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BDP950 [INFINEON]

PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain); PNP硅自动对焦功率晶体管（对于自动对焦驱动器和输出级高集电极电流高电流增益）
BDP950
型号： BDP950
厂家： Infineon    Infineon
描述：

PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain)
PNP硅自动对焦功率晶体管（对于自动对焦驱动器和输出级高集电极电流高电流增益）

晶体 驱动器 射频双极晶体管 光电二极管 放大器
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BDP 948  
PNP Silicon AF Power Transistor  
• For AF drivers and output stages  
• High collector current  
• High current gain  
• Low collector-emitter saturation voltage  
• Complementary type: BDP947, BDP949 (NPN)  
Type  
Marking Ordering Code  
BDP 948 Q62702-D1336  
BDP 950 Q62702-D1338  
Pin Configuration  
Package  
BDP 948  
BDP 950  
1 = B 2 = C 3 = E 4 = C SOT-223  
1 = B 2 = C 3 = E 4 = C SOT-223  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Collector-emitter voltage  
BDP 948  
V
V
V
V
CEO  
CBO  
EBO  
45  
60  
BDP 950  
Collector-base voltage  
BDP 948  
45  
BDP 950  
60  
Emitter-base voltage  
DC collector current  
Peak collector current  
Base current  
5
I
I
I
I
3
A
C
5
CM  
B
200  
mA  
Peak base current  
500  
BM  
Total power dissipation, T = 99°C  
P
3
W
S
tot  
j
Junction temperature  
Storage temperature  
T
T
150  
°C  
- 65 ... + 150  
stg  
Thermal Resistance  
1)  
≤
≤
Junction ambient  
R
R
42  
17  
K/W  
thJA  
Junction - soldering point  
thJS  
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu  
Semiconductor Group  
1
Nov-28-1996  
BDP 948  
Electrical Characteristics at T =25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
DC Characteristics  
Collector-emitter breakdown voltage  
V
V
(BR)CEO  
I = 10 mA, I = 0 mA, BDP 948  
45  
60  
-
-
-
-
C
B
I = 10 mA, I = 0 mA, BDP 950  
C
B
Collector-base breakdown voltage  
I = 100 µA, I = 0 , BDP 948  
V
(BR)CBO  
45  
60  
-
-
-
-
C
B
I = 100 µA, I = 0 , BDP 950  
C
B
Base-emitter breakdown voltage  
I = 10 µA, I = 0  
V
(BR)EBO  
5
-
-
E
C
Collector cutoff current  
I
I
CBO  
V
CB  
V
CB  
= 45 V, I = 0 , T = 25 °C  
-
-
-
-
100  
20  
nA  
µA  
nA  
E
A
= 45 V, I = 0 , T = 150 °C  
E
A
Emitter cutoff current  
= 4 V, I = 0  
EBO  
V
EB  
-
-
100  
C
DC current gain  
I = 10 mA, V = 5 V  
h
-
FE  
25  
85  
50  
-
-
-
-
C
CE  
I = 500 mA, V = 1 V  
475  
-
C
CE  
I = 1 A, V = 2 V  
C
CE  
Collector-emitter saturation voltage 1)  
I = 2 A, I = 0.2 A  
V
V
V
CEsat  
-
-
-
-
0.5  
1.3  
C
B
Base-emitter saturation voltage 1)  
I = 2 A, I = 0.2 A  
BEsat  
C
B
AC Characteristics  
Transition frequency  
f
MHz  
pF  
T
I = 50 mA, V = 10 V, f = 100 MHz  
-
-
100  
40  
-
-
C
CE  
Collector-base capacitance  
= 10 V, f = 1 MHz  
C
cb  
V
CB  
µ
1) Pulse test: t < 300 s; D < 2%  
Semiconductor Group  
2
Nov-28-1996  
BDP 948  
Total power dissipation P = f (T *;T )  
Permissible Pulse Load R  
= f(t )  
tot  
A
S
thJS  
p
* Package mounted on epoxy  
10 3  
K/W  
3.2  
W
TS  
TA  
10 2  
Ptot  
RthJS  
2.4  
2.0  
1.6  
1.2  
0.8  
10 1  
0.5  
10 0  
10 -1  
10 -2  
0.2  
0.1  
0.05  
0.02  
0.01  
0.005  
D = 0  
0.4  
0.0  
0
20  
40  
60  
80  
100 120 °C 150  
TA,TS  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 -1 s 10 0  
tp  
Permissible Pulse Load P  
/ P  
= f(t )DC current gain h = f (I )  
totmax  
totDC  
p
FE  
C
V
CE  
= 2V  
10 3  
10 3  
-
-
100°C  
25°C  
Ptotmax/PtotDC  
hFE  
D = 0  
0.005  
0.01  
0.02  
0.05  
0.1  
10 2  
10 1  
10 0  
10 2  
-50°C  
0.2  
0.5  
10 1  
10 0  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 -1 s 10 0  
tp  
10 1  
10 2  
10 3  
mA  
IC  
Semiconductor Group  
3
Nov-28-1996  
BDP 948  
Collector cutoff current I  
= f (T )  
Collector-emitter saturation voltage  
CBO  
A
V
CB  
= 45V  
I = f (V  
), h = 10  
C
CEsat  
FE  
10 4  
mA  
10 5  
nA  
10 4  
10 3  
10 2  
10 1  
10 0  
ICBO  
IC  
10 3  
100°C  
25°C  
max  
-50°C  
10 2  
10 1  
10 0  
typ  
10 -1  
0
20  
40  
60  
80  
100 120 °C 150  
TA  
0.0  
0.1  
0.2  
0.3  
V
0.5  
VCEsat  
Base-emitter saturation voltage  
Collector current I = f (V )  
C BE  
I = f (V  
), h = 10  
V = 2V  
CE  
C
BEsat  
FE  
10 4  
mA  
10 4  
mA  
IC  
IC  
10 3  
10 3  
10 2  
10 1  
-50°C  
25°C  
-50°C  
25°C  
100°C  
100°C  
10 2  
10 1  
10 0  
10 0  
0.0  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
V
1.3  
0.2  
0.4  
0.6  
0.8  
1.0  
V
VBE  
1.3  
VBEsat  
Semiconductor Group  
4
Nov-28-1996  

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