BFR94A [NXP]
NPN 3.5 GHz wideband transistor; NPN 3.5 GHz宽带晶体管
| 型号： | BFR94A |
| 厂家： | 
NXP |
| 描述： | NPN 3.5 GHz wideband transistor |
| 文件： | 总9页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFR94A
NPN 3.5 GHz wideband transistor
September 1995
Product specification
File under Discrete Semiconductors, SC14
Philips Semiconductors
Product specification
NPN 3.5 GHz wideband transistor
BFR94A
DESCRIPTION
PINNING
PIN
NPN resistance-stabilized transistor
in a SOT122E capstan envelope.
DESCRIPTION
collector
1
2
3
4
It features extremely low cross
modulation, intermodulation and
second order intermodulation
distortion. Due to its high transition
frequency, it has a high power gain, in
conjunction with good wideband
properties, and low noise up to high
frequencies.
emitter
base
lfpage
4
emitter
3
1
2
MBB904
It is primarily intended for CATV and
MATV applications.
The BFR94A is a replacement for the
BFR94. The SOT122E footprint is
similar to that of the SOT48, used for
the BFR94.
Fig.1 SOT122E.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
TYP. MAX. UNIT
VCBO
VCEO
IC
open emitter
open base
−
30
25
150
3.5
−
V
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
−
V
−
mA
W
Ptot
fT
up to Tc = 145 °C; f > 1 MHz
−
Ic = 90 mA; VCE = 20 V; f = 500 MHz;
3.5
GHz
Tj = 25 °C
F
noise figure
Ic = 90 mA; VCE = 20 V; f = 200 MHz;
Tamb = 25 °C
8
10
−
dB
dB
dB
dim
d2
intermodulation distortion
Ic = 90 mA; VCE = 20 V;
Vo = 60 dBmV; f(p+q−r) = 194.25 MHz
−63
−
second order intermodulation
distortion
Ic = 90 mA; VCE = 20 V;
Vo = 48 dBmV; fp + fq = 210 MHz
−56
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All
persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
September 1995
2
Philips Semiconductors
Product specification
NPN 3.5 GHz wideband transistor
BFR94A
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
DC collector current
CONDITIONS
open emitter
MIN.
MAX.
30
UNIT
VCBO
VCEO
VCER
VEBO
IC
−
−
−
−
−
−
−
V
open base
25
V
RBE = 100 Ω
open collector
35
V
3
V
150
300
3.5
200
200
mA
mA
W
°C
°C
ICM
peak collector current
total power dissipation
storage temperature
junction temperature
f > 1 MHz
Ptot
up to Tc = 145 °C; f > 1 MHz
Tstg
Tj
−65
−
THERMAL RESISTANCE
SYMBOL
PARAMETER
thermal resistance from junction to case
THERMAL RESISTANCE
Rth j-c
15 K/W
September 1995
3
Philips Semiconductors
Product specification
NPN 3.5 GHz wideband transistor
BFR94A
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IE = 0; VCB = 20 V
MIN. TYP. MAX. UNIT
ICBO
hFE
collector cut-off current
DC current gain
−
−
50
−
µA
IC = 50 mA; VCE = 20 V
30
30
−
−
IC = 150 mA; VCE = 20 V
−
−
fT
transition frequency
IC = 90 mA; VCE = 20 V; f = 500 MHz
3.5
3.5
−
GHz
GHz
IC = 150 mA; VCE = 20 V;
f = 500 MHz
−
−
Cc
collector capacitance
emitter capacitance
IE = ie = 0; VCB = 20 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = 10 mA; VCE = 20 V; f = 1 MHz
f = 1 MHz
−
−
−
−
−
3.5
12
−
−
−
−
−
pF
pF
pF
pF
dB
Ce
Cre
Ccs
GUM
feedback capacitance
collector-stud capacitance
1.3
2
maximum unilateral power gain
(note 1)
IC = 90 mA; VCE = 20 V;
f = 500 MHz; Tamb = 25 °C
13.5
F
noise figure
IC = 90 mA; VCE = 20 V;
f = 200 MHz; Tamb = 25 °C
−
−
8
5
10
dB
dB
IC = 90 mA; VCE = 20 V;
−
f = 500 MHz; Tamb = 25 °C
dim
d2
intermodulation distortion
note 2
note 3
−
−
−63
−
dB
dB
second order intermodulation
distortion
−
−56
Vo
output voltage
see Fig.2 and note 4
−
700
−
mV
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S21
2
--------------------------------------------------------------
GUM = 10 log
dB.
2
1 – S11
1 – S22
2. IC = 90 mA; VCE = 20 V; RL = 75 Ω;
Vp = Vo = 60 dBmV at fp = 196.25 MHz;
Vq = Vo −6 dB at fq = 203.25 MHz;
Vr = Vo −6 dB at fr = 205.25 MHz;
measured at f(p+q−r) = 194.25 MHz.
3. IC = 90 mA; VCE = 20 V;
fp = 66 MHz; fq = 144 MHz; fp + fq = 210 MHz; Vo = 48 dBmV.
4. dim = −60 dB (DIN 45004B); Ic = 90 mA; VCE = 20 V; RL = 75 Ω; Tamb = 25 °C;
Vp = Vo at dim = −60 dB; fp = 495.25 MHz;
Vq = Vo −6 dB; fq = 503.25 MHz;
Vr = Vo −6 dB; fr = 505.25 MHz;
measured at f(p+q−r) = 493.25 MHz.
September 1995
4
Philips Semiconductors
Product specification
NPN 3.5 GHz wideband transistor
BFR94A
MEA496
4
handbook, halfpage
f
T
(GHz)
handbook, halfpage
2.2 nF
3
2.2 nF
V
CC
V
BB
L2
240 Ω
1.5 kΩ
2
1
10 nF
75 Ω
L1
10 nF
1 nF
75 Ω
DUT
19 Ω
MEA497
0
2
3
10
10
10
I
(mA)
C
L1 = L2 = 5 µH Ferroxcube choke, catalogue
VCE = 20 V; f = 500 MHz; Tj = 25 °C.
number 3122 108 20153.
Fig.3 Transition frequency as a function of
collector current.
Fig.2 Intermodulation distortion MATV test circuit.
MEA495
MEA494
30
30
handbook, halfpage
handbook, halfpage
d
d
im
(dB)
40
2
(dB)
40
50
60
70
80
50
60
70
80
0
50
100
150
0
50
100
150
I
(mA)
I
(mA)
C
C
Measured in CATV test circuit.
Measured in CATV test circuit.
VCE = 20 V; Vo = 48 dBmV; f = 210 MHz.
VCE = 20 V; Vo = 60 dBmV;
f(p+q−r) = 194. 25 MHz.
Fig.5 Second order intermodulation distortion as
a function of collector current.
Fig.4 Intermodulation distortion as a function of
collector current.
September 1995
5
Philips Semiconductors
Product specification
NPN 3.5 GHz wideband transistor
BFR94A
1
0.5
2
0.2
5
1000 MHz
1
800
0.5
10
+ j
– j
0.2
2
5
10
0
∞
500
200
10
100
5
0.2
2
0.5
MEA498
1
IC = 90 mA; VCE = 20 V; Tamb = 25 °C.
o = 50 Ω.
Z
Fig.6 Common emitter input reflection coefficient (S11).
90°
120°
60°
100 MHz
150°
30°
200
500
800
1000
+ ϕ
− ϕ
20
10
180°
0°
30°
150°
60°
120°
MEA900
90°
IC = 90 mA; VCE = 20 V; Tamb = 25 °C.
Fig.7 Common emitter forward transmission coefficient (S21).
September 1995
6
Philips Semiconductors
Product specification
NPN 3.5 GHz wideband transistor
BFR94A
90°
120°
60°
150°
30°
1000 MHz
800
500
200
+ ϕ
− ϕ
0.3
0.2
0.1
100
180°
0°
30°
150°
60°
120°
MEA901
90°
IC = 90 mA; VCE = 20 V; Tamb = 25 °C.
Fig.8 Common emitter reverse transmission coefficient (S12).
1
0.5
2
0.2
5
10
+ j
– j
0.2
0.5
1
2
5
10
0
∞
10
1000
500
200
100 MHz
5
0.2
2
0.5
MEA499
1
IC = 90 mA; VCE = 20 V; Tamb = 25 °C.
Zo = 50 Ω.
Fig.9 Common emitter output reflection coefficient (S22).
September 1995
7
Philips Semiconductors
Product specification
NPN 3.5 GHz wideband transistor
BFR94A
PACKAGE OUTLINE
Studded ceramic package; 4 leads
SOT122E
D
ceramic
BeO
A
metal
Q
c
N
1
A
D
1
N
2
w
1
D
M
A
2
M
W
N
N
3
M
1
X
H
detail X
b
2
b
α
4
L
3
H
1
b
1
2
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
N
1
UNIT
A
b
b
b
c
D
D
D
H
L
M
M
N
N
N
3
Q
W
w
1
α
1
2
1
2
1
2
max.
8-32
UNC
5.97 1.05 10.75 14.25 0.18 7.50 6.46 7.19 27.56 6.84 3.18 1.63 11.82
4.80 0.73 10.43 13.94 0.14 7.23 6.25 6.93 25.78 5.30 2.92 1.42 11.04
8.89 3.68 3.38
7.36 2.92 2.79
mm
90°
1.02
0.381
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-04-18
SOT122E
September 1995
8
Philips Semiconductors
Product specification
NPN 3.5 GHz wideband transistor
BFR94A
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1995
9
相关型号：
©2020 ICPDF网 联系我们和版权申明