BGS12SN6 [INFINEON]
BGS12SN6 RF MOS 开关专为 WLAN 和蓝牙应用而设计。2个端口中的任意一个端口均可用作分集天线处理的终端，最高可处理30dBm。该单电源芯片集成了片上 CMOS 逻辑，该逻辑由一个简单的单引脚兼容 CMOS 或 TTL 的控制输入信号驱动。0.1 dB压缩点超出了开关的最大输入功率水平，从而在所有信号电平下实现了线性性能。射频开关插入损耗极低，在 1 GHz 时损耗为 0.25 dB，2.5 GHz 时仅为 0.29 dB。;
| 型号： | BGS12SN6 |
| 厂家： | 
Infineon |
| 描述： | BGS12SN6 RF MOS 开关专为 WLAN 和蓝牙应用而设计。2个端口中的任意一个端口均可用作分集天线处理的终端，最高可处理30dBm。该单电源芯片集成了片上 CMOS 逻辑，该逻辑由一个简单的单引脚兼容 CMOS 或 TTL 的控制输入信号驱动。0.1 dB压缩点超出了开关的最大输入功率水平，从而在所有信号电平下实现了线性性能。射频开关插入损耗极低，在 1 GHz 时损耗为 0.25 dB，2.5 GHz 时仅为 0.29 dB。 局域网 开关 WLAN 蓝牙 无线局域网 驱动 射频 射频开关 |
| 文件： | 总16页 (文件大小：2463K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BGS12SN6
Wideband RF SPDT Switch in small package with 0.77mm2 footprint
Data Sheet
Revision 2.3, 2016-09-07
Power Management & Multimarket
Edition September 7, 2016
Published by
Infineon Technologies AG
81726 Munich, Germany
c
ꢀ2011 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding
the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
BGS12SN6
Revision History
Document No.: BGS12SN6.pdf
Previous Version: Revision v2.2 - 2016-08-03
Page
Subjects (major changes since last revision)
9
Update Test conditions of RF input power
Trademarks of Infineon Technologies AG
AURIXTM, C166TM, CanPAKTM, CIPOSTM, CIPURSETM,CoolGaNTM,CoolMOSTM, CoolSETTM, CoolSiCTM, CORECONTROLTM
,
,
,
,
,
DAVETM, DI-POLTM,EasyPIMTM, EconoBRIDGETM, EconoDUALTM, EconoPACKTM, EconoPIMTM, EiceDRIVERTM, eupecTM
FCOSTM, HITFETTM, HybridPACKTM, ISOFACETM, I2RFTM, IsoPACKTM, MIPAQTM, ModSTACKTM, my-dTM, NovalithICTM
OmniTuneTM
ReverSaveTM
TRENCHSTOPTM
,
OptiMOSTM
,
ORIGATM
SIEGETTM
,
OPTIGATM
SIPMOSTM
,
PROFETTM
,
PRO-SILTM
,
,
PRIMARIONTM
,
PrimePACKTM
thinQ!TM
,
,
RASICTM
TriCoreTM
,
SatRICTM
,
,
,
SOLID FLASHTM
SmartLEWISTM
,
TEMPFETTM
,
.
Other Trademarks
Advance Design SystemTM (ADS) of Agilent Technologies, AMBATM, ARMTM, MULTI-ICETM, PRIMECELLTM, REALVIEWTM
,
THUMBTM of ARM Limited, UK. AUTOSARTM is licensed by AUTOSAR development partnership. BluetoothTM of Bluetooth
SIG Inc. CAT-iqTM of DECT Forum. COLOSSUSTM, FirstGPSTM of Trimble Navigation Ltd. EMVTM of EMVCo, LLC (Visa
Holdings Inc.). EPCOSTM of Epcos AG. FLEXGOTM of Microsoft Corporation. FlexRayTM is licensed by FlexRay Consortium.
HYPERTERMINALTM of Hilgraeve Incorporated. IECTM of Commission Electrotechnique Internationale. IrDATM of Infrared Data
Association Corporation. ISOTM of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLABTM of MathWorks,
Inc. MAXIMTM of Maxim Integrated Products, Inc. MICROTECTM, NUCLEUSTM of Mentor Graphics Corporation. MifareTM of
NXP. MIPITM of MIPI Alliance, Inc. MIPSTM of MIPS Technologies, Inc., USA. muRataTM of MURATA MANUFACTURING CO.,
MICROWAVE OFFICETM (MWO) of Applied Wave Research Inc., OmniVisionTM of OmniVision Technologies, Inc. OpenwaveTM
Openwave Systems Inc. RED HATTM Red Hat, Inc. RFMDTM RF Micro Devices, Inc. SIRIUSTM of Sirius Sattelite Radio Inc.
SOLARISTM of Sun Microsystems, Inc. SPANSIONTM of Spansion LLC Ltd. SymbianTM of Symbian Software Limited. TAIYO
YUDENTM of Taiyo Yuden Co. TEAKLITETM of CEVA, Inc. TEKTRONIXTM of Tektronix Inc. TOKOTM of TOKO KABUSHIKI
KAISHA TA. UNIXTM of X/Open Company Limited. VERILOGTM, PALLADIUMTM of Cadence Design Systems, Inc. VLYNQTM of
Texas Instruments Incorporated. VXWORKSTM, WIND RIVERTM of WIND RIVER SYSTEMS, INC. ZETEXTM of Diodes Zetex
Limited.
Last Trademarks Update 2012-12-13
Data Sheet
3
Revision 2.3 - 2016-09-07
BGS12SN6
Contents
1
2
3
4
5
6
7
Features
7
7
Product Description
Maximum Ratings
Operation Ranges
RF Characteristics
Pin Description
9
9
10
12
12
Package Information
Data Sheet
4
Revision 2.3 - 2016-09-07
BGS12SN6
List of Figures
1
BGS12SN6 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
2
3
4
5
6
7
8
9
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outline (TSNP-6-2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Package Outline (TSNP-6-8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Footprint (TSNP-6-2/-8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Pin 1 Marking (TSNP-6-2 top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Pin 1 Marking (TSNP-6-8 top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Tape Drawing (TSNP-6-2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Tape Drawing (TSNP-6-8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Data Sheet
5
Revision 2.3 - 2016-09-07
BGS12SN6
List of Tables
1
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operation Ranges . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RF Input Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RF Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Mechanical Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
7
8
9
9
9
2
3
4
5
6
7
8
Data Sheet
6
Revision 2.3 - 2016-09-07
BGS12SN6
BGS12SN6 Wideband RF SPDT Switch in small package with 0.77mm2
footprint
1 Features
• 2 high-linearity TRx paths with power handling capability of up to
30 dBm
• High switching speed, ideal for WLAN and Bluetooth applications
• All ports fully bi-directional
• Low insertion loss
• Low harmonic generation
• High port-to-port-isolation
• 0.05 to 6 GHz coverage
• High ESD robustness
• On-chip control logic
• Very small leadless and halogen free package TSNP-6-2(-8)
(0.7x1.1 mm2) with super low height of 0.375 mm
• No decoupling capacitors required if no DC applied on RF lines
• RoHS compliant package
2 Product Description
The BGS12SN6 RF MOS switch is specifically designed for WLAN and Bluetooth applications. Any of the 2 ports
can be used as termination of the diversity antenna handling up to 30 dBm.
This single supply chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible
control input signal. The 0.1 dB compression point exceeds the switch’s maximum input power level, resulting in
linear performance at all signal levels. The RF switch has a very low insertion loss of 0.25 dB in the 1 GHz and 0.29
dB in the 2.5 GHz range.
Unlike GaAs technology, external DC blocking capacitors at the RF ports are only required if DC voltage is applied
externally.
The BGS12SN6 RF switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs
with the economy and integration of conventional CMOS including the inherent higher ESD robustness.
The device has a very small size of only 0.7x1.1mm2 and a maximum height of 0.375 mm.
Table 1: Ordering Information
Type
Package
Marking
BGS12SN6
TSNP-6-2/-8
T
Data Sheet
7
Revision 2.3 - 2016-09-07
BGS12SN6
RFin
BGS12SN6
RF1
RF2
SPDT
Decoder + ESD
Protection
Figure 1: BGS12SN6 Block Diagram
Table 2: Truth Table
Switched Paths
RFin - RF1
Ctrl
0
RFin - RF2
1
Data Sheet
8
Revision 2.3 - 2016-09-07
BGS12SN6
3 Maximum Ratings
Table 3: Maximum Ratings at TA = 25 ◦C, unless otherwise specified
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
-0.5
0
Typ.
Max.
3.6
0
Supply Voltage
Vdd
–
–
V
V
–
Maximum DC-Voltage on Other Pins VDC
No external DC voltage
allowed
–
Storage Temperature Range
RF Input Power
TSTG
PRF
Tj
-65
–
–
–
–
150
32
◦C
dBm CW, 50 Ohm
Junction Temperature
ESD Capability
–
125
◦C
–
Human Body Model 1)
ESD Capability RFin Port 2)
VESD_HBM −1000
VESD_RFin −8
–
–
+1000
+8
V
–
kV
RFin versus GND, with
27 nH shunt inductor
1) Human Body Model ANSI/ESDA/JEDEC JS-001-2012 (R = 1.5 kΩ, C = 100 pF).
2) IEC 61000-4-2 (R = 330 Ω, C = 150 pF), contact discharge.
Attention:
Stresses above the max. values listed here may cause permanent damage to the device. Exposure to ab-
solute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are
absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit.
4 Operation Ranges
Table 4: Operation Ranges
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
-40
Typ.
25
–
Max.
85
Ambient Temperature
RF Frequency
TA
◦C
GHz
V
–
–
–
–
–
f
0.1
6
Supply Voltage
Vdd
1.8
–
3.5
0.43
VDD
Control Voltage Low
Control Voltage High
VCtrl_L
VCtrl_H
-0.3
1.35
–
V
–
V
Table 5: RF Input Power
Parameter
Symbol
Values
Typ.
–
Unit
Note / Test Condition
Min.
Max.
RF Input Power (50Ω)
PIn
–
30
dBm CW, 50 Ohm
Data Sheet
9
Revision 2.3 - 2016-09-07
BGS12SN6
5 RF Characteristics
Table 6: RF Characteristics
Test Conditions (unless otherwise specified):
• Terminating port impedance: Z0 = 50 Ω
• Temperature range: TA = -40 ... +85 ◦C
• Supply voltage: VDD = 1.8 ... 3.4 V
• Input power: PIN = 0 dBm
Parameter
Symbol
Values
Typ.
Unit
Note / Test Condition
Min.
Max.
Insertion Loss
–
–
–
–
–
–
0.23
0.25
0.28
0.29
0.53
0.65
0.42
0.43
0.45
0.50
0.78
0.90
dB
dB
dB
dB
dB
dB
699-824 MHz
824-915 MHz
1710-1910 MHz
2170-2690 MHz
5000 MHz
All RF Ports
Insertion Loss1
All RF Ports
Return Loss
All RF Ports
IL
6000 MHz
–
–
–
–
–
–
0.23
0.25
0.28
0.29
0.53
0.65
0.35
0.35
0.40
0.45
0.70
0.85
dB
dB
dB
dB
dB
dB
699-824 MHz
824-915 MHz
1710-1910 MHz
2170-2690 MHz
5000 MHz
IL
6000 MHz
22
22
20
17
12
12
30
30
25
20
18
16
–
–
–
–
–
–
dB
dB
dB
dB
dB
dB
699-824 MHz
824-915 MHz
1710-1910 MHz
2170-2690 MHz
5000 MHz
RL
6000 MHz
1
TA = +25 ◦C, VDD = 2.6 V
Data Sheet
10
Revision 2.3 - 2016-09-07
BGS12SN6
Parameter
Isolation
Symbol
Values
Typ.
Unit
Note / Test Condition
Min.
Max.
36
35
28
26
15
15
43
42
34
30
18
18
42
40
32
28
19
18
47
45
38
33
21
21
–
–
–
–
–
–
–
–
–
–
–
–
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
699-824 MHz
824-915 MHz
1710-1910 MHz
2170-2690 MHz
5000 MHz
RFin to RF1/RF2 Port
ISORFin−RFx
6000 MHz
699-824 MHz
824-915 MHz
1710-1910 MHz
2170-2690 MHz
5000 MHz
RF1 to RF2 Port /
RF2 to RF1 Port
ISOPort−Port
6000 MHz
Harmonic Generation up to 12.75 GHz
All RF Ports, 2nd Harmonic
–
–
-80
-87
-75
-80
dBc
dBc
VDD = 2.85V, TA = 25 ◦C,
PHarm
All RF Ports, 3rd Harmonic
f
=
824 MHz, Pin
=
27.5 dBm, 50 % duty cycle,
50Ω
Compression Point 0.1dB
P0.1dB
P0.1dB
–
–
34
dBm
–
Intermodulation Distortion in Rx Band
IMD2
IMD3
IMD2
IMD3
–
–
-110
-130
-100
-120
dBm Tx = 10 dBm, Interferer = -15
dBm dBm, 50Ω
Switching Time and Current Consumption
RF Rise Time
t10%−90%
tCtrl−RF
–
–
60
100
500
ns
ns
10% - 90% of RF Signal
Ctrl to RF Time
400
50% of Ctrl Signal to 90% of
RF Signal
Power Up Settling Time
Supply Current
tPUP
Idd
–
–
–
5
15
µs
After power down
100
1
180
10
µA
µA
–
–
Control Current
ICtrl
Note: All electrical characteristics are measured with all RF ports terminated by 50 Ω loads.
Data Sheet
11
Revision 2.3 - 2016-09-07
BGS12SN6
6 Pin Description
Figure 2: Pin Configuration
Table 7: Pin Description
Pin No.
Name
Pin
Type
I/O
Buffer Function
Type
1
2
3
4
5
6
RF2
RF Port 2
Ground
GND
RF1
GND
I/O
RF Port 1
Vdd
PWR
I/O
Supply Voltage
RFin
CTRL
RF Port In
Control Pin
I
7 Package Information
Table 8: Mechanical Data
Parameter
X-Dimension
Y-Dimension
Size
Symbol
Value
Unit
mm
mm
mm2
mm
X
0.7 ± 0.05
1.1 ± 0.05
0.77
Y
Size
H
Height
0.375 +0.025/−0.025
Data Sheet
12
Revision 2.3 - 2016-09-07
BGS12SN6
Top view
Bottom view
+0.025
-0.015
0.375
0.02 MAX.
±0.05
0.7
1)
±0.05
0.2
3
4
2
1
5
6
±0.05
0.4
Pin 1 marking
1) Dimension applies to plated terminals
Figure 3: Package Outline (TSNP-6-2)
TSNP-6-2-PO V01
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ꢙꢓꢚꢚꢓꢛaꢕꢖꢗꢘ
ꢆꢀꢁꢀꢉꢇ
ꢀꢁꢂꢈꢇ
ꢆꢀꢁꢀꢇ
ꢀꢁꢈ
ꢄ
ꢀꢁꢀꢂaꢃꢄꢅꢁ
ꢋꢌꢄꢍꢎꢏꢐꢐ
ꢆꢀꢁꢀꢇ
ꢀꢁꢉ
ꢑꢥ
ꢀꢁꢊ ꢄ
ꢂ
ꢉ
ꢒ
ꢇ
ꢑ
ꢊ
ꢀꢁꢒ
ꢙ
ꢜꢖꢝaꢊaꢛꢞꢟꢠꢖꢝꢡ
ꢌꢋꢍꢜꢢꢑꢢꢣꢢꢜꢏa ꢤꢀꢂ
Figure 4: Package Outline (TSNP-6-8)
Data Sheet
13
Revision 2.3 - 2016-09-07
BGS12SN6
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ꢀꢁꢄ
ꢀꢁꢄ
ꢀꢁꢂꢃ
ꢀꢁꢂꢃ
ꢠꢚꢐꢑꢒꢓꢔꢕmꢐꢡꢔꢓꢟꢒꢑꢚꢚmꢏꢀꢀmꢢꢞꢣ
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ꢅꢆꢇꢈꢉꢊꢉꢂꢋꢉꢌꢉꢍꢈmꢎꢀꢏ
Figure 5: Footprint (TSNP-6-2/-8)
ꢀꢁꢂꢃꢄꢅꢆꢇꢃ
ꢈꢆꢉꢊꢋꢌꢁꢄꢇꢍꢊꢍꢄꢅꢆꢇꢃ
ꢐꢘꢉꢄꢗꢄꢙꢍꢚꢛꢘꢉꢜ
ꢀꢎꢏꢐꢑꢒꢑꢓꢑꢈꢔ ꢕꢖꢗ
Figure 6: Pin 1 Marking (TSNP-6-2 top view)
ꢊꢋꢌꢍꢃꢎꢏꢐꢍ
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Figure 7: Pin 1 Marking (TSNP-6-8 top view)
Data Sheet
14
Revision 2.3 - 2016-09-07
BGS12SN6
0.5
Pin 1
marking
2
0.85
TSNP-6-2-TP V01
Figure 8: Tape Drawing (TSNP-6-2)
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ꢅꢆꢇꢈꢉ
ꢊꢋꢌꢍꢆꢇꢎ
ꢀ
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ꢏꢐꢑꢅꢒꢓꢒꢔꢒꢏꢅꢈ ꢕꢁꢉ
Figure 9: Tape Drawing (TSNP-6-8)
Data Sheet
15
Revision 2.3 - 2016-09-07
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
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INFINEON
BGS16GA14
BGS16GA14 是一款单极六掷（SP6T）分集开关模块，针对高达 3.8 GHz 的无线应用进行了优化。作为引脚和功能兼容的 SP3T-SP8T 产品系列的一部分，其设计为满足芯片组参考设计的要求。该模块采用微型 ATSLP 封装，包括一个具有集成 GPIO 接口的高功率 CMOS SP8T 开关。这个射频开关是基于 LTE 和 WCDMA 的多模手机理想解决方案。
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