ESD5V0H1U02LSE6327XTSA1 [INFINEON]
Trans Voltage Suppressor Diode, 5V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, TSSLP-2-1, 2 PIN;![ESD5V0H1U02LSE6327XTSA1](http://pdffile.icpdf.com/pdf2/p00275/img/icpdf/ESD5V0H1U02L_1646269_icpdf.jpg)
型号: | ESD5V0H1U02LSE6327XTSA1 |
厂家: | ![]() |
描述: | Trans Voltage Suppressor Diode, 5V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, TSSLP-2-1, 2 PIN 局域网 二极管 |
文件: | 总7页 (文件大小:623K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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ESD5V0H1U-02LS
Ultra-Low Capacitance TVS Diode
• Avalanche diode with low clamping / trigger
voltage designed for replacement of polymer
suppressor devices
• ESD / transient protection of high-speed
data lines exceeding
IEC61000-4-2 (ESD): 16 kV (contact)
IEC61000-4-4 (EFT): 2.5 kV / 50 A (5/50 ns)
• No degradation or shifting of characteristics even
after 1000 ESD pulses and lower peak voltage
than polymer devices
(see curve on page 4)
• Very low capacitance: 0.2 pF typ. @ 1.8 GHz
• Smallest form factor: 0.6 x 0.3 x 0.3 mm
• Working voltage: 5 V (can be extended to 60 V)
• Response time typ. < 0.5 ns @ 8 kV
• Pb-free (RoHS) compliant) package
Applications
• 10/100/1000 Ethernet
• HDMI & DVI Interfaces
• Mobile communication and LCD displays
• Consumer products ( STB, MP3, DVD, DSC...)
• Notebooks and desktop computers, peripherals
ESD5V0H1U-02LS
1
2
Type
ESD5V0H1U-02LS
Package
TSSLP-2-1
Configuration
1 line, uni-directional
Marking
P
2011-06-17
1
ESD5V0H1U-02LS
Maximum Ratings at T = 25°C, unless otherwise specified
Parameter
ESD contact discharge
Symbol
V
ESD
Value
16
Unit
kV
1)
°C
Operating temperature range
Storage temperature
T
-55...125
-65...150
op
T
stg
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
Unit
min.
typ. max.
Characteristics
-
-
-
5
-
V
Reverse working voltage
Avalanche breakdown voltage
V
V
RWM
(BR)
200
I
= 1 mA, from pin 2 to 1
(BR)
-
-
-
0.1 µA
Reverse current
V = 5 V
Clamping voltage after 30 ns
I
R
R
1)
40
-
V
V
CL
V
= 8 kV, contact, from pin 2 to 1
ESD
2)
pF
Line capacitance
C
T
V = 0 V, f = 1.8 GHz
-
-
0.2
0.27
0.4
0.42
R
V = 0 V, f = 1 MHz
R
Series inductance
L
-
0.2
-
nH
S
1
V
according to IEC61000-4-2
ESD
2
Total capacitance line to ground
2011-06-17
2
ESD5V0H1U-02LS
Reverse current I = ƒ (T )
Diode capacitance C = ƒ (V )
T R
R
A
V = 5 V
f = 1GHz
R
10 -6
VR
0.4
10 -7
10 -8
pF
10 -9
0.2
0.1
10 -10
10 -11
10 -12
10 -13
0
0
0
°C
V
25
50
75
100
150
5
10
15
20
25
30
40
T
V
R
A
Line capacitance C = ƒ (f)
T
V = 0 V
R
0.4
pF
0.2
0.1
0
0
MHz
500
1000
1500
2000
3000
f
2011-06-17
3
ESD5V0H1U-02LS
Application example
single channel, uni-directional
Connector
Protected signal line
I/O
ESD
1
2
sensitive
device
The protection diode
should be placed very
close to the location
where the ESD can
occur to keep loops and
inductances as small as
possible.
2011-06-17
4
ESD5V0H1U-02LS
Clamping voltage at real ESD event according to IEC61000-4-2, 8 kV
contact discharge: comparison with polymer suppressor.
ESD gun: C=150pF/R=330Ω... with 6 GHz oscilloscope (50Ω)
2011-06-17
5
Package TSSLP-2-1
ESD5V0H1U-02LS
2011-06-17
6
ESD5V0H1U-02LS
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
2011-06-17
7
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