FF750R17ME7D_B11_技术文档

FF750R17ME7D_B11

™

EconoDUAL 3 module

™

EconoDUAL 3 module with TRENCHSTOP IGBT7 and emitter controlled 7 diode and PressFIT / NTC

Features

• Electrical features

- V_CES= 1700 V

- I_{C nom}= 750 A / I_CRM= 1500 A

- Integrated temperature sensor

- High current density

- Low V_CE,sat

- Overload operation up to 175°C

- TRENCHSTOP^TMIGBT7

- V_CE,satwith positive temperature coeﬀicient

- Enlarged diode for regenerative operation

• Mechanical features

- High power density

- Isolated base plate

- PressFIT contact technology

- Standard housing

Potential applications

• High-power converters

• Medium-voltage converters

• Motor drives

• Wind turbines

• Power transmission and distribution

Product validation

• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068

Description

Datasheet

www.infineon.com

Please read the sections "Important notice" and "Warnings" at the end of this document

Revision 1.00

2022-05-06

FF750R17ME7D_B11

™

EconoDUAL 3 module

Table of contents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7

Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

1

2

3

4

5

6

7

8

Datasheet

2

Revision 1.00

2022-05-06

FF750R17ME7D_B11

™

EconoDUAL 3 module

1 Package

1

Package

Table 1

Insulation coordination

Symbol Note or test condition

Parameter

Values

3.4

Unit

Isolation test voltage

V_ISOL

RMS, f = 50 Hz, t = 1 min

kV

Material of module

baseplate

Cu

Internal isolation

Creepage distance

Clearance

basic insulation (class 1, IEC 61140)

Al2O3

15.0

d_Creepterminal to heatsink

mm

d_Creepterminal to terminal

d_Clearterminal to heatsink

d_Clearterminal to terminal

CTI

13.0

12.5

Clearance

10.0

Comparative tracking

index

> 200

Relative thermal index

(electrical)

RTI

housing

140

°C

Table 2

Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

20

Unit

Min.

Max.

Stray inductance module

L_sCE

nH

Module lead resistance,

terminals - chip

R_CC'+EE'T_C=25°C, per switch

0.8

mΩ

Storage temperature

T_stg

-40

3

125

6

°C

Mounting torque for

module mounting

M

G

- Mounting according to M5, Screw

Nm

valid application note

Terminal connection

torque

- Mounting according to M6, Screw

valid application note

3

6

Nm

g

Weight

345

2

IGBT, Inverter

Table 3

Maximum rated values

Symbol Note or test condition

V_CES

I_CDC

Parameter

Values

1700

750

Unit

Collector-emitter voltage

T_vj= 25 °C

T_C= 80 °C

V

A

Continuous DC collector

current

T_{vj max}= 175 °C

Maximum RMS module DC-

terminal current

I_tRMS

T_Terminal= 90 °C,

T_C= 90 °C

580

565

A

T_Terminal= 105 °C,

T_C= 90 °C

(table continues...)

Datasheet

3

Revision 1.00

2022-05-06

FF750R17ME7D_B11

™

EconoDUAL 3 module

2 IGBT, Inverter

Table 3

(continued) Maximum rated values

Symbol Note or test condition

I_CRMt_plimited by T_{vj op}

Parameter

Values

Unit

Repetitive peak collector

current

1500

A

Gate-emitter peak voltage

V_GES

20

V

Table 4

Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

1.70

1.95

2.05

2.10

5.80

7.15

0.33

78.1

0.275

Unit

Min.

Max.

Collector-emitter

saturation voltage

V_{CE sat}I_C= 750 A, V_GE= 15 V

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

T_vj= 175 °C

1.85

V

Gate threshold voltage

Gate charge

V_GEth

Q_G

I_C= 15.7 mA, V_CE= V_GE, T_vj= 25 °C

5.15

6.45

V

V_GE= 15 V, V_CE= 900 V

T_vj= 25 °C

µC

Ω

Internal gate resistor

Input capacitance

R_Gint

C_ies

f = 100 kHz, T_vj= 25 °C, V_CE= 25 V, V_GE= 0 V

nF

Reverse transfer

capacitance

C_res

Collector-emitter cut-oﬀ

I_CES

I_GES

t_don

V_CE= 1700 V, V_GE= 0 V

T_vj= 25 °C

5

mA

nA

µs

current

Gate-emitter leakage

current

V_CE= 0 V, V_GE= 20 V, T_vj= 25 °C

100

Turn-on delay time

(inductive load)

I_C= 750 A, V_CE= 900 V,

V_GE= 15 V, R_Gon= 0.51 Ω

T_vj= 25 °C

0.158

0.172

0.178

0.184

0.046

0.053

0.055

0.057

0.536

0.613

0.631

0.648

T_vj= 125 °C

T_vj= 150 °C

T_vj= 175 °C

T_vj= 25 °C

Rise time (inductive load)

t_r

I_C= 750 A, V_CE= 900 V,

V_GE= 15 V, R_Gon= 0.51 Ω

µs

T_vj= 125 °C

T_vj= 150 °C

T_vj= 175 °C

T_vj= 25 °C

Turn-oﬀ delay time

(inductive load)

t_doﬀ

I_C= 750 A, V_CE= 900 V,

V_GE= 15 V, R_Goﬀ= 2.2 Ω

T_vj= 125 °C

T_vj= 150 °C

T_vj= 175 °C

(table continues...)

Datasheet

4

Revision 1.00

2022-05-06

FF750R17ME7D_B11

™

EconoDUAL 3 module

3 Diode, Inverter

Table 4

(continued) Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

0.231

0.450

0.525

0.599

74

Unit

Min.

Max.

Fall time (inductive load)

t_f

I_C= 750 A, V_CE= 900 V,

V_GE= 15 V, R_Goﬀ= 2.2 Ω

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

T_vj= 175 °C

µs

Turn-on energy loss per

pulse

E_on

E_oﬀ

I_SC

I_C= 750 A, V_CE= 900 V,

L_σ= 25 nH, V_GE= 15 V,

R_Gon= 0.51 Ω, di/dt =

11.1 kA/µs (T_vj= 175 °C)

mJ

A

171

204

238

Turn-oﬀ energy loss per

pulse

I_C= 750 A, V_CE= 900 V,

L_σ= 25 nH, V_GE= 15 V,

R_Goﬀ= 2.2 Ω, dv/dt =

3600 V/µs (T_vj= 175 °C)

132

208

224

239

SC data

V_GE= 15 V, V_CC= 1000 V, t_P≤ 8 µs,

V_CEmax=V_CES-L_sCE*di/dt

2600

T_vj=150 °C

t_P≤ 6 µs,

T_vj=175 °C

2500

Thermal resistance,

junction to case

R_thJC

R_thCH

T_{vj op}

per IGBT

per IGBT, λ_grease= 1 W/(m·K)

0.0551 K/W

K/W

Thermal resistance, case to

heat sink

0.0345

Temperature under

switching conditions

-40

175

°C

Note:

T_vjop> 150 °C is only allowed for operation at overload conditions. For detailed specifications please refer to

AN 2018-14.

3

Diode, Inverter

Table 5

Maximum rated values

Parameter

Symbol Note or test condition

Values

Unit

Repetitive peak reverse

voltage

V_RRM

T_vj= 25 °C

1700

V

Implemented forward

current

I_FN

I_F

1200

750

A

Continuous DC forward

current

(table continues...)

Datasheet

5

Revision 1.00

2022-05-06

FF750R17ME7D_B11

™

EconoDUAL 3 module

3 Diode, Inverter

Table 5

(continued) Maximum rated values

Symbol Note or test condition

Parameter

Values

Unit

Repetitive peak forward

current

I_FRM

t_P= 1 ms

1500

A

I²t - value

I²t

t_P= 10 ms, V_R= 0 V

T_vj= 125 °C

T_vj= 175 °C

48300

37200

A²s

Table 6

Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

2.00

1.85

1.80

1.75

950

Unit

Min.

Max.

Forward voltage

V_F

I_RM

Q_r

I_F= 750 A, V_GE= 0 V

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

T_vj= 175 °C

2.15

V

Peak reverse recovery

current

V_R= 900 V, I_F= 750 A,

V_GE= -15 V, -di_F/dt = 11.8

kA/µs (T_vj= 175 °C)

A

1020

115

Recovered charge

V_R= 900 V, I_F= 750 A,

V_GE= -15 V, -di_F/dt = 11.8

kA/µs (T_vj= 175 °C)

µC

mJ

218

255

292

Reverse recovery energy

E_rec

V_R= 900 V, I_F= 750 A,

V_GE= -15 V, -di_F/dt = 11.8

kA/µs (T_vj= 175 °C)

76

132

152

171

Thermal resistance,

junction to case

R_thJC

R_thCH

T_{vj op}

per diode

0.0753 K/W

K/W

Thermal resistance, case to

heat sink

per diode, λ_grease= 1 W/(m·K)

0.0363

Temperature under

switching conditions

-40

175

°C

Note:

T_{vj op}> 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN

2018-14.

Datasheet

6

Revision 1.00

2022-05-06

FF750R17ME7D_B11

™

EconoDUAL 3 module

4 NTC-Thermistor

4

NTC-Thermistor

Table 7

Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

5

Unit

Min.

Max.

Rated resistance

Deviation of R₁₀₀

Power dissipation

B-value

R₂₅

ΔR/R

P₂₅

T_NTC= 25 °C

kΩ

%

T_NTC= 100 °C, R₁₀₀= 493 Ω

T_NTC= 25 °C

-5

5

20

mW

K

B_25/50R₂= R₂₅exp[B_25/50(1/T₂-1/(298,15 K))]

B_25/80R₂= R₂₅exp[B_25/80(1/T₂-1/(298,15 K))]

B_25/100R₂= R₂₅exp[B_25/100(1/T₂-1/(298,15 K))]

3375

3411

3433

B-value

K

B-value

K

Note:

Specification according to the valid application note.

Datasheet

7

Revision 1.00

2022-05-06

FF750R17ME7D_B11

™

EconoDUAL 3 module

5 Characteristics diagrams

5

Characteristics diagrams

Output characteristic (typical), IGBT, Inverter

I_C= f(V_CE

V_GE= 15 V

Output characteristic field (typical), IGBT, Inverter

I_C= f(V_CE

T_vj= 175 °C

)

1500

1250

1000

750

500

250

0

1250

1000

750

500

250

0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Transfer characteristic (typical), IGBT, Inverter

I_C= f(V_GE

V_CE= 20 V

Switching losses (typical), IGBT, Inverter

E = f(I_C)

)

R_Goﬀ= 2.2 Ω, R_Gon= 0.51 Ω, V_CE= 900 V, V_GE

= 15 V

1500

1200

1100

1000

900

800

700

600

500

400

300

200

100

0

1250

1000

750

500

250

0

4

5

6

7

8

9

10 11 12 13 14

0

250

500

750

1000

1250

1500

Datasheet

8

Revision 1.00

2022-05-06

FF750R17ME7D_B11

™

EconoDUAL 3 module

5 Characteristics diagrams

Switching losses (typical), IGBT, Inverter

Switching times (typical), IGBT, Inverter

E = f(R_G)

t = f(I_C)

I_C= 750 A, V_CE= 900 V, V_GE

=

15 V

R_Goﬀ= 2.2 Ω, R_Gon= 0.51 Ω, V_CE= 900 V, V_GE

175 °C

= 15 V, T_vj=

600

10

500

400

300

200

100

0

1

0.1

0.01

0

1

2

3

4

5

6

0

150 300 450 600 750 900 1050 1200 1350 1500

Switching times (typical), IGBT, Inverter

t = f(R_G)

Voltage slope (typical), IGBT, Inverter

dv/dt = f(R_G)

I_C= 750 A, V_CE= 900 V, V_GE

=

15 V, T_vj= 175 °C

I_C= 750 A, V_CE= 900 V, V_GE= 15 V, T_vj= 25 °C

10

20

18

16

14

12

10

8

1

0.1

6

4

2

0.01

0

1

2

3

4

5

6

0

1

2

3

4

5

6

Datasheet

9

Revision 1.00

2022-05-06

FF750R17ME7D_B11

™

EconoDUAL 3 module

5 Characteristics diagrams

Transient thermal impedance , IGBT, Inverter

Z_th= f(t)

Reverse bias safe operating area (RBSOA), IGBT,

Inverter

I_C= f(V_CE

)

R_Goﬀ= 2.2 Ω, V_GE= 15 V, T_vj= 175 °C

0.1

1800

1650

1500

1350

1200

1050

900

750

600

450

300

150

0

0.01

0.001

0

200 400 600 800 1000 1200 1400 1600 1800

0.001

0.01

0.1

1

10

Capacity characteristic (typical), IGBT, Inverter

C = f(V_CE

Gate charge characteristic (typical), IGBT, Inverter

V_GE= f(Q_G)

)

f = 100 kHz, V_GE= 0 V, T_vj= 25 °C

I_C= 750 A, T_vj= 25 °C

1000

15

13

11

9

100

10

7

5

3

1

-1

-3

-5

-7

-9

-11

-13

-15

1

0.1

0.01

0

10 20 30 40 50 60 70 80 90 100

0

1

2

3

4

5

6

7

8

Datasheet

10

Revision 1.00

2022-05-06

FF750R17ME7D_B11

™

EconoDUAL 3 module

5 Characteristics diagrams

Forward characteristic (typical), Diode, Inverter

I_F= f(V_F)

Switching losses (typical), Diode, Inverter

E_rec= f(I_F)

R_Gon= 0.51 Ω, V_CE= 900 V

1500

1250

1000

750

500

250

0

220

200

180

160

140

120

100

80

60

40

20

0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0

250

500

750

1000

1250

1500

Switching losses (typical), Diode, Inverter

E_rec= f(R_G)

Transient thermal impedance, Diode, Inverter

Z_th= f(t)

V_CE= 900 V, I_F= 750 A

250

225

200

175

150

125

100

75

0.1

0.01

50

25

0

0.001

0

1

2

3

4

5

6

0.001

0.01

0.1

1

10

Datasheet

11

Revision 1.00

2022-05-06

FF750R17ME7D_B11

™

EconoDUAL 3 module

5 Characteristics diagrams

Temperature characteristic (typical), NTC-Thermistor

R = f(T_NTC

)

100000

10000

1000

100

10

0

25

50

75

100

125

150

175

Datasheet

12

Revision 1.00

2022-05-06

FF750R17ME7D_B11

™

EconoDUAL 3 module

6 Circuit diagram

6

Circuit diagram

4

9

T1

D1

7

8

6

NTC

5

10,11

-

0

.

T2

D2

0

1

2

4

9

1

2

0

3

W

Figure 1

Datasheet

13

Revision 1.00

2022-05-06

FF750R17ME7D_B11

™

EconoDUAL 3 module

7 Package outlines

7

Package outlines

Kennzeichnungsflche

Label-side

1ADE

Terminals

L

)

5

,

3

(

)

5

,

0

7

2

(

1

)

5

,

6

(

A

152B0,5

122B0,5

E

C

P0,4ABC

0,4ADE

L

9

8 7

6 5

28,75

25

P0,6ADE

L

4x

10

11

4

)

4

,

2

6

11

4

P

,

(

4

n

)

Y

2

0

,

2

0

,

8

0

X

0

3

2

B

0

.

B

5

,

n

i

2

m

6

(

3

(min. 100,0)

(min. 78,0)

6

M

11

5

x

2

4

)

5

,

5

25

P

(

28,75

1

2

55

(P5,5)

B

0,4ADE

L

2x

Schraubenempfehlung:

screw recommendation:

EJOT PT K 25x10 WN1451

0

5

D

,

5

2

5

8

,

8

6

7

6

EJOT DELTA PT 25x10 WN5451

4

P0,4ABC

L

M

0,05M-M

+

-

0,09

0,06

+

-

0,1

0

7x P1

4x P2,8

L

7x

0,4M-M

L

4x

29,2

28,75

Y

X

0

28,75

29,2

0

5

0

5

3

9

0

5

4

1

2

3

5

2

4

3

4

,

7

6

7

3

9

7

3

1

3

1

4

- PCB: Durchmesser des metallisierten Loches

- PCB: diameter of plated hole

Figure 2

Datasheet

14

Revision 1.00

2022-05-06

FF750R17ME7D_B11

™

EconoDUAL 3 module

8 Module label code

8

Module label code

Code format

Encoding

Data Matrix

ASCII text

Barcode Code128

Code Set A

23 digits

Symbol size

Standard

16x16

IEC24720 and IEC16022

IEC8859-1

Code content

Content

Digit

1 – 5

6 - 11

12 - 19

20 – 21

22 – 23

Example

Module serial number

Module material number

Production order number

Date code (production year)

Date code (production week)

71549

142846

55054991

15

30

Example

71549142846550549911530

Figure 3

Datasheet

15

Revision 1.00

2022-05-06

FF750R17ME7D_B11

™

EconoDUAL 3 module

Revision history

Document revision

Date of release Description of changes

0.10

1.00

2021-10-20

2022-05-06

Initial version

Final datasheet

Datasheet

16

Revision 1.00

2022-05-06

Trademarks

All referenced product or service names and trademarks are the property of their respective owners.

Edition 2022-05-06

Published by

Infineon Technologies AG

81726 Munich, Germany

Important notice

Warnings

The information given in this document shall in no

event be regarded as a guarantee of conditions or

characteristics (“Beschaﬀenheitsgarantie”).

With respect to any examples, hints or any typical

values stated herein and/or any information regarding

the application of the product, Infineon Technologies

hereby disclaims any and all warranties and liabilities

of any kind, including without limitation warranties of

non-infringement of intellectual property rights of any

third party.

In addition, any information given in this document is

subject to customer’s compliance with its obligations

stated in this document and any applicable legal

requirements, norms and standards concerning

customer’s products and any use of the product of

Infineon Technologies in customer’s applications.

Due to technical requirements products may contain

dangerous substances. For information on the types

in question please contact your nearest Infineon

Technologies oﬀice.

Except as otherwise explicitly approved by Infineon

Technologies in

authorized representatives of Infineon Technologies,

Infineon Technologies’ products may not be used in

any applications where a failure of the product or

any consequences of the use thereof can reasonably

be expected to result in personal injury.

a written document signed by

©

2022 Infineon Technologies AG

Do you have a question about any

aspect of this document?

Email: erratum@infineon.com

Document reference

IFX-ABB561-002

The data contained in this document is exclusively

intended for technically trained staﬀ. It is the

responsibility of customer’s technical departments to

evaluate the suitability of the product for the intended

application and the completeness of the product

information given in this document with respect to such

application.


型号：	FF750R17ME7D_B11
厂家：	Infineon
描述：	PressFIT
文件：	总17页 (文件大小：724K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FF750R17ME7D_B11 [INFINEON]

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