BA592E6433XT [INFINEON]
Mixer Diode,;
Infineon 
BA592/BA892...
Silicon RF Switching Diode
• For band switching in TV/VTR tuners
and mobile applications
• Very low forward resistance (typ. 0.45 Ω @ 3 mA)
• Small capacitance
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BA592
BA892/-02L
BA892-02V
1
2
Type
BA592
BA892
BA892-02L
BA892-02V
Package
SOD323
SCD80
TSLP-2-1
SC79
Configuration
single
single
single, leadless
single
L (nH) Marking
S
1.8
0.6
0.4
0.6
blue S
AA
AA
A
Maximum Ratings at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Value
Unit
35
100
150
V
mA
°C
Diode reverse voltage
Forward current
Junction temperature
Operating temperature range
Storage temperature
V
R
I
F
T
T
T
J
-55 ... 125
-55 ... 150
op
2011-07-21
1
BA592/BA892...
Thermal Resistance
Parameter
Junction - soldering point
BA592
BA892, BA892-02V
BA892-02L
Symbol
R
thJS
Value
Unit
K/W
1)
≤ 135
≤ 120
≤ 70
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
-
-
-
-
20
1
Reverse current
I
nA
V
R
V = 20 V
R
Forward voltage
V
F
I = 100 mA
F
1
For calculation of R
please refer to Application Note Thermal Resistance
thJA
2011-07-21
2
BA592/BA892...
Electrical Characteristics at T = 25°C, unless otherwise specified
Parameter
Symbol
Values
typ. max.
Unit
min.
AC Characteristics
pF
Diode capacitance
C
T
V = 1 V, f = 1 MHz
0.65
0.6
-
0.92
0.85
1
1.4
1.1
-
R
V = 3 V, f = 1 MHz
R
V = 0 V, f = 100 MHz
R
Reverse parallel resistance
R
-
100
-
kΩ
P
V = 0 V, f = 100 MHz
R
Forward resistance
r
Ω
f
I = 3 mA, f = 100 MHz
-
-
-
0.45
0.36
120
0.7
0.5
-
F
I = 10 mA, f = 100 MHz
F
ns
Charge carrier life time
τ
rr
I = 10 mA, I = 6 mA, measured at I = 3mA,
F
R
R
R = 100 Ω
L
I-region width
W
I
L
-
3
-
µm
dB
I
1)
Insertion loss
I = 0.1 mA, f = 1.8 GHz
-
-
-
0.1
0.5
0.4
-
-
-
F
I = 3 mA, f = 1.8 GHz
F
I = 10 mA, f = 1.8 GHz
F
1)
Isolation
I
SO
V = 0 V, f = 100 MHz
-
-
-
23.5
10.5
5.5
-
-
-
R
V = 0 V, f = 470 MHz
R
V = 0 V, f = 1 GHz
R
1
BA892-02L in series configuration, Z = 50Ω
2011-07-21
3
BA592/BA892...
Diode capacitance C = ƒ (V )
Reverse parallel resistance R = ƒ(V )
P R
T
R
f = Parameter
f = Parameter
10 3
2
KOhm
100 MHz
pF
10 2
10 1
10 0
10 -1
1.2
0.8
0.4
0
1 GHz
1 MHz ... 1 GHz
V
V
0
5
10
15
20
30
0
5
10
15
20
30
V
VR
R
Forward resistance r = ƒ (I )
Forward current I = ƒ (V )
f
F
F
F
f = 100MHz
T = Parameter
A
10 2
10 0
A
Ohm
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
10 1
-40 °C
25 °C
85 °C
125 °C
10 0
10 -1
10 -2
10 -1
10 0
10 1
10 2
0
0.2
0.4
0.6
0.8
1.2
mA
V
I
V
F
F
2011-07-21
4
BA592/BA892...
2
2
Insertion loss I = -|S | = ƒ(f)
Isolation I = -|S | = ƒ(f)
SO 21
L
21
I = Parameter
V = Paramter
F
R
BA892-02L in series configuration, Z = 50Ω
BA892-02L in series configuration, Z = 50Ω
0
0
dB
dB
-10
0 V
1 V
10 V
10 mA
3 mA
-0.2
-0.3
-0.4
-15
-20
-25
-30
1 mA
0.1 mA
GHz
GHz
0
0.5
1
1.5
2
3
0
0.5
1
1.5
2
3
f
f
2011-07-21
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Package SC79
BA592/BA892...
2011-07-21
6
Package SCD80
BA592/BA892...
Package Outline
M
±02
A
±±0.
±0.3+±0±ꢀ
±08
-±0±3
A
2
.
±03
Cathode
marking
±±0±ꢀ
±±0.
±07
Foot Print
±03ꢀ
Marking Layout (Example)
2±±ꢀ, June
Date code
BAR63-±2W
Type code
Cathode marking
Laser marking
Standard Packing
Reel ø.8± mm = 30±±± Pieces/Reel
Reel ø.8± mm = 80±±± Pieces/Reel (2 mm Pitch)
Reel ø33± mm = .±0±±± Pieces/Reel
Standard
4
Reel with 2 mm Pitch
2
±02
±07
Cathode
marking
±04
±09
Cathode
marking
2011-07-21
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BA592/BA892...
Date Code marking for discrete packages with
one digit (SCD80, SC79, SC751)) CES-Code
Month 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014
01
02
03
04
05
06
07
08
09
10
11
12
a
b
c
d
e
f
p
q
r
A
B
C
D
E
F
G
H
J
P
Q
R
S
T
U
V
X
Y
Z
4
a
b
c
d
e
f
p
q
r
A
B
C
D
E
F
G
H
J
P
Q
R
S
T
U
V
X
Y
Z
4
a
b
c
d
e
f
p
q
r
A
B
C
D
E
F
G
H
J
P
Q
R
S
T
U
V
X
Y
Z
4
s
t
s
t
s
t
u
v
x
y
z
2
3
u
v
x
y
z
2
3
u
v
x
y
z
2
3
g
h
j
g
h
j
g
h
j
k
l
K
L
k
l
K
L
k
l
K
L
n
N
5
n
N
5
n
N
5
1) New Marking Layout for SC75, implemented at October 2005.
.
2011-07-21
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Package SOD323
BA592/BA892...
2011-07-21
9
Package TSLP-2-1
BA592/BA892...
2011-07-21
10
BA592/BA892...
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
2011-07-21
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