BTM7741G [INFINEON]
TrilithIC; TrilithIC
| 型号： | BTM7741G |
| 厂家： | 
Infineon |
| 描述： | TrilithIC |
| 文件： | 总18页 (文件大小：326K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet, Rev. 1.0, May 2007
BTM7741G
TrilithIC
Automotive Power
BTM7741G
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1
2
2.1
2.2
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4
Circuit Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Output Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Overtemperature Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Undervoltage Lockout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Open Load Detection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Status Flag . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.1
4.2
4.3
4.4
4.5
4.6
4.7
5
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5.1
5.2
5.3
5.4
6
7
8
Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Data Sheet
2
Rev. 1.0, 2007-05-21
TrilithIC
BTM7741G
1
Overview
Features
•
•
•
•
Quad D-MOS switch driver
Free configurable as bridge or quad-switch
Optimized for DC motor management applications
Low RDS ON
High side: 110 mΩ typ. @ 25°C, 270 mΩ max. @ 150°C
Low side: 100 mΩ typ. @ 25°C, 230 mΩ max. @ 150°C
Maximum peak current: typ. 10 A @ 25 °C
Very low quiescent current: typ. 5 µA @ 25 °C
Small outline, enhanced power PG-DSO-package
Operates up to 40 V
•
•
•
•
•
•
•
•
•
•
•
•
•
PG-DSO-28-22
PWM frequencies up to 1 kHz
Status flag diagnosis
Short-circuit-protection
Overtemperature shut down with hysteresis
Internal clamp diodes
Open load detection in Off-mode
Under-voltage detection with hysteresis
Green Product (RoHS compliant)
AEC Qualified
Description
The BTM7741G is part of the TrilithIC family containing three dies in one package: One double high-side switch
and two low-side switches. The drains of these three vertical DMOS chips are mounted on separated lead frames.
The sources are connected to individual pins, so the BTM7741G can be used in H-bridge- as well as in any other
configuration. Both the double high-side and the two low-side switches of the BTM7741G are manufactured in
SMART SIPMOS® technology which combines low RDS ON vertical DMOS power stages with CMOS circuitry for
control, protection and diagnosis.
Type
Package
Marking
BTM7741G
PG-DSO-28-22
BTM7741G
Data Sheet
3
Rev. 1.0, 2007-05-21
BTM7741G
2
Pin Configuration
2.1
Pin Assignment
DL1 1
IL1 2
28 DL1
27 SL1
26 SL1
25 DL1
24 DHVS
23 SH1
22 SH1
21 SH2
20 SH2
19 DHVS
18 DL2
17 SL2
16 SL2
15 DL2
DL1 3
N.C. 4
DHVS 5
GND 6
IH1 7
LS-Leadframe
HS-Leadframe
LS-Leadframe
ST 8
IH2 9
DHVS 10
N.C. 11
DL2 12
IL2 13
DL2 14
Figure 1
Pin Assignment BTM7741G (Top View)
Data Sheet
4
Rev. 1.0, 2007-05-21
BTM7741G
Table 1
Pin No.
1, 3, 25, 28
2
Pin Definitions and Functions
Symbol Function
DL1
IL1
Drain of low-side switch1, lead frame 1 1)
Analog input of low-side switch1
4
N.C.
not connected
1)
5, 10, 19, 24 DHVS
6
Drain of high-side switches and power supply voltage, lead frame 2
Ground
GND
7
8
9
11
IH1
ST
IH2
N.C.
Digital input of high-side switch1
Status of high-side switches; open Drain output
Digital input of high-side switch2
not connected
1)
12, 14, 15, 18 DL2
Drain of low-side switch2, lead frame 3
13
IL2
Analog input of low-side switch2
Source of low-side switch2
Source of high-side switch2
Source of high-side switch1
Source of low-side switch1
16,17
20,21
22,23
26,27
SL2
SH2
SH1
SL1
1) To reduce the thermal resistance these pins are direct connected via metal bridges to the lead frame.
Pins written in bold type need power wiring.
Data Sheet
5
Rev. 1.0, 2007-05-21
BTM7741G
2.2
Terms
VS=12V
IS
CS
CL
470nF
100µF
IFH1,2
DHVS
5,10,19,24
IST LK
IST
VDSH2
VDSH1
8
7
ST
-VFH2
-VFH1
Diagnosis
Biasing and Protection
VST
VSTL
VSTZ
IIH1
IH1
Gate
Driver
ISH2
IDL2
IDL LK 2
ISH1
IDL1
IDL LK 1
RO1
RO2
SH2
DL2
20,21
IIH1
IH2
9
6
Gate
VIH1
Driver
12,14,15,18
GND
VUVON
VUVOFF
VIH2
SH1
DL1
IGND
ILKCL
22,23
1,3,25,28
Protection
IIL1
2
IL1
IL2
Gate
Driver
Protection
IIL2
13
VIL1
Gate
Driver
VIL th 1
26,27
SL1
VIL2
VIL th 2
16,17
VDSL1
-VFL1
VDSL2
SL2
-VFL2
ISCP L 1
ISCP L 2
ISL1
ISL2
Figure 2
Table 2
Terms BTM7741G
HS-Source-Current
Named during Short Circuit
Named during Leakage-Cond.
ISH1,2
ISCP H
IDL LK
Data Sheet
6
Rev. 1.0, 2007-05-21
BTM7741G
3
Block Diagram
DHVS
5,10,19,24
8
ST
Diagnosis
Biasing and Protection
7
Gate
IH1
Driver
RO1
RO2
20,21
SH2
9
6
Gate
IH2
Driver
12,14,15,18
DL2
GND
22,23
SH1
DL1
1,3,25,28
Protection
2
Gate
IL1
IL2
Driver
Protection
13
Gate
Driver
26,27
16,17
SL1
SL2
Figure 3
Block Diagram BTM7741G
Data Sheet
7
Rev. 1.0, 2007-05-21
BTM7741G
4
Circuit Description
4.1
Input Circuit
The control inputs IH1,2 consist of TTL/CMOS compatible Schmitt-Triggers with hysteresis. Buffer amplifiers are
driven by these stages and convert the logic signal into the necessary form for driving the power output stages.
The inputs are protected by ESD clamp-diodes. The inputs IL1 and IL2 are connected to the internal gate-driving
units of the N-channel vertical power-MOS-FETs.
4.2
Output Stages
The output stages consist of an low RDSON Power-MOS H-bridge. In H-bridge configuration, the D-MOS body
diodes can be used for freewheeling when communicating inductive loads. If the high-side switches are used as
single switches, positive and negative voltage spikes which occur when driving inductive loads are limited by
integrated power clamp diodes.
4.3
Short Circuit Protection
The outputs are protected against
– output short circuit to ground
– output short circuit to the supply voltage, and
– overload (load short circuit).
An internal OP-Amp controls the Drain-Source-Voltage by comparing the DS-Voltage-Drop with an internal
reference voltage. Above this trip point the OP-Amp reduces the output current depending on the junction
temperature and the drop voltage.
4.4
Overtemperature Protection
The high-side and the low-side switches also incorporate an over temperature protection circuit with hysteresis
which switches off the output transistors. In the case of the high-side switches, the status output is set to low.
4.5
Undervoltage Lockout
When VS reaches the switch-on voltage VUVON the IC becomes active with a hysteresis. The High-Side output
transistors are switched off if the supply voltage VS drops below the switch off value VUVOFF
.
4.6
Open Load Detection
The open load detection of the BTM7741G works in OFF condition and is based on a voltage measurement at the
source of the high side switch. In order to use the open load detection SH2 has to be connected to Vcc via a pull
up resistor. Because this pull up resistor would connect the bridge output to the µC supply it needs to be
disconnected whenever the high side switch is on. This can be done by a transistor as shown in the application
example (Figure 4 “Application Example BTM7741G” on Page 15). To check for open load:
•
•
•
Set IH1 = IH2 = LOW (both high side switches off)
Set IL2 = LOW, IL1 = HIGH (only low side switch 1 is on)
Connect Rol (open load pull up) to 5V via transistor
If the load is connected properly it will pull down the voltage at SH2 to a value close to 0V.
If the load is disconnected the resistor will pull the voltage at SH2 to value close to Vcc.
If the voltage at SH2 is higher than the open load detection voltage VOUT(OL) then ST will be pulled down.
Data Sheet
8
Rev. 1.0, 2007-05-21
BTM7741G
4.7
Status Flag
The status flag output is an open drain output with zener-diode which requires a pull-up resistor, as shown in the
application circuit in Figure 4 “Application Example BTM7741G” on Page 15. Various errors as listed in the
table “Diagnosis” are reported by switching the open drain output ST to low.
Table 3
Flag
Truth table and Diagnosis (valid only for the High-Side-Switches)
IH1 IH2 SH1 SH2 ST Remarks
Inputs Outputs
0
0
1
1
0
L
L
1
1
1
1
stand-by mode
switch2 active
switch1 active
both switches
active
Normal operation;
identical with functional truth table
1
0
1
L
H
L
H
H
H
Open load at high-side switch 1
Open load at high-side switch 2
0
1
X
X
X
X
0
1
Z
H
X
X
X
X
Z
H
0
1
0
1
detected
detected
Overtemperature high-side switch1
Overtemperature high-side switch2
Overtemperature both high-side switches
0
1
X
X
0
X
1
X
X
0
1
0
1
X
L
L
X
X
L
L
L
X
X
L
L
L
L
L
1
0
1
0
1
0
0
detected
detected
detected
detected
Under voltage
X
X
L
L
1
not detected
Inputs:
Outputs:
Status:
0 = Logic LOW
1 = Logic HIGH
X = don’t care
Z = Output in tristate condition
L = Output in sink condition
H = Output in source condition
X = Voltage level undefined
1 = No error
0 = Error
Data Sheet
9
Rev. 1.0, 2007-05-21
BTM7741G
5
Electrical Characteristics
5.1
Absolute Maximum Ratings
Absolute Maximum Ratings1)
– 40 °C < Tj < 150 °C
Pos.
Parameter
Symbol
Limit Values
Unit Remarks
min.
max.
High-Side-Switches (Pins DHVS, IH1,2 and SH1,2)
5.1.1
5.1.2
Supply voltage
VS
VS(SCP)
– 0.3
–
42
28
V
V
–
Supply voltage for full short circuit
protection
3)
5.1.3
5.1.4
5.1.5
HS-drain current2)
HS-input current
HS-input voltage
IS
IIH
VIH
– 7
– 5
– 10
A
TA = 25°C; tP < 100 ms
5
16
mA Pin IH1 and IH2
V
Pin IH1 and IH2
Status Output ST
5.1.6
5.1.7
5.1.8
5.1.9
Status pull up voltage
Status Output current
Low-Side-Switches (Pins DL1,2, IL1,2 and SL1,2)
Drain-Source-Clamp voltage
VST
IST
– 0.3
– 5
5.4
5
V
mA Pin ST
VDSL
42
–
–
– 7
– 0.3
–
30
V
V
V
A
V
VIL = 0 V; ID ≤ 1 mA
VIL = 5 V
VIL = 10 V
TA = 25°C; tP < 100 ms
5.1.10 Supply voltage for short circuit protection VDSL(SCP)
5.1.11
20
5.1.12 LS-drain current2)
5.1.13 LS-input voltage
Temperatures
IDL
VIL
3)
10
–
5.1.14 Junction temperature
5.1.15 Storage temperature
ESD Protection4)
Tj
Tstg
– 40
– 55
150
150
°C
°C
–
–
5.1.16 Input LS-Switch
5.1.17 Input HS-Switch
5.1.18 Status HS-Switch
5.1.19 Output LS and HS-Switch
VESD
VESD
VESD
VESD
–
–
–
–
2
1
2
8
kV
kV
kV
kV all other pins connected
to Ground
1) Not subject to production test; specified by design
2) Single pulse
3) Internally limited
4) ESD susceptibility HBM according to EIA/JESD22-A114-B (1.5kΩ, 100pF)
Note:Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note:Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation.
Data Sheet
10
Rev. 1.0, 2007-05-21
BTM7741G
5.2
Functional Range
Pos.
Parameter
Symbol Limit Values
Unit
Remarks
min.
max.
5.2.20 Supply voltage
VS
VUVOFF
42
V
After VS rising above
VUVON
5.2.21 Input voltage HS
5.2.22 Input voltage LS
5.2.23 Status output current
5.2.24 Junction temperature
VIH
VIL
IST
Tj
– 0.3
– 0.3
0
15
10
2
V
V
mA
°C
–
–
–
–
– 40
150
Note:Within the functional range the IC operates as described in the circuit description. The electrical
characteristics are specified within the conditions given in the related electrical characteristics table
5.3
Thermal Resistance
Pos.
Parameter
Symbol
Limit Values
Unit
Conditions
Min. Typ. Max.
5.3.25 LS-junction to soldering point1)
5.3.26 HS-junction to soldering point1)
5.3.27 Junction to Ambient1)
RthJSP
RthJSP
RthJA
–
–
–
–
–
36
20
20
–
K/W
K/W
K/W
measured to pin 3 or 12
measured to pin 19
2)
R
thJA = Tj(HS) / (P(HS)+ P(LS))
1) Not subject to production test, specified by design.
2) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The Product
(chip+package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70µm Cu, 2 x 35µm Cu).
Data Sheet
11
Rev. 1.0, 2007-05-21
BTM7741G
5.4
Electrical Characteristics
ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 150 °C; 8 V < VS < 18 V
unless otherwise specified
Pos.
Parameter
Symbol
Limit Values
Unit Test Condition
min.
typ.
max.
Current Consumption HS-switch
5.4.28 Quiescent current
IS
–
5
9
µA
µA
IH1 = IH2 = 0 V
Tj = 25 °C
–
–
–
1.6
13
3.2
IH1 = IH2 = 0 V
5.4.29 Supply current;
one HS-switch active
IS
mA IH1 or IH2 = 5 V
VS = 12 V
5.4.30 Supply current;
both HS-switches active
5.4.31 Leakage current of
high-side switch
IS
–
–
–
3.2
–
6.4
6
mA IH1 and IH2 = 5 V
VS = 12 V
ISH LK
µA
VIH = VSH = 0 V
VS = 12 V
5.4.32 Leakage current through logic GND ILKCL = IFH +
–
10
mA
IFH = 3 A
in free wheeling condition
Current Consumption LS-switch
5.4.33 Input current
ISH
VS = 12 V
IIL
–
–
–
8
30
µA
µA
µA
VIL = 5 V;
normal operation
160
2
300
10
VIL = 5 V;
failure mode
5.4.34 Leakage current of low-side switch IDL LK
VIL = 0 V
V
DSL = 18 V
Under Voltage Lockout HS-switch
5.4.35 Switch-ON voltage
5.4.36 Switch-OFF voltage
5.4.37 Switch ON/OFF hysteresis
Output stages
VUVON
VUVOFF
VUVHY
–
1.8
–
–
–
1
4.8
3.5
–
V
V
V
VS increasing
VS decreasing
V
UVON – VUVOFF
5.4.38 Inverse diode of high-side switch;
VFH
VFL
–
–
–
–
–
–
0.8
1.2
1.2
–
V
I
I
I
FH = 3 A
Forward-voltage
5.4.39 Inverse diode of low-side switch;
Forward-voltage
0.8
V
FL = 3 A
5.4.40 Static drain-source on-resistance of RDS ON H
110
200
100
160
mΩ
mΩ
mΩ
mΩ
SH = 1 A; VS = 12 V
high-side switch
Tj = 25 °C
270
–
I
SH = 1 A; VS = 12 V
Tj = 150 °C
SL = 1 A; VIL = 5 V
Tj = 25 °C
5.4.41 Static drain-source
on-resistance of low-side switch
RDS ON L
I
230
ISL = 1 A; VIL = 5 V
Tj = 150 °C
Data Sheet
12
Rev. 1.0, 2007-05-21
BTM7741G
ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 150 °C; 8 V < VS < 18 V
unless otherwise specified
Pos.
Parameter
Symbol
Limit Values
Unit Test Condition
min.
typ.
max.
Short Circuit of high-side switch to GND
5.4.42 Initial peak SC current
ISCP H
9
–
6
11
10
8
14
–
10
A
A
A
Tj = – 40 °C
Tj = + 25 °C
Tj = + 150 °C
t
del = 360 µs; VS = 12 V; VDSH = 12V
Short Circuit of high-side switch to VS
5.4.43 Output pull-down-resistor
Short Circuit of low-side switch to VS
5.4.44 Initial peak SC current
RO
12
22
50
kΩ
VDSL = 3 V
ISCP L
14
–
8.5
17
15
10
22
–
15
A
A
A
Tj = – 40 °C
Tj = 25 °C
Tj = 150 °C
V
DSL = 12V; VIL = 5V;
tdel = 250 µs
Thermal Shutdown1)
5.4.45 Thermal shutdown junction
Tj SD
Tj SO
∆Τ
155
150
–
180
170
10
190
180
–
°C
°C
°C
–
temperature
5.4.46 Thermal switch-on junction
temperature
5.4.47 Temperature hysteresis
Status Flag Output ST of high-side switch
5.4.48 Low output voltage
5.4.49 Leakage current
5.4.50 Zener-limit-voltage
–
∆Τ = TjSD – TjSO
VST L
IST LK
VST Z
–
–
5.4
0.2
–
–
0.6
10
–
V
µA
V
IST = 1.6 mA
VST = 5 V
IST = 1.6 mA
Open load detection in Off condition
5.4.51 Open load detection voltage
VOUT(OL)
1.8
–
2.8
–
4
500
V
µs
5.4.52 Status change after neg. input slope td(OL)
VS = 12 V
with OL
Data Sheet
13
Rev. 1.0, 2007-05-21
BTM7741G
ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 150 °C; 8 V < VS < 18 V
unless otherwise specified
Pos.
Parameter
Symbol
Limit Values
Unit Test Condition
min.
typ.
max.
Switching times of high-side switch1)
5.4.53 Turn-ON-time to 90% VSH
5.4.54 Turn-OFF-time to 10% VSH
5.4.55 Slew rate on 10 to 30% VSH
5.4.56 Slew rate off 70 to 40% VSH
Switching times of low-side switch1)
5.4.57 Turn-ON-time to 10% VDL
5.4.58 Turn-OFF-time to 90% VDL
tON
tOFF
dV/dtON
-dV/dtOFF
–
–
–
–
85
80
–
180
180
1.2
1.6
µs
µs
RLoad = 12 Ω
VS = 12 V
V/µs
V/µs
–
tON
tOFF
–
–
60
60
150
150
µs
µs
RLoad = 10 Ω
VS = 12 V
VIL = 0 to 5 V
5.4.59 Slew rate on 70 to 50% VDL
5.4.60 Slew rate off 50 to 70% VDL
-dV/dtON
dV/dtOFF
–
–
1
1
1.5
1.5
V/µs RLoad = 4.7 Ω
VS = 12 V
V/µs
VIL = 0 to 5 V
Control Inputs of high-side switches IH 1, 2
5.4.61 H-input voltage
5.4.62 L-input voltage
5.4.63 Input voltage hysteresis
5.4.64 H-input current
5.4.65 L-input current
5.4.66 Input series resistance
5.4.67 Zener limit voltage
Control Inputs IL1, 2
VIH High
VIH Low
VIH HY
IIH High
IIH Low
RI
–
1
–
15
5
–
–
0.3
30
–
2.5
–
–
60
20
5.5
–
V
V
V
µA
µA
kΩ
V
–
–
–
VIH = 5 V
VIH = 0.4 V
–
2.7
5.4
4
–
VIH Z
IIH = 1.6 mA
5.4.68 Gate-threshold-voltage
1) Not subject to production test; specified by design
VIL th
0.9
1.7
2.2
V
IDL = 2 mA
Note:The listed characteristics are ensured over the operating range of the integrated circuit. Typical
characteristics specified mean values expected over the production spread. If not otherwise specified,
typical characteristics apply at TA = 25 °C and the given supply voltage.
Data Sheet
14
Rev. 1.0, 2007-05-21
BTM7741G
6
Application Information
Note:The following simplified application examples are given as a hint for the implementation of the device only
and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the
device. The function of the described circuits must be verified in the real application
Watchdog
I
TLE
Reset
VS=12V
4278G
Q
D
RQ
100 k
CQ
CS
D01
Z39
CD
Ω
22µF
10µF
47nF
WD
R
VCC
DHVS
BCR192W
5,10,19,24
8
7
RS
10 k
ST
to µC
Ω
Diagnosis
Biasing and Protection
ROL
10 k
Ω
optional for
open load
in off
IH1
Gate
Driver
RO1
RO2
SH2
DL2
20,21
IH2
9
6
Gate
Driver
12,14,15,18
GND
XC866
M
SH1
DL1
22,23
1,3,25,28
Protection
2
IL1
IL2
Gate
Driver
Protection
13
Gate
Driver
26,27
SL1
16,17
SL2
GND
In case of VDSL<-0.6V or reverse battery the current into the µC might be limited by external resitors to protect the µC
Figure 4
Application Example BTM7741G
Data Sheet
15
Rev. 1.0, 2007-05-21
BTM7741G
7
Package Outlines
0.35 x 45˚
1)
7.6 -0.2
+0.09
0.23
8˚ max
0.4 +0.8
10.3 ±0.3
1.27
0.35 +0.152)
0.1
0.2 28x
28
15
14
1
1)
18.1-0.4
Index Marking
1) Does not include plastic or metal protrusions of 0.15 max rer side
2) Does not include dambar protrusion of 0.05 max per side
GPS05123
Figure 5
PG-DSO-28-22 (Plastic Transistor Single Outline Package)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
For further information on alternative packages, please visit our website:
http://www.infineon.com/packages.
Dimensions in mm
Data Sheet
16
Rev. 1.0, 2007-05-21
BTM7741G
8
Revision History
Rev. Date
Changes
1.0
2007-05-21
Initial Version
Data Sheet
17
Rev. 1.0, 2007-05-21
Edition 2007-05-21
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
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