BCP51MBCP53M [INFINEON]
PNP Silicon AF Transistor (For AF driver and output stages High collector current); PNP硅晶体管自动对焦( AF对于驱动和输出级高集电极电流)型号: | BCP51MBCP53M |
厂家: | Infineon |
描述: | PNP Silicon AF Transistor (For AF driver and output stages High collector current) |
文件: | 总4页 (文件大小:34K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BCP 51M ... BCP 53M
PNP Silicon AF Transistor
4
• For AF driver and output stages
5
• High collector current
• Low collector-emitter saturation voltage
• Complementary types: BCP 54M...BCP 56M(NPN)
3
2
1
VPW05980
Type
Marking Ordering Code Pin Configuration
Package
BCP 51M AAs
BCP 52M AEs
BCP 53M AHs
Q62702-C2592 1 = B 2 = C 3 = E 4 n.c. 5 = C SCT-595
Q62702-C2593
Q62702-C2594
Maximum Ratings
Parameter
Symbol BCP 51M BCP 52M BCP 53M Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
V
V
V
45
45
5
60
60
80
100
5
V
CEO
CBO
EBO
5
I
I
I
I
1
mA
A
C
1.5
CM
B
100
200
1.7
mA
Peak base current
BM
P
W
Total power dissipation, T ≤ 77 °C
tot
j
S
Junction temperature
Storage temperature
T
T
150
-65...+150
°C
stg
Thermal Resistance
1)
Junction ambient
R
R
K/W
≤98
≤43
thJA
thJS
Junction - soldering point
2
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm Cu
Semiconductor Group
1
Au -11-1998
1998-11-01
Semiconductor Group
1
BCP 51M ... BCP 53M
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I = 10 mA, I = 0
V
V
V
V
(BR)CEO
(BR)CBO
BCP 51M
BCP 52M
BCP 53M
45
60
80
-
-
-
-
C
B
-
-
Collector-base breakdown voltage
I = 100 µA, I = 0
BCP 51M
BCP 52M
BCP 53M
45
60
-
-
-
-
C
B
100
-
-
Emitter-base breakdown voltage
I = 10 µA, I = 0
5
-
-
-
-
-
-
-
-
-
(BR)EBO
E
C
Collector cutoff current
= 30 V, I = 0
I
I
-
100 nA
CBO
V
CB
E
Collector cutoff current
= 30 V, I = 0 , T = 150 °C
-
20
-
µA
-
CBO
V
CB
E
A
DC current gain 1)
I = 5 mA, V = 2 V
h
h
h
25
40
25
-
FE
FE
FE
C
CE
DC current gain 1)
I = 150 mA, V = 2 V
250
-
C
CE
DC current gain 1)
I = 500 mA, V = 2 V
C
CE
Collector-emitter saturation voltage1)
I = 500 mA, I = 50 mA
V
V
0.5
1
V
CEsat
C
B
Base-emitter voltage 1)
I = 500 mA, V = 2 V
-
BE(ON)
C
CE
AC Characteristics
Transition frequency
f
-
100
-
MHz
T
I = 50 mA, V = 10 V, f = 100 MHz
C
CE
1) Pulse test: t ≤ 300µs, D = 2%
Semiconductor Group
Semiconductor Group
2
Au -11-1998
1998-11-01
2
BCP 51M ... BCP 53M
Total power dissipation P = f (T *;T )
DC current gain h = f (I )
tot
A
S
FE
C
* Package mounted on epoxy
V
= 2V
CE
BCP 51...53
EHP00261
2000
103
5
mW
h FE
1600
100
25
C
C
T
S
1400
1200
1000
800
600
400
200
0
102
5
-50
C
P
T
A
101
5
100
100
101
102
103 mA 104
°C
0
20
40
60
80
100 120
150
T ,T
A
S
Ι C
Permissible Pulse Load R
= f (t )
Permissible Pulse Load
thJS
p
P
/ P
= f (t )
totmax
totDC
p
10 2
10 3
K/W
-
/P
10 1
10 2
10 1
10 0
D = 0
0.005
0.01
0.02
0.05
0.1
R
P
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
0.2
0.5
10 0
10 -1
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
T
S
t
p
Semiconductor Group
Semiconductor Group
3
Au -11-1998
1998-11-01
3
BCP 51M ... BCP 53M
Collector cutoff current I
= f (T )
A
Transition frequency f = f (I )
CBO
T
C
V
= 30V
V
= 10 V
CB
CE
BCP 51...53
EHP00260
BCP 51...53
EHP00262
103
MHz
5
104
nA
f T
Ι CBO
max
103
102
101
102
5
typ
100
101
10-1
100
101
102
mA 103
0
50
100
C
150
Ι C
TA
Base-emitter saturation voltage
Collector-emitter saturation voltage
I = f (V
), h = 10
I = f (V
), h = 10
CEsat FE
C
BEsat
FE
C
BCP 51...53
EHP00264
BCP 51...53
EHP00263
104
104
Ι C mA
Ι C
mA
103
103
5
100
25
-50
C
C
C
100
25
-50
C
C
C
102
5
102
101
100
101
5
100
0
0.2
0.4
0.6
0.8
V
1.2
0
0.2
0.4
0.6
V
0.8
VBEsat
VCEsat
Semiconductor Group
Semiconductor Group
4
Au -11-1998
1998-11-01
4
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