BFR949T-E6433 [INFINEON]
Transistor;
| 型号： | BFR949T-E6433 |
| 厂家： | 
Infineon |
| 描述： | Transistor |
| 文件： | 总10页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFR949T
NPN Silicon RF Transistor
• For low noise, high-gain broadband amplifiers at
collector currents from 1 mA to 20 mA
2
1
3
• f = 9 GHz, F = 1 dB at 1 GHz
T
1)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BFR949T
RK
SC75
1 = B
2 = E
3 = C
Maximum Ratings
Parameter
Symbol
Value
10
Unit
V
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
V
V
V
CEO
CES
CBO
EBO
20
20
1.5
50
mA
mW
°C
I
I
C
5
Base current
B
2)
250
Total power dissipation
P
tot
T ≤ 75 °C
S
150
Junction temperature
Ambient temperature
Storage temperature
T
T
T
j
-65 ... 150
-65 ... 150
A
stg
Thermal Resistance
Parameter
Symbol
Value
Unit
3)
K/W
Junction - soldering point
R
≤ 300
thJS
1Pb-containing package may be available upon special request
2T is measured on the collector lead at the soldering point to the pcb
S
3For calculation of R
please refer to Application Note Thermal Resistance
thJA
2007-03-30
1
BFR949T
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ. max.
Unit
min.
DC Characteristics
10
-
-
V
Collector-emitter breakdown voltage
V
(BR)CEO
I = 1 mA, I = 0
C
B
-
-
100 µA
100 nA
0.1 µA
Collector-emitter cutoff current
= 20 V, V = 0
I
CES
V
CE
BE
-
-
-
-
Collector-base cutoff current
= 10 V, I = 0
I
CBO
V
CB
E
Emitter-base cutoff current
= 1 V, I = 0
I
EBO
V
EB
C
100
140
180
-
DC current gain-
I = 5 mA, V = 6 V, pulse measured
h
FE
C
CE
2007-03-30
2
BFR949T
Electrical Characteristics at T = 25°C, unless otherwise specified
Parameter
Symbol
Values
typ. max.
Unit
min.
AC Characteristics (verified by random sampling)
7
9
-
GHz
Transition frequency
f
T
I = 15 mA, V = 6 V, f = 1 GHz
C
CE
-
-
-
0.31
0.4 pF
Collector-base capacitance
= 10 V, f = 1 MHz, V = 0 ,
C
C
C
F
cb
ce
eb
V
CB
BE
emitter grounded
0.2
0.7
-
-
Collector emitter capacitance
V
= 10 V, f = 1 MHz, V = 0 ,
BE
CE
base grounded
Emitter-base capacitance
V
= 0.5 V, f = 1 MHz, V = 0 ,
CB
EB
collector grounded
Noise figure
dB
I = 5 mA, V = 6 V, Z = Z
,
C
CE
S
Sopt
f = 1 GHz
-
1
2.5
-
I = 3 mA, V = 8 V, Z = Z
,
C
CE
S
Sopt
f = 1.8 GHz
-
-
1.3
20
1)
Power gain
G
G
-
-
ms
ma
I = 10 mA, V = 8 V, Z = Z
,
,
C
CE
S
Sopt
Z = Z
, f = 900 MHz
Lopt
L
1)
-
14
-
dB
Power gain, maximum available
I = 10 mA, V = 8 V, Z = Z
Sopt
C
CE
S
Z = Z
, f = 1.8 GHz
Lopt
L
2
Transducer gain
|S
|
dB
21e
I = 15 mA, V = 6 V, Z = Z = 50Ω ,
C
CE
S
L
f = 1 GHz
13
-
16
11
-
-
I = 10 mA, V = 8 V, Z = Z = 50Ω ,
C
CE
S
L
f = 1.8 GHz
1/2
= |S / S | (k-(k²-1) ), G
21 12
1G
ma
= |S / S
|
ms
21 12
2007-03-30
3
BFR949T
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transistor Chip Data:
4.36
30
fA
V
-
1.085
1.86
-
IS =
BF =
120
NF =
mA
-
pF
-
VAF =
NE =
VAR =
NC =
RBM =
CJE =
TF =
IKF =
BR =
IKR =
RB =
RE =
VJE =
XTF =
PTF =
MJC =
CJS =
NK =
FC =
0.152
33.322
0.063
20.766
0.101
0.568
0.00894
0
ISE =
NR =
1.998
41.889
1.569
0.823
291
1.095
3.68
-
V
A
pA
mA
ISC =
IRB =
RC =
-
72.2
Ω
-
0.849
0.456
0.198
459
Ω
fF
Ω
-
V
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
8.77
1.336
1.048
1.39
0
ps
mA
V
V
-
deg
fF
-
ITF =
VJC =
TR =
MJS =
.
0.217
0.75
0.334
0
-
fF
ns
-
V
1.11
eV
K
0.5
-
-
300
-
0.924
TNOM
All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil- und Satellitentechnik (IMST)
Package Equivalent Circuit:
0.762
0.706
0.382
62
L =
nH
nH
nH
fF
1
C4
L =
2
L =
3
C1
C =
1
84
C =
fF
2
180
7
C =
fF
3
L 2
L 3
Transistor
Chip
B’
C’
C =
fF
B
C
4
40
C =
fF
5
E’
48
C =
fF
6
C6
C5
Valid up to 6GHz
C2
C3
L 1
EHA07524
E
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http://www.infineon.com
2007-03-30
4
BFR949T
Total power dissipation P = ƒ(T )
Permissible Pulse Load R
= ƒ(t )
tot
S
thJS
p
10 3
300
mW
200
150
100
50
10 2
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
10 1
0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
°C
s
0
20
40
60
80
100 120
150
T
t
p
S
Permissible Pulse Load
Collector-base capacitance C = ƒ(V
)
CB
cb
P
/P
= ƒ(t )
f = 1MHz
totmax totDC
p
10 2
10 1
10 0
0.6
pF
0.4
0.3
0.2
0.1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
0
5
10
15
25
s
V
t
V
CB
p
2007-03-30
5
BFR949T
Transition frequency f = ƒ(I )
Power gain G , G = ƒ(I )
T
C
ma
ms
C
V
= parameter
f = 0.9GHz
CE
V
= parameter
CE
10
22
10V
10V
8V
8V
GHz
dB
5V
3V
2V
6
4
2
0
16
13
10
7
5V
3V
2V
1V
1V
0.7V
0.7V
mA
mA
0
5
10 15 20 25 30 35
45
0
5
10 15 20 25 30 35
45
I
I
C
C
Power gain G , G = ƒ(I )
Power Gain G , G = ƒ(f)
ma ms
ma
ms
C
f = 1.8GHz
V
= parameter, I = 10 mA
CE
C
V
= parameter
CE
16
45
10V
8V
dB
5V
3V
2V
dB
35
30
25
20
15
10
5
8
4
0
1V
10V
0.7V
5V
1V
0
mA
GHz
0
5
10 15 20 25 30 35
45
0
1
2
3
4
5
7
I
f
C
2007-03-30
6
BFR949T
Power Gain |S |² = ƒ(f)
Power Gain G , G = ƒ(V ):
ma ms CE
21
V
= parameter, I = 10 mA
|S |² = ƒ(V ): - - - -
21 CE
CE
C
f = parameter, I = 10 mA
C
25
30
0.9GHz
dB
dB
0.9GHz
1.8GHz
20
15
10
5
15
10
5
1.8GHz
10V
5V
1V
GHz
0
0
V
0
1
2
3
4
5
7
0
3
6
12
V
f
CE
2007-03-30
7
Package SC75
BFR949T
Package Outline
±0.2
1.6
+0.1
0.2
±0.1
-0.05
0.1 MAX. 0.7
A
3
1
2
+0.1
0.2
-0.05
±0.05
0.15
0.5
0.5
M
M
0.10
0.2
A
Foot Print
0.4
0.4
0.5 0.5
Marking Layout (Example)
2005, December
Date code
BCR108T
Type code
Pin 1
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2 MAX.
0.45
Pin 1
1.75
0.9
2007-03-30
8
BFR949T
Date Code marking for discrete packages with
one digit (SCD80, SC79, SC751)) CES-Code
Month 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014
01
02
03
04
05
06
07
08
09
10
11
12
a
b
c
d
e
f
p
q
r
A
B
C
D
E
F
G
H
J
P
Q
R
S
T
U
V
X
Y
Z
4
a
b
c
d
e
f
p
q
r
A
B
C
D
E
F
G
H
J
P
Q
R
S
T
U
V
X
Y
Z
4
a
b
c
d
e
f
p
q
r
A
B
C
D
E
F
G
H
J
P
Q
R
S
T
U
V
X
Y
Z
4
s
t
s
t
s
t
u
v
x
y
z
2
3
u
v
x
y
z
2
3
u
v
x
y
z
2
3
g
h
j
g
h
j
g
h
j
k
l
K
L
k
l
K
L
k
l
K
L
n
N
5
n
N
5
n
N
5
1) New Marking Layout for SC75, implemented at October 2005.
.
2007-03-30
9
BFR949T
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
2007-03-30
10
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