BCR119S [INFINEON]
NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit); NPN硅数字晶体管阵列（开关电路，逆变器，接口电路，驱动电路）
| 型号： | BCR119S |
| 厂家： | 
Infineon |
| 描述： | NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) |
| 文件： | 总4页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCR 119S
NPN Silicon Digital Transistor Array
• Switching circuit, inverter, interface circuit,
driver circuit
• Two (galvanic) internal isolated Transistors
in one package
Ω
• Built bias resistor (R =4.7k )
1
Type
Marking Ordering Code Pin Configuration
Package
BCR 119S WKs
Q62702-C2415 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
V
CEO
V
CBO
V
EBO
V
i(on)
50
V
50
5
15
DC collector current
I
100
mA
mW
°C
C
Total power dissipation, T = 115°C
P
250
S
tot
Junction temperature
Storage temperature
T
T
150
j
- 65 ... + 150
stg
Thermal Resistance
1)
≤
Junction ambient
R
R
275
K/W
thJA
Junction - soldering point
≤ 140
thJS
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Semiconductor Group
1
Dec-18-1996
BCR 119S
Electrical Characteristics at T =25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC Characteristics
Collector-emitter breakdown voltage
V
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CBO
I = 100 µA, I = 0
50
50
5
-
-
-
-
-
-
-
-
C
B
Collector-base breakdown voltage
I = 10 µA, I = 0
-
C
B
Base-emitter breakdown voltage
I = 10 µA, I = 0
-
E
C
Collector cutoff current
= 40 V, I = 0
I
nA
-
V
CB
-
100
630
0.3
0.8
E
DC current gain
I = 5 mA, V = 5 V
h
FE
120
-
C
CE
Collector-emitter saturation voltage 1)
I = 10 mA, I = 0.5 mA
V
V
V
V
CEsat
i(off)
C
B
Input off voltage
I = 100 µA, V = 5 V
0.4
C
CE
Input on Voltage
I = 2 mA, V = 0.3 V
i(on)
0.5
3.2
-
1.1
6.2
C
CE
Ω
k
Input resistor
R
4.7
1
AC Characteristics
Transition frequency
f
MHz
pF
T
I = 10 mA, V = 5 V, f = 100 MHz
-
-
150
3
-
-
C
CE
Collector-base capacitance
= 10 V, f = 1 MHz
C
cb
V
CB
µ
1) Pulse test: t < 300 s; D < 2%
Semiconductor Group
2
Dec-18-1996
BCR 119S
DC Current Gain h = f (I )
Collector-Emitter Saturation Voltage
V = f(I ), h = 20
CEsat
FE
C
V
CE
= 5V (common emitter configuration)
C
FE
10 3
10 2
-
mA
hFE
IC
10 2
10 1
10 0
10 -1
10 1
10 0
10 -1
10 -1
10 0
10 1
mA
IC
0.0
0.1
0.2
0.3
V
0.5
VCEsat
Input on Voltage V
= f(I )
Input off voltage V = f(I )
i(off) C
i(on)
C
V
CE
= 0.3V (common emitter configuration)
V
CE
= 5V (common emitter configuration)
10 2
mA
10 2
mA
10 1
IC
IC
10 1
10 0
10 -1
10 0
10 -1
10 -2
10 -3
10 -1
10 0
10 1
V
0
1
2
3
V
5
Vi(on)
Vi(off)
Semiconductor Group
3
Dec-18-1996
BCR 119S
Total power dissipation P = f (T *;T )
tot
A
S
* Package mounted on epoxy
300
mW
Ptot
TS
200
TA
150
100
50
0
0
20
40
60
80
100 120 °C 150
TA,TS
Permissible Pulse Load R
= f(t )
Permissible Pulse Load P
/ P = f(t )
totDC p
thJS
p
totmax
10 3
K/W
10 3
-
RthJS
10 2
Ptotmax/PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
10 2
10 1
10 0
10 1
0.2
0.5
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
10 0
10 -1
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
Semiconductor Group
4
Dec-18-1996
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