BDP949H6327TR [INFINEON]
Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon,;
| 型号： | BDP949H6327TR |
| 厂家： | 
Infineon |
| 描述： | Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, |
| 文件： | 总8页 (文件大小：523K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BDP947_BDP949_BDP953
Silicon NPN Transistors
• For AF driver and output stages
• High collector current
4
3
2
1
• High current gain
• Low collector-emitter saturation voltage
• Complementary types: BDP948, BDP950,
BDP954 (PNP)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type
Marking
Pin Configuration
Package
SOT223
SOT223
SOT223
BDP947
BDP949
BDP953
BDP947 1=B 2=C 3=E
BDP949 1=B 2=C 3=E
BDP953 1=B 2=C 3=E
4=C
4=C
4=C
-
-
-
-
-
-
1
2011-10-05
BDP947_BDP949_BDP953
Maximum Ratings
Parameter
Symbol
Value
Unit
V
Collector-emitter voltage
BDP947
BDP949
V
V
V
CEO
CBO
EBO
45
60
100
BDP953
Collector-base voltage
BDP947
BDP949
45
60
120
BDP953
5
3
Emitter-base voltage
Collector current
A
I
C
5
Peak collector current, t ≤ 10 ms
I
p
CM
200
500
5
mA
W
Base current
Peak base current, t ≤ 10 ms
Total power dissipation-
I
B
I
BM
p
P
tot
T ≤ 100 °C
S
150
°C
Junction temperature
Storage temperature
T
j
T
-65 ... 150
Thermal Resistance
Parameter
Junction - soldering point
Symbol
Value
≤ 10
Unit
K/W
1)
R
thJS
2
2011-10-05
BDP947_BDP949_BDP953
Electrical Characteristics at T = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
V
Collector-emitter breakdown voltage
I = 10 mA, I = 0 , BDP947
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
45
60
100
-
-
-
-
-
-
C
B
I = 10 mA, I = 0 , BDP949
C
B
I = 10 mA, I = 0 , BDP953
C
B
Collector-base breakdown voltage
I = 100 µA, I = 0 , BDP947
45
60
120
-
-
-
-
-
-
C
E
I = 100 µA, I = 0 , BDP949
C
E
I = 0 , I = 100 µA, BDP953
C
E
Emitter-base breakdown voltage
I = 10 µA, I = 0
5
-
-
E
C
Collector-base cutoff current
I
µA
CBO
V
V
= 45 V, I = 0
-
-
-
-
-
-
0.1
20
100 nA
CB
CB
E
= 45 V, I = 0 , T = 150 °C
E
A
Emitter-base cutoff current
I
EBO
V
= 4 V, I = 0
EB
C
2)
-
DC current gain
h
FE
I = 10 mA, V = 5 V
25
100
50
-
-
-
-
-
C
CE
I = 500 mA, V = 1 V
475
-
-
C
CE
I = 2 A, V = 2 V, BDP947, BDP949
C
CE
I = 2 A, V = 2 V, BDP953
15
C
CE
2)
Collector-emitter saturation voltage
I = 2 A, I = 0.2 A
V
-
-
0.5
V
CEsat
C
B
2)
Base emitter saturation voltage
I = 2 A, I = 0.2 A
V
-
-
1.3
BEsat
C
B
AC Characteristics
Transition frequency
-
-
100
25
-
-
MHz
pF
f
T
I = 50 mA, V = 10 V, f = 100 MHz
C
CE
Collector-base capacitance
C
cb
V
= 10 V, f = 1 MHz
CB
1
For calculation of R
please refer to Application Note AN077 (Thermal Resistance Calculation)
thJA
2Pulse test: t < 300µs; D < 2%
3
2011-10-05
BDP947_BDP949_BDP953
DC current gain h = ƒ(I )
Collector-emitter saturation voltage
FE
C
V
= 2 V
I = ƒ(V
), h = 10
CE
C
CEsat FE
10 4
mA
10 3
-
100°C
10 3
10 2
10 1
25°C
-55°C
10 2
100°C
25°C
-50°C
10 1
10 0
10 0
10 0
0
10 1
10 2
10 3
10 4
0.1
0.2
0.3
0.4
0.6
V
CEsat
mA
C
V
I
Base-emitter saturation voltage
Collector current I = ƒ(V )
C
BE
I = (V
), h = 10
V = 2 V
C
BEsat
FE
CE
10 4
mA
10 4
mA
10 3
10 2
10 1
10 3
10 2
10 1
10 0
-50°C
25°C
-50°C
25°C
100°C
100°C
10 0
0
V
V
0.2
0.4
0.6
0.8
1
1.3
0
0.2
0.4
0.6
0.8
1
1.3
V
V
BE
BEsat
4
2011-10-05
BDP947_BDP949_BDP953
Collector cutoff current I
= ƒ(T )
Collector-base capacitance C = ƒ(V )
cb CB
CBO
A
V
= 45 V
Emitter-base capacitance C = ƒ(V )
CB
eb
EB
10 5
nA
500
pF
10 4
10 3
10 2
10 1
10 0
400
350
300
250
200
150
100
50
max
CEB
typ
CCB
22
10 -1
0
°C
V
0
20
40
60
80
100 120
150
0
4
8
12
16
T
V
(V
A
CB EB
Total power dissipation P = ƒ(T )
Permissible Pulse Load R
= ƒ(t )
thJS p
tot
S
10 2
5.5
W
4.5
4
10 1
10 0
10 -1
3.5
3
D = 0,5
0,2
2.5
2
0,1
0,05
0,02
0,01
0,005
0
1.5
1
0.5
0
0
15 30 45 60 75 90 105 120
150
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
°C
s
t
t
p
s
5
2011-10-05
BDP947_BDP949_BDP953
Permissible Pulse Load
P
/P
= ƒ(t )
totmax totDC
p
10 3
-
D = 0
0.005
0.01
0.02
0.05
0.1
10 2
10 1
10 0
0.2
0.5
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
t
p
6
2011-10-05
Package SOT223
BDP947_BDP949_BDP953
Package Outline
0.1
1.6
0.2
6.5
A
0.1
0.1 MAX.
3
B
4
3
1
2
2.3
0.1
0.7
0.28
0.0
4
4.6
0...10˚
M
0.25
A
M
0.25
B
Foot Print
3.5
1.2 1.1
Marking Layout (Example)
Manufacturer
2005, 24 CW
Date code (YYWW)
BCP52-16
Type code
Pin 1
Packing
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
0.3 MAX.
8
1.75
6.8
Pin 1
7
2011-10-05
BDP947_BDP949_BDP953
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
8
2011-10-05
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