首页 |元器件品牌

BCR119L3 [INFINEON]

NPN silicon Digital Transistor; NPN硅晶体管数字
BCR119L3
型号： BCR119L3
厂家： Infineon    Infineon
描述：

NPN silicon Digital Transistor
NPN硅晶体管数字

晶体 小信号双极晶体管 开关
文件： 总10页 (文件大小：491K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
BCR119.../SEMH7  
NPN silicon Digital Transistor  
• Switching circuit, inverter, interface circuit,  
driver circuit  
• Built in resistor (R =4.7kΩ)  
1
• For 6-PIN packages: two (galvanic) internal  
isolated transistors with good matching  
in one package  
BCR119/F/L3  
BCR119T/W  
BCR119S  
SEMH7  
C1  
B2  
E2  
C
6
5
4
3
R1  
R1  
R1  
TR2  
TR1  
1
2
1
2
3
B
E
E1  
B1  
C2  
EHA07264  
EHA07265  
Type  
Marking  
Pin Configuration  
Package  
BCR119  
WKs  
WKs  
WK  
WKs  
WKs  
WKs  
WK  
1=B 2=E 3=C  
1=B 2=E 3=C  
1=B 2=E 3=C  
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363  
1=B 2=E 3=C  
1=B 2=E 3=C  
-
-
-
-
-
-
-
-
-
SOT23  
TSFP-3  
TSLP-3-4  
BCR119F  
BCR119L3  
BCR119S  
BCR119T  
BCR119W  
SEMH7  
-
-
-
-
-
-
SC75  
SOT323  
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666  
May-17-2004  
1
BCR119.../SEMH7  
Maximum Ratings  
Parameter  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Input on voltage  
Symbol  
Value  
50  
50  
Unit  
V
V
V
V
V
CEO  
CBO  
EBO  
i(on)  
5
15  
DC collector current  
Total power dissipation-  
I
P
100  
mA  
mW  
E
tot  
BCR119, T ≤ 102°C  
200  
250  
250  
250  
250  
250  
250  
S
BCR119F, T ≤ 128°C  
S
BCR119L3, T ≤ 135°C  
S
BCR119S, T ≤ 115°C  
S
BCR119T, T ≤ 109°C  
S
BCR119W, T ≤ 124°C  
S
SEMH7, T ≤ 75°C  
S
150  
°C  
Junction temperature  
Storage temperature  
T
j
T
-65 ... 150  
stg  
Thermal Resistance  
Parameter  
Junction - soldering point  
Symbol  
Value  
Unit  
K/W  
1)  
R
thJS  
BCR119  
≤ 240  
≤ 90  
≤ 60  
≤ 140  
≤ 165  
≤ 105  
≤ 300  
BCR119F  
BCR119L3  
BCR119S  
BCR119T  
BCR119W  
SEMH7  
1
For calculation of R  
thJA  
please refer to Application Note Thermal Resistance  
May-17-2004  
2
BCR119.../SEMH7  
Electrical Characteristics at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
typ. max.  
Unit  
min.  
DC Characteristics  
Collector-emitter breakdown voltage  
50  
-
-
-
-
V
V
V
V
(BR)CEO  
(BR)CBO  
(BR)EBO  
CBO  
I = 100 µA, I = 0  
C
B
Collector-base breakdown voltage  
I = 10 µA, I = 0  
50  
5
-
C
E
Emitter-base breakdown voltage  
I = 10 µA, I = 0  
-
E
C
Collector-base cutoff current  
I
-
-
100 nA  
V
= 40 V, I = 0  
CB  
E
1)  
120  
-
-
-
630  
0.3  
0.8  
1.1  
-
DC current gain  
h
FE  
I = 5 mA, V = 5 V  
Collector-emitter saturation voltage  
I = 10 mA, I = 0.5 mA  
C
CE  
1)  
V
V
V
V
CEsat  
i(off)  
C
B
Input off voltage  
I = 100 µA, V = 5 V  
0.4  
0.5  
3.2  
-
C
CE  
Input on voltage  
I = 2 mA, V = 0.3 V  
-
i(on)  
C
CE  
Input resistor  
R
4.7  
6.2 kΩ  
1
AC Characteristics  
Transition frequency  
-
-
150  
3
-
-
MHz  
pF  
f
T
I = 10 mA, V = 5 V, f = 100 MHz  
C
CE  
Collector-base capacitance  
= 10 V, f = 1 MHz  
C
cb  
V
CB  
1
Pulse test: t < 300µs; D < 2%  
May-17-2004  
3
BCR119.../SEMH7  
DC current gain h = ƒ(I )  
Collector-emitter saturation voltage  
FE  
C
V
= 5V (common emitter configuration)  
V
= ƒ(I ), h = 20  
CE  
CEsat C FE  
10 3  
-
10 2  
mA  
10 2  
10 1  
10 0  
10 1  
10 0  
10 -1  
10 -1  
10 -1  
10 0  
10 1  
10 2  
0
0.1  
0.2  
0.3  
0.5  
mA  
V
I
V
CEsat  
C
Input on Voltage Vi  
= ƒ(I )  
Input off voltage V  
= ƒ(I )  
i(off) C  
(on)  
C
V
= 0.3V (common emitter configuration)  
V
= 5V (common emitter configuration)  
CE  
CE  
10 2  
10 2  
mA  
mA  
10 1  
10 0  
10 1  
10 -1  
10 -2  
10 -3  
10 0  
10 -1  
10 -1  
10 0  
10 1  
10 2  
0
1
2
3
5
V
V
V
V
i(off)  
i(on)  
May-17-2004  
4
BCR119.../SEMH7  
Total power dissipation P = ƒ(T )  
Total power dissipation P = ƒ(T )  
tot S  
tot  
S
BCR119  
BCR119F  
300  
mW  
300  
mW  
200  
150  
100  
50  
200  
150  
100  
50  
0
0
0
0
°C  
°C  
20  
40  
60  
80  
100 120  
150  
20  
40  
60  
80  
100 120  
150  
T
T
S
S
Total power dissipation P = ƒ(T )  
Total power dissipation P = ƒ(T )  
tot S  
tot  
S
BCR119L3  
BCR119S  
300  
mW  
300  
mW  
200  
150  
100  
50  
200  
150  
100  
50  
0
0
0
0
°C  
°C  
20  
40  
60  
80  
100 120  
150  
20  
40  
60  
80  
100 120  
150  
T
T
S
S
May-17-2004  
5
BCR119.../SEMH7  
Total power dissipation P = ƒ(T )  
Total power dissipation P = ƒ(T )  
tot S  
tot  
S
BCR119T  
BCR119W  
300  
mW  
300  
mW  
200  
150  
100  
50  
200  
150  
100  
50  
0
0
0
0
°C  
°C  
20  
40  
60  
80  
100 120  
150  
20  
40  
60  
80  
100 120  
150  
T
T
S
S
Total power dissipation P = ƒ(T )  
tot  
S
SEMH7  
300  
mW  
200  
150  
100  
50  
0
0
°C  
20  
40  
60  
80  
100 120  
150  
T
S
May-17-2004  
6
BCR119.../SEMH7  
Permissible Pulse Load R  
BCR119  
= ƒ(t )  
Permissible Pulse Load  
P /P = ƒ(t )  
totmax totDC  
thJS  
p
p
BCR119  
10 3  
K/W  
10 3  
-
10 2  
D = 0  
0.005  
0.01  
0.02  
0.05  
0.1  
10 2  
10 1  
0.5  
0.2  
0.2  
0.5  
0.1  
10 1  
0.05  
0.02  
0.01  
0.005  
D = 0  
10 0  
10 -1  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
s
s
t
t
p
p
Permissible Puls Load R  
BCR119F  
= ƒ (t )  
Permissible Pulse Load  
P /P = ƒ(t )  
totmax totDC  
thJS  
p
p
BCR119F  
10 2  
K/W  
10 3  
D=0.5  
0.2  
10 1  
10 0  
10 -1  
10 2  
D=0  
0.005  
0.01  
0.02  
0.05  
0.1  
0.1  
0.05  
0.02  
0.01  
0.005  
0
0.2  
0.5  
10 1  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
s
s
t
t
p
p
May-17-2004  
7
BCR119.../SEMH7  
Permissible Puls Load R  
BCR119L3  
= ƒ (t )  
Permissible Pulse Load  
P /P = ƒ(t )  
totmax totDC  
thJS  
p
p
BCR119L3  
10 2  
10 1  
10 0  
10 -1  
10 3  
D = 0  
0.005  
0.01  
0.02  
0.05  
0.1  
10 2  
10 1  
10 0  
0.5  
0.2  
0.2  
0.1  
0.5  
0.05  
0.02  
0.01  
0.005  
D = 0  
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2  
10 0  
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2  
10 0  
s
s
t
t
p
p
Permissible Puls Load R  
BCR119S  
= ƒ (t )  
Permissible Pulse Load  
P /P = ƒ(t )  
totmax totDC  
thJS  
p
p
BCR119S  
10 3  
K/W  
10 3  
-
10 2  
10 1  
10 0  
10 -1  
D = 0  
0.005  
0.01  
0.02  
0.05  
0.1  
10 2  
0.5  
0.2  
0.2  
0.5  
0.1  
10 1  
0.05  
0.02  
0.01  
0.005  
D = 0  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
s
s
t
t
p
p
May-17-2004  
8
BCR119.../SEMH7  
Permissible Puls Load R  
BCR119T  
= ƒ (t )  
Permissible Pulse Load  
P /P = ƒ(t )  
totmax totDC  
thJS  
p
p
BCR119T  
10 3  
K/W  
10 3  
10 2  
D=0  
0.005  
0.01  
0.02  
0.05  
0.1  
10 2  
10 1  
D=0.5  
0.2  
0.2  
0.5  
0.1  
10 1  
0.05  
0.02  
0.01  
0.005  
0
10 0  
10 -1  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
s
s
t
t
p
p
Permissible Puls Load R  
BCR119W  
= ƒ (t )  
Permissible Pulse Load  
P /P = ƒ(t )  
totmax totDC  
thJS  
p
p
BCR119W  
10 3  
K/W  
10 3  
-
10 2  
10 1  
10 0  
10 -1  
D = 0  
10 2  
0.005  
0.01  
0.02  
0.05  
0.1  
0.5  
0.2  
0.2  
0.5  
0.1  
10 1  
0.05  
0.02  
0.01  
0.005  
D = 0  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
s
s
t
t
p
p
May-17-2004  
9
BCR119.../SEMH7  
Permissible Puls Load R  
SEMH7  
= ƒ (t )  
Permissible Pulse Load  
P /P = ƒ(t )  
totmax totDC  
thJS  
p
p
SEMH7  
10 3  
K/W  
10 3  
10 2  
10 1  
10 0  
10 -1  
10 2  
10 1  
10 0  
D = 0  
0.005  
0.01  
0.02  
0.05  
0.1  
0.5  
0.2  
0.1  
0.05  
0.02  
0.01  
0.005  
D = 0  
0.2  
0.5  
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2  
10 0  
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2  
10 0  
s
s
t
t
p
p
May-17-2004  
10  

相关型号：

BCR119S

 NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit)
INFINEON

BCR119S-E6327

 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
INFINEON

BCR119S-E6433

 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
INFINEON

BCR119SH6327XTSA1

 Small Signal Bipolar Transistor,
INFINEON

BCR119SQ62702C2415

 TRANSISTOR DIGITAL SOT363
INFINEON

BCR119T

 NPN silicon Digital Transistor
INFINEON

BCR119W

 NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
INFINEON

BCR119_07

 NPN silicon Digital Transistor
INFINEON

BCR12

 MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
MITSUBISHI

BCR129

 NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
INFINEON

BCR129E6327HTSA1

 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
INFINEON

BCR129F

 NPN Silicon Digital Transistor
INFINEON
©2020 ICPDF网 联系我们和版权申明