AUIRFR2905ZSTRL_技术文档

PD - 96320

AUTOMOTIVE GRADE

AUIRFR2905Z

HEXFET^®Power MOSFET

V_(BR)DSS

55V

11.1m

14.5m

59A

Features

D

l

AdvancedProcessTechnology

R_DS(on)typ.

max.

Ω

UltraLowOn-Resistance

175°COperatingTemperature

FastSwitching

G

I_{D (Silicon Limited)}

I_{D (Package Limited)}

D

RepetitiveAvalancheAlloweduptoTjmax

Lead-Free,RoHSCompliant

AutomotiveQualified*

S

42A

Description

SpecificallydesignedforAutomotiveapplications,thisHEXFET^®

Power MOSFET utilizes the latest processing techniques to

achieveextremelylowon-resistancepersiliconarea. Additional

features of this design are a 175°C junction operating

temperature, fast switching speed and improved repetitive

avalancherating.Thesefeaturescombinetomakethisdesign

anextremelyefficientandreliabledeviceforuseinAutomotive

applicationsandawidevarietyofotherapplications.

S

D

G

D-Pak

AUIRFR2905Z

G

D

S

AbsoluteMaximumRatings

Gate

Drain

Source

StressesbeyondthoselistedunderAbsoluteMaximumRatingsmaycausepermanentdamagetothedevice. Theseare

stress ratings only; andfunctionaloperationofthedeviceattheseoranyotherconditionbeyondthoseindicatedinthe

specificationsisnotimplied.Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. Thethermalresistanceandpowerdissipationratingsaremeasuredunderboardmountedandstillairconditions.

Ambient temperature (T_A) is 25°C, unless otherwise specified.

Max.

Parameter

Units

(Silicon Limited)

Continuous Drain Current, V_GS@ 10V

@ T = 25°C

C

59

I

D

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

42

A

@ T = 100°C

C

(Package Limited)

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

42

@ T = 25°C

C

240

DM

110

P

@T = 25°C Power Dissipation

W

W/°C

V

D

C

0.72

Linear Derating Factor

Gate-to-Source Voltage

± 20

V

GS

E_AS

_AS(Tested )

55

Single Pulse Avalanche Energy(Thermally limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

mJ

E

82

I_AR

See Fig.12a, 12b, 15, 16

A

E_AR

Repetitive Avalanche Energy

mJ

-55 to + 175

T

Operating Junction and

J

Storage Temperature Range

°C

STG

300 (1.6mm from case )

10 lbf in (1.1N m)

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

Thermal Resistance

Parameter

Typ.

–––

Max.

1.38

50

Units

R_θJC

R_θJA

Junction-to-Case

Junction-to-Ambient (PCB mount)

°C/W

Junction-to-Ambient

110

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

1

07/20/10

AUIRFR2905Z

Static Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Drain-to-Source Breakdown Voltage

Min. Typ. Max. Units

55 ––– –––

Conditions

V_GS= 0V, I_D= 250µA

V_(BR)DSS

∆V_(BR)DSS/∆T_J

R_DS(on)

V

Breakdown Voltage Temp. Coefficient ––– 0.053 ––– V/°C Reference to 25°C, I_D= 1mA

mΩ

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

–––

2.0

11.1 14.5

V_GS= 10V, I_D= 36A

V_GS(th)

–––

1.3

4.0

–––

20

V

S

Ω

V_DS= V_GS, I_D= 250µA

V_DS= 25V, I_D= 36A

gfs

R_G

Forward Transconductance

Gate Input Resistance

20

–––

f = 1MHz, open drain

V_DS= 55V, V_GS= 0V

I_DSS

Drain-to-Source Leakage Current

–––

µA

nA

250

200

V_DS= 55V, V_GS= 0V, T_J= 125°C

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

V

_GS= 20V

––– -200

V_GS= -20V

Dynamic Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Total Gate Charge

Q_g

Q_gs

Q_gd

t_d(on)

t_r

–––

29

7.7

12

14

66

31

35

44

I_D= 36A

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

–––

V_DS= 44V

V_GS= 10V

V_DD= 28V

I_D= 36A

nC

ns

t_d(off)

t_f

Ω

Turn-Off Delay Time

Fall Time

R_G= 15

V_GS= 10V

L_D

D

S

Internal Drain Inductance

Between lead,

–––

4.5

7.5

–––

6mm (0.25in.)

from package

nH

pF

G

L_S

Internal Source Inductance

and center of die contact

V_GS= 0V

C_iss

Input Capacitance

––– 1380 –––

C_oss

C_rss

C_oss

Output Capacitance

–––

240

120

820

190

300

–––

V_DS= 25V

Reverse Transfer Capacitance

Output Capacitance

ƒ = 1.0MHz

V_GS= 0V, V_DS= 1.0V, ƒ = 1.0MHz

V_GS= 0V, V_DS= 44V, ƒ = 1.0MHz

V_GS= 0V, V_DS= 0V to 44V

Output Capacitance

C_osseff.

Effective Output Capacitance

Diode Characteristics

Parameter

Min. Typ. Max. Units

Conditions

I

Continuous Source Current

MOSFET symbol

S

–––

––– 42

(Body Diode)

Pulsed Source Current

A

showing the

integral reverse

SM

–––

240

(Body Diode)

p-n junction diode.

V

t

Diode Forward Voltage

–––

23

1.3

35

24

V

T = 25°C, I = 36A, V = 0V

SD

J

S

GS

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-On Time

ns T = 25°C, I = 36A, V_DD= 28V

J F

rr

di/dt = 100A/µs

Q

t

16

nC

rr

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

on

2

www.irf.com

AUIRFR2905Z

Qualification Information^†

Automotive

††

(per AEC-Q101)

Comments:

This part number(s) passed

Qualification Level

Automotive qualification. IR’s Industrial and

Consumer qualification level is granted by

extension of the higher Automotive level.

Moisture Sensitivity Level

MSL1

Class M3(400V)

D PAK

Machine Model

(per AEC-Q101-002)

Class H1A(500V)

(per AEC-Q101-001)

Class C5 (1125V)

(per AEC-Q101-005)

Yes

Human Body Model

ESD

Charged Device

Model

RoHS Compliant

Qualification standards can be found at International Rectifiers web site: http//www.irf.com/

Exceptions to AEC-Q101 requirements are noted in the qualification report.

www.irf.com

3

AUIRFR2905Z

1000

100

10

1000

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

TOP

100

10

1

BOTTOM

4.5V

≤

60µs PULSE WIDTH

Tj = 25°C

≤

60µs PULSE WIDTH

Tj = 175°C

1

0.1

0

1

10

100

0.1

1

10

100

V

, Drain-to-Source Voltage (V)

V

, Drain-to-Source Voltage (V)

DS

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000.0

50

T

= 175°C

= 25°C

J

40

30

20

10

0

100.0

10.0

1.0

T

= 175°C

J

T

J

T

= 25°C

V

J

= 25V

DS

V

= 15V

DS

380µs PULSE WIDTH

≤

60µs PULSE WIDTH

4.0

5.0

V

6.0

7.0

8.0

9.0

10.0

0

10

20

30

40

50

, Gate-to-Source Voltage (V)

GS

I

Drain-to-Source Current (A)

D,

Fig 3. Typical Transfer Characteristics

Fig 4. Typical Forward Transconductance

Vs. DrainCurrent

4

www.irf.com

AUIRFR2905Z

2400

2000

1600

1200

800

400

0

20

16

12

8

V

= 0V,

= C

f = 1 MHZ

GS

I = 36A

D

C

+ C , C

SHORTED

iss

gs

gd

ds

V

= 44V

DS

= C

rss

oss

gd

VDS= 28V

VDS= 11V

= C + C

ds

gd

Ciss

4

Coss

Crss

FOR TEST CIRCUIT

SEE FIGURE 13

0

10

Q

20

30

40

50

1

10

, Drain-to-Source Voltage (V)

100

Total Gate Charge (nC)

G

V

DS

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

1000.0

1000

100

10

OPERATION IN THIS AREA

LIMITED BY R

(on)

DS

100.0

10.0

1.0

T

= 175°C

J

100µsec

T

= 25°C

J

1msec

1

10msec

Tc = 25°C

Tj = 175°C

Single Pulse

V

= 0V

GS

0.1

1

10

100

1000

0.2

0.6

1.0

1.4

1.8

2.2

V

, Drain-toSource Voltage (V)

V

, Source-toDrain Voltage (V)

DS

SD

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

www.irf.com

5

AUIRFR2905Z

70

2.0

1.5

1.0

0.5

LIMITED BY PACKAGE

I

= 36A

D

60

50

40

30

20

10

0

V

= 10V

GS

25

50

75

100

125

150

175

-60 -40 -20

T

0

20 40 60 80 100 120 140 160 180

T

, Case Temperature (°C)

C

, Junction Temperature (°C)

J

Fig 10. Normalized On-Resistance

Fig 9. Maximum Drain Current Vs.

Vs. Temperature

Case Temperature

10

1

0.1

D = 0.50

0.20

0.10

R₁

R₂

R₃

Ri (°C/W) τi (sec)

0.3962 0.00012

0.5693 0.00045

0.05

τ

^Jτ_J

τ

^Cτ

0.02

0.01

τ

¹τ₁

τ

²τ₂

³τ₃

0.01

0.4129 0.0015

Ci= τi/Ri

/

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.001

1E-006

1E-005

0.0001

0.001

0.01

0.1

t

, Rectangular Pulse Duration (sec)

1

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

6

www.irf.com

AUIRFR2905Z

240

200

160

120

80

15V

I

D

TOP

36A

8.6A

4.8A

DRIVER

+

L

V

BOTTOM

DS

D.U.T

AS

R

G

V

DD

-

I

A

2

V0_GV_S

Ω

0.01

t

p

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

40

t

p

0

25

50

75

100

125

150

175

Starting T , Junction Temperature (°C)

J

I

AS

Fig 12c. Maximum Avalanche Energy

Fig 12b. Unclamped Inductive Waveforms

Vs. Drain Current

Q

G

10 V

Q

GD

GS

4.5

4.0

3.5

3.0

2.5

2.0

V

G

Charge

I

= 250µA

D

Fig 13a. Basic Gate Charge Waveform

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

.3µF

+

V

DS

D.U.T.

-

V

GS

-75 -50 -25

0

25 50 75 100 125 150 175

, Temperature ( °C )

3mA

T

J

I

D

G

Current Sampling Resistors

Fig 14. Threshold Voltage Vs. Temperature

Fig 13b. Gate Charge Test Circuit

www.irf.com

7

AUIRFR2905Z

1000

Duty Cycle = Single Pulse

100

Allowed avalanche Current vs

avalanche pulsewidth, tav

assuming ∆Tj = 25°C due to

avalanche losses. Note: In no

case should Tj be allowed to

exceed Tjmax

0.01

10

0.05

0.10

1

0.1

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

Fig 15. Typical Avalanche Current Vs.Pulsewidth

Notes on Repetitive Avalanche Curves , Figures 15, 16:

(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T_jmax. This is validated for

every part type.

2. Safe operation in Avalanche is allowed as long asT_jmaxis

not exceeded.

3. Equation below based on circuit and waveforms shown in

Figures 12a, 12b.

4. P_{D (ave)}= Average power dissipation per single

avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. I_av= Allowable avalanche current.

60

50

40

30

20

10

TOP

BOTTOM 1% Duty Cycle

= 36A

Single Pulse

I

D

7. ∆T = Allowable rise in junction temperature, not to exceed

T_jmax(assumed as 25°C in Figure 15, 16).

t_{av =}Average time in avalanche.

0

25

50

75

100

125

150

175

D = Duty cycle in avalanche = t_av·f

Z_thJC(D, t_av) = Transient thermal resistance, see figure 11)

Starting T , Junction Temperature (°C)

J

P_{D (ave)}= 1/2 ( 1.3·BV·I_av) = DT/ Z_thJC

Fig 16. Maximum Avalanche Energy

I_av= 2DT/ [1.3·BV·Z_th]

E_{AS (AR)}= P_{D (ave)}·t_av

Vs. Temperature

8

www.irf.com

AUIRFR2905Z

Driver Gate Drive

P.W.

Period

D =

D.U.T

+

*

=10V

V

GS

CircuitLayoutConsiderations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

-

D.U.T. I Waveform

SD

+

-

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

-

+

D.U.T. V Waveform

DS

Diode Recovery

dv/dt

V

DD

V_DD

Re-Applied

Voltage

• dv/dtcontrolledbyR_G

R_G

+

-

Body Diode

Forward Drop

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

Inductor Curent

I

SD

Ripple

≤ 5%

* V_GS= 5V for Logic Level Devices

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET^®Power MOSFETs

R_D

V_DS

V_GS

D.U.T.

R_G

⁺V_DD

-

10V

PulseWidth ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 18a. Switching Time Test Circuit

V

DS

90%

10%

V

GS

t

r

t

f

d(on)

d(off)

Fig 18b. Switching Time Waveforms

www.irf.com

9

AUIRFR2905Z

D-Pak (TO-252AA) Package Outline

Dimensions are shown in millimeters (inches)

D-Pak (TO-252AA) Part Marking Information

PartNumber

AUFR2905Z

DateCode

Y= Year

WW= Work Week

A= Automotive, Lead Free

IRLogo

YWWA

XX or XX

LotCode

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

10

www.irf.com

AUIRFR2905Z

D-Pak (TO-252AA) Tape & Reel Information

Dimensions are shown in millimeters (inches)

TR

TRL

TRR

16.3 ( .641 )

15.7 ( .619 )

16.3 ( .641 )

15.7 ( .619 )

12.1 ( .476 )

11.9 ( .469 )

8.1 ( .318 )

7.9 ( .312 )

FEED DIRECTION

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

13 INCH

16 mm

NOTES :

1. OUTLINE CONFORMS TO EIA-481.

Notes:

ꢀ Limited by T_Jmax, see Fig.12a, 12b, 15, 16 for typical repetitive

avalanche performance.

Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11).

Limited by T_Jmax, starting T_J= 25°C, L = 0.08mH

This value determined from sample failure population. 100%

tested to this value in production.

R_G= 25Ω, I_AS= 36A, V_GS=10V. Part not

recommended for use above this value.

Pulse width ≤ 1.0ms; duty cycle ≤ 2%.

C_osseff. is a fixed capacitance that gives the

same charging time as C_osswhile V_DSis rising

When mounted on 1" square PCB (FR-4 or G-10 Material) .

application note #AN-994

R_θis measured at T_Japproximately 90°C

Calculated continuous current based on maximum allowable

junction temperature. Package limitation current is 42A

from 0 to 80% V_DSS

.

www.irf.com

11

AUIRFR2905Z

Ordering Information

Base part

Package Type

Standard Pack

Complete Part Number

Form

Quantity

AUIRFR2905Z

DPak

Tube

Tape and Reel

Tape and Reel Left

Tape and Reel Right

75

AUIRFR2905Z

AUIRFR2905ZTR

AUIRF2905ZSTRL

AUIRF2905ZSTRR

2000

3000

12

www.irf.com

AUIRFR2905Z

IMPORTANTNOTICE

Unlessspecificallydesignatedfortheautomotivemarket,InternationalRectifierCorporationanditssubsidiaries(IR)reserve

therighttomakecorrections,modifications,enhancements,improvements,andotherchangestoitsproductsandservices

atanytimeandtodiscontinueanyproductorserviceswithoutnotice. Partnumbersdesignatedwiththe“AU”prefixfollow

automotiveindustryand/orcustomerspecificrequirementswithregardstoproductdiscontinuanceandprocesschange

notification.AllproductsaresoldsubjecttoIR’stermsandconditionsofsalesuppliedatthetimeoforderacknowledgment.

IRwarrantsperformanceofitshardwareproductstothespecificationsapplicableatthetimeofsaleinaccordancewithIR’s

standardwarranty. TestingandotherqualitycontroltechniquesareusedtotheextentIRdeemsnecessarytosupportthis

warranty.Exceptwheremandatedbygovernmentrequirements,testingofallparametersofeachproductisnotnecessarily

performed.

IRassumesnoliabilityforapplicationsassistanceorcustomerproductdesign.Customersareresponsiblefortheirproducts

andapplicationsusingIRcomponents.Tominimizetheriskswithcustomerproductsandapplications,customersshould

provideadequatedesignandoperatingsafeguards.

ReproductionofIRinformationinIRdatabooksordatasheetsispermissibleonlyifreproductioniswithoutalterationandis

accompaniedbyallassociatedwarranties,conditions,limitations,andnotices. Reproductionofthisinformationwithalterations

isanunfairanddeceptivebusinesspractice. IRisnotresponsibleorliableforsuchaltereddocumentation. Informationof

thirdpartiesmaybesubjecttoadditionalrestrictions.

ResaleofIRproductsorservicedwithstatementsdifferentfromorbeyondtheparametersstatedbyIRforthatproductor

servicevoidsallexpressandanyimpliedwarrantiesfortheassociatedIRproductorserviceandisanunfairanddeceptive

business practice. IR is not responsible or liable for any such statements.

IRproductsarenotdesigned,intended,orauthorizedforuseascomponentsinsystemsintendedforsurgicalimplantinto

thebody,orinotherapplicationsintendedtosupportorsustainlife,orinanyotherapplicationinwhichthefailureoftheIRproduct

couldcreateasituationwherepersonalinjuryordeathmayoccur. ShouldBuyerpurchaseoruseIRproductsforanysuch

unintendedorunauthorizedapplication,BuyershallindemnifyandholdInternationalRectifieranditsofficers,employees,

subsidiaries,affiliates,anddistributorsharmlessagainstallclaims,costs,damages,andexpenses,andreasonableattorney

feesarisingoutof,directlyorindirectly,anyclaimofpersonalinjuryordeathassociatedwithsuchunintendedorunauthorized

use, evenifsuchclaimallegesthatIRwasnegligentregardingthedesignormanufactureoftheproduct.

IRproductsareneitherdesignednorintendedforuseinmilitary/aerospaceapplicationsorenvironmentsunlesstheIRproducts

arespecificallydesignatedbyIRasmilitary-gradeor“enhancedplastic.” OnlyproductsdesignatedbyIRasmilitary-grade

meetmilitaryspecifications. BuyersacknowledgeandagreethatanysuchuseofIRproductswhichIRhasnotdesignated

asmilitary-gradeissolelyattheBuyer’srisk,andthattheyaresolelyresponsibleforcompliancewithalllegalandregulatory

requirementsinconnectionwithsuchuse.

IRproductsareneitherdesignednorintendedforuseinautomotiveapplicationsorenvironmentsunlessthespecificIRproducts

aredesignatedbyIRascompliantwithISO/TS16949requirementsandbearapartnumberincludingthedesignation“AU”.

Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be

responsibleforanyfailuretomeetsuchrequirements

For technical support, please contact IR’s Technical Assistance Center

http://www.irf.com/technical-info/

WORLDHEADQUARTERS:

233KansasSt.,ElSegundo,California90245

Tel:(310)252-7105

www.irf.com

13


型号：	AUIRFR2905ZSTRL
厂家：	Infineon
描述：	Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 晶体晶体管功率场效应晶体管开关脉冲局域网
文件：	总13页 (文件大小：287K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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