BC338-25 [INFINEON]
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage); NPN硅晶体管自动对焦（高电流增益高集电极电流低集电极 - 发射极饱和电压）
| 型号： | BC338-25 |
| 厂家： | 
Infineon |
| 描述： | NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
| 文件： | 总6页 (文件大小：153K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN Silicon AF Transistors
BC 337
BC 338
● High current gain
● High collector current
● Low collector-emitter saturation voltage
● Complementary types: BC 327, BC 328 (PNP)
2
3
1
Package1)
Type
Marking
Ordering Code
Pin Configuration
1
2
3
BC 337
–
Q62702-C313
C
B
E
TO-92
BC 337-16
BC 337-25
BC 337-40
BC 338
Q62702-C313-V3
Q62702-C313-V1
Q62702-C313-V2
Q62702-C314
BC 338-16
BC 338-25
BC 338-40
Q62702-C314-V1
Q62702-C314-V2
Q62702-C314-V3
1)
For detailed information see chapter Package Outlines.
5.91
1
BC 337
BC 338
Maximum Ratings
Parameter
Symbol
Values
BC 337
BC 338
25
Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
V
V
CE0
CB0
EB0
45
50
V
30
5
I
I
I
I
C
800
1
mA
A
Peak collector current
Base current
CM
B
100
200
625
150
mA
Peak base current
BM
Total power dissipation, T
C
= 66 ˚C
Ptot
mW
˚C
Junction temperature
Tj
Storage temperature range
Tstg
– 65 … + 150
Thermal Resistance
Junction - ambient
Junction - case1)
R
th JA
th JC
≤ 200
≤ 135
K/W
R
1)
Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Semiconductor Group
2
BC 337
BC 338
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter breakdown voltage
IC = 10 mA
V(BR)CE0
V(BR)CB0
V(BR)EB0
V
BC 337
BC 338
45
25
–
–
–
–
Collector-base breakdown voltage
= 100 µA
IC
BC 337
BC 338
50
30
–
–
–
–
Emitter-base breakdown voltage
= 10 µA
5
–
–
IE
Collector cutoff current
ICB0
V
V
V
V
CB = 25 V
CB = 45 V
CB = 25 V, T
CB = 45 V, T
BC 338
BC 337
BC 338
BC 337
–
–
–
–
–
–
–
–
100
100
10
nA
nA
µA
µA
A
A
= 150 ˚C
= 150 ˚C
10
Emitter cutoff current
IEB0
–
–
100
nA
VEB = 4 V
DC current gain1)
h
FE
–
IC
= 100 mA; VCE = 1 V
100
160
250
160
250
350
250
400
630
BC 337/16; BC 338/16
BC 337/25; BC 338/25
BC 337/40; BC 338/40
IC
= 300 mA; VCE = 1 V
60
100
170
–
–
–
–
–
–
BC 337/16; BC 338/16
BC 337/25; BC 338/25
BC 337/40; BC 338/40
Collector-emitter saturation voltage1)
= 500 mA; I = 50 mA
V
CEsat
BEsat
–
–
0.7
V
IC
B
Base-emitter saturation voltage
= 500 mA; I = 50 mA
V
–
–
2
IC
B
1)
Pulse test: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group
3
BC 337
BC 338
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
AC characteristics
Transition frequency
f
T
–
–
–
170
8
–
–
–
MHz
pF
I
C
= 50 mA, VCE = 5 V, f = 20 MHz
Output capacitance
CB = 10 V, f = 1 MHz
Input capacitance
EB = 0.5 V, f = 1 MHz
C
obo
ibo
V
C
60
V
Semiconductor Group
4
BC 337
BC 338
Total power dissipation Ptot = f (T
A
; TC)
Permissible pulse load RthJA = f (t )
p
Collector current I
C
= f (VBE
)
Collector cutoff current ICB0 = f (T )
A
V
CE = 1 V
VCB = 45 V
Semiconductor Group
5
BC 337
BC 338
DC current gain hFE = f (I
C
)
Transition frequency f
T
= f (I )
C
V
CE = 1 V
f = 20 MHz, T =25 ˚C
A
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CEsat = f (I
C
)
V
BEsat = f (I
C)
h
FE = 10
hFE = 10
Semiconductor Group
6
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