BSC074N15NS5 [INFINEON]
Infineon's OptiMOS™ MOSFETs in SuperSO8 package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance.;
| 型号： | BSC074N15NS5 |
| 厂家： | 
Infineon |
| 描述： | Infineon's OptiMOS™ MOSFETs in SuperSO8 package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. |
| 文件： | 总11页 (文件大小：971K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSC074N15NS5
MOSFET
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ150ꢀV
TSON-8-3
8
7
6
5
5
6
Features
7
8
•ꢀN-channel,ꢀnormalꢀlevel
•ꢀExcellentꢀgateꢀchargeꢀxꢀRDS(on)ꢀproductꢀ(FOM)
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)
Pin 1
2
4
3
3
2
4
1
•ꢀVeryꢀlowꢀreverseꢀrecoveryꢀchargeꢀ(Qrr)
•ꢀ175ꢀ°Cꢀoperatingꢀtemperature
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀIdealꢀforꢀhigh-frequencyꢀswitchingꢀandꢀsynchronousꢀrectification
Productꢀvalidation
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
S 1
8 D
7 D
S 2
S 3
G 4
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
6 D
5 D
Parameter
Value
150
7.4
Unit
VDS
V
RDS(on),max
ID
mΩ
A
114
116
23
Qoss
Qrr
nC
nC
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
BSC074N15NS5
TSON-8-3
074N15N
-
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2019-09-18
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ150ꢀV
BSC074N15NS5
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2019-09-18
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ150ꢀV
BSC074N15NS5
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
114
80
VGS=10ꢀV,ꢀTC=25ꢀ°C1)
VGS=10ꢀV,ꢀTC=100ꢀ°C
Continuous drain current
ID
A
Pulsed drain current2)
Avalanche energy, single pulse3)
Gate source voltage
ID,pulse
EAS
-
-
-
-
-
456
210
20
A
TA=25ꢀ°C
-
mJ
V
ID=50ꢀA,ꢀRGS=25ꢀΩ
VGS
Ptot
-20
-
-
Power dissipation
214
W
TC=25ꢀ°C
IEC climatic category; DIN IEC 68-1:
55/175/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
175
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case,
bottom
RthJC
RthJC
RthJA
-
0.4
0.7
°C/W -
°C/W -
°C/W -
Thermal resistance, junction - case,
top
-
-
-
-
20
50
Device on PCB,
6 cm² cooling area4)
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
at 25°C. For higher Tcase please refer to Diagram 2. De-rating will be required based on the actual environmental
conditions.
2) See Diagram 3 for more detailed information
3) See Diagram 13 for more detailed information
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2019-09-18
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ150ꢀV
BSC074N15NS5
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
150
3.0
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
3.8
4.6
VDS=VGS,ꢀID=136ꢀµA
-
-
0.1
10
1
100
VDS=120ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=120ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
IDSS
µA
nA
IGSS
-
1
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
-
6.0
6.6
7.4
8.1
VGS=10ꢀV,ꢀID=50ꢀA
VGS=8ꢀV,ꢀID=25ꢀA
RDS(on)
mΩ
Gate resistance1)
Transconductance
RG
gfs
-
1.0
81
1.5
-
Ω
-
41
S
|VDS|≥2|ID|RDS(on)max,ꢀID=50ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance1)
Output capacitance1)
Reverse transfer capacitance1)
Ciss
Coss
Crss
-
-
-
3100 4000 pF
VGS=0ꢀV,ꢀVDS=75ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=75ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=75ꢀV,ꢀf=1ꢀMHz
770
19
1000 pF
33
-
pF
ns
VDD=75ꢀV,ꢀVGS=10ꢀV,ꢀID=50ꢀA,
RG,ext=3ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
9
VDD=75ꢀV,ꢀVGS=10ꢀV,ꢀID=50ꢀA,
RG,ext=3ꢀΩ
4
-
-
-
ns
ns
ns
VDD=75ꢀV,ꢀVGS=10ꢀV,ꢀID=50ꢀA,
RG,ext=3ꢀΩ
Turn-off delay time
Fall time
15
4
VDD=75ꢀV,ꢀVGS=10ꢀV,ꢀID=50ꢀA,
RG,ext=3ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Typ.
18
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge1)
Switching charge
Gate charge total1)
Gate plateau voltage
Output charge1)
Qgs
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=75ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=75ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=75ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=75ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=75ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=75ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDS=75ꢀV,ꢀVGS=0ꢀV
Qg(th)
Qgd
12
-
9
13
-
Qsw
14
Qg
41
52
-
Vplateau
Qoss
5.7
116
154
nC
1) Defined by design. Not subject to production test.
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2019-09-18
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ150ꢀV
BSC074N15NS5
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
-
Max.
179
456
1.2
58
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-
A
TC=25ꢀ°C
Diode forward voltage
0.85
29
23
V
VGS=0ꢀV,ꢀIF=50ꢀA,ꢀTj=25ꢀ°C
VR=75ꢀV,ꢀIF=50ꢀA,ꢀdiF/dt=100ꢀA/µs
VR=75ꢀV,ꢀIF=50ꢀA,ꢀdiF/dt=100ꢀA/µs
Reverse recovery time1)
Reverse recovery charge1)
ns
nC
Qrr
46
1) Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2019-09-18
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ150ꢀV
BSC074N15NS5
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
240
120
200
160
120
80
100
80
60
40
20
0
40
0
0
25
50
75
100
125
150
175
200
0
25
50
75
100
125
150
175
200
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
100
single pulse
0.01
0.02
1 µs
0.05
0.1
0.2
0.5
10 µs
102
101
100 µs
10-1
1 ms
100
DC
10 ms
10-1
10-2
10-2
100
101
102
103
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2019-09-18
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ150ꢀV
BSC074N15NS5
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
500
20.0
10 V
6.5 V
6 V
17.5
7 V
400
300
200
100
0
8 V
15.0
12.5
10.0
7.5
8 V
7 V
10 V
5.0
6.5 V
6 V
2.5
0.0
0
1
2
3
4
5
0
40
80
120
160
200
240
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
200
20.0
175
150
125
100
75
17.5
15.0
12.5
10.0
7.5
175 °C
50
5.0
25 °C
175 °C
25
0
2.5
25 °C
0.0
0
1
2
3
4
5
6
7
0
2
4
6
8
10
VGSꢀ[V]
VGSꢀ[V]
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
RDS(on)=f(VGS),ꢀID=50ꢀA;ꢀparameter:ꢀTj
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2019-09-18
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ150ꢀV
BSC074N15NS5
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
2.4
5
2.0
1.6
1.2
0.8
0.4
0.0
4
3
2
1
0
1360 µA
136 µA
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj),ꢀID=50ꢀA,ꢀVGS=10ꢀV
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
103
25 °C
25 °C, max
175 °C
175 °C, max
Ciss
103
102
101
102
101
100
Coss
Crss
125
0
25
50
75
100
150
0.00
0.25
0.50
0.75
1.00
1.25
1.50
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2019-09-18
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ150ꢀV
BSC074N15NS5
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
102
10
30 V
75 V
120 V
8
6
4
2
0
101
25 °C
100 °C
100
150 °C
10-1
100
101
102
103
0
10
20
30
40
50
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start
VGS=f(Qgate),ꢀID=50ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
160
158
156
154
152
150
148
146
144
-80
-40
0
40
80
120
160
200
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2019-09-18
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ150ꢀV
BSC074N15NS5
5ꢀꢀꢀꢀꢀPackageꢀOutlines
DOCUMENT NO.
Z8B00187559
MILLIMETERS
DIMENSION
REVISION
MIN.
MAX.
1.10
0.54
0.05
01
A
b
-
0.34
-
SCALE 10:1
b1
c
0.20
0
1
2mm
D
4.90
4.25
5.90
4.00
3.14
0.20
5.10
4.45
6.10
4.20
3.34
0.40
D1
E
EUROPEAN PROJECTION
E1
E2
E3
e
1.27
(0.37)
K2
L
0.60
0.43
0.80
0.63
ISSUE DATE
14.12.2017
L1
L2
(0.25)
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀTSON-8-3,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2019-09-18
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ150ꢀV
BSC074N15NS5
RevisionꢀHistory
BSC074N15NS5
Revision:ꢀ2019-09-18,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2019-09-18
Trademarks
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TechnologiesꢀOfficeꢀ(www.infineon.com).
Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2019-09-18
相关型号：
BSC076N06NS3 G
OptiMOS ™ 60V 是交换模式电源 (SMPS)中的同步整流的理想之选，例如服务器和台式机以及平板电脑充电器中的电源。此外，这些器件可用于电机控制、太阳能微逆变器和快速开关直流-直流转换器等广泛工业应用。
INFINEON
BSC076N06NS3GATMA1
Power Field-Effect Transistor, 14A I(D), 60V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
BSC077N12NS3 G
120V OptiMOS™ 系列提供业内最低导通电阻和最快开关性能，适用于各种应用，支持实现卓越性能。120V OptiMOS™ 技术带来全新可能性，帮助实现优化解决方案。
INFINEON
BSC077N12NS3GATMA1
Power Field-Effect Transistor, 13.4A I(D), 120V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
BSC077N12NS3GXT
Power Field-Effect Transistor, 13.4A I(D), 120V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
BSC079N03LSCGATMA1
Power Field-Effect Transistor, 14A I(D), 30V, 0.0127ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
BSC079N03SGAUMA1
Power Field-Effect Transistor, 14.6A I(D), 30V, 0.0116ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
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