BC338-25BK [DIOTEC]
Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3;
| 型号： | BC338-25BK |
| 厂家： | 
DIOTEC SEMICONDUCTOR |
| 描述： | Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3 晶体管 |
| 文件： | 总2页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC337-xBK / BC338-xBK
BC337-xBK / BC338-xBK
General Purpose Si-Epitaxial Planar Transistors
Si-Epitaxial Planar-Transistoren für universellen Einsatz
NPN
NPN
Version 2010-05-27
4.6±0.1
Power dissipation
Verlustleistung
625 mW
Plastic case
TO-92
Kunststoffgehäuse
(10D3)
Weight approx. – Gewicht ca.
0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
C
B E
Special packaging bulk
Sonder-Lieferform Schüttgut
2 x 1.27
Dimensions - Maße [mm]
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
BC337
BC338
30 V
Collector-Emitter-volt. – Kollektor-Emitter-Spannung E-B short
Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open
VCES
VCEO
VEBO
Ptot
IC
50 V
45 V
25 V
Emitter-Base-voltage – Emitter-Basis-Spannung
Power dissipation – Verlustleistung
C open
5 V
625 mW 1)
800 mA
1 A
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Base current – Basisstrom
ICM
IB
100 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis 2)
VCE = 1 V, IC = 100 mA
Group -16
Group -25
Group -40
hFE
hFE
hFE
100
160
250
160
250
400
250
400
630
VCE = 1 V, IC = 300 mA
Group -16
Group -25
Group -40
hFE
hFE
hFE
60
100
170
130
200
320
–
–
–
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)
IC = 500 mA, IB = 50 mA
VCEsat
–
–
0.7 V
1
2
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
BC337-xBK / BC338-xBK
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
Base-Emitter-voltage – Basis-Emitter-Spannung 2)
VCE = 1 V, IC = 300 mA,
VBE
–
–
1.2 V
Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom
VCE = 45 V, (B-E short)
VCE = 25 V, (B-E short)
BC337
BC338
ICES
ICES
–
–
2 nA
2 nA
100 nA
100 nA
VCE = 45 V, Tj = 125°C, (B-E short)
VCE = 25 V, Tj = 125°C, (B-E short)
BC337
BC338
ICES
ICES
–
–
–
–
10 µA
10 µA
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 50 MHz
fT
–
–
100 MHz
–
–
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE =ie = 0, f = 1 MHz
CCBO
RthA
12 pF
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
< 200 K/W 1)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BC327 / BC328
Available current gain groups per type
Lieferbare Stromverstärkungsgruppen pro Typ
BC337-16
BC337-25
BC337-40
BC338-16
BC338-25
BC338-40
120
[%]
100
80
60
40
20
Ptot
0
0
TA
100
150
50
[°C]
Power dissipation versus ambient temperature 1)
Verlustleistung in Abh. von d. Umgebungstemp.1)
2
1
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2
http://www.diotec.com/
© Diotec Semiconductor AG
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