BCP52 [DIOTEC]
Surface mount Si-Epitaxial PlanarTransistors; 表面贴装硅外延PlanarTransistors
| 型号： | BCP52 |
| 厂家： | 
DIOTEC SEMICONDUCTOR |
| 描述： | Surface mount Si-Epitaxial PlanarTransistors |
| 文件： | 总2页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCP 51, BCP 52, BCP 53
General Purpose Transistors
PNP
Surface mount Si-Epitaxial PlanarTransistors
PNP
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
6.5±0.2
3±0.1
Power dissipation – Verlustleistung
1.3 W
1.65
Plastic case
SOT-223
4
Kunststoffgehäuse
Weight approx. – Gewicht ca.
0.04 g
3
1
2
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
0.7
2.3
3.25
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Dimensions / Maße in mm
1 = B 2, 4 = C 3 = E
Maximum ratings (TA = 25ꢀC)
Grenzwerte (TA = 25ꢀC)
BCP 51
45 V
45 V
BCP 52
60 V
60 V
BCP 53
80 V
100 V
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
B open
E open
C open
- VCE0
- VCB0
- VEB0
Ptot
- IC
- ICM
- IBM
5 V
Power dissipation – Verlustleistung
1.3 W 1)
1 A
Collector current – Kollektorstrom (DC)
Peak Collector current – Koll.-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
1.5 A
200 mA
150ꢀC
Junction temperature – Sperrschichttemperatur Tj
Storage temperature – Lagerungstemperatur
TS
- 65…+ 150ꢀC
Characteristics (Tj = 25ꢀC)
Kennwerte (Tj = 25ꢀC)
Min.
Typ.
Max.
Collector-Base cutoff current – Kollektorreststrom
IE = 0, - VCB = 30 V
- ICB0
- ICB0
–
–
–
–
100 nA
10 ꢀA
IE = 0, - VCB = 30 V, Tj = 125ꢀC
Emitter-Base cutoff current – Emitterreststrom
IC = 0, - VEB = 5 V
- IEB0
–
–
–
–
100 nA
500 mV
Collector saturation volt. – Kollektor-Sättigungsspg. 2)
- IC = 500 mA, - IB = 50 mA
- VCEsat
1
2
)
)
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
Tested with pulses tp = 300 ꢀs, duty cycle ꢀ 2% – Gemessen mit Impulsen tp = 300 ꢀs, Schaltverhältnis ꢀ 2%
24
01.11.2003
General Purpose Transistors
BCP 51, BCP 52, BCP53
Characteristics (Tj = 25ꢀC)
Kennwerte (Tj = 25ꢀC)
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis 1)
BCP 5x-6
BCP 5x-10
BCP 5x-16
hFE
hFE
hFE
hFE
hFE
40
63
100
63
–
–
–
–
–
100
160
250
–
- VCE = 2 V, - IC = 150 mA
- VCE = 2 V, - IC = 5 mA
- VCE = 2 V, - IC = 500 mA
BCP 51...
BCP53
40
–
Base-Emitter voltage – Basis-Emitter-Spannung 1)
- VCE = 2 V, - IC = 500 mA
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 100 MHz
Thermal resistance – Wärmewiderstand
- VBEon
fT
–
–
–
1 V
–
115 MHz
junction to ambient air – Sperrschicht zu umgebender Luft
junction to soldering point – Sperrschicht zu Lötpad
RthA
RthS
95 K/W 2)
14 K/W
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
BCP 54, BCP 55, BCP 56
1
2
)
)
Tested with pulses tp = 300 ꢀs, duty cycle ꢀ 2% – Gemessen mit Impulsen tp = 300 ꢀs, Schaltverhältnis ꢀ 2%
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
25
01.11.2003
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