BTM7710GP [INFINEON]
TrilithIC; TrilithIC型号: | BTM7710GP |
厂家: | Infineon |
描述: | TrilithIC |
文件: | 总18页 (文件大小:580K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Datasheet, Rev. 1.0, July 2008
BTM7710GP
TrilithIC
Automotive Power
BTM7710GP
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1
2
2.1
2.2
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4
Circuit Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Output Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Overtemperature Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Undervoltage Lockout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Status Flag . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4.1
4.2
4.3
4.4
4.5
4.6
5
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5.1
5.2
5.3
5.4
6
7
8
Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Datasheet
2
Rev. 1.0, 2008-07-07
TrilithIC
BTM7710GP
1
Overview
Features
•
•
•
•
Quad D-MOS switch driver
Free configurable as bridge or quad-switch
Optimized for DC motor management applications
Low RDS ON
High side: 70 mΩ typ. @ 25°C, 165 mΩ max. @ 110°C
Low side: 40 mΩ typ. @ 25°C, 75 mΩ max. @ 110°C
Peak current: typ. 15 A @ 25 °C
Very low quiescent current: typ. 5 μA @ 25 °C
Thermally optimized power package
Operates up to 40 V
Load and GND-short-circuit-protection
Overtemperature shut down with hysteresis
Undervoltage detection with hysteresis
Status flag diagnosis
•
•
•
•
•
•
•
•
•
•
•
•
PG-TO263-15-1
Internal clamp diodes
Isolated sources for external current sensing
Green Product (RoHS compliant)
AEC Qualified
Description
The BTM7710GP is part of the TrilithIC family containing three dies in one package: One double high-side switch
and two low-side switches. The drains of these three vertical DMOS chips are mounted on separated lead frames.
The sources are connected to individual pins, so the BTM7710GP can be used in H-bridge- as well as in any other
configuration. The double high-side switch is manufactured in SMART SIPMOS® technology which combines low
RDS ON vertical DMOS power stages with CMOS circuitry for control, protection and diagnosis. To achieve low
RDS ON and fast switching performance, the low-side switches are manufactured in S-FET logic level technology.
Type
Package
Marking
BTM7710GP
PG-TO263-15-1
BTM7710GP
Datasheet
3
Rev. 1.0, 2008-07-07
BTM7710GP
2
Pin Configuration
2.1
Pin Assignment
Molding
Compound
IL1
1
2
Heat-Slug 1
NC
18 DL1
SL1
NC
3
4
SH1
GND
IH1
DHVS
ST
5
Heat-Slug 2
6
7
8
17 DHVS
9
IH2
SH2
NC
10
11
12
13
14
15
Heat-Slug 3
16 DL2
IL2
NC
SL2
Figure 1
Pin Assignment BTM7710GP (Top View)
Datasheet
4
Rev. 1.0, 2008-07-07
BTM7710GP
Table 1
Pin Definitions and Functions
Symbol Function
Pin No.
1
IL1
Analog input of low-side switch 1
2
NC
Not connected
3
SL1
NC
Source of low-side switch 1
Not connected
4
5
SH1
GND
IH1
DHVS
ST
Source of high-side switch 1
Ground of high-side switches
Digital input of high-side switch 1
Drain of high-side switches and power supply voltage
Status; open Drain output
Digital input of high-side switch 2
Source of high-side switch 2
Not connected
6
7
8
9
10
11
12
13
14
15
16
IH2
SH2
NC
IL2
Analog input of low-side switch 2
Not connected
NC
SL2
DL2
Source of low-side switch 2
Drain of low-side switch 2
Heat-Slug 3 or Heat-Dissipator
17
18
DHVS
DL1
Drain of high-side switches and power supply voltage
Heat-Slug 2 or Heat-Dissipator
Drain of low-side switch 1
Heat-Slug 1 or Heat-Dissipator
Pins written in bold type need power wiring.
Datasheet
5
Rev. 1.0, 2008-07-07
BTM7710GP
2.2
Terms
VS=12V
IS
CS
CL
470nF
100µF
IFH1,2
DHVS
8, 17
IST LK
IST
VDSH2
VDSH1
9
ST
-VFH2
-VFH1
Diagnosis
Biasing and Protection
VST
VSTL
VSTZ
IIH1
7
IH1
Gate
Driver
ISH2
IDL2
IDL LK 2
ISH1
IDL1
IDL LK 1
RO1
RO2
SH2
DL2
11
IIH1
IH2
10
6
Gate
Driver
VIH1
16
GND
VUVON
VIH2
VUVOFF
SH1
DL1
IGND
5
ILKCL
18
IIL1
1
IL1
IL2
IIL2
13
VIL1
VIL th 1
3
VIL2
VIL th 2
15
VDSL1
-VFL1
VDSL2
SL2
SL1
-VFL2
ISCP L 1
ISCP L 2
ISL1
ISL2
Figure 2
Table 2
Terms BTM7710GP
HS-Source-Current
Named during Short Circuit
Named during Leakage-Cond.
ISH1,2
ISCP H
IDL LK
Datasheet
6
Rev. 1.0, 2008-07-07
BTM7710GP
3
Block Diagram
DHVS
8, 17
9
ST
Diagnosis
Biasing and Protection
7
Driver
IH1
IN OUT
0 0 L L
0 1 L H
1 0 H L
1 1 H H
RO1
RO2
11
SH2
DL2
10
IH2
16
6
GND
5
18
SH1
DL1
1
IL1
13
IL2
3
15
SL1
SL2
Figure 3
Block Diagram BTM7710GP
Datasheet
7
Rev. 1.0, 2008-07-07
BTM7710GP
4
Circuit Description
4.1
Input Circuit
The control inputs IH1,2 consist of TTL/CMOS compatible Schmitt-Triggers with hysteresis. Buffer amplifiers are
driven by these stages and convert the logic signal into the necessary form for driving the power output stages.
The inputs are protected by ESD clamp-diodes. The inputs IL1 and IL2 are connected to the gates of the standard
N-channel vertical power-MOS-FETs.
4.2
Output Stages
The output stages consist of an low RDSON Power-MOS H-bridge. In H-bridge configuration, the D-MOS body
diodes can be used for freewheeling when communicating inductive loads. If the high-side switches are used as
single switches, positive and negative voltage spikes which occur when driving inductive loads are limited by
integrated power clamp diodes.
4.3
Short Circuit Protection
The outputs are protected against short circuit to ground and short circuit over load
An internal OP-Amp controls the Drain-Source-Voltage by comparing the DS-Voltage-Drop with an internal
reference voltage. Above this trip point the OP-Amp reduces the output current depending on the junction
temperature and the drop voltage.
4.4
Overtemperature Protection
The high-side switches also incorporate an over temperature protection circuit with hysteresis which switches off
the output transistors and sets the status output to low.
4.5
Undervoltage Lockout
When VS reaches the switch-on voltage VUVON the IC becomes active with a hysteresis. The high-side output
transistors are switched off if the supply voltage VS drops below the switch off value VUVOFF
.
4.6
Status Flag
The status flag output is an open drain output with zener-diode which requires a pull-up resistor, as shown in the
application circuit in Figure 4 “Application Example BTM7710GP” on Page 15. Various errors as listed in the
table “Diagnosis” are reported by switching the open drain output ST to low.
Datasheet
8
Rev. 1.0, 2008-07-07
BTM7710GP
Table 3
Flag
Truth table and Diagnosis (valid only for the High-Side-Switches)
IH1 IH2 SH1 SH2 ST Remarks
Inputs Outputs
0
0
L
L
H
H
L
H
L
H
1
1
1
1
stand-by mode
switch2 active
switch1 active
both switches active
Normal operation;
identical with functional truth table
0
1
1
1
0
1
Overtemperature high-side switch1
Overtemperature high-side switch2
Overtemperature both high-side switches
0
1
X
X
L
L
X
X
1
0
detected
detected
X
X
0
1
X
X
L
L
1
0
0
X
1
0
1
X
L
L
L
L
L
L
1
0
0
detected
detected
Under voltage
X
X
L
L
1
not detected
Inputs:
Outputs:
Status:
0 = Logic LOW
1 = Logic HIGH
X = don’t care
Z = Output in tristate condition
L = Output in sink condition
H = Output in source condition
X = Voltage level undefined
1 = No error
0 = Error
Datasheet
9
Rev. 1.0, 2008-07-07
BTM7710GP
5
Electrical Characteristics
5.1
Absolute Maximum Ratings
Absolute Maximum Ratings1)
– 40 °C < Tj < 110 °C
Pos.
Parameter
Symbol
Limit Values
Unit Remarks
min.
max.
High-Side-Switches (Pins DHVS, IH1,2 and SH1,2)
5.1.1
5.1.2
Supply voltage
VS
– 0.3
–
42
28
V
V
–
–
Supply voltage for full short circuit
protection
VS(SCP)
2)
5.1.3
5.1.4
5.1.5
HS-drain current
HS-input current
HS-input voltage
IS
– 10
– 5
A
TA = 25°C; tP < 100 ms
IIH
VIH
5
mA Pin IH1 and IH2
– 10
16
V
Pin IH1 and IH2
Status Output ST
5.1.6
5.1.7
Status pull up voltage
Status Output current
VST
IST
– 0.3
– 5
5.4
5
V
–
mA Pin ST
Low-Side-Switches (Pins DL1,2, IL1,2 and SL1,2)
5.1.8
Drain-Source-Clamp voltage
VDSL
IDL
55
–
V
VIL = 0 V; ID ≤ 1 mA
Tj = 25°C
5.1.9
LS-drain current
– 12
–
12
20
A
A
TC = 125°C; DC
5.1.10
TC = 85°C; tP < 100 ms;
duty cycle < 0.1
5.1.11
–
30
20
A
V
TC = 85°C; tP < 1 ms;
duty cycle < 0.1
5.1.12 LS-input voltage
Temperatures
VIL
– 20
Pin IL1 and IL2
5.1.13 Junction temperature
5.1.14 Storage temperature
ESD Protection3)
Tj
– 40
– 55
110
150
°C
°C
–
–
Tstg
5.1.15 Input LS-Switch
5.1.16 Input HS-Switch
5.1.17 Status HS-Switch
5.1.18 Output LS and HS-Switch
VESD
VESD
VESD
VESD
–
–
–
–
0.3
1
kV
kV
kV
–
–
–
2
8
kV all other pins connected
to Ground
1) Not subject to production test; specified by design
2) Internally limited
3) ESD susceptibility HBM according to EIA/JESD22-A114-B (1.5kΩ, 100pF)
Note:Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note:Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation.
Datasheet
10
Rev. 1.0, 2008-07-07
BTM7710GP
5.2
Functional Range
Pos.
5.2.1
Parameter
Symbol Limit Values
Unit
Remarks
min.
max.
Supply voltage
VS
VUVOFF
42
V
After VS rising above
VUVON
5.2.2
5.2.3
5.2.4
5.2.5
Input voltage HS
VIH
VIL
IST
Tj
– 0.3
– 0.3
0
15
20
2
V
–
–
–
–
Input voltage LS
V
Status output current
Junction temperature
mA
°C
– 40
110
Note:Within the functional range the IC operates as described in the circuit description. The electrical
characteristics are specified within the conditions given in the related electrical characteristics table
5.3
Thermal Resistance
Pos.
Parameter
Symbol
Limit Values
Unit
Conditions
Min. Typ. Max.
5.3.1
5.3.2
5.3.3
LS-junction to Case1)
HS-junction to Case1)
Junction to Ambient1)
RthJC L
RthJC H
RthJA
–
–
–
–
1.7
1.7
–
K/W
K/W
K/W
measured to pin 3 or 12
–
measured to pin 19
2)
16
R
thJA = Tj(HS) / (P(HS)+ P(LS))
1) Not subject to production test, specified by design.
2) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The Product
(chip+package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70µm Cu, 2 x 35µm Cu).
Where applicable a thermal via array under the exposed pad contacted the first inner copper layer.
5.4
Electrical Characteristics
ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 110 °C; 8 V < VS < 18 V
unless otherwise specified
Pos.
Parameter
Symbol
Limit Values
Unit Test Condition
min.
typ.
max.
Current Consumption HS-switch
5.4.4
Quiescent current
IS
–
5
9
μA
μA
IH1 = IH2 = 0 V
Tj = 25 °C
IH1 = IH2 = 0 V1)
–
–
–
12
3
5.4.5
5.4.6
5.4.7
5.4.8
Supply current;
one HS-switch active
IS
1.5
mA IH1 or IH2 = 5 V
VS = 12 V
Supply current;
both HS-switches active
IS
–
–
–
3
–
–
6
mA IH1 and IH2 = 5 V
VS = 12 V
Leakage current of
high-side switch
ISH LK
6
μA
VIH = VSH = 0 V
VS = 12 V
Leakage current through logic GND ILKCL = IFH +
in free wheeling condition ISH
10
mA
IFH = 3 A
VS = 12 V
Datasheet
11
Rev. 1.0, 2008-07-07
BTM7710GP
ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 110 °C; 8 V < VS < 18 V
unless otherwise specified
Pos.
Parameter
Symbol
Limit Values
Unit Test Condition
min.
typ.
max.
Current Consumption LS-switch
5.4.9 Input current
IIL
–
–
10
–
100
10
nA
VIL = 20 V;
DSL = 0V
VIL = 0 V
DSL = 40V
V
5.4.10 Leakage current of low-side switch IDL LK
μA
V
Under Voltage Lockout HS-switch
5.4.11 Switch-ON voltage
5.4.12 Switch-OFF voltage
5.4.13 Switch ON/OFF hysteresis
Output stages
VUVON
VUVOFF
VUVHY
–
–
–
1
4.8
3.5
–
V
V
V
VS increasing
VS decreasing
VUVON – VUVOFF
1.8
–
5.4.14 Inverse diode of high-side switch;
Forward-voltage
VFH
VFL
–
–
–
–
–
–
0.8
0.8
70
1.2
1.2
–
V
IFH = 3 A
IFL = 3 A
5.4.15 Inverse diode of low-side switch;
Forward-voltage
V
5.4.16 Static drain-source on-resistance of RDS ON H
mΩ
mΩ
mΩ
mΩ
I
SH = 1 A; VS = 12 V
Tj = 25 °C
SH = 1 A; VS = 12 V
Tj = 110 °C1)
SL = 1 A; VIL = 5 V
Tj = 25 °C
high-side switch
110
40
165
–
I
5.4.17 Static drain-source
on-resistance of low-side switch
RDS ON L
I
50
75
ISL = 1 A; VIL = 5 V
Tj = 110 °C1)
Datasheet
12
Rev. 1.0, 2008-07-07
BTM7710GP
ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 110 °C; 8 V < VS < 18 V
unless otherwise specified
Pos.
Parameter
Symbol
Limit Values
Unit Test Condition
min.
typ.
max.
Short Circuit of high-side switch to GND
5.4.18 Initial peak SC current
ISCP H
15
–
18
15
12
20
–
A
A
A
Tj = – 40 °C
t
del = 100 µs; VS = 12 V; VDSH = 12V
Tj = + 25 °C
Tj = + 110 °C1)
10
15
Short Circuit of high-side switch to VS
5.4.19 Output pull-down-resistor
Thermal Shutdown1)
RO
8
15
35
kΩ
VDSL = 3 V
5.4.20 Thermal shutdown junction
temperature
Tj SD
Tj SO
ΔΤ
155
150
–
180
170
10
190
180
–
°C
°C
°C
–
5.4.21 Thermal switch-on junction
temperature
–
5.4.22 Temperature hysteresis
Status Flag Output ST of high-side switch
5.4.23 Low output voltage
ΔΤ = TjSD – TjSO
VST L
IST LK
VST Z
–
0.2
–
0.6
10
–
V
IST = 1.6 mA
VST = 5 V
5.4.24 Leakage current
–
μA
V
5.4.25 Zener-limit-voltage
5.4
–
IST = 1.6 mA
Switching times of high-side switch1)
5.4.26 Turn-ON-time to 90% VSH
5.4.27 Turn-OFF-time to 10% VSH
5.4.28 Slew rate on 10 to 30% VSH
5.4.29 Slew rate off 70 to 40% VSH
Switching times of low-side switch1)
5.4.30 Turn-ON Delay Time
5.4.31 Rise Time
tON
–
–
–
–
75
60
–
160
160
1.8
2.1
μs
RLoad = 12 Ω
VS = 12 V
tOFF
μs
dV/dtON
-dV/dtOFF
V/μs
V/μs
–
td(on)
tr
td(off)
tf
–
–
–
–
5
–
–
–
–
ns
ns
ns
ns
resistive load
ISL= 3A; VDSL=12V
VIL = 5V; RG = 16Ω
25
15
25
5.4.32 Switch-OFF Delay Time
5.4.33 Fall Time
Gate charge of low-side switch1)
5.4.34 Input to source charge
5.4.35 Input to drain charge
5.4.36 Input charge total
QIS
QID
QI
–
–
–
4
–
nC
nC
nC
ISL = 3 A; VDSL=12 V
ISL = 3 A; VDSL=12 V
8
–
17
40
ISL = 3 A; VDSL=12 V
VIL = 0 to 5 V
5.4.37 Input plateau voltage
V(plateau)
–
2.5
-
V
ISL = 3 A; VDSL=12 V
1)Not subject to production test; specified by design
Datasheet
13
Rev. 1.0, 2008-07-07
BTM7710GP
ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 110 °C; 8 V < VS < 18 V
unless otherwise specified
Pos.
Parameter
Symbol
Limit Values
Unit Test Condition
min.
typ.
max.
Control Inputs of high-side switches IH 1, 2
5.4.38 H-input voltage
VIH High
VIH Low
VIH HY
IIH High
IIH Low
RI
–
–
2.5
–
V
–
–
–
5.4.39 L-input voltage
1
–
V
5.4.40 Input voltage hysteresis
5.4.41 H-input current
–
0.3
30
–
–
V
15
5
60
20
5.5
–
μA
μA
kΩ
V
VIH = 5 V
VIH = 0.4 V
–
5.4.42 L-input current
5.4.43 Input series resistance
5.4.44 Zener limit voltage
Control Inputs IL1, 2
2.7
5.4
4
VIH Z
–
IIH = 1.6 mA
5.4.45 Gate-threshold-voltage
VIL th
0.9
1.7
2.35
V
IDL = 1.0 mA
1) Not subject to production test; specified by design
Note:The listed characteristics are ensured over the operating range of the integrated circuit. Typical
characteristics specified mean values expected over the production spread. If not otherwise specified,
typical characteristics apply at TA = 25 °C and the given supply voltage.
Datasheet
14
Rev. 1.0, 2008-07-07
BTM7710GP
6
Application Information
Note:The following simplified application examples are given as a hint for the implementation of the device only
and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the
device. The function of the described circuits must be verified in the real application
Watchdog
I
TLE
Reset
VS=12V
4278G
Q
D
RQ
100 k
CQ
22µF
CS
10µF
D01
Z39
CD
47nF
Ω
WD
R
VCC
DHVS
8, 17
9
RS
10 k
ST
Ω
Diagnosis
Biasing and Protection
7
IH1
Gate
Driver
RO1
RO2
SH2
DL2
11
IH2
10
6
Gate
Driver
16
GND
XC866
M
SH1
DL1
5
18
1
IL1
IL2
13
3
15
SL2
GND
SL1
Figure 4
Application Example BTM7710GP
Datasheet
15
Rev. 1.0, 2008-07-07
BTM7710GP
7
Package Outlines
±0.2
21.6
8.3 1)
4.4
±0.2
1
±0.15
5.56
±0.1
1.27
B
±0.15
8.18
4.81)
0.1
2.4
A
0.05
14x1.4
0...0.15
0.5±0.1
0.8±0.1
8˚ max.
M
0.25
A
B
0.1
1)
Typical
All metal surfaces tin plated, except area of cut.
21.6
8.4
Footprint
0.8
0.4
1
Figure 5
PG-TO263-15-1 (Plastic Transistor Single Outline Package)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
For further information on alternative packages, please visit our website:
http://www.infineon.com/packages.
Dimensions in mm
Datasheet
16
Rev. 1.0, 2008-07-07
BTM7710GP
8
Revision History
Rev. Date
Changes
1.0
2008-07-07
Initial version
Datasheet
17
Rev. 1.0, 2008-07-07
Edition 2008-07-07
Published by
Infineon Technologies AG
81726 Munich, Germany
© 7/10/08 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
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