AUIRF7665S2TR [INFINEON]
DirectFETPower MOSFET; ??的DirectFET功率MOSFET
| 型号： | AUIRF7665S2TR |
| 厂家： | 
Infineon |
| 描述： | DirectFETPower MOSFET |
| 文件： | 总11页 (文件大小：344K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96286
AUIRF7665S2TR
AUIRF7665S2TR1
DirectFET Power MOSFET
AUTOMOTIVE GRADE
• Advanced Process Technology
V(BR)DSS
100V
• Optimized for Class D Audio Amplifier Applications
• Low Rds(on) for Improved Efficiency
• Low Qg for Better THD and Improved Efficiency
• Low Qrr for Better THD and Lower EMI
• Low Parasitic Inductance for Reduced Ringing and Lower EMI
• Delivers up to 100W per Channel into 8Ω with No Heatsink
• Dual Sided Cooling
RDS(on) typ.
51m
62m
Ω
Ω
max.
RG (typical)
Qg (typical)
3.5
Ω
8.3nC
• 175°C Operating Temperature
• Repetitive Avalanche Capability for Robustness and Reliability
• Lead free, RoHS and Halogen free
DirectFET ISOMETRIC
SB
Applicable DirectFET Outline and Substrate Outline
SB
SC
M2
M4
L4
L6
L8
Description
The AUIRF7665S2TR/TR1 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D
audio amplifier performance factors such as efficiency, THD and EMI. Moreover the DirectFET packaging platform offers low parasitic
inductance and resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the
voltage ringing that accompanies current transients.
These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems.
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Max.
100
Units
VDS
VGS
V
Gate-to-Source Voltage
± 20
(Silicon Limited)
(Silicon Limited)
(Silicon Limited)
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
I
I
I
@ TC = 25°C
14.4
10.2
4.1
D
D
D
D
@ TC = 100°C
@ TA = 25°C
@ TC = 25°C
A
Continuous Drain Current, VGS @ 10V (Package Limited)
I
I
77
58
Pulsed Drain Current
DM
Power Dissipation
P
P
EAS
@TC = 25°C
@TA = 25°C
30
D
D
W
Power Dissipation
2.4
37
56
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy (Tested Value)
Avalanche Current
mJ
EAS(tested)
IAR
A
See Fig. 18a,18b,16,17
EAR
T
P
Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
mJ
270
T
J
-55 to + 175
°C
T
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
Max.
Units
°C/W
RθJA
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can
–––
12.5
20
63
RθJA
–––
–––
5.0
RθJA
RθJ-Can
RθJ-PCB
–––
1.4
Junction-to-PCB Mounted
–––
Linear Derating Factor
0.2
W/°C
HEXFET® is a registered trademark of International Rectifier.
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1
01/05/10
AUIRF7665S2TR/TR1
Static @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = 250µA
Parameter
Min.
100
–––
–––
3.0
Typ.
–––
0.10
51
Max.
–––
–––
62
Units
V
V(BR)DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 8.9A
∆
∆
V(BR)DSS/ TJ
V/°C
mΩ
V
RDS(on)
VGS(th)
∆VGS(th)/∆TJ
gfs
4.0
5.0
VDS = VGS, ID = 25µA
Gate Threshold Voltage Coefficient
Forward Transconductance
–––
8.8
-13
–––
–––
5.0
mV/°C
S
V
DS = 25V, ID = 8.9A
–––
3.5
RG(int)
Internal Gate Resistance
–––
–––
–––
–––
–––
Ω
µA
V
DS = 100V, VGS = 0V
IDSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
20
VDS = 80V, VGS = 0V, TJ = 125°C
GS = 20V
250
100
-100
V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Conditions
Parameter
Total Gate Charge
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
8.3
1.9
0.77
3.2
2.4
4.0
4.7
3.8
6.4
7.1
3.6
515
110
30
Max.
13
Units
Qg
Qgs1
VDS = 50V
VGS = 10V
ID = 8.9A
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Qgs2
Qgd
nC
See Fig. 11
Qgodr
Qsw
V
V
DS = 16V, VGS = 0V
DD = 50V
Qoss
td(on)
tr
nC
ns
Turn-On Delay Time
Rise Time
ID = 8.9A
Ω
td(off)
tf
RG = 6.8
Turn-Off Delay Time
Fall Time
VGS = 10V
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Input Capacitance
VDS = 25V
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
ƒ = 1.0MHz
pF
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 80V, ƒ = 1.0MHz
530
70
V
GS = 0V, VDS = 0V to 80V
Coss eff.
115
Diode Characteristics
Conditions
Parameter
Min.
Typ.
Max.
Units
MOSFET symbol
Continuous Source Current
I
I
S
–––
–––
14.4
showing the
(Body Diode)
A
integral reverse
Pulsed Source Current
(Body Diode)
SM
–––
–––
58
p-n junction diode.
T = 25°C, I = 8.9A, V = 0V
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
33
1.3
–––
–––
V
V
t
J
S
GS
SD
T = 25°C, I = 8.9A, VDD = 25V
ns
nC
J
F
rr
di/dt = 100A/µs
38
Q
rr
Mounted on minimum footprint full size
board with metalized back and with small
clip heatsink (still air)
Mounted to a PCB with small
clip heatsink (still air)
Surface mounted on 1 in. square Cu
(still air).
Notes through are on page 11
2
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AUIRF7665S2TR/TR1
Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
Moisture Sensitivity Level
DFET2
MSL1
Machine Model
Class B
AEC-Q101-002
Class 2
Human Body Model
ESD
AEC-Q101-001
Class IV
Charged Device Model
AEC-Q101-005
Yes
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http://www.irf.com
Exceptions to AEC-Q101 requirements are noted in the qualification report.
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3
AUIRF7665S2TR/TR1
100
100
10
1
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
VGS
15V
TOP
TOP
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
10
1
BOTTOM
BOTTOM
0.1
5.0V
60µs
0.01
0.001
5.0V
60µs
PULSE WIDTH
Tj = 175°C
≤
PULSE WIDTH
Tj = 25°C
≤
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
140
320
280
240
200
160
120
80
Vgs = 10V
I
= 8.9A
D
120
100
80
T
= 125°C
J
T
= 125°C
J
60
T
= 25°C
T
= 25°C
J
J
40
40
6
7
8
9
10 11 12 13 14 15
0
10
20
30
40
I , Drain Current (A)
V
Gate -to -Source Voltage (V)
Fig 4. TypicalDOn-Resistance vs. Drain Current
GS,
Fig 3. Typical On-Resistance vs. Gate Voltage
100
2.5
I
= 8.9A
D
V
= 10V
GS
10
2.0
1.5
1.0
0.5
1
0.1
T
= -40°C
J
TJ = 25°C
TJ = 175°C
V
= 25V
DS
≤
60µs PULSE WIDTH
0.01
2
4
6
8
10 12 14 16
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
T
J
V
, Gate-to-Source Voltage (V)
GS
Fig 6. Normalized On-Resistance vs. Temperature
Fig 5. Typical Transfer Characteristics
4
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AUIRF7665S2TR/TR1
100
10
T
= -40°C
J
6.5
5.5
4.5
3.5
2.5
1.5
TJ = 25°C
TJ = 175°C
1
I
= 25µA
D
0.1
0.01
ID = 250µA
ID = 1.0mA
D = 1.0A
V
= 0V
GS
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
, Source-to-Drain Voltage (V)
-75 -50 -25
0
25 50 75 100 125 150 175
V
T
, Temperature ( °C )
SD
J
Fig 7. Typical Threshold Voltage vs. Junction Temperature
Fig 8. Typical Source-Drain Diode Forward Voltage
20
18
10000
V
= 0V,
= C
f = 1 MHZ
GS
C
C
C
+ C , C
SHORTED
ds
T
= 25°C
iss
gs
gd
J
= C
rss
oss
gd
= C + C
16
14
12
10
8
ds
gd
1000
100
10
C
iss
T
= 175°C
J
C
oss
6
4
C
V
= 10V
rss
DS
2
380µs PULSE WIDTH
0
0
2
4
6
8 10 12 14 16 18
1
10
, Drain-to-Source Voltage (V)
100
I ,Drain-to-Source Current (A)
V
D
DS
Fig 10. Typical Capacitance vs.Drain-to-Source Voltage
Fig 9. Typical Forward Transconductance Vs. Drain Current
14.0
16
I
= 8.9A
D
14
12
10
8
12.0
10.0
8.0
V
= 80V
= 50V
DS
DS
V
VDS= 20V
6.0
6
4.0
4
2.0
2
0.0
0
0
2
4
6
8
10
12
25
50
75
100
125
150
175
Q , Total Gate Charge (nC)
T
, Case Temperature (°C)
G
C
Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage
Fig 12. Maximum Drain Current vs. Case Temperature
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5
AUIRF7665S2TR/TR1
1000
160
140
120
100
80
OPERATION IN THIS AREA
I
D
LIMITED BY R
(on)
DS
TOP
1.64A
3.04A
100
10
BOTTOM 8.90A
100µsec
1msec
10msec
1
60
40
DC
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.01
20
0
0
1
10
100
1000
25
50
75
100
125
150
175
V
, Drain-to-Source Voltage (V)
Starting T , Junction Temperature (°C)
DS
Fig 13. Maximum Safe Operating Area
Fig 14. MaximumJAvalanche Energy vs. Temperature
10
D = 0.50
1
0.1
0.20
0.10
0.05
0.02
0.01
Ri (°C/W) τi (sec)
R1
R1
R2
R2
R3
R3
R4
R4
0.49687 0.000119
0.00517 8.231486
2.55852 0.018926
1.94004 0.002741
τ
τ
J τJ
τ
C
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
0.01
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
∆
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
0.01
0.05
0.10
1
0.1
Allowed avalanche Current vs avalanche
∆Τ
pulsewidth, tav, assuming
Tstart = 150°C.
j = 25°C and
0.01
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 16. Typical Avalanche Current Vs.Pulsewidth
6
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AUIRF7665S2TR/TR1
Notes on Repetitive Avalanche Curves , Figures 16, 17:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 18a, 18b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
40
35
30
25
20
15
10
5
TOP
BOTTOM 1.0% Duty Cycle
= 8.9A
Single Pulse
I
D
Tjmax (assumed as 25°C in Figure 16, 17).
t
av = Average time in avalanche.
0
D = Duty cycle in avalanche = tav ·f
25
50
75
100
125
150
175
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 17. Maximum Avalanche Energy Vs. Temperature
V
15V
(BR)DSS
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
VGS
20V
0.01
t
Ω
p
I
AS
Fig 18a. Unclamped Inductive Test Circuit
Fig 18b. Unclamped Inductive Waveforms
Id
Vds
L
Vgs
VCC
DUT
0
20K
Vgs(th)
Fig 19a. Gate Charge Test Circuit
Qgs1
Qgs2
Qgodr
Qgd
RD
VDS
Fig 19b. Gate Charge Waveform
VGS
D.U.T.
V
DS
RG
+
-
90%
VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 20a. Switching Time Test Circuit
Fig 20b. Switching Time Waveforms
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7
AUIRF7665S2TR/TR1
Automotive DirectFET Board Footprint, SB (Small Size Can).
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
CL
G = GATE
D = DRAIN
S = SOURCE
D
D
D
D
G
S
8
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AUIRF7665S2TR/TR1
Automotive DirectFET Outline Dimension, SB Outline (Small Size Can).
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
Automotive DirectFET Part Marking
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9
AUIRF7665S2TR/TR1
Automotive DirectFET Tape & Reel Dimension (Showing component orientation).
10
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AUIRF7665S2TR/TR1
Notes:
Starting TJ = 25°C, L = 0.944mH, RG = 25Ω, IAS = 8.9A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
ꢀ Repetitive rating; pulse width limited by max. junction temperature.
R is measured at TJ of approximately 90°C.
θ
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the
right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time
and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry
and / or customer specific requirements with regards to product discontinuance and process change notification. All products are
sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard
warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except
where mandated by government requirements, testing of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and
applications using IR components. To minimize the risks with customer products and applications, customers should provide ad-
equate design and operating safeguards.
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or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could
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IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are
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acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any
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WORLD HEADQUARTERS:
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Tel: (310) 252-7105
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11
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INFINEON
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