AUIRFS3207Z [INFINEON]
Specifically designed for Automotive applications; 专为汽车应用
| 型号： | AUIRFS3207Z |
| 厂家： | 
Infineon |
| 描述： | Specifically designed for Automotive applications |
| 文件： | 总13页 (文件大小：266K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96403A
AUTOMOTIVE GRADE
AUIRFS3207Z
AUIRFSL3207Z
Features
l
Advanced Process Technology
UltraLowOn-Resistance
175°COperatingTemperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free,RoHSCompliant
Automotive Qualified *
HEXFET® Power MOSFET
l
l
l
l
l
l
D
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
ID (Package Limited)
75V
3.3m
4.1m
170A
120A
G
S
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
siliconarea. Additionalfeaturesofthisdesign area175°C
junctionoperatingtemperature, fastswitchingspeedand
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
D
D
S
S
D
G
G
D2Pak
TO-262
AUIRFSL3207Z
wide variety of other applications.
AUIRFS3207Z
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
StressesbeyondthoselistedunderAbsoluteMaximumRatingsmaycausepermanentdamagetothedevice.Thesearestress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability. Thethermal
resistanceandpowerdissipationratingsaremeasuredunderboardmountedandstillairconditions.Ambienttemperature(TA)
is 25°C, unless otherwise specified.
Max.
Parameter
Units
ID @ TC = 25°C
170
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
120
A
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
120
670
PD @TC = 25°C
300
Maximum Power Dissipation
W
W/°C
V
2.0
Linear Derating Factor
VGS
dv/dt
EAS
IAR
± 20
Gate-to-Source Voltage
16
170
Peak Diode Recovery
V/ns
mJ
A
Single Pulse Avalanche Energy (Thermally limited)
Avalanche Current
See Fig. 14, 15, 22a, 22b
EAR
TJ
Repetitive Avalanche Energy
mJ
-55 to + 175
300
Operating Junction and
TSTG
°C
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mount) , D2Pak
Typ.
–––
–––
Max.
0.50
40
Units
RθJC
°C/W
Rθ
JA
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
11/17/11
AUIRFS/SL3207Z
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Min. Typ. Max. Units
75 ––– –––
––– 0.091 ––– V/°C Reference to 25°C, ID = 5mA
Conditions
VGS = 0V, ID = 250μA
V(BR)DSS
V
V
/ T
(BR)DSS Δ
Δ
J
RDS(on)
VGS(th)
gfs
–––
2.0
3.3
4.1
4.0
VGS = 10V, ID = 75A
VDS = VGS, ID = 150μA
VDS = 50V, ID = 75A
m
V
Ω
–––
Forward Transconductance
280 ––– –––
–––
––– –––
S
RG(int)
IDSS
Internal Gate Resistance
Drain-to-Source Leakage Current
0.80 –––
20
Ω
V
V
DS = 75V, VGS = 0V
μA
––– ––– 250
––– ––– 100
––– ––– -100
DS = 75V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
VGS = 20V
GS = -20V
nA
V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge
Min. Typ. Max. Units
––– 120 170
Conditions
Qg
ID = 75A
DS = 38V
VGS = 10V
Qgs
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
–––
27
33
87
20
68
55
68
–––
–––
–––
–––
–––
–––
–––
V
nC
ns
Qgd
Qsync
ID = 75A, VDS =0V, VGS = 10V
VDD = 49V
td(on)
tr
ID = 75A
td(off)
tf
Turn-Off Delay Time
Fall Time
R = 2.7
Ω
G
VGS = 10V
Ciss
Input Capacitance
––– 6920 –––
––– 600 –––
––– 270 –––
––– 770 –––
––– 960 –––
VGS = 0V
Coss
Output Capacitance
Reverse Transfer Capacitance
V
DS = 50V
ƒ = 1.0MHz
GS = 0V, VDS = 0V to 60V
Crss
pF
Coss eff. (ER)
Coss eff. (TR)
V
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
VGS = 0V, VDS = 0V to 60V
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
D
S
––– ––– 170
A
(Body Diode)
Pulsed Source Current
(Body Diode)
showing the
integral reverse
G
ISM
––– ––– 670
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
––– –––
1.3
54
V
TJ = 25°C, IS = 75A, VGS = 0V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VR = 64V,
IF = 75A
di/dt = 100A/μs
–––
–––
–––
–––
–––
36
41
50
67
2.4
ns
62
Qrr
Reverse Recovery Charge
75
nC
A
100
–––
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 120A. Note that
current limitations arising from heating of the device leads may
occur with some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.033mH
RG = 25Ω, IAS = 102A, VGS =10V. Part not recommended for use
above this value.
ISD ≤ 75A, di/dt ≤ 1730A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
ꢀ Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS
.
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application
note #AN-994.
Rθ is measured at TJ approximately 90°C.
2
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AUIRFS/SL3207Z
Qualification Information†
Automotive
††
(per AEC-Q101)
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer
Qualification Level
qualification level is granted by extension of the
higher Automotive level.
MSL1
N/A
3L-D2 PAK
3L-TO-262
Moisture Sensitivity Level
Class M4(+/- 800V )†††
Machine Model
(per AEC-Q101-002)
Class H2(+/- 4000V )†††
(per AEC-Q101-001)
Human Body Model
ESD
Class C5(+/- 2000V )†††
(per AEC-Q101-005)
Charged Device Model
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
†††
Highest passing voltage
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3
AUIRFS/SL3207Z
1000
1000
100
10
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
100
4.5V
60μs PULSE WIDTH
≤
Tj = 175°C
60μs PULSE WIDTH
≤
Tj = 25°C
10
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
1000
100
10
I
= 75A
D
V
= 10V
GS
T
= 175°C
J
T
= 25°C
J
1
V
= 25V
DS
≤
60μs PULSE WIDTH
0.1
2
3
4
5
6
7
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
T
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
12.0
100000
10000
1000
V
= 0V,
= C
f = 1 MHZ
GS
I
= 75A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
= C
10.0
8.0
6.0
4.0
2.0
0.0
rss
oss
gd
V
V
V
= 60V
= 38V
= 15V
DS
DS
DS
= C + C
ds
gd
C
iss
C
oss
C
rss
100
0
20
40
60
80
100 120 140
1
10
, Drain-to-Source Voltage (V)
100
Q , Total Gate Charge (nC)
V
G
DS
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
4
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AUIRFS/SL3207Z
1000
100
10
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100μsec
T
= 25°C
J
1msec
10msec
DC
1
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.0
0.5
1.0
1.5
2.0
2.5
1
10
, Drain-to-Source Voltage (V)
100
V
, Source-to-Drain Voltage (V)
V
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
180
100
95
90
85
80
75
70
Id = 5mA
Limited By Package
160
140
120
100
80
60
40
20
0
25
50
75
100
125
150
175
-60 -40 -20 0 20 40 60 80 100120140160180
T
, Case Temperature (°C)
T
, Temperature ( °C )
C
J
Fig 10. Drain-to-Source Breakdown Voltage
Fig 9. Maximum Drain Current vs. Case Temperature
2.5
700
I
D
600
500
400
300
200
100
0
TOP
17A
30A
2.0
1.5
1.0
0.5
0.0
BOTTOM 102A
-10
0
10 20 30 40 50 60 70 80
Drain-to-Source Voltage (V)
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
V
DS,
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
Fig 11. Typical COSS Stored Energy
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5
AUIRFS/SL3207Z
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
0.1049 0.000099
τ
J τJ
τ
τ
Cτ
τ
1τ1
τ
2 τ2
0.02
0.01
3τ3
0.2469 0.001345
0.1484 0.008469
Ci= τi/Ri
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Duty Cycle =
Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Δ
0.01
Tstart =25°C (Single Pulse)
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tstart = 150°C.
j = 25°C and
ΔΤ
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
200
180
160
140
120
100
80
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
TOP
BOTTOM 1.0% Duty Cycle
= 102A
Single Pulse
I
D
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
60
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
40
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
20
0
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
25
50
75
100
125
150
175
Iav = 2DT/ [1.3·BV·Zth]
Starting T , Junction Temperature (°C)
EAS (AR) = PD (ave)·tav
J
Fig 15. Maximum Avalanche Energy vs. Temperature
6
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AUIRFS/SL3207Z
20
15
10
5
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
I = 30A
F
V
= 64V
R
T = 25°C
J
T = 125°C
J
I
I
I
I
= 150μA
= 250μA
= 1.0mA
= 1.0A
D
D
D
D
0
0
200
400
600
800
1000
-75 -50 -25
0
25 50 75 100125 150 175200
, Temperature ( °C )
di /dt (A/μs)
T
F
J
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage vs. Temperature
20
340
I = 45A
I = 30A
F
F
V
= 64V
V
= 64V
R
R
T = 25°C
T = 25°C
J
J
15
10
5
260
180
100
20
T = 125°C
J
T = 125°C
J
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt (A/μs)
di /dt (A/μs)
F
F
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Stored Charge vs. dif/dt
340
I = 45A
F
V
= 64V
R
T = 25°C
J
260
180
100
20
T = 125°C
J
0
200
400
600
800
1000
di /dt (A/μs)
F
Fig. 20 - Typical Stored Charge vs. dif/dt
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7
AUIRFS/SL3207Z
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
CircuitLayoutConsiderations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
InductorCurrent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 20. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
2
GS
Ω
0.01
t
p
I
AS
Fig 21b. Unclamped Inductive Waveforms
Fig 21a. Unclamped Inductive Test Circuit
LD
VDS
VDS
90%
+
-
VDD
10%
VGS
D.U.T
VGS
Pulse Width < 1μs
Duty Factor < 0.1%
td(on)
td(off)
tr
tf
Fig 22a. Switching Time Test Circuit
Fig 22b. Switching Time Waveforms
Id
Vds
Vgs
L
VCC
DUT
Vgs(th)
0
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 23a. Gate Charge Test Circuit
Fig 23b. Gate Charge Waveform
8
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AUIRFS/SL3207Z
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
PartNumber
AUFS3207Z
DateCode
Y= Year
WW= Work Week
A= Automotive, Lead Free
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
9
AUIRFS/SL3207Z
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
PartNumber
AUFSL3207Z
DateCode
Y= Year
WW= Work Week
A= Automotive, Lead Free
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRFS/SL3207Z
D2Pak (TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
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11
AUIRFS/SL3207Z
Ordering Information
Base part
Package Type
Standard Pack
Form
Complete Part Number
Quantity
AUIRFSL3207Z
AUIRFS3207Z
TO-262
D2Pak
Tube
Tube
50
50
AUIRFSL3207Z
AUIRFS3207Z
Tape and Reel Left
Tape and Reel Right
800
800
AUIRFS3207ZTRL
AUIRFS3207ZTRR
12
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AUIRFS/SL3207Z
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the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
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standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
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相关型号：
AUIRFS3306TRL
Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
INFINEON
AUIRFS3607
Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3
INFINEON
AUIRFS3607TRL
Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3
INFINEON
AUIRFS3607TRR
Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3
INFINEON
AUIRFS3806
Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
INFINEON
AUIRFS3806TRL
Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
INFINEON
AUIRFS3806TRR
Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3
INFINEON
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