BSC077N12NS3 G [INFINEON]
120V OptiMOS™ 系列提供业内最低导通电阻和最快开关性能，适用于各种应用，支持实现卓越性能。120V OptiMOS™ 技术带来全新可能性，帮助实现优化解决方案。;
| 型号： | BSC077N12NS3 G |
| 厂家： | 
Infineon |
| 描述： | 120V OptiMOS™ 系列提供业内最低导通电阻和最快开关性能，适用于各种应用，支持实现卓越性能。120V OptiMOS™ 技术带来全新可能性，帮助实现优化解决方案。 开关 |
| 文件： | 总13页 (文件大小：1443K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSC077N12NS3ꢀG
MOSFET
OptiMOSTM3ꢀPower-Transistor,ꢀ120ꢀV
SuperSO8
5
8
6
7
7
Features
6
5
8
•ꢀN-channel,ꢀnormalꢀlevel
•ꢀExcellentꢀgateꢀchargeꢀxꢀRDS(on)ꢀproductꢀ(FOM)
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)
•ꢀ150ꢀ°Cꢀoperatingꢀtemperature
4
3
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC1)ꢀꢀforꢀtargetꢀapplication
•ꢀIdealꢀforꢀhigh-frequencyꢀswitchingꢀandꢀsynchronousꢀrectification
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
1
2
2
3
1
4
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
S 1
8 D
7 D
Parameter
Value
120
7.7
Unit
S 2
S 3
G 4
VDS
V
6 D
5 D
RDS(on),max
ID
mΩ
A
98
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
BSC077N12NS3 G
PG-TDSON-8
077N12NS
-
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.ꢀ2.8,ꢀꢀ2015-12-15
OptiMOSTM3ꢀPower-Transistor,ꢀ120ꢀV
BSC077N12NS3ꢀG
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.ꢀ2.8,ꢀꢀ2015-12-15
OptiMOSTM3ꢀPower-Transistor,ꢀ120ꢀV
BSC077N12NS3ꢀG
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
-
-
98
61
13.4
TC=25ꢀ°C
Continuous drain current
ID
A
TC=100ꢀ°C
TA=25ꢀ°C,ꢀRthJA=45ꢀK/W1)
Pulsed drain current2)
Avalanche energy, single pulse
Gate source voltage
ID,pulse
EAS
-
-
-
-
-
392
330
20
A
TC=25ꢀ°C
-
mJ
V
ID=50ꢀA,ꢀRGS=25ꢀΩ
VGS
Ptot
-20
-
-
Power dissipation
139
W
TC=25ꢀ°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
150
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case,
bottom
RthJC
RthJC
RthJA
RthJA
-
0.5
0.9
K/W
K/W
K/W
K/W
-
-
-
-
Thermal resistance, junction - case,
top
-
-
-
-
-
-
18
75
50
Thermal resistance, junction - ambient,
minimal footprint
Thermal resistance, junction - ambient,
6 cm2 cooling area1)
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2) see Diagram 3
Final Data Sheet
3
Rev.ꢀ2.8,ꢀꢀ2015-12-15
OptiMOSTM3ꢀPower-Transistor,ꢀ120ꢀV
BSC077N12NS3ꢀG
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
120
2
Typ.
Max.
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
-
-
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
3
4
VDS=VGS,ꢀID=110ꢀµA
-
-
0.01
10
1
100
VDS=100ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=100ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
IDSS
µA
nA
Gate-source leakage current
Drain-source on-state resistance
Gate resistance1)
IGSS
RDS(on)
RG
-
1
100
7.7
1.5
-
VGS=20ꢀV,ꢀVDS=0ꢀV
-
6.6
1
mΩ VGS=10ꢀV,ꢀID=50ꢀA
-
Ω
-
Transconductance
gfs
40
80
S
|VDS|>2|ID|RDS(on)max,ꢀID=50ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics1)ꢀ
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Ciss
Coss
Crss
-
-
-
4300 5700 pF
VGS=0ꢀV,ꢀVDS=60ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=60ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=60ꢀV,ꢀf=1ꢀMHz
Output capacitance
550
28
730
49
pF
pF
Reverse transfer capacitance
VDD=60ꢀV,ꢀVGS=10ꢀV,ꢀID=25ꢀA,
RG,ext=2.7ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
15
8
-
-
-
-
ns
ns
ns
ns
VDD=60ꢀV,ꢀVGS=10ꢀV,ꢀID=25ꢀA,
RG,ext=2.7ꢀΩ
VDD=60ꢀV,ꢀVGS=10ꢀV,ꢀID=25ꢀA,
RG,ext=2.7ꢀΩ
Turn-off delay time
Fall time
26
7
VDD=60ꢀV,ꢀVGS=10ꢀV,ꢀID=25ꢀA,
RG,ext=2.7ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Typ.
21
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total1)
Gate plateau voltage
Output charge1)
Qgs
-
-
-
-
-
-
-
nC
nC
nC
nC
V
VDD=60ꢀV,ꢀID=25ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=60ꢀV,ꢀID=25ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=60ꢀV,ꢀID=25ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=60ꢀV,ꢀID=25ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=60ꢀV,ꢀID=25ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=60ꢀV,ꢀVGS=0ꢀV
Qgd
15
-
Qsw
Qg
29
-
66
88
-
Vplateau
Qoss
4.7
76
100
nC
1) Defined by design. Not subject to production test.
2) See ″Gate charge waveforms″ for parameter definition.
Final Data Sheet
4
Rev.ꢀ2.8,ꢀꢀ2015-12-15
OptiMOSTM3ꢀPower-Transistor,ꢀ120ꢀV
BSC077N12NS3ꢀG
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
98
392
1.2
-
Diode continous forward current
Diode pulse current
IS
-
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-
A
TC=25ꢀ°C
Diode forward voltage
0.9
98
V
VGS=0ꢀV,ꢀIF=50ꢀA,ꢀTj=25ꢀ°C
VR=60ꢀV,ꢀIF=25,ꢀdiF/dt=100ꢀA/µs
VR=60ꢀV,ꢀIF=25,ꢀdiF/dt=100ꢀA/µs
Reverse recovery time1)
Reverse recovery charge1)
ns
nC
Qrr
264
-
1) Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.ꢀ2.8,ꢀꢀ2015-12-15
OptiMOSTM3ꢀPower-Transistor,ꢀ120ꢀV
BSC077N12NS3ꢀG
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
160
120
100
80
60
40
20
0
120
80
40
0
0
40
80
120
160
0
40
80
120
160
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
100
1 µs
0.5
10 µs
100 µs
102
101
100
10-1
0.2
0.1
1 ms
10 ms
10-1
0.05
0.02
0.01
DC
single pulse
10-2
10-1
100
101
102
103
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.8,ꢀꢀ2015-12-15
OptiMOSTM3ꢀPower-Transistor,ꢀ120ꢀV
BSC077N12NS3ꢀG
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
160
20
10 V
4.5 V
7 V
5 V
6 V
5.5 V
6 V
120
15
80
10
5.5 V
7 V
10 V
40
5
0
5 V
4.5 V
0
0
1
2
3
4
5
0
50
100
150
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
160
160
120
80
120
80
40
0
40
150 °C
25 °C
0
0
2
4
6
8
0
20
40
60
80
100
120
VGSꢀ[V]
IDꢀ[A]
ID=f(VGS);ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
gfs=f(ID);ꢀTj=25ꢀ°C
Final Data Sheet
7
Rev.ꢀ2.8,ꢀꢀ2015-12-15
OptiMOSTM3ꢀPower-Transistor,ꢀ120ꢀV
BSC077N12NS3ꢀG
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
20
4.0
3.5
1100 µA
15
3.0
110 µA
2.5
10
2.0
1.5
1.0
0.5
0.0
98 %
typ
5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj);ꢀID=50ꢀA;ꢀVGS=10ꢀV
VGS(th)=f(Tj);ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
103
Ciss
25 °C
150 °C
25 °C, 98%
150 °C, 98%
Coss
103
102
101
100
102
101
100
Crss
0
20
40
60
80
0.0
0.5
1.0
1.5
2.0
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.8,ꢀꢀ2015-12-15
OptiMOSTM3ꢀPower-Transistor,ꢀ120ꢀV
BSC077N12NS3ꢀG
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
102
10
96 V
8
6
4
2
0
25 °C
60 V
100 °C
125 °C
24 V
101
100
100
101
102
103
0
20
40
60
80
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj(start)
VGS=f(Qgate);ꢀID=25ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Gate charge waveforms
135
130
125
120
115
110
105
-60
-20
20
60
100
140
180
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.8,ꢀꢀ2015-12-15
OptiMOSTM3ꢀPower-Transistor,ꢀ120ꢀV
BSC077N12NS3ꢀG
5ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TDSON-8,ꢀdimensionsꢀinꢀmm
Final Data Sheet
10
Rev.ꢀ2.8,ꢀꢀ2015-12-15
OptiMOSTM3ꢀPower-Transistor,ꢀ120ꢀV
BSC077N12NS3ꢀG
Dimension in mm
Figureꢀ2ꢀꢀꢀꢀꢀOutlineꢀTDSON-8ꢀTape
Final Data Sheet
11
Rev.ꢀ2.8,ꢀꢀ2015-12-15
OptiMOSTM3ꢀPower-Transistor,ꢀ120ꢀV
BSC077N12NS3ꢀG
Figureꢀ3ꢀꢀꢀꢀꢀOutlineꢀFootprintꢀTDSON-8
Final Data Sheet
12
Rev.ꢀ2.8,ꢀꢀ2015-12-15
OptiMOSTM3ꢀPower-Transistor,ꢀ120ꢀV
BSC077N12NS3ꢀG
RevisionꢀHistory
BSC077N12NS3 G
Revision:ꢀ2015-12-15,ꢀRev.ꢀ2.8
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.7
2.8
Rev. 2.7
2014-10-02
2015-12-15
Update of dynamic parameters td(on), td(off), tr, tf
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pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
13
Rev.ꢀ2.8,ꢀꢀ2015-12-15
相关型号：
BSC077N12NS3GATMA1
Power Field-Effect Transistor, 13.4A I(D), 120V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
BSC077N12NS3GXT
Power Field-Effect Transistor, 13.4A I(D), 120V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
BSC079N03LSCGATMA1
Power Field-Effect Transistor, 14A I(D), 30V, 0.0127ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
BSC079N03SGAUMA1
Power Field-Effect Transistor, 14.6A I(D), 30V, 0.0116ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
BSC079N10NSGATMA1
Power Field-Effect Transistor, 13.4A I(D), 100V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
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