BA592 [INFINEON]
Silicon RF Switching Diode; 硅射频开关二极管
| 型号： | BA592 |
| 厂家： | 
Infineon |
| 描述： | Silicon RF Switching Diode |
| 文件： | 总2页 (文件大小：33K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BA 592
BA 592
Silicon RF Switching Diode
Preliminary Data
● For VHF band switching
in TV/VTR tuners
● Low forward resistance,
small capacitance,
small inductance
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
Package
SOD-323
BA 592
blue S
Q62702-A950
Maximum Ratings
Parameter
Symbol
Values
35
Unit
Reverse voltage
V
R
V
Forward current
IF
100
mA
Operating temperature range
Storage temperature range
T
op
– 55 … + 125 ˚C
Tstg
– 55 … + 150
Thermal Resistance
Junction - ambient
R
th JA
≤ 450
K/W
10.94
Semiconductor Group
1
BA 592
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
Forward voltage
VF
–
–
1
V
I
F
= 100 mA
Reverse current
= 20 V
I
R
–
–
20
nA
pF
V
R
Diode capacitance
f = 1 MHz
C
T
V
R
= 1 V
= 3 V
–
0.6
0.92
0.85
1.4
1.1
V
R
Forward resistance
rf
Ω
f = 100 MHz
I
F
= 3 mA
= 10 mA
–
–
0.45
0.36
0.7
0.5
IF
Reverse resistance
= 1 V, f = 100 MHz
1/gp
–
100
–
KΩ
V
R
Series inductance
LS
–
2
–
nH
Diode capacitance C
T
= f (V
R)
Forward resistance r
f
= f (I )
F
f = 1 MHz
f = 100 MHz
Semiconductor Group
2
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