BAW222 [INFINEON]
Variable Capacitance Diode, 0.5pF C(T), 85V, Silicon, ROHS COMPLIANT, SC-75, 3 PIN;
| 型号： | BAW222 |
| 厂家： | 
Infineon |
| 描述： | Variable Capacitance Diode, 0.5pF C(T), 85V, Silicon, ROHS COMPLIANT, SC-75, 3 PIN 光电二极管 |
| 文件： | 总4页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAV222 / BAW222
Silicon Switching Diode
• For high-speed switching applications (trr < 4ns)
• Very low diode capacitance (C < 1.5pF)
T
• Small SMD package SC75 (JEDEC: SOT416)
BAV222
BAW222
3
3
D
2
D
2
D
1
D
1
1
2
1
2
Type
BAV222*
BAW222*
Package
SC75
SC75
Configuration
common cathode
common anode
Marking
A4s
A1s
* Preliminary
Maximum Ratings at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Value
80
85
200
300
4.5
Unit
V
Diode reverse voltage
Peak reverse voltage
Forward current
Peak forward current
Surge forward current, t = 1µs
Mean rectifying current
Total power dissipation
V
V
R
RM
mA
I
F
I
FM
A
mA
mW
I
FS
I
100
O
P
tot
BAV222, T ≤ 73°C
250
250
S
BAW222, T ≤ tbd
S
150
°C
Junction temperature
Storage temperature
T
j
T
stg
-65 ... 150
Oct-07-2003
1
BAV222 / BAW222
Thermal Resistance
Parameter
Junction - soldering point
BAV222
Symbol
Value
Unit
K/W
1)
R
thJS
≤ 310
≤ tbd
BAW222
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
85
-
-
V
Breakdown voltage
V
(BR)
I
= 100 µA
(BR)
Reverse current
V = 70 V
I
µA
R
-
-
-
-
-
-
0.1
30
50
R
V = 25 V, T = 150 °C
R
A
V = 70 V, T = 150 °C
R
A
mV
Forward voltage
I = 1 mA
V
F
-
-
-
-
-
-
-
-
-
-
715
855
1000
1200
1250
F
I = 10 mA
F
I = 50 mA
F
I = 100 mA
F
I = 150 mA
F
AC Characteristics
Diode capacitance
-
-
-
1.5 pF
C
T
V = 6 V, f = 1 MHz
R
Reverse recovery time
t
-
4
ns
rr
I = 5 mA, V = 6 V, measured at 0.1 I ,
F
R
R
R = 100 Ω
L
Test circuit for reverse recovery time
D.U.T.
Pulse generator: t = 100ns, D = 0.05, t = 0.6ns,
p
r
R = 50Ω
i
Oscillograph
ΙF
Oscillograph: R = 50 , t = 0.35ns, C = 0.05pf
r
EHN00019
1For calculation of RthJA please refer to Application Note Thermal Resistance
Oct-07-2003
2
BAV222 / BAW222
Diode capacitance C = ƒ (V )
Reverse current I = ƒ(V )
T
R
R
R
f = 1MHz
T = Parameter
A
10 -4
A
1
pF
10 -5
10 -6
150 °C
85 °C
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10 -7
10 -8
25 °C
10 -9
10 -10
10 -11
10 -12
-40 °C
40
0
0
V
V
2
4
6
8
10 12 14 16
20
0
10
20
30
50
60
80
V
V
R
R
Forward current I = ƒ (V )
F
F
T = Parameter
A
10 0
A
10 -1
10 -2
10 -3
150 °C
85 °C
25 °C
-40 °C
V
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.2
V
F
Oct-07-2003
3
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München
© Infineon Technologies AG 2004.
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