ESD5V0H1U02LSE6327XTSA1 [INFINEON]

Trans Voltage Suppressor Diode, 5V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, TSSLP-2-1, 2 PIN;
ESD5V0H1U02LSE6327XTSA1
型号: ESD5V0H1U02LSE6327XTSA1
厂家: Infineon    Infineon
描述:

Trans Voltage Suppressor Diode, 5V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, TSSLP-2-1, 2 PIN

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ESD5V0H1U-02LS  
Ultra-Low Capacitance TVS Diode  
Avalanche diode with low clamping / trigger  
voltage designed for replacement of polymer  
suppressor devices  
ESD / transient protection of high-speed  
data lines exceeding  
IEC61000-4-2 (ESD): 16 kV (contact)  
IEC61000-4-4 (EFT): 2.5 kV / 50 A (5/50 ns)  
No degradation or shifting of characteristics even  
after 1000 ESD pulses and lower peak voltage  
than polymer devices  
(see curve on page 4)  
Very low capacitance: 0.2 pF typ. @ 1.8 GHz  
Smallest form factor: 0.6 x 0.3 x 0.3 mm  
Working voltage: 5 V (can be extended to 60 V)  
Response time typ. < 0.5 ns @ 8 kV  
Pb-free (RoHS) compliant) package  
Applications  
10/100/1000 Ethernet  
HDMI & DVI Interfaces  
Mobile communication and LCD displays  
Consumer products ( STB, MP3, DVD, DSC...)  
Notebooks and desktop computers, peripherals  
ESD5V0H1U-02LS  
1
2
Type  
ESD5V0H1U-02LS  
Package  
TSSLP-2-1  
Configuration  
1 line, uni-directional  
Marking  
P
2011-06-17  
1
ESD5V0H1U-02LS  
Maximum Ratings at T = 25°C, unless otherwise specified  
A
Parameter  
ESD contact discharge  
Symbol  
V
ESD  
Value  
16  
Unit  
kV  
1)  
°C  
Operating temperature range  
Storage temperature  
T
-55...125  
-65...150  
op  
T
stg  
Electrical Characteristics at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
Unit  
min.  
typ. max.  
Characteristics  
-
-
-
5
-
V
Reverse working voltage  
Avalanche breakdown voltage  
V
V
RWM  
(BR)  
200  
I
= 1 mA, from pin 2 to 1  
(BR)  
-
-
-
0.1 µA  
Reverse current  
V = 5 V  
Clamping voltage after 30 ns  
I
R
R
1)  
40  
-
V
V
CL  
V
= 8 kV, contact, from pin 2 to 1  
ESD  
2)  
pF  
Line capacitance  
C
T
V = 0 V, f = 1.8 GHz  
-
-
0.2  
0.27  
0.4  
0.42  
R
V = 0 V, f = 1 MHz  
R
Series inductance  
L
-
0.2  
-
nH  
S
1
V
according to IEC61000-4-2  
ESD  
2
Total capacitance line to ground  
2011-06-17  
2
ESD5V0H1U-02LS  
Reverse current I = ƒ (T )  
Diode capacitance C = ƒ (V )  
T R  
R
A
V = 5 V  
f = 1GHz  
R
10 -6  
VR  
0.4  
10 -7  
10 -8  
pF  
10 -9  
0.2  
0.1  
10 -10  
10 -11  
10 -12  
10 -13  
0
0
0
°C  
V
25  
50  
75  
100  
150  
5
10  
15  
20  
25  
30  
40  
T
V
R
A
Line capacitance C = ƒ (f)  
T
V = 0 V  
R
0.4  
pF  
0.2  
0.1  
0
0
MHz  
500  
1000  
1500  
2000  
3000  
f
2011-06-17  
3
ESD5V0H1U-02LS  
Application example  
single channel, uni-directional  
Connector  
Protected signal line  
I/O  
ESD  
1
2
sensitive  
device  
The protection diode  
should be placed very  
close to the location  
where the ESD can  
occur to keep loops and  
inductances as small as  
possible.  
2011-06-17  
4
ESD5V0H1U-02LS  
Clamping voltage at real ESD event according to IEC61000-4-2, 8 kV  
contact discharge: comparison with polymer suppressor.  
ESD gun: C=150pF/R=330... with 6 GHz oscilloscope (50)  
2011-06-17  
5
Package TSSLP-2-1  
ESD5V0H1U-02LS  
2011-06-17  
6
ESD5V0H1U-02LS  
Edition 2009-11-16  
Published by  
Infineon Technologies AG  
81726 Munich, Germany  
2009 Infineon Technologies AG  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee  
of conditions or characteristics. With respect to any examples or hints given herein,  
any typical values stated herein and/or any information regarding the application of  
the device, Infineon Technologies hereby disclaims any and all warranties and  
liabilities of any kind, including without limitation, warranties of non-infringement of  
intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices,  
please contact the nearest Infineon Technologies Office (<www.infineon.com>).  
Warnings  
Due to technical requirements, components may contain dangerous substances.  
For information on the types in question, please contact the nearest Infineon  
Technologies Office.  
Infineon Technologies components may be used in life-support devices or systems  
only with the express written approval of Infineon Technologies, if a failure of such  
components can reasonably be expected to cause the failure of that life-support  
device or system or to affect the safety or effectiveness of that device or system.  
Life support devices or systems are intended to be implanted in the human body or  
to support and/or maintain and sustain and/or protect human life. If they fail, it is  
reasonable to assume that the health of the user or other persons may be  
endangered.  
2011-06-17  
7

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