AUIRFS3307Z [INFINEON]

Advanced Process Technology; 先进的工艺技术
AUIRFS3307Z
型号: AUIRFS3307Z
厂家: Infineon    Infineon
描述:

Advanced Process Technology
先进的工艺技术

晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
文件: 总13页 (文件大小:267K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
PD - 96404A  
AUTOMOTIVE GRADE  
AUIRFS3307Z  
AUIRFSL3307Z  
HEXFET® Power MOSFET  
75V  
Features  
l
l
l
l
l
l
l
Advanced Process Technology  
D
VDSS  
UltraLowOn-Resistance  
175°COperatingTemperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free,RoHSCompliant  
Automotive Qualified *  
RDS(on) typ.  
max.  
ID (Silicon Limited)  
4.6mΩ  
5.8mΩ  
128A  
G
S
ID (Package Limited)  
120A  
Description  
Specifically designed for Automotive applications, this  
HEXFET® Power MOSFET utilizes the latest processing  
techniques to achieve extremely low on-resistance per  
siliconarea. Additionalfeaturesofthisdesign area175°C  
junctionoperatingtemperature, fastswitchingspeedand  
improved repetitive avalanche rating . These features  
combine to make this design an extremely efficient and  
reliable device for use in Automotive applications and a  
wide variety of other applications.  
D
D
S
S
D
G
G
D2Pak  
TO-262  
AUIRFS3307Z  
AUIRFSL3307Z  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice.Thesearestress  
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications  
is not implied.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability. Thethermal  
resistanceandpowerdissipationratingsaremeasuredunderboardmountedandstillairconditions.Ambienttemperature(TA)  
is 25°C, unless otherwise specified.  
Parameter  
Max.  
128  
90  
Units  
A
ID @ TC = 25°C  
ID @ TC = 100°C  
ID @ TC = 25°C  
IDM  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
120  
512  
230  
1.5  
PD @TC = 25°C  
Maximum Power Dissipation  
W
Linear Derating Factor  
W/°C  
V
± 20  
6.7  
VGS  
Gate-to-Source Voltage  
Peak Diode Recovery  
dv/dt  
EAS (Thermally limited)  
V/ns  
mJ  
A
Single Pulse Avalanche Energy  
Avalanche Current  
140  
IAR  
See Fig. 14, 15, 22a, 22b  
Repetitive Avalanche Energy  
EAR  
TJ  
mJ  
-55 to + 175  
300  
Operating Junction and  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
°C  
Thermal Resistance  
Parameter  
Typ.  
–––  
–––  
Max.  
0.65  
40  
Units  
Rθ  
Rθ  
Junction-to-Case  
Junction-to-Ambient (PCB Mount) , D2Pak  
JC  
°C/W  
JA  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
11/17/11  
AUIRFS/SL3307Z  
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Drain-to-Source Breakdown Voltage  
Min. Typ. Max. Units  
75 ––– –––  
––– 0.094 ––– V/°C Reference to 25°C, ID = 5mA  
Conditions  
VGS = 0V, ID = 250μA  
V(BR)DSS  
Δ
V
Δ
V(BR)DSS/ TJ Breakdown Voltage Temp. Coefficient  
Ω
V
S
RDS(on)  
VGS(th)  
gfs  
Static Drain-to-Source On-Resistance  
Gate Threshold Voltage  
Forward Transconductance  
–––  
2.0  
4.6  
5.8  
4.0  
m
VGS = 10V, ID = 75A  
VDS = VGS, ID = 150μA  
VDS = 50V, ID = 75A  
–––  
320 ––– –––  
––– ––– 20  
––– ––– 250  
––– ––– 100  
––– ––– -100  
––– 0.70 –––  
IDSS  
Drain-to-Source Leakage Current  
VDS = 75V, VGS = 0V  
VDS = 75V, VGS = 0V, TJ = 125°C  
VGS = 20V  
μA  
IGSS  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
Internal Gate Resistance  
nA  
V
GS = -20V  
Ω
RG(int)  
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter Min. Typ. Max. Units  
Total Gate Charge  
Conditions  
Qg  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
79  
19  
24  
55  
15  
64  
38  
65  
110  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
ID = 75A  
VDS = 38V  
Qgs  
Qgd  
Qsync  
td(on)  
tr  
Gate-to-Source Charge  
Gate-to-Drain ("Miller") Charge  
Total Gate Charge Sync. (Qg - Qgd)  
Turn-On Delay Time  
Rise Time  
nC  
V
GS = 10V  
ID = 75A, VDS =0V, VGS = 10V  
VDD = 49V  
ID = 75A  
Ω
RG = 2.6  
VGS = 10V  
ns  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
––– 4750 –––  
––– 420 –––  
––– 190 –––  
––– 440 –––  
––– 410 –––  
VGS = 0V  
V
DS = 50V  
pF ƒ = 1.0MHz  
C
C
oss eff. (ER) Effective Output Capacitance (Energy Related)  
oss eff. (TR) Effective Output Capacitance (Time Related)  
V
GS = 0V, VDS = 0V to 60V  
VGS = 0V, VDS = 0V to 60V  
Diode Characteristics  
Parameter  
Min. Typ. Max. Units  
Conditions  
MOSFET symbol  
D
S
IS  
Continuous Source Current  
––– ––– 128  
A
––– ––– 512  
(Body Diode)  
showing the  
integral reverse  
G
ISM  
Pulsed Source Current  
(Body Diode)  
p-n junction diode.  
TJ = 25°C, IS = 75A, VGS = 0V  
VSD  
trr  
Diode Forward Voltage  
Reverse Recovery Time  
––– –––  
1.3  
50  
V
–––  
–––  
–––  
–––  
–––  
33  
39  
42  
56  
2.2  
TJ = 25°C  
TJ = 125°C  
TJ = 25°C  
TJ = 125°C  
TJ = 25°C  
VR = 64V,  
IF = 75A  
di/dt = 100A/μs  
ns  
59  
63  
Qrr  
Reverse Recovery Charge  
nC  
A
84  
–––  
IRRM  
ton  
Reverse Recovery Current  
Forward Turn-On Time  
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  
Notes:  
 Calculated continuous current based on maximum allowable  
junction temperature. Bond wire current limit is 120A. Note that  
current limitations arising from heating of the device leads may  
„ ISD 75A, di/dt 1570A/μs, VDD V(BR)DSS, TJ 175°C.  
Pulse width 400μs; duty cycle 2%.  
† Coss eff. (TR) is a fixed capacitance that gives the same charging time  
as Coss while VDS is rising from 0 to 80% VDSS  
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as  
oss while VDS is rising from 0 to 80% VDSS  
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom  
mended footprint and soldering techniques refer to application  
note #AN-994.  
.
occur with some lead mounting arrangements.  
‚ Repetitive rating; pulse width limited by max. junction  
temperature.  
C
.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.050mH  
RG = 25Ω, IAS = 75A, VGS =10V. Part not recommended for use  
above this value.  
‰ Rθ is measured at TJ approximately 90°C.  
2
www.irf.com  
AUIRFS/SL3307Z  
Qualification Information†  
Automotive  
††  
(per AEC-Q101)  
Comments: This part number(s) passed Automotive  
qualification. IR’s Industrial and Consumer  
Qualification Level  
qualification level is granted by extension of the  
higher Automotive level.  
MSL1  
N/A  
3L-D2 PAK  
3L-TO-262  
Moisture Sensitivity Level  
Class M4(+/- 800V )†††  
Machine Model  
(per AEC-Q101-002)  
Class H1C(+/- 2000V )†††  
(per AEC-Q101-001)  
Human Body Model  
ESD  
Class C5(+/- 2000V )†††  
(per AEC-Q101-005)  
Charged Device Model  
Yes  
RoHS Compliant  
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/  
†† Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.  
†††  
Highest passing voltage  
www.irf.com  
3
AUIRFS/SL3307Z  
1000  
100  
10  
1000  
VGS  
15V  
10V  
8.0V  
6.0V  
5.5V  
5.0V  
4.8V  
4.5V  
VGS  
15V  
10V  
8.0V  
6.0V  
5.5V  
5.0V  
4.8V  
4.5V  
TOP  
TOP  
100  
10  
1
BOTTOM  
BOTTOM  
4.5V  
4.5V  
60μs PULSE WIDTH  
Tj = 175°C  
60μs PULSE WIDTH  
Tj = 25°C  
1
0.1  
1
10  
100  
0.1  
1
10  
100  
V
, Drain-to-Source Voltage (V)  
DS  
V
, Drain-to-Source Voltage (V)  
DS  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
1000  
100  
10  
2.5  
2.0  
1.5  
1.0  
0.5  
I
= 72A  
D
V
= 10V  
GS  
T = 175°C  
J
T
= 25°C  
J
1
V
= 25V  
DS  
60μs PULSE WIDTH  
0.1  
2
3
4
5
6
7
8
-60 -40 -20 0 20 40 60 80 100120140160180  
, Junction Temperature (°C)  
T
J
V
, Gate-to-Source Voltage (V)  
GS  
Fig 4. Normalized On-Resistance vs. Temperature  
Fig 3. Typical Transfer Characteristics  
12.0  
100000  
10000  
1000  
V
= 0V,  
= C  
f = 1 MHZ  
GS  
I = 72A  
D
C
C
C
+ C , C  
SHORTED  
ds  
iss  
gs  
gd  
= C  
10.0  
rss  
oss  
gd  
V
V
V
= 60V  
= 38V  
= 15V  
DS  
DS  
DS  
= C + C  
ds  
gd  
8.0  
6.0  
4.0  
2.0  
0.0  
C
iss  
C
oss  
C
rss  
100  
0
10 20 30 40 50 60 70 80 90  
1
10  
, Drain-to-Source Voltage (V)  
100  
Q , Total Gate Charge (nC)  
G
V
DS  
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage  
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage  
4
www.irf.com  
AUIRFS/SL3307Z  
10000  
1000  
100  
10  
1000  
100  
10  
OPERATION IN THIS AREA  
LIMITED BY R  
(on)  
DS  
T
= 175°C  
J
100μsec  
T
= 25°C  
J
1msec  
10msec  
DC  
1
1
Tc = 25°C  
Tj = 175°C  
V
= 0V  
GS  
Single Pulse  
0.1  
0.1  
1
10  
, Drain-to-Source Voltage (V)  
100  
0.0  
0.5  
1.0  
1.5  
2.0  
V
V
, Source-to-Drain Voltage (V)  
DS  
SD  
Fig 8. Maximum Safe Operating Area  
Fig 7. Typical Source-Drain Diode Forward Voltage  
150  
100  
95  
90  
85  
80  
75  
70  
65  
Id = 5mA  
Limited By Package  
125  
100  
75  
50  
25  
0
25  
50  
75  
100  
125  
150  
175  
-60 -40 -20 0 20 40 60 80 100120140160180  
T
, Case Temperature (°C)  
T
, Temperature ( °C )  
C
J
Fig 10. Drain-to-Source Breakdown Voltage  
Fig 9. Maximum Drain Current vs. Case Temperature  
1.2  
600  
I
D
TOP  
15A  
26A  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
500  
400  
300  
200  
100  
0
BOTTOM 75A  
20  
30  
V
40  
50  
60  
70  
80  
25  
50  
75  
100  
125  
150  
175  
Starting T , Junction Temperature (°C)  
J
Drain-to-Source Voltage (V)  
DS,  
Fig 12. Maximum Avalanche Energy vs. DrainCurrent  
Fig 11. Typical COSS Stored Energy  
www.irf.com  
5
AUIRFS/SL3307Z  
1
D = 0.50  
0.20  
0.1  
0.10  
R1  
R1  
R2  
R2  
R3  
R3  
0.05  
Ri (°C/W) τi (sec)  
0.1164 0.000088  
0.3009 0.001312  
τ
J τJ  
τ
τ
Cτ  
0.02  
τ
1τ1  
τ
3τ3  
0.01  
0.01  
2 τ2  
0.2313 0.009191  
Ci= τi/Ri  
/
Notes:  
SINGLE PULSE  
1. Duty Factor D = t1/t2  
2. Peak Tj = P dm x Zthjc + Tc  
( THERMAL RESPONSE )  
0.001  
1E-006  
1E-005  
0.0001  
0.001  
0.01  
0.1  
t
, Rectangular Pulse Duration (sec)  
1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case  
100  
10  
1
Allowed avalanche Current vs avalanche  
0.01  
Δ
pulsewidth, tav, assuming Tj = 150°C and  
Tstart =25°C (Single Pulse)  
Duty Cycle =  
Single Pulse  
0.05  
0.10  
Allowed avalanche Current vs avalanche  
ΔΤ  
pulsewidth, tav, assuming  
Tstart = 150°C.  
j = 25°C and  
0.1  
1.0E-06  
1.0E-05  
1.0E-04  
1.0E-03  
1.0E-02  
1.0E-01  
tav (sec)  
Fig 14. Typical Avalanche Current vs.Pulsewidth  
150  
125  
100  
75  
Notes on Repetitive Avalanche Curves , Figures 14, 15:  
(For further info, see AN-1005 at www.irf.com)  
1. Avalanche failures assumption:  
Purely a thermal phenomenon and failure occurs at a temperature far in  
excess of Tjmax. This is validated for every part type.  
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.  
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.  
4. PD (ave) = Average power dissipation per single avalanche pulse.  
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase  
during avalanche).  
TOP  
BOTTOM 1.0% Duty Cycle  
= 75A  
Single Pulse  
I
D
6. Iav = Allowable avalanche current.  
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as  
25°C in Figure 14, 15).  
50  
tav = Average time in avalanche.  
D = Duty cycle in avalanche = tav ·f  
25  
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)  
0
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC  
25  
50  
75  
100  
125  
150  
175  
Iav = 2DT/ [1.3·BV·Zth]  
EAS (AR) = PD (ave)·tav  
Starting T , Junction Temperature (°C)  
J
Fig 15. Maximum Avalanche Energy vs. Temperature  
6
www.irf.com  
AUIRFS/SL3307Z  
20  
15  
10  
5
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
I = 48A  
F
V
= 64V  
R
T = 25°C  
J
T = 125°C  
J
I
I
I
I
= 150μA  
= 250μA  
= 1.0mA  
= 1.0A  
D
D
D
D
0
0
200  
400  
600  
800  
1000  
-75 -50 -25  
0
25 50 75 100125 150 175200  
, Temperature ( °C )  
di /dt (A/μs)  
T
F
J
Fig. 17 - Typical Recovery Current vs. dif/dt  
Fig 16. Threshold Voltage vs. Temperature  
20  
420  
I = 72A  
I = 48A  
F
F
V
= 64V  
V
= 64V  
R
R
340  
260  
180  
100  
20  
T = 25°C  
T = 25°C  
J
J
15  
10  
5
T = 125°C  
J
T = 125°C  
J
0
0
200  
400  
600  
800  
1000  
0
200  
400  
600  
800  
1000  
di /dt (A/μs)  
di /dt (A/μs)  
F
F
Fig. 18 - Typical Recovery Current vs. dif/dt  
Fig. 19 - Typical Stored Charge vs. dif/dt  
420  
I = 72A  
F
V
= 64V  
R
340  
260  
180  
100  
20  
T = 25°C  
J
T = 125°C  
J
0
200  
400  
600  
800  
1000  
di /dt (A/μs)  
F
Fig. 20 - Typical Stored Charge vs. dif/dt  
www.irf.com  
7
AUIRFS/SL3307Z  
Driver Gate Drive  
P.W.  
P.W.  
Period  
D.U.T  
Period  
D =  
+
*
=10V  
V
GS  
ƒ
CircuitLayoutConsiderations  
Low Stray Inductance  
Ground Plane  
Low Leakage Inductance  
Current Transformer  
-
D.U.T. I Waveform  
SD  
+
‚
-
Reverse  
Recovery  
Current  
Body Diode Forward  
„
Current  
di/dt  
-
+
D.U.T. V Waveform  
DS  
Diode Recovery  
dv/dt  

V
DD  
VDD  
Re-Applied  
Voltage  
dv/dtcontrolledbyRG  
RG  
+
-
Body Diode  
Forward Drop  
Driver same type as D.U.T.  
ISD controlled by Duty Factor "D"  
D.U.T. - Device Under Test  
InductorCurrent  
I
SD  
Ripple  
5%  
* VGS = 5V for Logic Level Devices  
Fig 20. Peak Diode Recovery dv/dt Test Circuit for N-Channel  
HEXFET® Power MOSFETs  
V
(BR)DSS  
15V  
t
p
DRIVER  
+
L
V
DS  
D.U.T  
AS  
R
G
V
DD  
-
I
A
V
2
GS  
Ω
0.01  
t
p
I
AS  
Fig 21b. Unclamped Inductive Waveforms  
Fig 21a. Unclamped Inductive Test Circuit  
LD  
VDS  
VDS  
90%  
+
-
VDD  
10%  
VGS  
D.U.T  
VGS  
Pulse Width < 1μs  
Duty Factor < 0.1%  
td(on)  
td(off)  
tr  
tf  
Fig 22a. Switching Time Test Circuit  
Fig 22b. Switching Time Waveforms  
Id  
Vds  
Vgs  
L
VCC  
DUT  
Vgs(th)  
0
1K  
Qgs1  
Qgs2  
Qgd  
Qgodr  
Fig 23a. Gate Charge Test Circuit  
Fig 23b. Gate Charge Waveform  
8
www.irf.com  
AUIRFS/SL3307Z  
D2Pak (TO-263AB) Package Outline  
Dimensions are shown in millimeters (inches)  
D2Pak Part Marking Information  
PartNumber  
AUFS3307Z  
DateCode  
Y= Year  
WW= Work Week  
A= Automotive, Lead Free  
IRLogo  
YWWA  
XX or XX  
LotCode  
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/  
www.irf.com  
9
AUIRFS/SL3307Z  
TO-262 Package Outline  
Dimensions are shown in millimeters (inches)  
TO-262 Part Marking Information  
PartNumber  
AUFSL3307Z  
DateCode  
Y= Year  
WW= Work Week  
A= Automotive, Lead Free  
IRLogo  
YWWA  
XX or XX  
LotCode  
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/  
10  
www.irf.com  
AUIRFS/SL3307Z  
D2Pak (TO-263AB) Tape & Reel Information  
Dimensions are shown in millimeters (inches)  
TRR  
1.60 (.063)  
1.50 (.059)  
1.60 (.063)  
1.50 (.059)  
4.10 (.161)  
3.90 (.153)  
0.368 (.0145)  
0.342 (.0135)  
FEED DIRECTION  
TRL  
11.60 (.457)  
11.40 (.449)  
1.85 (.073)  
1.65 (.065)  
24.30 (.957)  
23.90 (.941)  
15.42 (.609)  
15.22 (.601)  
1.75 (.069)  
1.25 (.049)  
10.90 (.429)  
10.70 (.421)  
4.72 (.136)  
4.52 (.178)  
16.10 (.634)  
15.90 (.626)  
FEED DIRECTION  
13.50 (.532)  
12.80 (.504)  
27.40 (1.079)  
23.90 (.941)  
4
330.00  
(14.173)  
MAX.  
60.00 (2.362)  
MIN.  
30.40 (1.197)  
MAX.  
NOTES :  
1. COMFORMS TO EIA-418.  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION MEASURED @ HUB.  
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.  
26.40 (1.039)  
24.40 (.961)  
4
3
www.irf.com  
11  
AUIRFS/SL3307Z  
Ordering Information  
Base part  
Package Type  
Standard Pack  
Form  
Complete Part Number  
Quantity  
AUIRFSL3307Z  
AUIRFS3307Z  
TO-262  
D2Pak  
Tube  
Tube  
50  
50  
AUIRFSL3307Z  
AUIRFS3307Z  
Tape and Reel Left  
Tape and Reel Right  
800  
800  
AUIRFS3307ZTRL  
AUIRFS3307ZTRR  
12  
www.irf.com  
AUIRFS/SL3307Z  
IMPORTANTNOTICE  
Unlessspecificallydesignatedfortheautomotivemarket, InternationalRectifierCorporationanditssubsidiaries(IR)reserve  
the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services  
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow  
automotive industry and / or customer specific requirements with regards to product discontinuance and process change  
notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.  
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s  
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this  
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily  
performed.  
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products  
and applications using IR components. To minimize the risks with customer products and applications, customers should  
provideadequatedesignandoperatingsafeguards.  
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is  
accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with  
alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation.  
Information of third parties may be subject to additional restrictions.  
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or  
service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive  
business practice. IR is not responsible or liable for any such statements.  
IRproductsarenotdesigned, intended, orauthorizedforuseascomponentsinsystemsintendedforsurgicalimplantintothe  
body, orinotherapplicationsintendedtosupportorsustainlife, orinanyotherapplicationinwhichthefailureoftheIR product  
could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such  
unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees,  
subsidiaries, affiliates, anddistributorsharmlessagainstallclaims, costs, damages, andexpenses, andreasonableattorney  
feesarisingoutof, directlyorindirectly, anyclaimofpersonalinjuryordeathassociatedwithsuchunintendedorunauthorized  
use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.  
OnlyproductscertifiedasmilitarygradebytheDefenseLogisticsAgency(DLA)oftheUSDepartmentofDefense,aredesigned  
and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers  
acknowledgeandagreethatanyuseofIRproductsnotcertifiedbyDLAasmilitary-grade,inapplicationsrequiringmilitarygrade  
products, is solely at the Buyer’s own risk and that they are solely responsible for compliance with all legal and regulatory  
requirements in connection with such use.  
IRproductsareneitherdesignednorintendedforuseinautomotiveapplicationsorenvironmentsunlessthespecificIRproducts  
are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”.  
Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be  
responsible for any failure to meet such requirements.  
For technical support, please contact IR’s Technical Assistance Center  
http://www.irf.com/technical-info/  
WORLDHEADQUARTERS:  
101 N. Sepulveda Blvd., El Segundo, California 90245  
Tel:(310)252-7105  
www.irf.com  
13  

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