BFY450_11 [INFINEON]
HiRel NPN Silicon RF Transistor; HiRel它NPN硅射频晶体管
| 型号： | BFY450_11 |
| 厂家： | 
Infineon |
| 描述： | HiRel NPN Silicon RF Transistor |
| 文件： | 总4页 (文件大小：146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFY450
HiRel NPN Silicon RF Transistor
4
1
3
HiRel Discrete and Microwave Semiconductor
For Medium Power Amplifiers
Compression Point P-1dB =19dBm 1.8 GHz
Max. Available Gain Gma = 16dB at 1.8 GHz
2
Hermetically sealed microwave package
Transition Frequency f = 20 GHz
T
SIEGET 25-Line
Infineon Technologies Grounded Emitter Transistor-
25 GHz f -Line
T
Space Qualified
ESA/SCC Detail Spec. No.: 5611/008
Type Variant No. 03
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type
Marking Ordering Code
Pin Configuration
Package
1
2
3
4
BFY450 (ql)
(ql) Quality Level:
-
see below
C
E
B
E
Micro-X
P: Professional Quality
H: High Rel Quality
S: Space Quality
ES: ESA Space Quality
(see order instructions for ordering example)
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V2, February 2011
BFY450
Maximum Ratings
Parameter
Symbol
VCEO
VCBO
VEBO
IC
Values
4.5
Unit
V
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
15
V
1.5
V
100
10
mA
mA
mW
Base current
IB
Total power dissipation,
Ptot
450
1), 2)
TS 110°C
Junction temperature
Tj
175
C
C
C
Operating temperature range
Storage temperature range
Thermal Resistance
Top
Tstg
-65...+175
-65...+175
Junction-soldering point 2)
Rth JS
K/W
< 145
Notes.:
1) At TS = + 110 °C. For TS > + 110 °C derating is required.
2) TS is measured on the collector lead at the soldering point to the pcb.
Electrical Characteristics
at TA=25°C; unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
100
DC Characteristics
Collector-base cutoff current
VCB = 5 V, IE = 0
Collector-emitter cutoff current 1.)
VCE = 4.5 V, IB = 1.0µA
Emitter-base cuttoff current
VEB = 1.5 V, IC = 0
ICBO
ICEX
IEBO
hFE
-
-
nA
µA
A
-
-
-
200
(t.b.d.)
50
-
-
DC current gain
50
90
150
IC = 20 mA, VCE = 1 V
Notes:
1.) This Test assures V(BR)CE0 > 4.5V
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BFY450
Electrical Characteristics (continued)
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Transition frequency
fT
GHz
IC = 90mA, VCE = 3 V, f = 1.0 GHz
IC = 90mA, VCE = 3 V, f = 2.0 GHz
Collector-base capacitance
VCB = 2 V, VBE = vbe = 0, f = 1 MHz
Collector-emitter capacitance
VCE = 2 V, VBE = vbe = 0, f = 1 MHz
Emitter-base capacitance
VEB = 0.5V, VCB = vcb = 0, f = 1 MHz
Noise Figure
18
-
22
-
17
-
CCB
CCE
CEB
F
-
0.42
0.9
pF
pF
pF
dB
-
-
-
1.27
2.0
2.6
3
1.25
2.0
IC = 10 mA, VCE = 2 V, f = 1.8 GHz,
ZS = Zsopt
Insertion power gain
|S21e|2
8.0
12
-
-
-
dB
IC = 50 mA, VCE = 2 V, f = 1.8 GHz
ZS = ZL = 50
1.)
Power gain
-
-
16.0
19
dB
Gma
IC = 50 mA, VCE = 2 V, f = 1.8 GHz
ZS = ZSopt , ZL = ZLopt
1dB Compression point
IC = 50 mA, VCE = 2 V, f = 1.8 GHz
ZS = ZSopt , ZL = ZLopt
P-1dB
dBm
Notes.:
S21
S21
S12
1) Gma
(k k2 1)
,
Gms
S12
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BFY450
Micro-X Package
4
Edition 2011-02
3
Published by
1
Infineon Technologies AG
85579 Neubiberg, Germany
2
© Infineon Technologies AG 2011
All Rights Reserved.
Attention please!
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics (“Beschaffenheitsgarantie“). With respect to any examples or
hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual
property rights of an third party.
Information
For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For
information on the types in question please contact your nearest Infineon Technologies
Office.
Infineon Technologies Components may only be used in life-support devices or systems with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system, or to affect
the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body, or to
support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be endangered.
IFAG IMM RPD D HIR
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