AUIRFR2607ZTR_技术文档

PD - 96323

AUTOMOTIVE MOSFET

AUIRFR2607Z

HEXFET^®Power MOSFET

Features

V_(BR)DSS

75V

D

S

l

AdvancedProcessTechnology

R_DS(on)typ.

max.

UltraLowOn-Resistance

175°COperatingTemperature

FastSwitching

17.6m

Ω

22m

45A

Ω

G

RepetitiveAvalancheAlloweduptoTjmax

Lead-Free,RoHSCompliant

AutomotiveQualified*

I_{D (Silicon Limited)}

I_{D (Package Limited)}

42A

Description

D

Specifically designed for Automotive applications, this

HEXFET^®Power MOSFET utilizes the latest processing

techniques to achieve extremely low on-resistance per

siliconarea. Additionalfeaturesofthisdesign area175°C

junction operating temperature, fast switching speed and

improved repetitive avalanche rating . These features

combine to make this design an extremely efficient and

reliabledeviceforuseinAutomotiveapplicationsandawide

varietyofotherapplications.

S

D

G

D-Pak

AUIRFR2607Z

G

D

S

Gate

Drain

Source

AbsoluteMaximumRatings

Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice. These

arestressratingsonly;andfunctionaloperationofthedeviceattheseoranyotherconditionbeyondthoseindicatedin

thespecificationsisnotimplied.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevice

reliability.Thethermalresistanceandpowerdissipationratingsaremeasuredunderboardmountedandstillairconditions.

Ambienttemperature(T_A)is25°C, unlessotherwisespecified.

I_D@ T_C= 25°C Continuous Drain Current, V_GS@ 10V (Silicon Limited)

I_D@ T_C= 100°C Continuous Drain Current, V_GS@ 10V (Silicon Limited)

I_D@ T_C= 25°C Continuous Drain Current, V_GS@ 10V (Package Limited)

45

32

A

42

I_DM

180

Pulsed Drain Current

P_D@T_C= 25°C

110

Power Dissipation

W

W/°C

V

0.72

Linear Derating Factor

V_GS

E_AS

± 20

Gate-to-Source Voltage

96

Single Pulse Avalanche Energy (Thermally limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

mJ

E

_AS(Tested )

96

I_AR

See Fig.12a, 12b, 15, 16

A

E_AR

T_J

Repetitive Avalanche Energy

Operating Junction and

mJ

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

Max.

1.38

50

Units

R_θJC

R_θJA

Junction-to-Case

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

°C/W

110

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

1

08/24/10

AUIRFR2607Z

Static Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Drain-to-Source Breakdown Voltage

Min. Typ. Max. Units

75 ––– –––

Conditions

V_GS= 0V, I_D= 250µA

V_(BR)DSS

V

Reference to 25°C, I_D= 1mA

∆ ∆

V_(BR)DSS/ T_JBreakdown Voltage Temp. Coefficient ––– 0.074 ––– V/°C

V

_GS= 10V, I_D= 30A

V_DS= V_GS, I_D= 50µA

_DS= 25V, I_D= 30A

V_DS= 75V, V_GS= 0V

_DS= 75V, V_GS= 0V, T_J= 125°C

V_GS= 20V

_GS= -20V

R_DS(on)

V_GS(th)

gfs

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

–––

2.0

17.6

–––

22

4.0

–––

20

Ω

V

m

V

Forward Transconductance

36

S

I_DSS

Drain-to-Source Leakage Current

–––

µA

V

250

200

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

nA

V

––– -200

Dynamic Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Conditions

Parameter

Total Gate Charge

Min. Typ. Max. Units

I_D= 30A

Q_g

Q_gs

Q_gd

t_d(on)

t_r

–––

34

8.9

14

59

39

28

51

V

_DS= 60V

nC

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

–––

V_GS= 10V

V_DD= 38V

I_D= 30A

ns

R_G= 15 Ω

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

V_GS= 10V

L_D

Internal Drain Inductance

Between lead,

6mm (0.25in.)

from package

–––

4.5

7.5

–––

nH

pF

L_S

Internal Source Inductance

and center of die contact

V_GS= 0V

C_iss

Input Capacitance

––– 1440 –––

V

_DS= 25V

C_oss

C_rss

C_oss

Output Capacitance

–––

190

110

720

130

230

–––

ƒ = 1.0MHz

Reverse Transfer Capacitance

Output Capacitance

V

_GS= 0V, V_DS= 1.0V, ƒ = 1.0MHz

_GS= 0V, V_DS= 60V, ƒ = 1.0MHz

_GS= 0V, V_DS= 0V to 60V

Output Capacitance

C_osseff.

Effective Output Capacitance

Diode Characteristics

Conditions

Parameter

Min. Typ. Max. Units

MOSFET symbol

Continuous Source Current

I

S

–––

––– 45

showing the

(Body Diode)

A

integral reverse

Pulsed Source Current

(Body Diode)

SM

–––

180

p-n junction diode.

T = 25°C, I = 30A, V = 0V

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-On Time

–––

30

1.3

45

42

V

t

J

S

GS

SD

T = 25°C, I = 30A, V_DD= 38V

ns

nC

J

F

rr

di/dt = 100A/µs

28

Q

rr

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

t

on

Notes through are on page 3

2

www.irf.com

AUIRFR2607Z

Qualification Information^†

Automotive

††

(per AEC-Q101)

Comments:

This part number(s) passed

Qualification Level

Automotive qualification. IR’s Industrial and

Consumer qualification level is granted by

extension of the higher Automotive level.

Moisture Sensitivity Level

MSL1

Class M4(425V)

D PAK

Machine Model

(per AEC-Q101-002)

Class H1B(1000V)

(per AEC-Q101-001)

Class C5(1125V)

(per AEC-Q101-005)

Yes

Human Body Model

ESD

Charged Device

Model

RoHS Compliant

Qualification standards can be found at International Rectifiers web site: http//www.irf.com/

Exceptions to AEC-Q101 requirements are noted in the qualification report.

Notes:

ꢀ

Limited by T_Jmax, see Fig.12a, 12b, 15, 16 for typical

repetitive avalanche performance.

Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11).

Limited by T_Jmax, starting T_J= 25°C, L = 0.21mH

R_G= 25Ω, I_AS= 30A, V_GS=10V. Part not

recommended for use above this value.

Pulse width ≤ 1.0ms; duty cycle ≤ 2%.

C_osseff. is a fixed capacitance that gives the

same charging time as C_osswhile V_DSis rising

This value determined from sample failure population. 100%

tested to this value in production.

When mounted on 1" square PCB (FR-4 or G-10 Material) .

For recommended footprint and soldering techniques refer to

application note #AN-994

R_θis measured at T_Japproximately 90°C

Calculated continuous current based on maximum allowable

junction temperature. Package limitation current is 42A

from 0 to 80% V_DSS

.

www.irf.com

3

AUIRFR2607Z

1000

100

10

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

VGS

15V

TOP

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

100

10

1

BOTTOM

4.5V

60µs PULSE WIDTH

Tj = 25°C

≤

60µs PULSE WIDTH

Tj = 175°C

≤

0.1

1

0.1

1

10

100

0.1

1

10

100

V

, Drain-to-Source Voltage (V)

V

, Drain-to-Source Voltage (V)

DS

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000.0

60

T

= 25°C

J

50

40

30

20

10

0

100.0

10.0

1.0

T

= 175°C

J

T

= 175°C

J

T

= 25°C

= 20V

J

V

DS

V

= 10V

DS

380µs PULSE WIDTH

≤ 60µs PULSE WIDTH

0.1

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0 10.0

0

10

20

30

40

V

, Gate-to-Source Voltage (V)

GS

I

Drain-to-Source Current (A)

D,

Fig 3. Typical Transfer Characteristics

Fig 4. Typical Forward Transconductance

Vs. DrainCurrent

4

www.irf.com

AUIRFR2607Z

2400

2000

1600

1200

800

400

0

20

16

12

8

V

C

= 0V,

f = 1 MHZ

GS

I

= 30A

D

= C + C , C SHORTED

iss

gs

gd ds

V

= 60V

DS

C

= C

rss

gd

VDS= 30V

VDS= 12V

C

= C + C

ds

oss

gd

Ciss

4

Coss

Crss

FOR TEST CIRCUIT

SEE FIGURE 13

0

10

20

30

40

50

1

10

100

Q

Total Gate Charge (nC)

G

V

, Drain-to-Source Voltage (V)

DS

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

1000.0

1000

100

10

OPERATION IN THIS AREA

LIMITED BY R

(on)

DS

100.0

10.0

1.0

T

= 175°C

J

100µsec

1

T

= 25°C

10msec

J

Tc = 25°C

Tj = 175°C

Single Pulse

1msec

DC

V

= 0V

GS

2.0

, Source-to-Drain Voltage (V)

0.1

1

10

100

1000

0.0

0.4

V

0.8

1.2

1.6

2.4

V

, Drain-toSource Voltage (V)

DS

SD

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

www.irf.com

5

AUIRFR2607Z

2.5

2.0

1.5

1.0

0.5

50

I

= 30A

LIMITED BY PACKAGE

D

V

= 10V

GS

40

30

20

10

0

25

50

75

100

125

150

175

-60 -40 -20

0

20 40 60 80 100 120 140 160 180

T

, Case Temperature (°C)

C

T

, Junction Temperature (°C)

J

Fig 10. Normalized On-Resistance

Fig 9. Maximum Drain Current Vs.

Vs. Temperature

Case Temperature

10

1

0.1

D = 0.50

0.20

0.10

R₁

R₂

Ri (°C/W) τi (sec)

0.71826 0.000423

0.66173 0.004503

τ

^Jτ_J

τ

0.05

^Cτ

¹τ₁

Ci= τi/Ri

τ

²τ₂

0.02

0.01

0.001

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

1E-006

1E-005

0.0001

0.001

0.01

0.1

t

, Rectangular Pulse Duration (sec)

1

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

6

www.irf.com

AUIRFR2607Z

400

300

200

100

0

15V

I

D

TOP

3.5A

4.8A

30A

DRIVER

+

L

V

BOTTOM

DS

D.U.T

AS

R

G

V

DD

-

I

A

2

V0_GV_S

Ω

0.01

t

p

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

25

50

75

100

125

150

175

Starting T , Junction Temperature (°C)

J

I

AS

Fig 12c. Maximum Avalanche Energy

Fig 12b. Unclamped Inductive Waveforms

Vs. Drain Current

Q

G

10 V

Q

5.0

4.5

4.0

3.5

3.0

2.5

2.0

GS

GD

I

= 1.0A

D

= 1.0mA

= 250µA

V

G

ID = 50µA

Charge

Fig 13a. Basic Gate Charge Waveform

L

VCC

DUT

0

-75 -50 -25

0

25 50 75 100 125 150 175

1K

T , Temperature ( °C )

J

Fig 14. Threshold Voltage Vs. Temperature

Fig 13b. Gate Charge Test Circuit

www.irf.com

7

AUIRFR2607Z

1000

Duty Cycle = Single Pulse

100

Allowed avalanche Current vs

avalanche pulsewidth, tav

assuming ∆Tj = 25°C due to

avalanche losses. Note: In no

case should Tj be allowed to

exceed Tjmax

0.01

10

0.05

0.10

1

0.1

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

Fig 15. Typical Avalanche Current Vs.Pulsewidth

100

80

60

40

20

Notes on Repetitive Avalanche Curves , Figures 15, 16:

(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T_jmax. This is validated for

every part type.

2. Safe operation in Avalanche is allowed as long asT_jmaxis

not exceeded.

3. Equation below based on circuit and waveforms shown in

Figures 12a, 12b.

4. P_{D (ave)}= Average power dissipation per single

avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. I_av= Allowable avalanche current.

TOP

BOTTOM 1% Duty Cycle

= 30A

Single Pulse

I

D

7. ∆T = Allowable rise in junction temperature, not to exceed

T_jmax(assumed as 25°C in Figure 15, 16).

t_{av =}Average time in avalanche.

0

25

50

75

100

125

150

175

D = Duty cycle in avalanche = t_av·f

Z_thJC(D, t_av) = Transient thermal resistance, see figure 11)

Starting T , Junction Temperature (°C)

J

P_{D (ave)}= 1/2 ( 1.3·BV·I_av) = DT/ Z_thJC

Fig 16. Maximum Avalanche Energy

I_av= 2DT/ [1.3·BV·Z_th]

E_{AS (AR)}= P_{D (ave)}·t_av

Vs. Temperature

8

www.irf.com

AUIRFR2607Z

Driver Gate Drive

P.W.

Period

D =

D.U.T

+

*

=10V

V

GS

CircuitLayoutConsiderations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

-

D.U.T. I Waveform

SD

+

-

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

-

+

D.U.T. V Waveform

DS

Diode Recovery

dv/dt

V

DD

V_DD

Re-Applied

Voltage

• dv/dtcontrolledbyR_G

R_G

+

-

Body Diode

Forward Drop

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

Inductor Curent

I

SD

Ripple

≤ 5%

* V_GS= 5V for Logic Level Devices

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET^®Power MOSFETs

R_D

V_DS

V_GS

D.U.T.

R_G

⁺V_DD

-

10V

PulseWidth ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 18a. Switching Time Test Circuit

V

DS

90%

10%

V

GS

t

r

t

f

d(on)

d(off)

Fig 18b. Switching Time Waveforms

www.irf.com

9

AUIRFR2607Z

D-Pak (TO-252AA) Package Outline

Dimensions are shown in millimeters (inches)

D-Pak (TO-252AA) Part Marking Information

PartNumber

AUFR2607Z

DateCode

Y= Year

WW= Work Week

A= Automotive, Lead Free

IRLogo

YWWA

XX or XX

LotCode

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

10

www.irf.com

AUIRFR2607Z

D-Pak (TO-252AA) Tape & Reel Information

Dimensions are shown in millimeters (inches)

TR

TRL

TRR

16.3 ( .641 )

15.7 ( .619 )

16.3 ( .641 )

15.7 ( .619 )

12.1 ( .476 )

11.9 ( .469 )

8.1 ( .318 )

7.9 ( .312 )

FEED DIRECTION

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

13 INCH

16 mm

NOTES :

1. OUTLINE CONFORMS TO EIA-481.

www.irf.com

11

AUIRFR2607Z

Ordering Information

Base part

Package Type

Standard Pack

Complete Part Number

Form

Quantity

AUIRFR2607Z

DPak

Tube

Tape and Reel

Tape and Reel Left

Tape and Reel Right

75

AUIRFR2607Z

AUIRFR2607ZTR

AUIRF2607ZTRL

AUIRF2607ZTRR

2000

3000

12

www.irf.com

AUIRFR2607Z

IMPORTANTNOTICE

Unlessspecificallydesignatedfortheautomotivemarket,InternationalRectifierCorporationanditssubsidiaries(IR)reserve

therighttomakecorrections,modifications,enhancements,improvements,andotherchangestoitsproductsandservices

atanytimeandtodiscontinueanyproductorserviceswithoutnotice. Partnumbersdesignatedwiththe“AU”prefixfollow

automotiveindustryand/orcustomerspecificrequirementswithregardstoproductdiscontinuanceandprocesschange

notification.AllproductsaresoldsubjecttoIR’stermsandconditionsofsalesuppliedatthetimeoforderacknowledgment.

IRwarrantsperformanceofitshardwareproductstothespecificationsapplicableatthetimeofsaleinaccordancewithIR’s

standardwarranty. TestingandotherqualitycontroltechniquesareusedtotheextentIRdeemsnecessarytosupportthis

warranty.Exceptwheremandatedbygovernmentrequirements,testingofallparametersofeachproductisnotnecessarily

performed.

IRassumesnoliabilityforapplicationsassistanceorcustomerproductdesign.Customersareresponsiblefortheirproducts

andapplicationsusingIRcomponents.Tominimizetheriskswithcustomerproductsandapplications,customersshould

provideadequatedesignandoperatingsafeguards.

ReproductionofIRinformationinIRdatabooksordatasheetsispermissibleonlyifreproductioniswithoutalterationandis

accompaniedbyallassociatedwarranties,conditions,limitations,andnotices. Reproductionofthisinformationwithalterations

isanunfairanddeceptivebusinesspractice. IRisnotresponsibleorliableforsuchaltereddocumentation. Informationof

thirdpartiesmaybesubjecttoadditionalrestrictions.

ResaleofIRproductsorservicedwithstatementsdifferentfromorbeyondtheparametersstatedbyIRforthatproductor

servicevoidsallexpressandanyimpliedwarrantiesfortheassociatedIRproductorserviceandisanunfairanddeceptive

business practice. IR is not responsible or liable for any such statements.

IRproductsarenotdesigned,intended,orauthorizedforuseascomponentsinsystemsintendedforsurgicalimplantinto

thebody,orinotherapplicationsintendedtosupportorsustainlife,orinanyotherapplicationinwhichthefailureoftheIRproduct

couldcreateasituationwherepersonalinjuryordeathmayoccur. ShouldBuyerpurchaseoruseIRproductsforanysuch

unintendedorunauthorizedapplication,BuyershallindemnifyandholdInternationalRectifieranditsofficers,employees,

subsidiaries,affiliates,anddistributorsharmlessagainstallclaims,costs,damages,andexpenses,andreasonableattorney

feesarisingoutof,directlyorindirectly,anyclaimofpersonalinjuryordeathassociatedwithsuchunintendedorunauthorized

use, evenifsuchclaimallegesthatIRwasnegligentregardingthedesignormanufactureoftheproduct.

IRproductsareneitherdesignednorintendedforuseinmilitary/aerospaceapplicationsorenvironmentsunlesstheIRproducts

arespecificallydesignatedbyIRasmilitary-gradeor“enhancedplastic.” OnlyproductsdesignatedbyIRasmilitary-grade

meetmilitaryspecifications. BuyersacknowledgeandagreethatanysuchuseofIRproductswhichIRhasnotdesignated

asmilitary-gradeissolelyattheBuyer’srisk,andthattheyaresolelyresponsibleforcompliancewithalllegalandregulatory

requirementsinconnectionwithsuchuse.

IRproductsareneitherdesignednorintendedforuseinautomotiveapplicationsorenvironmentsunlessthespecificIRproducts

aredesignatedbyIRascompliantwithISO/TS16949requirementsandbearapartnumberincludingthedesignation“AU”.

Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be

responsibleforanyfailuretomeetsuchrequirements

For technical support, please contact IR’s Technical Assistance Center

http://www.irf.com/technical-info/

WORLDHEADQUARTERS:

233KansasSt.,ElSegundo,California90245

Tel:(310)252-7105

www.irf.com

13


型号：	AUIRFR2607ZTR
厂家：	Infineon
描述：	HEXFET® Power MOSFET HEXFET㈢功率MOSFET 晶体晶体管功率场效应晶体管开关脉冲局域网
文件：	总13页 (文件大小：284K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AUIRFR2607ZTR [INFINEON]

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