ESD5V0L1B-02V [INFINEON]

Transient Voltage Suppressor Diodes; 瞬态电压抑制二极管
ESD5V0L1B-02V
型号: ESD5V0L1B-02V
厂家: Infineon    Infineon
描述:

Transient Voltage Suppressor Diodes
瞬态电压抑制二极管

二极管
文件: 总18页 (文件大小:1158K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TVS Diodes  
Transient Voltage Suppressor Diodes  
ESD5V0L1B-02V  
Bi-directional Low Capacitance TVS Diode  
ESD5V0L1B-02V  
Data Sheet  
Revision 1.0, 2010-12-16  
Final  
Industrial and Multi-Market  
Edition 2010-12-16  
Published by  
Infineon Technologies AG  
81726 Munich, Germany  
© 2010 Infineon Technologies AG  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee of conditions or  
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any  
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties  
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights  
of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices, please contact the nearest  
Infineon Technologies Office (www.infineon.com).  
Warnings  
Due to technical requirements, components may contain dangerous substances. For information on the types in  
question, please contact the nearest Infineon Technologies Office.  
Infineon Technologies components may be used in life-support devices or systems only with the express written  
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure  
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support  
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain  
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may  
be endangered.  
ESD5V0L1B-02V  
Revision History  
Page or Item  
Subjects (major changes since previous revision)  
Revision 1.0, 2010-12-16  
Trademarks of Infineon Technologies AG  
AURIX™, BlueMoon™, C166™, CanPAK™, CIPOS™, CIPURSE™, COMNEON™, EconoPACK™, CoolMOS™,  
CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,  
EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™,  
MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PRIMARION™,  
PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™,  
SINDRION™, SIPMOS™, SMARTi™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™,  
TRENCHSTOP™, TriCore™, X-GOLD™, X-PMU™, XMM™, XPOSYS™.  
Other Trademarks  
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,  
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR  
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,  
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.  
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of  
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data  
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of  
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics  
Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™  
of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc.,  
OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc.  
RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc.  
SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden  
Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA.  
UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™  
of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of  
Diodes Zetex Limited.  
Last Trademarks Update 2010-10-26  
Final Data Sheet  
3
Revision 1.0, 2010-12-16  
ESD5V0L1B-02V  
Table of Contents  
Table of Contents  
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
1
1.1  
1.2  
Bi-directional Low Capacitance TVS Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Application Examples . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
2
Product Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
3
3.1  
3.2  
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Electrical Characteristics at TA=25°C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Typical Performance characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . 10  
4
5
Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
6
Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
6.1  
PG-SC79-2-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
7
Date Code Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
Terminology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17  
Final Data Sheet  
4
Revision 1.0, 2010-12-16  
ESD5V0L1B-02V  
List of Figures  
List of Figures  
Figure 1  
Figure 2  
Figure 3  
Figure 4  
Figure 5  
Figure 6  
Figure 7  
Figure 8  
Figure 9  
Pin configuration and schematic diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Definitions of electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Capacitance characteristics: CL = f(VR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Reverse characteristics: IR = f(VR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Reverse TLP characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Forward TLP characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Power derating curve: PPK = f(TA). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Single Chanel, uni-directional TVS protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Ordering Information Scheme. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Figure 10 PG-SC79-2-1: Package Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Figure 11 PG-SC79-2-1: Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Figure 12 PG-SC79-2-1: Packing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Figure 13 PG-SC79-2-1: Marking (example) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Figure 14 Date Code marking for Discrete packages with one digit (SCD8, SC79, SC751)) CES-Code . . . . 16  
Final Data Sheet  
5
Revision 1.0, 2010-12-16  
ESD5V0L1B-02V  
List of Tables  
List of Tables  
Table 1  
Table 2  
Table 3  
Table 4  
Table 5  
Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Maximum Rating at TA = 25 °C, unless otherwise specified. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
DC characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
RF characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
ESD characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Final Data Sheet  
6
Revision 1.0, 2010-12-16  
ESD5V0L1B-02V  
Bi-directional Low Capacitance TVS Diode  
1
Bi-directional Low Capacitance TVS Diode  
1.1  
Features  
ESD / transient protection according to:  
– IEC61000-4-2 (ESD): ±25 kV (contact)  
– IEC61000-4-4 (EFT): 40 A (5/50 ns)  
– IEC61000-4-5 (surge): 2.5 A (8/20 µs)  
Max.working voltage: VRWM = ±5 V  
Ultra low dynamic resistance: Rdyn = 0.3  
Low capacitance: CL= 8.5 pf typ.  
Very low reverse current: IR = 1 nA typ.  
Pb-free (RoHS compliant) and halogeen free package  
Qualified according AEC Q101  
1.2  
Application Examples  
Cellular handsets, portable devices, notebooks and computers  
Digital cameras, power supplies and audio / video equipment, accessories  
2
Product Description  
Pin 2  
Pin 1  
Pin 2  
Pin 1  
PG-SC79-2-1  
a) Pin configuration  
b) Schematic diagram  
PG-SC79-2-1_PinConf_and_SchematicDiag.vsd  
Figure 1  
Pin configuration and schematic diagram  
Ordering information  
Table 1  
Type  
Package  
Configuration  
Marking code  
ESD5V0L1B-02V  
PG-SC79-2-1  
1 channel, bi-directional1 channel, bi-directional  
I
Final Data Sheet  
7
Revision 1.0, 2010-12-16  
ESD5V0L1B-02V  
Characteristics  
3
Characteristics  
Table 2  
Maximum Rating at TA = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Values  
Unit  
Min.  
-25  
Typ.  
Max.  
25  
ESD contact discharge1)  
Peak pulse current (tp = 8/20 µs)2) IPP  
VESD  
kV  
A
-2.5  
-55  
2.5  
Operating temperature range  
TOP  
Tstg  
125  
150  
°C  
°C  
Storage temperature  
-65  
1) VESD according to IEC61000-4-2  
2) IPP according to IEC61000-4-5  
3.1  
Electrical Characteristics at TA=25°C, unless otherwise specified  
R
dyn … Differential series resistance  
VBR … Breakdown voltage( IBR = 1mA typ.)  
… Reverse working voltage maximum  
I
VRWM  
IPP  
V
CL… Clamping voltage  
… Peak pulse current( =8/20µs typ.)  
tP  
IPP  
Rdyn  
IBR  
IRWM  
IBR  
VBR  
VCL  
VRWM  
VRWM VBR VCL  
V
IRWM  
Pin 2  
Rdyn  
V
IPP  
I
Pin 1  
Diode_Characteristic_Curve_Bi-directional.vsd  
Figure 2  
Definitions of electrical characteristics  
Table 3  
DC characteristics at TA = 25 °C, unless otherwise specified  
Symbol Values  
Typ.  
Parameter  
Unit  
Note /  
Test Condition  
Min.  
Max.  
5
Reverse working voltage VRWM  
7
V
Breakdown voltage  
Reverse current  
VBR  
IR  
V
IR = 1 mA  
VR = 3 V  
1  
50  
nA  
Final Data Sheet  
8
Revision 1.0, 2010-12-16  
ESD5V0L1B-02V  
Characteristics  
Table 4  
RF characteristics at TA = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Values  
Typ.  
8.5  
Unit  
Note /  
Test Condition  
Min.  
Max.  
Diode capacitance  
CL  
13  
pF  
VR = 0 V, f = 1 MHz  
Table 5  
ESD characteristics at TA = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Values  
Typ.  
Unit  
Note /  
Test Condition  
Min.  
Max.  
Clamping voltage1)  
Clamping voltage1)  
Clamping voltage1)  
Clamping voltage1)  
Dynamic resistance1)  
VCL  
VCL  
VCL  
VCL  
RDYN  
17  
20  
22  
25  
0.3  
V
V
V
V
I
pp = 5 A,  
tp = 30 ns, pin 1-2  
pp = 5 A,  
tp = 30 ns, pin 2-1  
pp = 16 A,  
tp = 30 ns, pin 1-2  
pp = 16 A,  
I
I
I
tp = 30 ns, pin 2-1  
tp =30 ns  
1) According TLP tests. Please refer to Application Note AN-210  
Final Data Sheet  
9
Revision 1.0, 2010-12-16  
ESD5V0L1B-02V  
Characteristics  
3.2  
Typical Performance characteristics at TA = 25 °C, unless otherwise specified  
10  
9
8
7
6
5
0
1
2
3
4
5
V
[V]  
R
Figure 3  
Capacitance characteristics: CL = f(VR)  
-7  
-8  
-9  
10  
10  
10  
-10  
10  
75  
100  
125  
150  
T
[°C]  
A
Figure 4  
Reverse characteristics: IR = f(VR)  
Final Data Sheet  
10  
Revision 1.0, 2010-12-16  
ESD5V0L1B-02V  
Characteristics  
70  
60  
50  
40  
30  
20  
10  
0
35  
30  
25  
20  
15  
10  
5
ESD5V0L1B-02V Pin 1 to 2  
R
dyn  
R
=0.4Ω  
dyn  
0
0
5
10 15 20 25 30 35 40  
[V]  
V
TLP  
Figure 5  
Reverse TLP characteristics  
70  
35  
30  
25  
20  
15  
10  
5
ESD5V0L1B-02V - Pin 2 to 1  
R
dyn  
60  
50  
40  
30  
20  
10  
0
R
=0.2Ω  
dyn  
0
0
5
10 15 20 25 30 35 40  
[V]  
V
TLP  
Figure 6  
Forward TLP characteristics  
Final Data Sheet  
11  
Revision 1.0, 2010-12-16  
ESD5V0L1B-02V  
Characteristics  
120  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
0
25  
50  
75  
100  
125  
150  
T
[°C]  
A
Figure 7  
Power derating curve: PPK = f(TA)  
Final Data Sheet  
12  
Revision 1.0, 2010-12-16  
ESD5V0L1B-02V  
Application Information  
4
Application Information  
Protected Data line with signal levels  
-VRWM to +VRWM (bi-directional)  
ESD  
sensitive  
device  
I/O  
1
The protection diode should be placed very  
close to the location where the ESD or other  
transients can occur to keep loops and  
inductances as small as possible .  
Pin 1 (or pin 2) should be connected directly  
to the data line and Pin 2 (or pin 1) should be  
connected directly to a ground plane on the  
board .  
2
Application_ESD5V0L1B-02V.vsd  
Figure 8  
Single Chanel, uni-directional TVS protection  
Final Data Sheet  
13  
Revision 1.0, 2010-12-16  
ESD5V0L1B-02V  
Ordering information scheme  
5
Ordering information scheme  
ESD 0P1 RF - XX YY  
Package  
XX = Pin number (i.e.: 02 = 2 pins; 03 = 3 pins)  
YY = Package family:  
LS = TSSLP  
LRH = TSLP  
For Radio Frequency Applications  
Line Capacitance CL in pF: (i.e.: 0P1 = 0.1pF)  
ESD 5V3 U n U - XX YY  
Package or Application  
XX = Pin number (i.e.: 02 = 2 pins; 03 = 3 pins)  
YY = Package family:  
LS = TSSLP  
LRH = TSLP  
S = SOT363  
U = SC74  
XX = Application family:  
LC = Low Clamp  
HDMI  
Uni- / Bi-directional or Rail to Rail protection  
Number of protected lines(i.e.: 1 = 1 line; 4 = 4 lines)  
Capacitance: Standard (>10pF), Low (<10pF), Ultra-low (<1pF)  
Maximum working voltage VRWM in V: (i.e.: 5V3 = 5.3V)  
Figure 9  
Ordering Information Scheme  
Final Data Sheet  
14  
Revision 1.0, 2010-12-16  
ESD5V0L1B-02V  
Package Information  
6
Package Information  
6.1  
PG-SC79-2-1  
M
0ꢀ2  
A
+0ꢀ0ꢁ  
-0ꢀ03  
0ꢀ.  
0ꢀ.3  
0ꢀ8  
A
2
Cathode  
marking  
.
0ꢀ3  
0ꢀ0ꢁ  
0ꢀ0ꢂ  
0ꢀꢁꢁ  
SC79-PO V02  
Figure 10 PG-SC79-2-1: Package Overview  
0ꢀ3ꢁ  
SC79-FP V02  
Figure 11 PG-SC79-2-1: Footprint  
Standard  
Reel with 2 mm Pitch  
2
0ꢀ2  
0ꢀꢂ  
0ꢀ66  
Cathode  
marking  
Cathode  
marking  
0ꢀ93  
SC79-TP V0ꢁ  
Figure 12 PG-SC79-2-1: Packing  
Figure 13 PG-SC79-2-1: Marking (example)  
Final Data Sheet  
15  
Revision 1.0, 2010-12-16  
ESD5V0L1B-02V  
Date Code Marking  
7
Date Code Marking1)  
one digit (SCD80, SC79, SC751)) CES-Code  
Month 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014  
01  
02  
03  
04  
05  
06  
07  
08  
09  
10  
11  
12  
a
b
c
d
e
f
p
q
r
A
B
C
D
E
F
G
H
J
P
Q
R
S
T
U
V
X
Y
Z
4
a
b
c
d
e
f
p
q
r
A
B
C
D
E
F
G
H
J
P
Q
R
S
T
U
V
X
Y
Z
4
a
b
c
d
e
f
p
q
r
A
B
C
D
E
F
G
H
J
P
Q
R
S
T
U
V
X
Y
Z
4
s
t
s
t
s
t
u
v
x
y
z
2
3
u
v
x
y
z
2
3
u
v
x
y
z
2
3
g
h
j
g
h
j
g
h
j
k
l
K
L
k
l
K
L
k
l
K
L
n
N
5
n
N
5
n
N
5
Figure 14 Date Code marking for Discrete packages with one digit (SCD8, SC79, SC751)) CES-Code  
1) New Marking Layout for SC75, implemented at October 2005  
Final Data Sheet  
16  
Revision 1.0, 2010-12-16  
ESD5V0L1B-02V  
Terminology  
Terminology  
CL  
Line capacitance  
EFT  
ESD  
IPP  
Electrical Fast Transient  
Electrostatic Discharge  
Peak pulse current  
IR  
Reverse current  
RoHs  
TA  
Restriction of Hazardous Substance Directive  
Ambient Temperature  
Operation temperature  
Pulse duration  
TOP  
tp  
Tstg  
VCL  
VESD  
VR  
Storage temperature  
Reverse clamping voltage  
Electrostatic discharge voltage  
Reverse voltage  
VRWM  
VBR  
RDYN  
Reverse working voltage maximum  
Breakdown voltage  
Dynamic resistance  
Final Data Sheet  
17  
Revision 1.0, 2010-12-16  
w w w . i n f i n e o n . c o m  
Published by Infineon Technologies AG  

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Trans Voltage Suppressor Diode, 200W, 5V V(RWM), Unidirectional, 4 Element, Silicon, PLASTIC PACKAGE-5
MCC

ESD5V0L4-TP-HF

暂无描述
MCC

ESD5V0M5

5 Volts ESD Protection Device
MCC

ESD5V0M5-T

暂无描述
MCC

ESD5V0M5-TP

5 Volts ESD Protection Device
MCC

ESD5V0M5_11

5 Volts ESD Protection Device
MCC

ESD5V0S

Silicon TVS Diodes
INFINEON

ESD5V0S1U-03W

Silicon TVS Diodes
INFINEON

ESD5V0S1U03WE6327HTSA1

Trans Voltage Suppressor Diode, 600W, 5V V(RWM), Unidirectional, 1 Element, Silicon, ROHC COMPLIANT PACKAGE-2
INFINEON

ESD5V0S2U-06

Silicon TVS Diodes
INFINEON

ESD5V0S2U06E6327HTSA1

Trans Voltage Suppressor Diode, 600W, 5V V(RWM), Unidirectional, 2 Element, Silicon, ROHC COMPLIANT PACKAGE-3
INFINEON