BFY450S [INFINEON]
HiRel NPN Silicon RF Transistor; HiRel它NPN硅射频晶体管
| 型号： | BFY450S |
| 厂家： | 
Infineon |
| 描述： | HiRel NPN Silicon RF Transistor |
| 文件： | 总5页 (文件大小：377K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFY450
HiRel NPN Silicon RF Trans is tor
• HiRel Dis crete and Microwave Semiconductor
• For Medium Power Amplifiers
4
1
3
2
• Compression Point P-1dB =19dBm 1.8 GHz
Max. Available Gain Gma = 16dB at 1.8 GHz
• Hermetically sealed microwave package
• Transition Frequency f = 20 GHz
T
• SIEGET 25-Line
Infineon Technologies Grounded Emitter Transistor-
25 GHz f -Line
T
•
Space Qualified
ESA/SCC Detail Spec. No.: 5611/008
Type Variant No. 03
ESD: Electros tatic discharge sensitive device,
observe handling precautions!
Type
Marking Ordering Code
Pin Configuration
Package
1
2
3
4
BFY450 (ql)
(ql) Quality Level:
-
see below
C
E
B
E
Micro-X
P: Professional Quality,
H: High Rel Quality,
S: Space Quality,
Ordering Code:
Ordering Code:
Ordering Code:
Ordering Code:
Q62702F1663
on request
on request
ES: ESA Space Quality,
Q62702F1708
(see order instructions for ordering example)
S e miconductor Group
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BFY450
Maximum Ratings
Parameter
Symbol
VCEO
VCBO
VEBO
IC
Values
4.5
Unit
V
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
15
V
1.5
V
100
10
mA
mA
mW
Base current
IB
Total power dissipation,
Ptot
450
1), 2)
TS ≤ 110°C
Junction temperature
Tj
175
°C
°C
°C
Operating temperature range
Storage temperature range
Thermal Res is tance
Top
Tstg
-65...+175
-65...+175
Junction-soldering point 2)
Rth JS
K/W
< 145
Notes .:
1) At TS = + 110 °C. For TS > + 110 °C derating is required.
2) TS is measured on the collector lead at the soldering point to the pcb.
Electrical Characteris tics
at TA=25°C; unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
100
DC Characteris tics
Collector-base cutoff current
VCB = 5 V, IE = 0
Collector-emitter cutoff current 1.)
VCE = 4.5 V, IB = 1.0µA
Emitter-base cuttoff current
VEB = 1.5 V, IC = 0
ICBO
ICEX
IEBO
hFE
-
-
nA
µA
µA
-
-
-
200
(t.b.d.)
50
-
-
DC current gain
50
90
150
IC = 20 mA, VCE = 1 V
Notes :
1.) This Test assures V(BR)CE0 > 4.5V
S e miconductor Group
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BFY450
Electrical Characteris tics (continued)
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteris tics
Transition frequency
fT
GHz
IC = 90mA, VCE = 3 V, f = 1.0 GHz
IC = 90mA, VCE = 3 V, f = 2.0 GHz
Collector-base capacitance
VCB = 2 V, VBE = vbe = 0, f = 1 MHz
Collector-emitter capacitance
VCE = 2 V, VBE = vbe = 0, f = 1 MHz
Emitter-base capacitance
18
-
22
-
17
-
CCB
CCE
CEB
F
-
0.42
0.9
pF
pF
pF
dB
-
-
-
1.27
2.0
2.6
3
VEB = 0.5V, VCB = vcb = 0, f = 1 MHz
Noise Figure
1.25
2.0
IC = 10 mA, VCE = 2 V, f = 1.8 GHz,
ZS = Zsopt
2
Insertion power gain
|S21e
|
8.0
12
-
-
-
dB
IC = 50 mA, VCE = 2 V, f = 1.8 GHz
ZS = ZL = 50 Ω
1.)
Power gain
-
-
16.0
19
dB
Gma
P-1dB
IC = 50 mA, VCE = 2 V, f = 1.8 GHz
ZS = ZSopt , ZL = ZLopt
1dB Compression point
IC = 50 mA, VCE = 2 V, f = 1.8 GHz
ZS = ZSopt , ZL = ZLopt
dBm
Notes .:
S21
S21
S12
1) Gma
=
(k − k2 −1) , Gms =
S12
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BFY450
Order Ins tructions :
Full type variant including quality level must be specified by the orderer. For HiRel Discrete
and Microwave Semiconductors the ordering code specifies device family and quality level.
Ordering Form:
Ordering Code: Q..........
BFY450 (ql)
(ql): Quality Level
Ordering Example:
Ordering Code: Q62702F1708
BFY450 ES
For BFY450 in ESA Space Quality Level
Further Informations :
See our WWW-Pages:
- Discrete and RF-Semiconductors (Small Signal Semiconductors)
www.infine on.com/products/discrete/hirel.htm
- HiRel Discrete and Microwave Semiconductors
www.infineon.com/products/discrete/hirel.htm
Please contact also our marketing division :
Tel.:
++89 234 24480
++89 234 28438
Fax.:
e-mail:
martin.wimmers@infineon.com
Infineon Technologies Semiconductors,
High Frequency Products Marketing,
P.O.Box 801709,
Address:
D-81617 Munich
S e miconductor Group
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BFY450
Micro-X Package
Publis hed by Infineon Technologies Semiconductors ,
High Frequency Products Marketing, P.O.Box 801709,
D-81617 Munich.
Infineon Technologies AG 1998. All Rights Res erved.
4
As far as patents or other rights of third parties are
concerned, liability is only assumed for components per
se, not for applications, processes and circuits
implemented within components or assemblies.
3
1
The information describes the type of component and shall
not be considered as assured characteristics.
2
Terms of delivery and rights to change design reserved.
For questions on technology, delivery and prices please
contact the Offices of Semiconductor Group in Germany or
the
Infineon
Technologies
Companies
and
Representatives woldwide (see address list).
Due to technical requirements components may contain
dangerous substances. For information on the type in
question
please
contact your nearest Infineon
Technologies Office, Semiconductor Group.
Infineon Technologies Semiconductors is a certified CECC
and QS9000 manufacturer (this includes ISO 9000).
S e miconductor Group
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