
-15
0.1
0.01
0
10 20 30 40 50 60 70 80 90 100
0
1
2
3
4
5
6
7
8
9
10 11 12 13
Datasheet
9
Revision 1.10
2021-10-11
FF750R12ME7_B11
™
EconoDUAL 3 module
5 Characteristics diagrams
forward characteristic (typical), Diode, Inverter
IF = f(VF)
switching losses (typical), Diode, Inverter
Erec = f(IF)
VCE = 600 V, RGon = RGon(IGBT)
1500
1350
1200
1050
900
750
600
450
300
150
0
70
60
50
40
30
20
10
0
0.0
0.5
1.0
1.5
2.0
2.5
0
250
500
750
1000
1250
1500
switching losses (typical), Diode, Inverter
Erec = f(RG)
transient thermal impedance , Diode, Inverter
Zth = f(t)
VCE = 600 V, IF = 750 A
70
60
50
40
30
20
10
0
1
0.1
0.01
0.001
0
1
2
3
4
5
0.001
0.01
0.1
1
10
Datasheet
10
Revision 1.10
2021-10-11
FF750R12ME7_B11
™
EconoDUAL 3 module
5 Characteristics diagrams
temperature characteristic (typical), NTC-Thermistor
R = f(TNTC
)
100000
10000
1000
100
10
0
25
50
75
100
125
150
175
Datasheet
11
Revision 1.10
2021-10-11
FF750R12ME7_B11
™
EconoDUAL 3 module
6 Circuit diagram
6
Circuit diagram
4
9
T1
D1
7
8
6
NTC
5
10,11
-
0
0
.
T2
D2
0
1
1
2
4
9
1
2
0
0
3
W
Figure 1
Datasheet
12
Revision 1.10
2021-10-11
FF750R12ME7_B11
™
EconoDUAL 3 module
7 Package outlines
7
Package outlines
1ADE
Terminals
L
Kennzeichnungsflche
Label-side
)
5
,
3
(
)
5
,
0
7
2
(
1
)
5
,
6
(
A
3
152B0,5
122B0,5
E
)
5
C
,
5
P
(
P0,4ABC
L
0,4ADE
L
(
P
5
,
9
8 7
6 5
5
)
28,75
25
P0,6ADE
L
4x
10
11
4
3
)
4
,
6
11
2
4
P
(
,
4
4
)
)
4
Y
2
0
0
,
2
,
,
n
,
0
8
0
0
X
3
2
B
0
B
.
.
5
,
n
n
2
i
i
2
6
m
m
6
(
(
6
(min. 100,0)
(min. 78,0)
M
11
5
x
2
4
)
5
,
5
25
P
(
28,75
1
2
(P5,5)
55
0,4ADE
L
2x
B
Schraubenempfehlung:
screw recommendation:
EJOT PT K 25x10 WN1451
0
5
5
5
5
5
5
,
,
5
2
2
5
8
,
,
8
D
6
7
7
6
EJOT DELTA PT 25x10 WN5451
4
4
P0,4ABC
L
Wave-Flche
wave-area
18,05
10,05
0
10,05
18,05
0
8
8
8
8
,
,
,
,
2
9
9
2
3
3
4
4
M
+0,09
+0,1
4x P2,8
7x P1
-
-
0
0,06
0,4M-M
0,05M-M
L
4x
L
7x
29,2
28,75
Y
X
0
28,75
29,2
0
5
0
5
3
9
0
5
1
1
2
3
2
4
,
,
4
,
,
,
7
6
7
3
7
1
1
3
4
4
0
0
.
0
6
- PCB: Durchmesser des metallisierten Loches
- PCB: diameter of plated hole
7
1
9
1
0
0
W
Figure 2
Datasheet
13
Revision 1.10
2021-10-11
FF750R12ME7_B11
™
EconoDUAL 3 module
8 Module label code
8
Module label code
Module label code
Code format
Encoding
Data Matrix
ASCII text
Barcode Code128
Code Set A
23 digits
Symbol size
Standard
16x16
IEC24720 and IEC16022
IEC8859-1
Code content
Content
Digit
1 – 5
6 - 11
12 - 19
20 – 21
22 – 23
Example
Module serial number
Module material number
Production order number
Date code (production year)
Date code (production week)
71549
142846
55054991
15
30
Example
71549142846550549911530
71549142846550549911530
Figure 3
Datasheet
14
Revision 1.10
2021-10-11
FF750R12ME7_B11
™
EconoDUAL 3 module
Revision history
Revision history
Document revision
Date of release Description of changes
V1.0
0.11
1.00
1.10
2019-11-06
Target datasheet
Target datasheet
Final datasheet
Final datasheet
2020-11-24
2021-05-27
2021-10-11
Datasheet
15
Revision 1.10
2021-10-11
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2021-10-11
Published by
Infineon Technologies AG
81726 Munich, Germany
IMPORTANT NOTICE
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents
of the Automotive Electronics Council.
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”).
With respect to any examples, hints or any typical
values stated herein and/or any information regarding
the application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities
of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
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dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
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Document reference
IFX-AAY184-004
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responsibility of customer’s technical departments to
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