AUIRF3805S-7PTRL [INFINEON]
HEXFET® Power MOSFET; HEXFET㈢功率MOSFET
| 型号： | AUIRF3805S-7PTRL |
| 厂家： | 
Infineon |
| 描述： | HEXFET® Power MOSFET |
| 文件： | 总14页 (文件大小：303K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AUTOMOTIVE GRADE
PD - 96318
AUIRF3805S-7P
AUIRF3805L-7P
HEXFET® Power MOSFET
Features
l
l
l
l
l
l
l
Advanced Process Technology
D
V(BR)DSS
55V
2.0m
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
RDS(on) typ.
Ω
G
max.
2.6m
Ω
S
S (Pin 2, 3, 5, 6, 7)
G (Pin 1)
ID
240A
Description
D
D
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance
per silicon area. Additional features of this design are
a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating.
These features combine to make this design an
extremely efficient and reliable device for use in
Automotive applications and a wide variety of other
applications.
S
S
S
S
S
S
S
S
S
S
G
G
D2Pak 7 Pin
TO-263CA 7 Pin
AUIRF3805L-7P
AUIRF3805S-7P
G
D
S
Gate
Drain
Source
AbsoluteMaximumRatings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the
device. These are stress ratings only; and functional operation of the device at these or any other condition
beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions
for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise
specified.
Parameter
Max.
Units
I
I
I
I
@ TC = 25°C
@ TC = 100°C
@ TC = 25°C
240
D
D
D
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
170
160
1000
300
A
DM
P
@TC = 25°C
W
D
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
2.0
W/°C
V
V
EAS
EAS (tested)
IAR
± 20
GS
440
680
mJ
See Fig.12a,12b,15,16
A
mJ
EAR
Repetitive Avalanche Energy
dv/dt
J
2.3
V/ns
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
T
-55 to + 175
T
STG
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Thermal ResMisotuanntincgetorque, 6-32 or M3 screw
10 lbf•in (1.1N•m)
Parameter
Typ.
–––
0.50
–––
Max.
0.50
–––
62
Units
RθJC
RθCS
RθJA
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
–––
40
Junction-to-Ambient (PCB Mount, steady state)
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
07/20/10
AUIRF3805S/L-7P
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
∆Β
55
–––
–––
V
∆
DSS/ TJ
V
Breakdown Voltage Temp. Coefficient –––
0.05
––– V/°C Reference to 25°C, ID = 1mA
RDS(on) SMD
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.0
VGS = 10V, ID = 140A
2.0
–––
–––
–––
–––
–––
2.6
4.0
–––
20
mΩ
V
VDS = VGS, ID = 250µA
VDS = 25V, ID = 140A
VDS = 55V, VGS = 0V
gfs
IDSS
110
–––
–––
–––
–––
S
Forward Transconductance
Drain-to-Source Leakage Current
µA
250
200
V
V
V
DS = 55V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
GS = 20V
nA
––– -200
GS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Total Gate Charge
Qg
Qgs
Qgd
td(on)
tr
–––
–––
–––
–––
–––
–––
–––
130
53
200
–––
–––
–––
–––
–––
–––
ID = 140A
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
V
DS = 44V
GS = 10V
nC
49
V
23
VDD = 28V
D = 140A
G = 2.4Ω
GS = 10V
130
80
I
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
R
52
V
LD
D
S
Internal Drain Inductance
Between lead,
–––
–––
4.5
7.5
–––
–––
6mm (0.25in.)
from package
nH
pF
G
LS
Internal Source Inductance
and center of die contact
Ciss
Input Capacitance
––– 7820 –––
––– 1260 –––
VGS = 0V
Coss
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
VDS = 25V
Crss
–––
––– 4310 –––
––– 980 –––
––– 1540 –––
610
–––
ƒ = 1.0MHz, See Fig. 5
GS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
V
Coss
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Coss eff.
Effective Output Capacitance
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
IS
Continuous Source Current
–––
–––
240
(Body Diode)
Pulsed Source Current
showing the
integral reverse
A
G
ISM
–––
–––
––– 1000
S
(Body Diode)
p-n junction diode.
VSD
T = 25°C, I = 140A, V = 0V
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
1.3
V
J
S
GS
trr
Qrr
T = 25°C, I = 140A, VDD = 28V
–––
–––
45
35
68
53
ns
nC
J
F
di/dt = 100A/µs
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
This value determined from sample failure
population starting TJ = 25°C, L=0.043mH,
RG = 25Ω, IAS = 140A,VGS =10V.
ꢀ This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
R is measured at TJ of approximately 90°C.
θ
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Solder mounted on IMS substrate.
Coss eff. is a fixed capacitance that gives the same
Limited by TJmax starting TJ = 25°C, L=0.043mH,
RG = 25Ω, IAS = 140A,VGS =10V.Part not recommended for
use above this value.
charging time as Coss while VDS is rising from 0 to
80% VDSS
.
2
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AUIRF3805S/L-7P
Qualification Information†
Automotive
††
(per AEC-Q101)
Comments:
This
part
number(s)
passed
Qualification Level
Automotive qualification. IR’s Industrial and
Consumer qualification level is granted by
extension of the higher Automotive level.
Moisture Sensitivity Level
MSL1 , 260°C
Class M4(+/-425V)
7L-D2 PAK
Machine Model
(per AEC-Q101-002)
Class H3A(+/-4000V)
(per AEC-Q101-001)
Class C5 (+/-1000V)
(per AEC-Q101-005)
Yes
ESD
Human Body Model
Charged Device Model
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
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3
AUIRF3805S/L-7P
10000
1000
100
10000
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
10
4.5V
1
4.5V
60µs PULSE WIDTH
Tj = 175°C
≤
60µs PULSE WIDTH
Tj = 25°C
≤
0.1
1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
250
T
= 25°C
J
200
150
100
50
T
= 175°C
J
T
= 175°C
J
T = 25°C
J
V
= 10V
DS
V
= 25V
DS
380µs PULSE WIDTH
≤
60µs PULSE WIDTH
1.0
0
2
4
6
8
10
0
20
40
60
80
100
120
I ,Drain-to-Source Current (A)
D
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
vs. Drain Current
4
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AUIRF3805S/L-7P
100000
10000
1000
12.0
10.0
8.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 140A
D
V
V
= 64V
= 40V
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
DS
DS
= C
rss
oss
gd
= C + C
ds
gd
C
iss
6.0
C
oss
C
4.0
rss
2.0
100
0.0
1
10
, Drain-to-Source Voltage (V)
100
0
50
100
150
V
Q
Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
10000
1000
100
10
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100µsec
1msec
T
= 175°C
J
10msec
T
= 25°C
J
DC
1
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
0.1
1
10
, Drain-to-Source Voltage (V)
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
, Source-to-Drain Voltage (V)
V
V
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
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5
AUIRF3805S/L-7P
250
200
150
100
50
2.5
2.0
1.5
1.0
0.5
I
= 140A
= 10V
D
V
GS
0
25
50
75
100
125
150
175
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
T
, Case Temperature (°C)
C
T
J
Fig 10. Normalized On-Resistance
Fig 9. Maximum Drain Current vs.
vs.Temperature
CaseTemperature
1
D = 0.50
0.20
0.1
0.01
0.10
0.05
R1
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
τ
J τJ
τ
Cτ
0.0794
0.1474
0.2737
0.000192
0.000628
0.014012
0.02
0.01
τ
τ
1τ1
τ
2τ2
3τ3
Ci= τi/Ri
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRF3805S/L-7P
15V
2000
1500
1000
500
0
I
D
DRIVER
+
L
V
DS
TOP
21A
37A
BOTTOM 140A
D.U.T
AS
R
G
V
DD
-
I
A
V
20V
GS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
vs. Drain Current
Q
G
10 V
Q
Q
GD
GS
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
V
G
Charge
Fig 13a. Basic Gate Charge Waveform
I
I
I
= 250µA
= 1.0mA
= 1.0A
D
D
D
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
V
GS
-75 -50 -25
0
25 50 75 100 125 150 175 200
, Temperature ( °C )
3mA
T
J
I
I
D
G
Current Sampling Resistors
Fig 14. Threshold Voltage vs. Temperature
Fig 13b. Gate Charge Test Circuit
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7
AUIRF3805S/L-7P
1000
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
∆
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
100
0.01
0.05
0.10
10
Allowed avalanche Current vs avalanche
∆Τ
pulsewidth, tav, assuming
Tstart = 150°C.
j = 25°C and
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
500
400
300
200
100
TOP
BOTTOM 1% Duty Cycle
= 140A
Single Pulse
I
D
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
0
D = Duty cycle in avalanche = tav ·f
25
50
75
100
125
150
175
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
vs.Temperature
8
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AUIRF3805S/L-7P
Driver Gate Drive
P.W.
Period
Period
D =
D.U.T
P.W.
+
*
=10V
V
GS
CircuitLayoutConsiderations
• LowStrayInductance
• Ground Plane
• LowLeakageInductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
PulseWidth ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
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9
AUIRF3805S/L-7P
D2Pak - 7 Pin Package Outline
Dimensions are shown in millimeters (inches)
D2Pak - 7 Pin Part Marking Information
PartNumber
AUIRF3805S-7
DateCode
Y= Year
WW= Work Week
A= Automotive, Lead Free
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRF3805S/L-7P
TO-263CA 7 Pin Long Leads Package Outline
Dimensions are shown in millimeters (inches)
TO-263CA - 7 Pin Part Marking Information
PartNumber
AUIRF3805L-7
DateCode
Y= Year
WW= Work Week
A= Automotive, Lead Free
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
11
AUIRF3805S/L-7P
D2Pak - 7 Pin Tape and Reel
12
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AUIRF3805S/L-7P
Ordering Information
Base part
Package Type
Standard Pack
Form
Complete Part Number
Quantity
50
AUIRF3805L-7P
AUIRF3805S-7P
TO-262
D2Pak
Tube
Tube
AUIRF3805L-7P
AUIRF3805S-7P
50
Tape and Reel Left
Tape and Reel Right
800
800
AUIRF3805S-7PTRL
AUIRF3805S-7PTRR
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13
AUIRF3805S/L-7P
IMPORTANTNOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries
(IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its
products and services at any time and to discontinue any product or services without notice. Part numbers
designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards
to product discontinuance and process change notification. All products are sold subject to IR’s terms and
conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance
withIR’sstandardwarranty. TestingandotherqualitycontroltechniquesareusedtotheextentIRdeemsnecessary
to support this warranty. Except where mandated by government requirements, testing of all parameters of each
product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their
products and applications using IR components. To minimize the risks with customer products and applications,
customers should provide adequate design and operating safeguards.
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For technical support, please contact IR’s Technical Assistance Center
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Tel: (310) 252-7105
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