F3L75R12W1H3_B27 [INFINEON]
Insulated Gate Bipolar Transistor,;
| 型号： | F3L75R12W1H3_B27 |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 栅 |
| 文件： | 总14页 (文件大小：1421K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-Module
F3L75R12W1H3_B27
J
VCES = 1200V
IC nom = 75A / ICRM = 150A
典型应用
TypicalꢀApplications
• 3-Level-Applications
• SolarꢀApplications
• 三电平应用
• 太阳能应用
电气特性
ElectricalꢀFeatures
• LowꢀInductiveꢀDesign
• LowꢀSwitchingꢀLosses
• LowꢀVCEsat
• 低电感设计
• 低开关损耗
• 低ꢀꢀVCEsat
机械特性
MechanicalꢀFeatures
• 低热阻的三氧化二铝（ꢀAl2O3ꢀ衬底
• 紧凑型设计
• Al2O3ꢀSubstrateꢀwithꢀLowꢀThermalꢀResistance
• Compactꢀdesign
• PressFITꢀ压接技术
• 集成的安装夹使安装坚固
• PressFITꢀContactꢀTechnology
• Rugged mounting due to integrated mounting
clamps
ModuleꢀLabelꢀCode
BarcodeꢀCodeꢀ128
ContentꢀofꢀtheꢀCode
ModuleꢀSerialꢀNumber
Digit
1ꢀ-ꢀꢀꢀ5
ModuleꢀMaterialꢀNumber
ProductionꢀOrderꢀNumber
Datecodeꢀ(ProductionꢀYear)
Datecodeꢀ(ProductionꢀWeek)
6ꢀ-ꢀ11
12ꢀ-ꢀ19
20ꢀ-ꢀ21
22ꢀ-ꢀ23
DMXꢀ-ꢀCode
preparedꢀby:ꢀCM
dateꢀofꢀpublication:ꢀ2014-06-12
revision:ꢀ3.1
approvedꢀby:ꢀAKDA
ULꢀapprovedꢀ(E83335)
1
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-Module
F3L75R12W1H3_B27
IGBT,ꢀT1-T4ꢀ/ꢀIGBT,ꢀT1-T4
最大额定值ꢀ/ꢀMaximumꢀRatedꢀValues
集电极－发射极电压
Tvj = 25°C
VCES
ICN
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
1200
75
ꢀ
ꢀ
ꢀ
ꢀ
V
A
Collector-emitterꢀvoltage
集电极电流
Implementedꢀcollectorꢀcurrent
连续集电极直流电流
ContinuousꢀDCꢀcollectorꢀcurrent
TC = 100°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
IC nom
IC
30
45
A
A
集电极重复峰值电流
Repetitiveꢀpeakꢀcollectorꢀcurrent
tP = 1 ms
ICRM
Ptot
150
275
A
总功率损耗
Totalꢀpowerꢀdissipation
TC = 25°C, Tvj max = 175°C
ꢀ W
栅极－发射极峰值电压
Gate-emitterꢀpeakꢀvoltage
VGES
+/-20
ꢀ
V
特征值ꢀ/ꢀCharacteristicꢀValues
min. typ. max.
集电极－发射极饱和电压
Collector-emitterꢀsaturationꢀvoltage
IC = 30 A, VGE = 15 V
IC = 30 A, VGE = 15 V
IC = 30 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
1,45 1,70
1,55
1,60
V
V
V
VCE sat
栅极阈值电压
Gateꢀthresholdꢀvoltage
IC = 2,60 mA, VCE = VGE, Tvj = 25°C
VGE = -15 V ... +15 V
VGEth
QG
5,0
5,8
0,57
0,0
6,5
V
µC
Ω
栅极电荷
Gateꢀcharge
内部栅极电阻
Internalꢀgateꢀresistor
Tvj = 25°C
RGint
Cies
Cres
ICES
IGES
td on
输入电容
Inputꢀcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
VCE = 0 V, VGE = 20 V, Tvj = 25°C
4,40
0,235
nF
nF
反向传输电容
Reverseꢀtransferꢀcapacitance
集电极-发射极截止电流
Collector-emitterꢀcut-offꢀcurrent
1,0 mA
100 nA
栅极-发射极漏电流
Gate-emitterꢀleakageꢀcurrent
开通延迟时间(电感负载)
Turn-onꢀdelayꢀtime,ꢀinductiveꢀload
IC = 30 A, VCE = 400 V
VGE = 15 V
RGon = 6,8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,03
0,03
0,03
µs
µs
µs
上升时间(电感负载)
Riseꢀtime,ꢀinductiveꢀload
IC = 30 A, VCE = 400 V
VGE = 15 V
RGon = 6,8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,01
0,012
0,012
µs
µs
µs
tr
td off
tf
关断延迟时间(电感负载)
Turn-offꢀdelayꢀtime,ꢀinductiveꢀload
IC = 30 A, VCE = 400 V
VGE = 15 V
RGoff = 6,8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,25
0,32
0,34
µs
µs
µs
下降时间(电感负载)
Fallꢀtime,ꢀinductiveꢀload
IC = 30 A, VCE = 400 V
VGE = 15 V
RGoff = 6,8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,025
0,04
0,045
µs
µs
µs
开通损耗能量ꢀ(每脉冲)
Turn-onꢀenergyꢀlossꢀperꢀpulse
IC = 30 A, VCE = 400 V, LS = 40 nH
VGE = 15 V, di/dt = 2600 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 6,8 Ω
Tvj = 25°C
0,40
0,60
0,70
mJ
mJ
mJ
Eon
Eoff
Tvj = 150°C
关断损耗能量ꢀ(每脉冲）
Turn-offꢀenergyꢀlossꢀperꢀpulse
IC = 30 A, VCE = 400 V, LS = 40 nH
VGE = 15 V, du/dt = 2400 V/µs (Tvj = 150°C) Tvj = 125°C
RGoff = 6,8 Ω
Tvj = 25°C
1,05
1,60
1,75
mJ
mJ
mJ
Tvj = 150°C
短路数据
SCꢀdata
VGE ≤ 15 V, VCC = 800 V
VCEmax = VCES -LsCE ·di/dt
ISC
tP ≤ 10 µs, Tvj = 150°C
270
A
结－外壳热阻
Thermalꢀresistance,ꢀjunctionꢀtoꢀcase
每个ꢀIGBTꢀ/ꢀperꢀIGBT
RthJC
0,50 0,55 K/W
preparedꢀby:ꢀCM
dateꢀofꢀpublication:ꢀ2014-06-12
revision:ꢀ3.1
approvedꢀby:ꢀAKDA
2
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-Module
F3L75R12W1H3_B27
外壳－散热器热阻
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink
每个ꢀIGBTꢀ/ꢀperꢀIGBT
λPasteꢀ=ꢀ1ꢀW/(m·K)ꢀꢀꢀ/ꢀꢀꢀꢀλgreaseꢀ=ꢀ1ꢀW/(m·K)
RthCH
Tvj op
0,45
K/W
°C
在开关状态下温度
Temperatureꢀunderꢀswitchingꢀconditions
-40
150
二极管,ꢀD1ꢀ/ꢀD4ꢀ/ꢀDiode,ꢀD1ꢀ/ꢀD4
最大额定值ꢀ/ꢀMaximumꢀRatedꢀValues
反向重复峰值电压
Tvj = 25°C
VRRM
IF
IFRM
I²t
ꢀ
ꢀ
ꢀ
ꢀ
1200
30
ꢀ
ꢀ
ꢀ
ꢀ
V
A
A
Repetitiveꢀpeakꢀreverseꢀvoltage
连续正向直流电流
ContinuousꢀDCꢀforwardꢀcurrent
正向重复峰值电流
Repetitiveꢀpeakꢀforwardꢀcurrent
tP = 1 ms
50
I2t-值
I²tꢀ-ꢀvalue
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
90,0
75,0
A²s
A²s
特征值ꢀ/ꢀCharacteristicꢀValues
min. typ. max.
正向电压
Forwardꢀvoltage
IF = 30 A, VGE = 0 V
IF = 30 A, VGE = 0 V
IF = 30 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
1,85 2,40
1,90
1,90
V
V
V
VF
IRM
Qr
反向恢复峰值电流
Peakꢀreverseꢀrecoveryꢀcurrent
IF = 30 A, - diF/dt = 2600 A/µs (Tvj=150°C) Tvj = 25°C
VR = 400 V
VGE = -15 V
72,0
80,0
82,0
A
A
A
Tvj = 125°C
Tvj = 150°C
恢复电荷
Recoveredꢀcharge
IF = 30 A, - diF/dt = 2600 A/µs (Tvj=150°C) Tvj = 25°C
VR = 400 V
VGE = -15 V
2,35
2,85
3,70
µC
µC
µC
Tvj = 125°C
Tvj = 150°C
反向恢复损耗（每脉冲）
Reverseꢀrecoveryꢀenergy
IF = 30 A, - diF/dt = 2600 A/µs (Tvj=150°C) Tvj = 25°C
0,80
1,30
1,35
mJ
mJ
mJ
VR = 400 V
VGE = -15 V
Tvj = 125°C
Tvj = 150°C
Erec
结－外壳热阻
Thermalꢀresistance,ꢀjunctionꢀtoꢀcase
每个二极管ꢀ/ꢀperꢀdiode
每个二极管ꢀ/ꢀperꢀdiode
RthJC
RthCH
Tvj op
0,95 1,05 K/W
外壳－散热器热阻
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink
0,85
K/W
°C
λPasteꢀ=ꢀ1ꢀW/(m·K)ꢀꢀꢀ/ꢀꢀꢀꢀλgreaseꢀ=ꢀ1ꢀW/(m·K)
在开关状态下温度
Temperatureꢀunderꢀswitchingꢀconditions
-40
150
preparedꢀby:ꢀCM
dateꢀofꢀpublication:ꢀ2014-06-12
revision:ꢀ3.1
approvedꢀby:ꢀAKDA
3
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-Module
F3L75R12W1H3_B27
IGBT,ꢀT2ꢀ/ꢀT3ꢀ/ꢀIGBT,ꢀT2ꢀ/ꢀT3
最大额定值ꢀ/ꢀMaximumꢀRatedꢀValues
集电极－发射极电压
Tvj = 25°C
VCES
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
650
ꢀ
ꢀ
ꢀ
V
Collector-emitterꢀvoltage
连续集电极直流电流
ContinuousꢀDCꢀcollectorꢀcurrent
TC = 80°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
IC nom
IC
30
45
A
A
集电极重复峰值电流
Repetitiveꢀpeakꢀcollectorꢀcurrent
tP = 1 ms
ICRM
Ptot
60
A
总功率损耗
Totalꢀpowerꢀdissipation
TC = 25°C, Tvj max = 175°C
150
ꢀ W
栅极－发射极峰值电压
Gate-emitterꢀpeakꢀvoltage
VGES
+/-20
ꢀ
V
特征值ꢀ/ꢀCharacteristicꢀValues
min. typ. max.
集电极－发射极饱和电压
Collector-emitterꢀsaturationꢀvoltage
IC = 30 A, VGE = 15 V
IC = 30 A, VGE = 15 V
IC = 30 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
1,55 2,00
1,70
1,80
V
V
V
VCE sat
栅极阈值电压
Gateꢀthresholdꢀvoltage
IC = 0,30 mA, VCE = VGE, Tvj = 25°C
VGE = -15 V ... +15 V
VGEth
QG
4,9
5,8
0,30
0,0
6,5
V
µC
Ω
栅极电荷
Gateꢀcharge
内部栅极电阻
Internalꢀgateꢀresistor
Tvj = 25°C
RGint
Cies
Cres
ICES
IGES
td on
输入电容
Inputꢀcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
VCE = 650 V, VGE = 0 V, Tvj = 25°C
VCE = 0 V, VGE = 20 V, Tvj = 25°C
1,65
0,051
nF
nF
反向传输电容
Reverseꢀtransferꢀcapacitance
集电极-发射极截止电流
Collector-emitterꢀcut-offꢀcurrent
1,0 mA
100 nA
栅极-发射极漏电流
Gate-emitterꢀleakageꢀcurrent
开通延迟时间(电感负载)
Turn-onꢀdelayꢀtime,ꢀinductiveꢀload
IC = 30 A, VCE = 400 V
VGE = 15 V
RGon = 10 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,022
0,025
0,025
µs
µs
µs
上升时间(电感负载)
Riseꢀtime,ꢀinductiveꢀload
IC = 30 A, VCE = 400 V
VGE = 15 V
RGon = 10 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,01
0,012
0,012
µs
µs
µs
tr
td off
tf
关断延迟时间(电感负载)
Turn-offꢀdelayꢀtime,ꢀinductiveꢀload
IC = 30 A, VCE = 400 V
VGE = 15 V
RGoff = 10 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,16
0,18
0,185
µs
µs
µs
下降时间(电感负载)
Fallꢀtime,ꢀinductiveꢀload
IC = 30 A, VCE = 400 V
VGE = 15 V
RGoff = 10 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,025
0,037
0,04
µs
µs
µs
开通损耗能量ꢀ(每脉冲)
Turn-onꢀenergyꢀlossꢀperꢀpulse
IC = 30 A, VCE = 400 V, LS = 40 nH
VGE = 15 V, di/dt = 2600 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 10 Ω
Tvj = 25°C
0,34
0,50
0,53
mJ
mJ
mJ
Eon
Eoff
Tvj = 150°C
关断损耗能量ꢀ(每脉冲）
Turn-offꢀenergyꢀlossꢀperꢀpulse
IC = 30 A, VCE = 400 V, LS = 40 nH
VGE = 15 V, du/dt = 4700 V/µs (Tvj = 150°C) Tvj = 125°C
RGoff = 10 Ω
Tvj = 25°C
0,85
1,15
1,20
mJ
mJ
mJ
Tvj = 150°C
短路数据
SCꢀdata
VGE ≤ 15 V, VCC = 360 V
VCEmax = VCES -LsCE ·di/dt
tP ≤ 8 µs, Tvj = 25°C
tP ≤ 6 µs, Tvj = 150°C
210
150
A
A
ISC
结－外壳热阻
Thermalꢀresistance,ꢀjunctionꢀtoꢀcase
每个ꢀIGBTꢀ/ꢀperꢀIGBT
每个ꢀIGBTꢀ/ꢀperꢀIGBT
RthJC
RthCH
Tvj op
0,90 1,00 K/W
外壳－散热器热阻
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink
0,85
K/W
°C
λPasteꢀ=ꢀ1ꢀW/(m·K)ꢀꢀꢀ/ꢀꢀꢀꢀλgreaseꢀ=ꢀ1ꢀW/(m·K)
在开关状态下温度
Temperatureꢀunderꢀswitchingꢀconditions
-40
150
preparedꢀby:ꢀCM
dateꢀofꢀpublication:ꢀ2014-06-12
revision:ꢀ3.1
approvedꢀby:ꢀAKDA
4
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-Module
F3L75R12W1H3_B27
二极管,ꢀD2ꢀ/ꢀD3ꢀ/ꢀDiode,ꢀD2ꢀ/ꢀD3
最大额定值ꢀ/ꢀMaximumꢀRatedꢀValues
反向重复峰值电压
Tvj = 25°C
VRRM
IF
IFRM
I²t
ꢀ
ꢀ
ꢀ
ꢀ
650
30
ꢀ
ꢀ
ꢀ
ꢀ
V
A
A
Repetitiveꢀpeakꢀreverseꢀvoltage
连续正向直流电流
ContinuousꢀDCꢀforwardꢀcurrent
正向重复峰值电流
Repetitiveꢀpeakꢀforwardꢀcurrent
tP = 1 ms
60
I2t-值
I²tꢀ-ꢀvalue
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
130
115
A²s
A²s
特征值ꢀ/ꢀCharacteristicꢀValues
min. typ. max.
正向电压
Forwardꢀvoltage
IF = 30 A, VGE = 0 V
IF = 30 A, VGE = 0 V
IF = 30 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
1,45 1,65
1,35
1,30
V
V
V
VF
IRM
Qr
反向恢复峰值电流
Peakꢀreverseꢀrecoveryꢀcurrent
IF = 30 A, - diF/dt = 2600 A/µs (Tvj=150°C) Tvj = 25°C
VR = 400 V
42,0
48,0
50,0
A
A
A
Tvj = 125°C
Tvj = 150°C
恢复电荷
Recoveredꢀcharge
IF = 30 A, - diF/dt = 2600 A/µs (Tvj=150°C) Tvj = 25°C
VR = 400 V
1,80
2,40
2,60
µC
µC
µC
Tvj = 125°C
Tvj = 150°C
反向恢复损耗（每脉冲）
Reverseꢀrecoveryꢀenergy
IF = 30 A, - diF/dt = 2600 A/µs (Tvj=150°C) Tvj = 25°C
0,45
0,65
0,73
mJ
mJ
mJ
VR = 400 V
Tvj = 125°C
Tvj = 150°C
Erec
结－外壳热阻
Thermalꢀresistance,ꢀjunctionꢀtoꢀcase
每个二极管ꢀ/ꢀperꢀdiode
每个二极管ꢀ/ꢀperꢀdiode
RthJC
RthCH
Tvj op
1,00 1,20 K/W
外壳－散热器热阻
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink
0,70
K/W
°C
λPasteꢀ=ꢀ1ꢀW/(m·K)ꢀꢀꢀ/ꢀꢀꢀꢀλgreaseꢀ=ꢀ1ꢀW/(m·K)
在开关状态下温度
Temperatureꢀunderꢀswitchingꢀconditions
-40
150
负温度系数热敏电阻ꢀ/ꢀNTC-Thermistor
特征值ꢀ/ꢀCharacteristicꢀValues
min. typ. max.
5,00
额定电阻值
Ratedꢀresistance
TC = 25°C
R25
∆R/R
P25
kΩ
R100ꢀꢀ偏差
DeviationꢀofꢀR100
TC = 100°C, R100 = 493 Ω
-5
5
%
耗散功率
Powerꢀdissipation
TC = 25°C
20,0 mW
B-值
B-value
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
B25/50
B25/80
B25/100
3375
3411
3433
K
K
K
B-值
B-value
B-值
B-value
根据应用手册标定
Specificationꢀaccordingꢀtoꢀtheꢀvalidꢀapplicationꢀnote.
preparedꢀby:ꢀCM
dateꢀofꢀpublication:ꢀ2014-06-12
revision:ꢀ3.1
approvedꢀby:ꢀAKDA
5
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-Module
F3L75R12W1H3_B27
模块ꢀ/ꢀModule
绝缘测试电压
Isolationꢀtestꢀvoltage
RMS, f = 50 Hz, t = 1 min.
VISOL
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
2,5
ꢀ kV
内部绝缘
Internalꢀisolation
基本绝缘ꢀꢀ(classꢀ1,ꢀIECꢀ61140)
basicꢀinsulationꢀ(classꢀ1,ꢀIECꢀ61140)
AI2O3
ꢀ
爬电距离
Creepageꢀdistance
端子至散热器ꢀ/ꢀterminalꢀtoꢀheatsink
端子至端子ꢀ/ꢀterminalꢀtoꢀterminal
11,5
6,3
ꢀ mm
ꢀ mm
ꢀ
电气间隙
Clearance
端子至散热器ꢀ/ꢀterminalꢀtoꢀheatsink
端子至端子ꢀ/ꢀterminalꢀtoꢀterminal
10,0
5,0
相对电痕指数
Comperativeꢀtrackingꢀindex
CTI
LsCE
> 200
min. typ. max.
杂散电感,模块
Strayꢀinductanceꢀmodule
30
nH
mΩ
°C
N
模块引线电阻,端子-芯片
Moduleꢀleadꢀresistance,ꢀterminalsꢀ-ꢀchip
RCC'+EE'
RAA'+CC'
5,00
6,00
TCꢀ=ꢀ25°C,ꢀ每个开关ꢀ/ꢀperꢀswitch
储存温度
Storageꢀtemperature
Tstg
F
-40
40
125
80
Anpresskraft für mech. Bef. pro Feder
mountig force per clamp
-
重量
Weight
G
24
g
Der Strom im Dauerbetrieb ist auf 25A effektiv pro Anschlusspin begrenzt.
The current under continuous operation is limited to 25A rms per connector pin.
preparedꢀby:ꢀCM
dateꢀofꢀpublication:ꢀ2014-06-12
revision:ꢀ3.1
approvedꢀby:ꢀAKDA
6
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-Module
F3L75R12W1H3_B27
输出特性ꢀIGBT,ꢀT1-T4ꢀ（典型)
输出特性ꢀIGBT,ꢀT1-T4ꢀ（典型)
outputꢀcharacteristicꢀIGBT,ꢀT1-T4ꢀ(typical)
outputꢀcharacteristicꢀIGBT,ꢀT1-T4ꢀ(typical)
ICꢀ=ꢀfꢀ(VCE
)
ICꢀ=ꢀfꢀ(VCE)
VGEꢀ=ꢀ15ꢀV
Tvjꢀ=ꢀ150°C
60
60
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
50
40
30
20
10
50
40
30
20
10
0
0
0,0
0,5
1,0
1,5
2,0
2,5
0,0
0,5
1,0
1,5
VCE [V]
2,0
2,5
3,0
VCE [V]
传输特性ꢀIGBT,ꢀT1-T4ꢀ(典型)
transferꢀcharacteristicꢀIGBT,ꢀT1-T4ꢀ(typical)
ICꢀ=ꢀfꢀ(VGE
开关损耗ꢀIGBT,ꢀT1-T4ꢀ（典型)
switchingꢀlossesꢀIGBT,ꢀT1-T4ꢀ(typical)
Eonꢀ=ꢀfꢀ(IC),ꢀEoffꢀ=ꢀfꢀ(IC)
)
VCEꢀ=ꢀ20ꢀV
VGEꢀ=ꢀ±15ꢀV,ꢀRGonꢀ=ꢀ6.8ꢀΩ,ꢀRGoffꢀ=ꢀ6.8ꢀΩ,ꢀVCEꢀ=ꢀ400ꢀV
60
3,0
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
50
40
30
20
10
2,5
2,0
1,5
1,0
0,5
0,0
0
5
6
7
8
9
10
0
10
20
30
40
50
60
VGE [V]
IC [A]
preparedꢀby:ꢀCM
dateꢀofꢀpublication:ꢀ2014-06-12
revision:ꢀ3.1
approvedꢀby:ꢀAKDA
7
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-Module
F3L75R12W1H3_B27
开关损耗ꢀIGBT,ꢀT1-T4ꢀ（典型)
switchingꢀlossesꢀIGBT,ꢀT1-T4ꢀ(typical)
Eonꢀ=ꢀfꢀ(RG),ꢀEoffꢀ=ꢀfꢀ(RG)
瞬态热阻抗ꢀIGBT,ꢀT1-T4ꢀ
transientꢀthermalꢀimpedanceꢀIGBT,ꢀT1-T4ꢀ
ZthJHꢀ=ꢀfꢀ(t)
VGEꢀ=ꢀ±15ꢀV,ꢀICꢀ=ꢀ30ꢀA,ꢀVCEꢀ=ꢀ400ꢀV
4,0
10
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
ZthJH : IGBT
3,0
2,0
1,0
0,0
1
i:
ri[K/W]: 0,032 0,062 0,312 0,543
τi[s]: 0,0005 0,005 0,05 0,2
1
2
3
4
0,1
0,001
0
10
20
30
40
50
60
70
0,01
0,1
t [s]
1
10
RG [Ω]
反偏安全工作区ꢀIGBT,ꢀT1-T4ꢀ（RBSOA）
reverseꢀbiasꢀsafeꢀoperatingꢀareaꢀIGBT,ꢀT1-T4ꢀ(RBSOA)
ICꢀ=ꢀfꢀ(VCE
正向偏压特性ꢀ二极管,ꢀD1ꢀ/ꢀD4ꢀ（典型)
forwardꢀcharacteristicꢀofꢀDiode,ꢀD1ꢀ/ꢀD4ꢀ(typical)
IFꢀ=ꢀfꢀ(VF)
)
VGEꢀ=ꢀ±15ꢀV,ꢀRGoffꢀ=ꢀ6.8ꢀΩ,ꢀTvjꢀ=ꢀ150°C
70
50
IC, Modul
IC, Chip
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
45
60
50
40
30
20
10
0
40
35
30
25
20
15
10
5
0
0
200
400
600
800
1000 1200 1400
0,0
0,5
1,0
1,5
VF [V]
2,0
2,5
3,0
VCE [V]
preparedꢀby:ꢀCM
dateꢀofꢀpublication:ꢀ2014-06-12
revision:ꢀ3.1
approvedꢀby:ꢀAKDA
8
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-Module
F3L75R12W1H3_B27
开关损耗ꢀ二极管,ꢀD1ꢀ/ꢀD4ꢀ（典型)
switchingꢀlossesꢀDiode,ꢀD1ꢀ/ꢀD4ꢀ(typical)
Erecꢀ=ꢀfꢀ(IF)
开关损耗ꢀ二极管,ꢀD1ꢀ/ꢀD4ꢀ（典型)
switchingꢀlossesꢀDiode,ꢀD1ꢀ/ꢀD4ꢀ(typical)
Erecꢀ=ꢀfꢀ(RG)
RGonꢀ=ꢀ10ꢀΩ,ꢀVCEꢀ=ꢀ400ꢀV
IFꢀ=ꢀ30ꢀA,ꢀVCEꢀ=ꢀ400ꢀV
2,0
1,6
Erec, Tvj = 125°C
Erec, Tvj = 150°C
Erec, Tvj = 125°C
Erec, Tvj = 150°C
1,4
1,8
1,6
1,4
1,2
1,0
0,8
0,6
0,4
0,2
0,0
1,2
1,0
0,8
0,6
0,4
0,2
0,0
0
5
10 15 20 25 30 35 40 45 50 55 60
0
10 20 30 40 50 60 70 80 90 100
RG [Ω]
IF [A]
瞬态热阻抗ꢀ二极管,ꢀD1ꢀ/ꢀD4ꢀ
transientꢀthermalꢀimpedanceꢀDiode,ꢀD1ꢀ/ꢀD4ꢀ
ZthJHꢀ=ꢀfꢀ(t)
输出特性ꢀIGBT,ꢀT2ꢀ/ꢀT3ꢀ（典型)
outputꢀcharacteristicꢀIGBT,ꢀT2ꢀ/ꢀT3ꢀ(typical)
ICꢀ=ꢀfꢀ(VCE
)
VGEꢀ=ꢀ15ꢀV
10
60
ZthJH: Diode
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
54
48
42
36
30
24
18
12
6
1
i:
ri[K/W]: 0,15
τi[s]: 0,0005 0,005 0,05 0,2
1
2
3
4
0,323 0,739 0,588
0,1
0,001
0
0,01
0,1
t [s]
1
10
0,0
0,5
1,0
1,5
VCE [V]
2,0
2,5
3,0
preparedꢀby:ꢀCM
dateꢀofꢀpublication:ꢀ2014-06-12
revision:ꢀ3.1
approvedꢀby:ꢀAKDA
9
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-Module
F3L75R12W1H3_B27
输出特性ꢀIGBT,ꢀT2ꢀ/ꢀT3ꢀ（典型)
传输特性ꢀIGBT,ꢀT2ꢀ/ꢀT3ꢀ(典型)
outputꢀcharacteristicꢀIGBT,ꢀT2ꢀ/ꢀT3ꢀ(typical)
transferꢀcharacteristicꢀIGBT,ꢀT2ꢀ/ꢀT3ꢀ(typical)
ICꢀ=ꢀfꢀ(VCE
)
ICꢀ=ꢀfꢀ(VGE)
Tvjꢀ=ꢀ150°C
VCEꢀ=ꢀ20ꢀV
60
60
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
54
48
42
36
30
24
18
12
6
54
48
42
36
30
24
18
12
6
0
0
5
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
6
7
8
9
10
11
12
VCE [V]
VGE [V]
开关损耗ꢀIGBT,ꢀT2ꢀ/ꢀT3ꢀ（典型)
开关损耗ꢀIGBT,ꢀT2ꢀ/ꢀT3ꢀ（典型)
switchingꢀlossesꢀIGBT,ꢀT2ꢀ/ꢀT3ꢀ(typical)
Eonꢀ=ꢀfꢀ(IC),ꢀEoffꢀ=ꢀfꢀ(IC)
switchingꢀlossesꢀIGBT,ꢀT2ꢀ/ꢀT3ꢀ(typical)
Eonꢀ=ꢀfꢀ(RG),ꢀEoffꢀ=ꢀfꢀ(RG)
VGEꢀ=ꢀ±15ꢀV,ꢀRGonꢀ=ꢀ10ꢀΩ,ꢀRGoffꢀ=ꢀ10ꢀΩ,ꢀVCEꢀ=ꢀ400ꢀV
VGEꢀ=ꢀ±15ꢀV,ꢀICꢀ=ꢀ30ꢀA,ꢀVCEꢀ=ꢀ400ꢀV
2,5
4,0
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
2,0
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
1,5
1,0
0,5
0,0
0
10
20
30
IC [A]
40
50
60
0
10 20 30 40 50 60 70 80 90 100
RG [Ω]
preparedꢀby:ꢀCM
dateꢀofꢀpublication:ꢀ2014-06-12
revision:ꢀ3.1
approvedꢀby:ꢀAKDA
10
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-Module
F3L75R12W1H3_B27
瞬态热阻抗ꢀIGBT,ꢀT2ꢀ/ꢀT3ꢀ
transientꢀthermalꢀimpedanceꢀIGBT,ꢀT2ꢀ/ꢀT3ꢀ
ZthJHꢀ=ꢀfꢀ(t)
反偏安全工作区ꢀIGBT,ꢀT2ꢀ/ꢀT3ꢀ（RBSOA）
reverseꢀbiasꢀsafeꢀoperatingꢀareaꢀIGBT,ꢀT2ꢀ/ꢀT3ꢀ(RBSOA)
ICꢀ=ꢀfꢀ(VCE
)
VGEꢀ=ꢀ±15ꢀV,ꢀRGoffꢀ=ꢀ10ꢀΩ,ꢀTvjꢀ=ꢀ150°C
10
70
ZthJH: IGBT
IC, Modul
IC, Chip
60
50
40
30
20
10
0
1
i:
1
2
3
4
ri[K/W]: 0,142 0,309 0,719 0,58
τi[s]:
0,0005 0,005 0,05 0,2
0,1
0,001
0,01
0,1
t [s]
1
10
0
100
200
300
400
500
600
700
VCE [V]
正向偏压特性ꢀ二极管,ꢀD2ꢀ/ꢀD3ꢀ（典型)
开关损耗ꢀ二极管,ꢀD2ꢀ/ꢀD3ꢀ（典型)
forwardꢀcharacteristicꢀofꢀDiode,ꢀD2ꢀ/ꢀD3ꢀ(typical)
IFꢀ=ꢀfꢀ(VF)
switchingꢀlossesꢀDiode,ꢀD2ꢀ/ꢀD3ꢀ(typical)
Erecꢀ=ꢀfꢀ(IF)
RGonꢀ=ꢀ6.8ꢀΩ,ꢀVCEꢀ=ꢀ400ꢀV
60
1,00
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Erec, Tvj = 125°C
Erec, Tvj = 150°C
55
50
45
40
35
30
25
20
15
10
5
0,90
0,80
0,70
0,60
0,50
0,40
0,30
0,20
0,10
0,00
0
0,0
0,5
1,0
VF [V]
1,5
2,0
0
10
20
30
IF [A]
40
50
60
preparedꢀby:ꢀCM
dateꢀofꢀpublication:ꢀ2014-06-12
revision:ꢀ3.1
approvedꢀby:ꢀAKDA
11
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-Module
F3L75R12W1H3_B27
开关损耗ꢀ二极管,ꢀD2ꢀ/ꢀD3ꢀ（典型)
switchingꢀlossesꢀDiode,ꢀD2ꢀ/ꢀD3ꢀ(typical)
Erecꢀ=ꢀfꢀ(RG)
瞬态热阻抗ꢀ二极管,ꢀD2ꢀ/ꢀD3ꢀ
transientꢀthermalꢀimpedanceꢀDiode,ꢀD2ꢀ/ꢀD3ꢀ
ZthJHꢀ=ꢀfꢀ(t)
IFꢀ=ꢀ30ꢀA,ꢀVCEꢀ=ꢀ400ꢀV
0,90
10
Erec, Tvj = 125°C
ZthJH: Diode
Erec, Tvj = 150°C
0,80
0,70
0,60
0,50
0,40
0,30
0,20
0,10
0,00
1
i:
1
2
0,3
3
4
ri[K/W]: 0,25
τi[s]:
0,5 0,65
0,0005 0,005 0,05 0,2
0,1
0,001
0
10
20
30
RG [Ω]
40
50
60
0,01
0,1
t [s]
1
10
负温度系数热敏电阻ꢀ温度特性
NTC-Thermistor-temperatureꢀcharacteristicꢀ(typical)
Rꢀ=ꢀfꢀ(T)
100000
Rtyp
10000
1000
100
0
20
40
60
80
TC [°C]
100 120 140 160
preparedꢀby:ꢀCM
dateꢀofꢀpublication:ꢀ2014-06-12
revision:ꢀ3.1
approvedꢀby:ꢀAKDA
12
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-Module
F3L75R12W1H3_B27
接线图ꢀ/ꢀcircuit_diagram_headline
J
封装尺寸ꢀ/ꢀpackageꢀoutlines
Infineon
preparedꢀby:ꢀCM
dateꢀofꢀpublication:ꢀ2014-06-12
revision:ꢀ3.1
approvedꢀby:ꢀAKDA
13
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-Module
F3L75R12W1H3_B27
使用条件和条款
ꢀ
使用条件和条款
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application.
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exclusivelyꢀpursuantꢀtheꢀtermsꢀandꢀconditionsꢀofꢀtheꢀsupplyꢀagreement.ꢀThereꢀwillꢀbeꢀnoꢀguaranteeꢀofꢀanyꢀkindꢀforꢀtheꢀproductꢀandꢀits
characteristics.ꢀTheꢀinformationꢀinꢀtheꢀvalidꢀapplication-ꢀandꢀassemblyꢀnotesꢀofꢀtheꢀmoduleꢀmustꢀbeꢀconsidered.
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ourꢀproduct,ꢀpleaseꢀcontactꢀtheꢀsalesꢀoffice,ꢀwhichꢀisꢀresponsibleꢀforꢀyouꢀ(ꢀseeꢀꢀwww.infineon.comꢀ).ꢀForꢀthoseꢀthatꢀareꢀspecifically
interestedꢀweꢀmayꢀprovideꢀapplicationꢀnotes.
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ShouldꢀyouꢀintendꢀtoꢀuseꢀtheꢀProductꢀinꢀaviationꢀapplications,ꢀinꢀhealthꢀorꢀliveꢀendangeringꢀorꢀlifeꢀsupportꢀapplications,ꢀpleaseꢀnotify.ꢀPlease
note,ꢀthatꢀforꢀanyꢀsuchꢀapplicationsꢀweꢀurgentlyꢀrecommend
-ꢀtoꢀperformꢀjointꢀRiskꢀandꢀQualityꢀAssessments;
-ꢀtheꢀconclusionꢀofꢀQualityꢀAgreements;
-ꢀtoꢀestablishꢀjointꢀmeasuresꢀofꢀanꢀongoingꢀproductꢀsurvey,ꢀandꢀthatꢀweꢀmayꢀmakeꢀdeliveryꢀdependedꢀon
theꢀrealizationꢀofꢀanyꢀsuchꢀmeasures.
Ifꢀandꢀtoꢀtheꢀextentꢀnecessary,ꢀpleaseꢀforwardꢀequivalentꢀnoticesꢀtoꢀyourꢀcustomers.
Changesꢀofꢀthisꢀproductꢀdataꢀsheetꢀareꢀreserved.
preparedꢀby:ꢀCM
dateꢀofꢀpublication:ꢀ2014-06-12
revision:ꢀ3.1
approvedꢀby:ꢀAKDA
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