首页 |元器件品牌

BCP51M [INFINEON]

PNP Silicon AF Transistor (For AF driver and output stages High collector current); PNP硅晶体管自动对焦（ AF对于驱动和输出级高集电极电流）
BCP51M
型号： BCP51M
厂家： Infineon    Infineon
描述：

PNP Silicon AF Transistor (For AF driver and output stages High collector current)
PNP硅晶体管自动对焦（ AF对于驱动和输出级高集电极电流）

晶体 小信号双极晶体管 光电二极管 驱动 放大器
文件： 总4页 (文件大小：34K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
BCP 51M ... BCP 53M  
PNP Silicon AF Transistor  
4
• For AF driver and output stages  
5
• High collector current  
• Low collector-emitter saturation voltage  
• Complementary types: BCP 54M...BCP 56M(NPN)  
3
2
1
VPW05980  
Type  
Marking Ordering Code Pin Configuration  
Package  
BCP 51M AAs  
BCP 52M AEs  
BCP 53M AHs  
Q62702-C2592 1 = B 2 = C 3 = E 4 n.c. 5 = C SCT-595  
Q62702-C2593  
Q62702-C2594  
Maximum Ratings  
Parameter  
Symbol BCP 51M BCP 52M BCP 53M Unit  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
DC collector current  
Peak collector current  
Base current  
V
V
V
45  
45  
5
60  
60  
80  
100  
5
V
CEO  
CBO  
EBO  
5
I
I
I
I
1
mA  
A
C
1.5  
CM  
B
100  
200  
1.7  
mA  
Peak base current  
BM  
P
W
Total power dissipation, T ≤ 77 °C  
tot  
j
S
Junction temperature  
Storage temperature  
T
T
150  
-65...+150  
°C  
stg  
Thermal Resistance  
1)  
Junction ambient  
R
R
K/W  
≤98  
≤43  
thJA  
thJS  
Junction - soldering point  
2
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm Cu  
Semiconductor Group  
1
Au -11-1998  
1998-11-01  
Semiconductor Group  
1
BCP 51M ... BCP 53M  
Electrical Characteristics at T = 25°C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
Unit  
min.  
typ. max.  
DC Characteristics  
Collector-emitter breakdown voltage  
I = 10 mA, I = 0  
V
V
V
V
(BR)CEO  
(BR)CBO  
BCP 51M  
BCP 52M  
BCP 53M  
45  
60  
80  
-
-
-
-
C
B
-
-
Collector-base breakdown voltage  
I = 100 µA, I = 0  
BCP 51M  
BCP 52M  
BCP 53M  
45  
60  
-
-
-
-
C
B
100  
-
-
Emitter-base breakdown voltage  
I = 10 µA, I = 0  
5
-
-
-
-
-
-
-
-
-
(BR)EBO  
E
C
Collector cutoff current  
= 30 V, I = 0  
I
I
-
100 nA  
CBO  
V
CB  
E
Collector cutoff current  
= 30 V, I = 0 , T = 150 °C  
-
20  
-
µA  
-
CBO  
V
CB  
E
A
DC current gain 1)  
I = 5 mA, V = 2 V  
h
h
h
25  
40  
25  
-
FE  
FE  
FE  
C
CE  
DC current gain 1)  
I = 150 mA, V = 2 V  
250  
-
C
CE  
DC current gain 1)  
I = 500 mA, V = 2 V  
C
CE  
Collector-emitter saturation voltage1)  
I = 500 mA, I = 50 mA  
V
V
0.5  
1
V
CEsat  
C
B
Base-emitter voltage 1)  
I = 500 mA, V = 2 V  
-
BE(ON)  
C
CE  
AC Characteristics  
Transition frequency  
f
-
100  
-
MHz  
T
I = 50 mA, V = 10 V, f = 100 MHz  
C
CE  
1) Pulse test: t ≤ 300µs, D = 2%  
Semiconductor Group  
Semiconductor Group  
2
Au -11-1998  
1998-11-01  
2
BCP 51M ... BCP 53M  
Total power dissipation P = f (T *;T )  
DC current gain h = f (I )  
tot  
A
S
FE  
C
* Package mounted on epoxy  
V
= 2V  
CE  
BCP 51...53  
EHP00261  
2000  
103  
5
mW  
h FE  
1600  
100  
25  
C
C
T
S
1400  
1200  
1000  
800  
600  
400  
200  
0
102  
5
-50  
C
P
T
A
101  
5
100  
100  
101  
102  
103 mA 104  
°C  
0
20  
40  
60  
80  
100 120  
150  
T ,T  
A
S
Ι C  
Permissible Pulse Load R  
= f (t )  
Permissible Pulse Load  
thJS  
p
P
/ P  
= f (t )  
totmax  
totDC  
p
10 2  
10 3  
K/W  
-
/P  
10 1  
10 2  
10 1  
10 0  
D = 0  
0.005  
0.01  
0.02  
0.05  
0.1  
R
P
0.5  
0.2  
0.1  
0.05  
0.02  
0.01  
0.005  
D = 0  
0.2  
0.5  
10 0  
10 -1  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
s
s
T
S
t
p
Semiconductor Group  
Semiconductor Group  
3
Au -11-1998  
1998-11-01  
3
BCP 51M ... BCP 53M  
Collector cutoff current I  
= f (T )  
A
Transition frequency f = f (I )  
CBO  
T
C
V
= 30V  
V
= 10 V  
CB  
CE  
BCP 51...53  
EHP00260  
BCP 51...53  
EHP00262  
103  
MHz  
5
104  
nA  
f T  
Ι CBO  
max  
103  
102  
101  
102  
5
typ  
100  
101  
10-1  
100  
101  
102  
mA 103  
0
50  
100  
C
150  
Ι C  
TA  
Base-emitter saturation voltage  
Collector-emitter saturation voltage  
I = f (V  
), h = 10  
I = f (V  
), h = 10  
CEsat FE  
C
BEsat  
FE  
C
BCP 51...53  
EHP00264  
BCP 51...53  
EHP00263  
104  
104  
Ι C mA  
Ι C  
mA  
103  
103  
5
100  
25  
-50  
C
C
C
100  
25  
-50  
C
C
C
102  
5
102  
101  
100  
101  
5
100  
0
0.2  
0.4  
0.6  
0.8  
V
1.2  
0
0.2  
0.4  
0.6  
V
0.8  
VBEsat  
VCEsat  
Semiconductor Group  
Semiconductor Group  
4
Au -11-1998  
1998-11-01  
4

相关型号：

BCP51MBCP53M

 PNP Silicon AF Transistor (For AF driver and output stages High collector current)
INFINEON

BCP51T

 45 V, 1 A PNP medium power transistorsProduction
NEXPERIA

BCP51T/R

 TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 1A I(C) | SOT-223
ETC

BCP51TA

 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223
DIODES

BCP51TA

 Small Signal Bipolar Transistor, 1-Element, Silicon
ZETEX

BCP51TC

 Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
DIODES

BCP51TRL

 Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
YAGEO

BCP51TRL13

 Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
YAGEO

BCP51_07

 Surface Mount General Purpose Si-Epi-Planar Transistors
DIOTEC

BCP51_08

 PNP Silicon AF Transistors
INFINEON

BCP52

 MEDIUM POWER AMPLIFIER
STMICROELECTR

BCP52

 PNP General Purpose Amplifier
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明